Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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AON6508_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | 8-PowerSMD, Flat Leads | 30V | 4.2W Ta 41W Tc | N-Channel | 2010pF @ 15V | 3.2m Ω @ 20A, 10V | 2.2V @ 250μA | 29A Ta 32A Tc | 49nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUXS20956S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4304_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DMTH10H030LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth10h030lk313-datasheets-2462.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 27 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 28A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 2.1W Ta | 50A | 0.045Ohm | 85 mJ | N-Channel | 1871pF @ 50V | 30m Ω @ 20A, 10V | 3.5V @ 250μA | 28A Tc | 33.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFC4668D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
64-0055PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 60V | 230W Tc | N-Channel | 4520pF @ 50V | 4.2mOhm @ 75A, 10V | 4V @ 150μA | 160A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
APT80SM120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 22 Weeks | SOT-227 | 51A | 1200V | 273W Tc | N-Channel | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 51A Tc | 235nC @ 20V | 55 mΩ | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R330P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r330p6atma1-datasheets-2415.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 12A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 93W Tc | TO-236AB | 33A | 0.33Ohm | 247 mJ | N-Channel | 1010pF @ 100V | 330m Ω @ 4.5A, 10V | 4.5V @ 370μA | 12A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
AON7518 | Alpha & Omega Semiconductor Inc. | $2.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | 8-PowerVDFN | 8-DFN (3x3) | 1.086nF | 24A | 30V | 3.1W Ta 23W Tc | N-Channel | 1086pF @ 15V | 8.8mOhm @ 20A, 10V | 2.5V @ 250μA | 24A Tc | 22nC @ 10V | 8.8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
BUK929R1-60EJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2017 | DPAK | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3202PD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3202ps-datasheets-2317.pdf | TO-220-3 | 10 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 65W Tc | N-Channel | 760pF @ 480V | 350m Ω @ 5.5A, 8V | 2.5V @ 250μA | 9A Tc | 9.3nC @ 4.5V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3208LS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3208ldg-datasheets-1325.pdf | 3-PowerDFN | 10 Weeks | yes | unknown | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOY516 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoy516-datasheets-2377.pdf | TO-251-3 Short Leads, IPak, TO-251AA | FET General Purpose Power | 46A | Single | 30V | 2.5W Ta 50W Tc | N-Channel | 1333pF @ 15V | 5m Ω @ 20A, 10V | 2.6V @ 250μA | 46A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC4468ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC4127ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI80N06S4L05AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 80A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W Tc | 320A | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 8.5m Ω @ 40A, 4.5V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
AOB20C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aob20c60-datasheets-2384.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | YES | FET General Purpose Power | Single | 600V | 463W Tc | 20A | N-Channel | 3440pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SIS478DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sis478dnt1ge3-datasheets-2435.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 12A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 15.6W Tc | 40A | 0.02Ohm | 5 mJ | N-Channel | 398pF @ 15V | 20m Ω @ 8A, 10V | 2.5V @ 250μA | 12A Tc | 10.5nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||
IPP80P04P405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p405aksa1-datasheets-1744.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 42 ns | 24ns | 65 ns | 73 ns | 80A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 125W Tc | TO-220AB | 0.0052Ohm | 64 mJ | P-Channel | 10300pF @ 25V | 5.2m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 151nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRLC8259ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH3202LS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3202ls-datasheets-2389.pdf | 3-PowerDFN | 10 Weeks | yes | unknown | 600V | 65W Tc | N-Channel | 760pF @ 480V | 350m Ω @ 5.5A, 8V | 2.5V @ 250μA | 9A Tc | 9.3nC @ 4.5V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC3006EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC4227EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOD518_051 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC4020D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFC3004EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AOI452A | Alpha & Omega Semiconductor Inc. | $5.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoi452a-datasheets-2409.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | SINGLE | 3 | 1 | Not Qualified | R-PSIP-T3 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.2W Ta 50W Tc | 120A | 0.014Ohm | N-Channel | 1450pF @ 12.5V | 7.3m Ω @ 20A, 10V | 2.5V @ 250μA | 55A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
APT25SM120S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2009 | D-3 Module | 22 Weeks | EAR99 | YES | FET General Purpose Power | 25A | Single | 1200V | 175W Tc | N-Channel | 175m Ω @ 10A, 20V | 2.5V @ 1mA | 25A Tc | 72nC @ 20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD60R380E6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~155°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r380e6xksa1-datasheets-7737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 1 | R-PSSO-G2 | 11 ns | 9ns | 8 ns | 56 ns | 10.6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 83W Tc | 210 mJ | 650V | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 300μA | 10.6A Tc | 32nC @ 10V | Super Junction | 10V | ±20V | ||||||||||||||||||||||||||||||||||
APT70SM70S | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt70sm70b-datasheets-2236.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 22 Weeks | EAR99 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 65A | Single | DRAIN | SWITCHING | 700V | 700V | 220W Tc | 50A | 117A | 0.09Ohm | N-Channel | 70m Ω @ 32.5A, 20V | 2.5V @ 1mA | 65A Tc | 125nC @ 20V | 20V | +25V, -10V |
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