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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4156DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4156dyt1ge3-datasheets-0949.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 6mOhm | 8 | yes | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | Not Qualified | 25 ns | 20ns | 15 ns | 25 ns | 24A | 20V | SILICON | SWITCHING | 2.2V | 2.5W Ta 6W Tc | 30V | N-Channel | 1700pF @ 15V | 6m Ω @ 15.7A, 10V | 2.2V @ 250μA | 24A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BS270 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-bs270d74z-datasheets-9062.pdf&product=onsemiconductor-bs270-6827829 | 60V | 400mA | TO-226-3, TO-92-3 (TO-226AA) | 4.7mm | 4.7mm | 3.93mm | Lead Free | 3 | 11 Weeks | 200mg | No SVHC | 2MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Copper, Silver, Tin | No | e3 | Tin (Sn) | BOTTOM | BS270 | Single | 630mW | 1 | FET General Purpose Power | 400mA | 20V | SILICON | SWITCHING | 2.1V | 625mW Ta | 0.4A | 5 pF | 60V | N-Channel | 50pF @ 25V | 2.1 V | 2 Ω @ 500mA, 10V | 2.5V @ 250μA | 400mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4825DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4825ddyt1ge3-datasheets-0870.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | No SVHC | 12.5MOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.7W | 1 | 48 ns | 92ns | 19 ns | 34 ns | 10.9A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -1.4V | 2.7W Ta 5W Tc | -30V | P-Channel | 2550pF @ 15V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 14.9A Tc | 86nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| STN3NF06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stn3nf06-datasheets-0889.pdf | 60V | 4A | TO-261-4, TO-261AA | 19.05mm | 6.35mm | 12.7mm | Lead Free | 4 | 12 Weeks | 4.535924g | No SVHC | 100mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | STN3N | 4 | Single | 30 | 3.3W | 1 | FET General Purpose Power | 7 ns | 18ns | 6 ns | 17 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.3W Tc | 4A | 16V | N-Channel | 315pF @ 25V | 100m Ω @ 1.5A, 10V | 4V @ 250μA | 4A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AON6262E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 60V | 48W Tc | N-Channel | 1650pF @ 30V | 6.2m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9Y8R7-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y8r760e115-datasheets-1060.pdf | SC-100, SOT-669 | Brass, Bronze | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | Single | 147W | 1 | 17 ns | 30ns | 26 ns | 42 ns | 86A | 10V | 60V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 147W Tc | MO-235 | Gold, Tin | 0.0087Ohm | 76.5 mJ | N-Channel | 4570pF @ 25V | 7.5m Ω @ 20A, 10V | 2.1V @ 1mA | 86A Tc | 31nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR7546TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfr7546trpbf-datasheets-1026.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 3.949996g | No SVHC | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 8.1 ns | 28ns | 20 ns | 36 ns | 56A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.7V | 99W Tc | TO-252AA | 280A | 0.0079Ohm | N-Channel | 3020pF @ 25V | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 56A Tc | 87nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| CSD18514Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | 260 | CSD18514 | Single | NOT SPECIFIED | 1 | SILICON | DRAIN | SWITCHING | 40V | 40V | 74W Tc | 237A | 0.0079Ohm | 55 mJ | N-Channel | 7.9m Ω @ 15A, 10V | 2.4V @ 250μA | 89A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR4105TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irfr4105trpbf-datasheets-1009.pdf | 55V | 25A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 2.38mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 45mOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 49ns | 40 ns | 31 ns | 27A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 68W Tc | TO-252AA | 86 ns | 20A | 65 mJ | 55V | N-Channel | 700pF @ 25V | 4 V | 45m Ω @ 16A, 10V | 4V @ 250μA | 27A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| TN5325K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/microchiptechnology-tn5325k1g-datasheets-0773.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | Lead Free | 3 | 18 Weeks | 1.437803g | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | Not Qualified | 20 ns | 15ns | 15 ns | 25 ns | 150mA | 20V | SILICON | SWITCHING | 360mW Ta | 7Ohm | 250V | N-Channel | 110pF @ 25V | 7 Ω @ 1A, 10V | 2V @ 1mA | 150mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR310TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfr310trpbf-datasheets-0789.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 170pF | 7.9 ns | 9.9ns | 11 ns | 21 ns | 1.7A | 20V | 400V | 4V | 2.5W Ta 25W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1A, 10V | 4V @ 250μA | 1.7A Tc | 12nC @ 10V | 3.6 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA910PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdma910pz-datasheets-0793.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 260 | Single | 30 | 2.4W | 1 | Other Transistors | 9.4 ns | 19ns | 103 ns | 135 ns | 9.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | -500mV | 2.4W Ta | 0.02Ohm | 580 pF | -20V | P-Channel | 2805pF @ 10V | 20m Ω @ 9.4A, 4.5V | 1.5V @ 250μA | 9.4A Ta | 29nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SQSA80ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqsa80enwt1ge3-datasheets-0819.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 14 Weeks | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 62.5W | 1 | 175°C | S-PDSO-F5 | 9 ns | 19 ns | 18A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 72A | 0.027Ohm | 24.2 mJ | 80V | N-Channel | 1358pF @ 40V | 21m Ω @ 10A, 10V | 2.5V @ 250μA | 18A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS86252 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fds86252-datasheets-0571.pdf | 8-SOIC (0.154, 3.90mm Width) | 4mm | 1.5mm | 5mm | 8 | 9 Weeks | 130mg | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 5W | 1 | FET General Purpose Power | 9.2 ns | 1.6ns | 2.9 ns | 14 ns | 4.5A | 20V | SILICON | SWITCHING | 3.4V | 2.5W Ta 5W Tc | 0.055Ohm | 5 pF | 150V | N-Channel | 955pF @ 75V | 3.4 V | 55m Ω @ 4.5A, 10V | 4V @ 250μA | 4.5A Ta | 15nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4935NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4935nt1g-datasheets-0653.