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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF7413TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irf7413trpbf-datasheets-0381.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 11mOhm | 8 | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 8.6 ns | 50ns | 46 ns | 52 ns | 13A | 20V | 30V | SILICON | SWITCHING | 6.3 mm | 3V | 2.5W Ta | 110 ns | 260 mJ | 30V | N-Channel | 1800pF @ 25V | 3 V | 11m Ω @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NVTFS5116PLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | Other Transistors | S-PDSO-F5 | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | SILICON | DRAIN | 60V | -3V | 3.2W Ta 21W Tc | 6A | 0.072Ohm | 45 mJ | -60V | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRL60HS118 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irl60hs118-datasheets-0438.pdf | 6-VDFN Exposed Pad | 1mm | 6 | 18 Weeks | yes | EAR99 | PG-TSDSON-6 | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.5W | 1 | 175°C | S-PDSO-N6 | 8.4 ns | 9 ns | 18.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.7V | 11.5W Tc | 56A | 22 mJ | 60V | N-Channel | 660pF @ 25V | 17m Ω @ 11A, 10V | 2.3V @ 10μA | 18.5A Tc | 8nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQS401EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqs401ent1ge3-datasheets-0506.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 40V | 62.5W Tc | 20mOhm | P-Channel | 1875pF @ 20V | 29mOhm @ 12A, 10V | 2.5V @ 250μA | 16A Tc | 21.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMP6A16KTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zxmp6a16ktc-datasheets-0444.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 17 Weeks | 3.949996g | No SVHC | 85mOhm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 9.76W | 1 | Other Transistors | R-PSSO-G2 | 3.5 ns | 4.1ns | 10 ns | 35 ns | 8.2A | 20V | SILICON | DRAIN | SWITCHING | 60V | -1V | 2.11W Ta | 5.4A | 27.2A | -60V | P-Channel | 1021pF @ 30V | 85m Ω @ 2.9A, 10V | 1V @ 250μA | 5.4A Ta | 24.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BUK9Y09-40B,115 | Nexperia USA Inc. | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk9y0940b115-datasheets-0472.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | SINGLE | GULL WING | 4 | 105.3W | 1 | 29 ns | 92ns | 83 ns | 97 ns | 75A | 15V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 105.3W Tc | MO-235 | 300A | 0.01Ohm | 40V | N-Channel | 2866pF @ 25V | 8m Ω @ 25A, 10V | 2.15V @ 1mA | 75A Tc | 30nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||
| ZVP4525ZTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvp4525zta-datasheets-0559.pdf | -250V | -200mA | TO-243AA | 4.6mm | 1.6mm | 2.6mm | Lead Free | 3 | 17 Weeks | 130.492855mg | No SVHC | 14Ohm | 4 | no | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | FLAT | 260 | 3 | 1 | 40 | 1.2W | 1 | Other Transistors | R-PSSO-F3 | 1.53 ns | 3.78ns | 3.78 ns | 17.5 ns | 205mA | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 1.2W Ta | 0.205A | -285V | P-Channel | 73pF @ 25V | 14 Ω @ 200mA, 10V | 2V @ 1mA | 205mA Ta | 3.45nC @ 10V | 3.5V 10V | ±40V | ||||||||||||||||||||||||||||||||||
| SI7114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7114adnt1ge3-datasheets-9992.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | FET General Purpose Powers | S-XDSO-C5 | 20 ns | 14ns | 10 ns | 20 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 3.7W Ta 39W Tc | 35A | 60A | 0.0075Ohm | 45 mJ | N-Channel | 1230pF @ 15V | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BUK9Y15-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y1560e115-datasheets-9252.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 95W | 1 | 11.4 ns | 17.3ns | 15.3 ns | 25.2 ns | 53A | 10V | 60V | SILICON | DRAIN | SWITCHING | 95W Tc | MO-235 | 60V | N-Channel | 2603pF @ 25V | 13m Ω @ 15A, 10V | 2.1V @ 1mA | 53A Tc | 17.2nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SPD08P06PGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spd08p06pgbtma1-datasheets-0350.pdf | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5mm | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 42W | 1 | Not Qualified | 175°C | R-PSSO-G2 | 16 ns | 46ns | 14 ns | 48 ns | -8.83A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -3V | 42W Tc | 70 mJ | -60V | P-Channel | 420pF @ 25V | 300m Ω @ 10A, 6.2V | 4V @ 250μA | 8.83A Ta | 13nC @ 10V | 6.2V | ±20V | |||||||||||||||||||||||||||||||||||
| CSD17579Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | AVALANCHE RATED | Tin | e3 | DUAL | FLAT | 260 | CSD17579 | Single | NOT SPECIFIED | 1 | 2 ns | 5ns | 1 ns | 11 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 29W Tc | 11A | 106A | 0.0142Ohm | 49 pF | 14 mJ | N-Channel | 998pF @ 15V | 10.2m Ω @ 8A, 10V | 1.9V @ 250μA | 20A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PSMN7R5-60YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn7r560ylx-datasheets-0195.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 147W Tc | MO-235 | 346A | 0.0087Ohm | 76.5 mJ | N-Channel | 4570pF @ 25V | 7.5m Ω @ 20A, 10V | 2.1V @ 1mA | 86A Tc | 31nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN2110GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zvn2110gta-datasheets-0391.pdf | 100V | 500mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 4Ohm | no | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 4 ns | 4ns | 8 ns | 8 ns | 500mA | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 0.5A | 6A | 100V | N-Channel | 75pF @ 25V | 4 Ω @ 1A, 10V | 2.4V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STD20NF06T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std20nf06t4-datasheets-0359.pdf | 60V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 40mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | STD20N | 3 | Single | 30 | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 30ns | 8 ns | 30 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 4V | 60W Tc | TO-252AA | 96A | 60V | N-Channel | 690pF @ 25V | 40m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPD50N06S4L12ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50n06s4l12atma2-datasheets-0410.