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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NVMFS6B05NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6b05nlt1g-datasheets-2224.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 3.8W Ta 165W Tc | 114A | 330A | 125 mJ | N-Channel | 3980pF @ 25V | 5.6m Ω @ 20A, 10V | 3V @ 250μA | 6.8nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| AON2701_001 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | 6-WDFN Exposed Pad | 20V | 1.5W Ta | P-Channel | 700pF @ 10V | 120m Ω @ 3A, 4.5V | 1V @ 250μA | 3A Ta | 6.5nC @ 4.5V | Schottky Diode (Body) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4404BL_101 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | 8-SOIC (0.154, 3.90mm Width) | 30V | 3.1W Ta | N-Channel | 630pF @ 15V | 24m Ω @ 8.5A, 10V | 1.45V @ 250μA | 8.5A Ta | 7nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLC8743EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC3107EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7518 | Alpha & Omega Semiconductor Inc. | $2.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | 8-PowerVDFN | 8-DFN (3x3) | 1.086nF | 24A | 30V | 3.1W Ta 23W Tc | N-Channel | 1086pF @ 15V | 8.8mOhm @ 20A, 10V | 2.5V @ 250μA | 24A Tc | 22nC @ 10V | 8.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK929R1-60EJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2017 | DPAK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3202PD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3202ps-datasheets-2317.pdf | TO-220-3 | 10 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 65W Tc | N-Channel | 760pF @ 480V | 350m Ω @ 5.5A, 8V | 2.5V @ 250μA | 9A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3208LS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3208ldg-datasheets-1325.pdf | 3-PowerDFN | 10 Weeks | yes | unknown | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOY516 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoy516-datasheets-2377.pdf | TO-251-3 Short Leads, IPak, TO-251AA | FET General Purpose Power | 46A | Single | 30V | 2.5W Ta 50W Tc | N-Channel | 1333pF @ 15V | 5m Ω @ 20A, 10V | 2.6V @ 250μA | 46A Tc | 33nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4468ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4127ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI80N06S4L05AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb80n06s4l05atma2-datasheets-0347.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 80A | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 107W Tc | 320A | 0.0048Ohm | 152 mJ | N-Channel | 8180pF @ 25V | 8.5m Ω @ 40A, 4.5V | 2.2V @ 60μA | 80A Tc | 110nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| AOB20C60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aob20c60-datasheets-2384.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | compliant | YES | FET General Purpose Power | Single | 600V | 463W Tc | 20A | N-Channel | 3440pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 74nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS478DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sis478dnt1ge3-datasheets-2435.pdf | PowerPAK® 1212-8 | 5 | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | FET General Purpose Power | S-PDSO-C5 | 12A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.2V | 15.6W Tc | 40A | 0.02Ohm | 5 mJ | N-Channel | 398pF @ 15V | 20m Ω @ 8A, 10V | 2.5V @ 250μA | 12A Tc | 10.5nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||
| IPP80P04P405AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi80p04p405aksa1-datasheets-1744.pdf | TO-220-3 | Contains Lead | 3 | 3 | EAR99 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 42 ns | 24ns | 65 ns | 73 ns | 80A | 20V | -40V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 125W Tc | TO-220AB | 0.0052Ohm | 64 mJ | P-Channel | 10300pF @ 25V | 5.2m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 151nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRLC8259ED | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3202LS | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 3 (168 Hours) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/transphorm-tph3202ls-datasheets-2389.pdf | 3-PowerDFN | 10 Weeks | yes | unknown | 600V | 65W Tc | N-Channel | 760pF @ 480V | 350m Ω @ 5.5A, 8V | 2.5V @ 250μA | 9A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC3006EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4227EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD518_051 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2016 | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC4020D | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFC3004EB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI452A | Alpha & Omega Semiconductor Inc. | $5.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aoi452a-datasheets-2409.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | SINGLE | 3 | 1 | Not Qualified | R-PSIP-T3 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 3.2W Ta 50W Tc | 120A | 0.014Ohm | N-Channel | 1450pF @ 12.5V | 7.3m Ω @ 20A, 10V | 2.5V @ 250μA | 55A Tc | 26nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 64-0055PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | 60V | 230W Tc | N-Channel | 4520pF @ 50V | 4.2mOhm @ 75A, 10V | 4V @ 150μA | 160A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT80SM120J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | 175°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 1997 | SOT-227-4, miniBLOC | 22 Weeks | SOT-227 | 51A | 1200V | 273W Tc | N-Channel | 55mOhm @ 40A, 20V | 2.5V @ 1mA | 51A Tc | 235nC @ 20V | 55 mΩ | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R330P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r330p6atma1-datasheets-2415.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 12A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 93W Tc | TO-236AB | 33A | 0.33Ohm | 247 mJ | N-Channel | 1010pF @ 100V | 330m Ω @ 4.5A, 10V | 4.5V @ 370μA | 12A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| JANTX2N6898 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | TO-204AA, TO-3 | 2 | EAR99 | No | e0 | Tin/Lead (Sn/Pb) | BOTTOM | PIN/PEG | 2 | 1 | Other Transistors | Qualified | O-MBFM-P2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 150W Tc | TO-204AE | 25A | 60A | P-Channel | 3000pF @ 25V | 200m Ω @ 15.8A, 10V | 4V @ 250μA | 25A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 62-0095PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | SOIC | 20V | 2W | N-Channel | 900pF @ 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250μA | 10A Ta 12A Tc | 11nC @ 4.5V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU80R1K4CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd80r1k4cebtma1-datasheets-7317.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 6 Weeks | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 3.9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 63W Tc | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 3.9A Tc | 23nC @ 10V | 10V | ±20V |