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 5 | Single | 2.63W | 1 | FET General Purpose Power | 16.3 ns | 20ns | 6.6 ns | 27.5 ns | 93A | 20V | SILICON | DRAIN | SWITCHING | 1.63V | 930mW Ta 48W Tc | 0.0042Ohm | 30V | N-Channel | 4850pF @ 15V | 1.63 V | 3.2m Ω @ 30A, 10V | 2.2V @ 250μA | 13A Ta 93A Tc | 49.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR3910TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | 100V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 115mOhm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | Single | 30 | 52W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.4 ns | 27ns | 25 ns | 37 ns | 16A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 79W Tc | TO-252AA | 190 ns | 60A | 100V | N-Channel | 640pF @ 25V | 4 V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFR3910TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irfr3910trpbf-datasheets-0641.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 79W Tc | TO-252AA | 16A | 60A | 0.115Ohm | 150 mJ | N-Channel | 640pF @ 25V | 115m Ω @ 10A, 10V | 4V @ 250μA | 16A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A17KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/diodesincorporated-zxmp6a17ktc-datasheets-9445.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 125mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 40 | 9.25W | 1 | Other Transistors | R-PSSO-G2 | 2.6 ns | 3.4ns | 11.3 ns | 26.2 ns | 6.6A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.11W Ta | TO-252AA | 4.4A | -60V | P-Channel | 637pF @ 30V | 125m Ω @ 2.3A, 10V | 1V @ 250μA | 4.4A Ta | 17.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMFS4C03NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4c03nt1g-datasheets-0611.pdf | 8-PowerTDFN | Lead Free | 5 | 16 Weeks | 8 | ACTIVE (Last Updated: 6 days ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-F5 | 136A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 64W Tc | 900A | 549 mJ | N-Channel | 3071pF @ 15V | 2.1m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Ta 136A Tc | 45.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8451 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdd8451-datasheets-0764.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 30W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 3ns | 2 ns | 19 ns | 28A | 20V | SILICON | DRAIN | SWITCHING | 2.1V | 30W Tc | 9A | 78A | 0.024Ohm | 20 mJ | 40V | N-Channel | 990pF @ 20V | 2.1 V | 24m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta 28A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| DMT8012LFG-7 | Diodes Incorporated | $0.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt8012lfg7-datasheets-0808.pdf | 8-PowerVDFN | 1.949nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 4.9 ns | 3.8ns | 3.5 ns | 16.5 ns | 35A | 20V | 2.2W Ta 30W Tc | 80V | N-Channel | 1949pF @ 40V | 16m Ω @ 12A, 10V | 3V @ 250μA | 9.5A Ta 35A Tc | 34nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC50N04S55R8ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc50n04s55r8atma1-datasheets-9615.pdf | 8-PowerTDFN | 3 | 16 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 42W Tc | 50A | 200A | 0.0072Ohm | 30 mJ | N-Channel | 1090pF @ 25V | 5.8m Ω @ 25A, 10V | 3.4V @ 13μA | 50A Tc | 18nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD5C668NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/onsemiconductor-nvd5c668nlt4g-datasheets-0821.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | 60V | 44W Tc | N-Channel | 1300pF @ 25V | 8.9m Ω @ 25A, 10V | 2.1V @ 250μA | 49A Tc | 8.7nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD86N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ V | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std86n3lh5-datasheets-0543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 5MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD86 | 3 | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 6 ns | 14ns | 10.8 ns | 23.6 ns | 80A | 22V | SILICON | DRAIN | SWITCHING | 70W Tc | 30V | N-Channel | 1850pF @ 25V | 5m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 14nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD4126 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | 3W | 1 | FET General Purpose Powers | 43A | 25V | Single | 100V | 3W Ta 100W Tc | N-Channel | 2200pF @ 50V | 24m Ω @ 20A, 10V | 4V @ 250μA | 7.5A Ta 43A Tc | 34nC @ 10V | 7V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ068N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz068n06nsatma1-datasheets-0534.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | 1 | S-PDSO-N3 | 3ns | 40A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 46W Tc | 160A | 43 mJ | N-Channel | 1500pF @ 30V | 6.8m Ω @ 20A, 10V | 3.3V @ 20μA | 40A Tc | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM170N06PQ56 RLG | Taiwan Semiconductor Corporation | $2.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm170n06pq56rlg-datasheets-9710.pdf | 8-PowerTDFN | 5 | 32 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 73.5W Tc | 8A | 176A | 0.02Ohm | 43 mJ | N-Channel | 1556pF @ 30V | 17m Ω @ 8A, 10V | 2.5V @ 250μA | 44A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7000-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-2n7000g-datasheets-0616.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.334mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 10 ns | 200mA | 30V | SILICON | SWITCHING | 800mV | 1W Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Tj | 4.5V 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDS6690AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fds6690as-datasheets-0626.pdf | 30V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 12MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 5ns | 6 ns | 25 ns | 10A | 20V | SILICON | SWITCHING | 1.6V | 2.5W Ta | 30V | N-Channel | 910pF @ 15V | 1.6 V | 12m Ω @ 10A, 10V | 3V @ 1mA | 10A Ta | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| PSMN2R2-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r225ylc115-datasheets-0428.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 3.15MOhm | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 106W | 1 | 24 ns | 34ns | 16 ns | 36 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 636A | 60 mJ | 25V | N-Channel | 2542pF @ 12V | 2.4m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 39nC @ 10V | 4.5V 10V | ±20V |