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3.949996g | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 6 ns | 2ns | 5 ns | 25 ns | 50A | 16V | 60V | SILICON | DRAIN | 50W Tc | 200A | 33 mJ | N-Channel | 2890pF @ 25V | 12m Ω @ 50A, 10V | 2.2V @ 20μA | 50A Tc | 40nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA86EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja86ept1ge3-datasheets-0064.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 48W | 1 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 84A | 20 mJ | 80V | N-Channel | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| CSD16412Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16412 | 8 | Single | 3W | 1 | FET General Purpose Power | 5.5 ns | 7.1ns | 3.3 ns | 5.7 ns | 52A | 16V | 25V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta | 42 pF | 25V | N-Channel | 530pF @ 12.5V | 2 V | 11m Ω @ 10A, 10V | 2.3V @ 250μA | 14A Ta 52A Tc | 3.8nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||
| FDD8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd8896-datasheets-0287.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 5.7MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 106ns | 41 ns | 53 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 80W Tc | TO-252AA | 30V | N-Channel | 2525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 17A Ta 94A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| DMPH6050SFGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6050sfgq7-datasheets-0254.pdf | 8-PowerVDFN | 23 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.2W Ta | P-Channel | 1.293nF @ 30V | 50m Ω @ 7A, 10V | 3V @ 250μA | 6.1A Ta 18A Tc | 24.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2203 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2203-datasheets-9996.pdf | Die | 14 Weeks | Die | 80V | N-Channel | 88pF @ 50V | 80mOhm @ 1A, 5V | 2.5V @ 600μA | 1.7A | 0.83nC @ 5V | 5V | +5.75V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8327L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc8327l-datasheets-9893.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | 5 | 4 Weeks | 180mg | No SVHC | 8 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 1 | Single | 2.3W | 1 | FET General Purpose Power | 150°C | S-PDSO-N5 | 8.4 ns | 2.2ns | 2.2 ns | 20 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.3W Ta 30W Tc | MO-240BA | 60A | 0.0097Ohm | 25 mJ | 40V | N-Channel | 1850pF @ 20V | 9.7m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 14A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSP170PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsp170ph6327xtsa1-datasheets-0092.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | Tin | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.8W | 1 | Other Transistors | 14 ns | 28ns | 60 ns | 92 ns | -1.9A | 20V | -60V | SILICON | DRAIN | 60V | -3V | 1.8W Ta | 7.6A | 0.3Ohm | 70 mJ | -60V | P-Channel | 410pF @ 25V | 300m Ω @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| ZVN0545GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn0545gta-datasheets-0112.pdf | 450V | 140mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 50Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 7 ns | 7ns | 10 ns | 16 ns | 140mA | 20V | SILICON | DRAIN | SWITCHING | 3V | 2W Ta | 0.6A | 450V | N-Channel | 70pF @ 25V | 50 Ω @ 100mA, 10V | 3V @ 1mA | 140mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| CSD17507Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17507 | 8 | Single | 3W | 1 | FET General Purpose Power | 4.7 ns | 5.2ns | 2.3 ns | 5.7 ns | 65A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 3W Ta | 30 pF | 30V | N-Channel | 530pF @ 15V | 1.6 V | 10.8m Ω @ 11A, 10V | 2.1V @ 250μA | 13A Ta 65A Tc | 3.6nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI2333DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2333dst1e3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | Other Transistors | 25 ns | 60 ns | 72 ns | -4.1A | 8V | SILICON | SWITCHING | 12V | -1V | 750mW Ta | P-Channel | 1100pF @ 6V | -1 V | 32m Ω @ 5.3A, 4.5V | 1V @ 250μA | 4.1A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD19538Q2T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 6 Weeks | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | 750μm | AVALANCHE RATED | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD19538 | Single | 1 | 13.1A | SILICON | DRAIN | SWITCHING | 100V | 100V | 3.2V | 2.5W Ta 20.2W Tc | 34.4A | 0.072Ohm | 8 mJ | N-Channel | 454pF @ 50V | 59m Ω @ 5A, 10V | 3.8V @ 250μA | 13.1A Tc | 5.6nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMP4015SK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp4015sk313-datasheets-0144.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7mm | 2.39mm | 6.2mm | Lead Free | 2 | 15 Weeks | 3.949996g | No SVHC | 3 | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | R-PSSO-G2 | 13.2 ns | 10ns | 137 ns | 302.7 ns | 14A | 25V | SILICON | DRAIN | SWITCHING | 40V | -2V | 3.5W Ta | -40V | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 14A Ta | 47.5nC @ 5V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| PSMN016-100YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn016100ys115-datasheets-0204.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 117W | 1 | 19 ns | 24ns | 21 ns | 47 ns | 51A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 117W Tc | MO-235 | 87 mJ | 100V | N-Channel | 2744pF @ 50V | 16.3m Ω @ 15A, 10V | 4V @ 1mA | 51A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SUD08P06-155L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud08p06155lge3-datasheets-0188.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | yes | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | SUD08P06 | 4 | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 1.7W Ta 20.8W Tc | 8.2A | 18A | 0.155Ohm | 7.2 mJ | P-Channel | 450pF @ 25V | 155m Ω @ 5A, 10V | 3V @ 250μA | 8.4A Tc | 19nC @ 10V | 4.5V 10V | ±20V |
