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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DMP3010LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp3010lk3q13-datasheets-1690.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7mm | 2.39mm | 6.2mm | Lead Free | 2 | 15 Weeks | 3.949996g | No SVHC | 3 | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | 1 | Single | 40 | 3.4W | 1 | Other Transistors | R-PSSO-G2 | 11.4 ns | 9.4ns | 99.3 ns | 260.7 ns | 17A | 20V | SILICON | DRAIN | SWITCHING | 30V | 1.7W Ta | P-Channel | 6234pF @ 15V | 8m Ω @ 10A, 10V | 2.1V @ 250μA | 17A Ta | 59.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD70R600P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd70r600p7sauma1-datasheets-9318.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | PG-TO252-3 | 700V | 43W Tc | 490mOhm | N-Channel | 364pF @ 400V | 600mOhm @ 1.8A, 10V | 3.5V @ 90μA | 8.5A Tc | 10.5nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3707ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfr3707ztrpbf-datasheets-9379.pdf | 30V | 56A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.26mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 9.5MOhm | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 50W | 1 | R-PSSO-G2 | 8 ns | 11ns | 3.3 ns | 12 ns | 56A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.8V | 50W Tc | TO-252AA | 220A | 42 mJ | 30V | N-Channel | 1150pF @ 15V | 1.8 V | 9.5m Ω @ 15A, 10V | 2.25V @ 25μA | 56A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDS6375 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds6375-datasheets-9361.pdf | -20V | -8A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 24MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | Other Transistors | 12 ns | 9ns | 57 ns | 124 ns | 8A | 8V | -20V | SILICON | SWITCHING | 20V | -700mV | 2.5W Ta | 8A | -20V | P-Channel | 2694pF @ 10V | -700 mV | 24m Ω @ 8A, 4.5V | 1.5V @ 250μA | 8A Ta | 36nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| PSMN021-100YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn021100ylx-datasheets-9342.pdf | SC-100, SOT-669 | 12 Weeks | LFPAK56, Power-SO8 | 4.64nF | 49A | 100V | 147W Tc | 16.8mOhm | N-Channel | 4640pF @ 25V | 21.5mOhm @ 15A, 10V | 2.1V @ 1mA | 49A Tc | 65.6nC @ 10V | 21.5 mΩ | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP26M7UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp26m7ufg7-datasheets-9233.pdf | 8-PowerVDFN | 18 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40A | 20V | 2.3W Ta | P-Channel | 5940pF @ 10V | 6.7m Ω @ 15A, 4.5V | 1V @ 250μA | 18A Ta 40A Tc | 156nC @ 10V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS484ENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqs484enwt1ge3-datasheets-9352.pdf | PowerPAK® 1212-8 | 1.17mm | 5 | 12 Weeks | unknown | YES | DUAL | FLAT | 1 | 62.5W | 1 | 175°C | S-PDSO-F5 | 11 ns | 25 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 62.5W Tc | 64A | 40V | N-Channel | 1800pF @ 25V | 8m Ω @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9328TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf9328trpbf-datasheets-9452.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.75mm | 3.9878mm | Lead Free | 8 | 12 Weeks | No SVHC | 11.9MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 2.5W | 1 | Other Transistors | 150°C | 19 ns | 57ns | 66 ns | 80 ns | -12A | 20V | SILICON | SWITCHING | 30V | -1.8V | 2.5W Ta | 96A | -30V | P-Channel | 1680pF @ 25V | -1.8 V | 11.9m Ω @ 12A, 10V | 2.4V @ 25μA | 12A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NVTFS5C454NLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvtfs5c454nlwftag-datasheets-9463.pdf | 8-PowerWDFN | 18 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 55W Tc | N-Channel | 1600pF @ 25V | 4m Ω @ 20A, 10V | 2.2V @ 250μA | 85A Tc | 8.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3017SFGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp3017sfgq7-datasheets-9468.pdf | 8-PowerVDFN | 850μm | 15 Weeks | 8 | EAR99 | POWERDI3333-8 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 940mW | 150°C | 7.5 ns | 45.6 ns | -11.5A | 25V | 30V | 940mW Ta | -30V | P-Channel | 2246pF @ 15V | 10m Ω @ 11.5A, 10V | 3V @ 250μA | 11.5A Ta | 41nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR9343TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlr9343trpbf-datasheets-9482.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | 93MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 79W | 1 | R-PSSO-G2 | 9.5 ns | 24ns | 9.5 ns | 21 ns | -20A | 20V | SILICON | DRAIN | AMPLIFIER | 55V | 79W Tc | TO-252AA | 60A | -55V | P-Channel | 660pF @ 50V | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 20A Tc | 47nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSP125H6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bsp125h6327xtsa1-datasheets-9498.pdf | TO-261-4, TO-261AA | 6.5mm | 1.5mm | 3.5mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Halogen Free | DUAL | GULL WING | 4 | Single | 1.7W | 1 | 7.7 ns | 14.4ns | 110 ns | 20 ns | 120mA | 20V | 600V | SILICON | DRAIN | 1.9V | 1.8W Ta | 600V | N-Channel | 150pF @ 25V | 1.9 V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TSM900N10CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm900n10cprog-datasheets-9570.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | NOT SPECIFIED | NOT SPECIFIED | 100V | 50W Tc | N-Channel | 1480pF @ 50V | 90m Ω @ 5A, 10V | 2.5V @ 250μA | 15A Tc | 9.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM120N06LCP ROG | Taiwan Semiconductor Corporation | $2.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm120n06lcprog-datasheets-9076.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | YES | SINGLE | GULL WING | 260 | 30 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 125W Tc | 10A | 280A | 0.015Ohm | 60 mJ | N-Channel | 2118pF @ 30V | 12m Ω @ 10A, 10V | 2.5V @ 250μA | 70A Tc | 37nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS435DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis435dntt1ge3-datasheets-8943.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | unknown | DUAL | C BEND | NOT SPECIFIED | NOT SPECIFIED | 3.7W | 1 | S-PDSO-C5 | 30ns | 30 ns | 100 ns | 30A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 39W Tc | 0.0054Ohm | 20 mJ | -20V | P-Channel | 5700pF @ 10V | 5.4m Ω @ 13A, 4.5V | 900mV @ 250μA | 30A Tc | 180nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| FDD8780 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8780-datasheets-9083.pdf | 25V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 8.5MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | GULL WING | Single | 50W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 9ns | 24 ns | 43 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 50W Tc | TO-252AA | 60A | 224A | 25V | N-Channel | 1440pF @ 13V | 8.5m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| TSM480P06CP ROG | Taiwan Semiconductor Corporation | $6.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -50°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm480p06cprog-datasheets-9116.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 260 | 30 | 60V | 66W Tc | P-Channel | 1250pF @ 30V | 48m Ω @ 8A, 10V | 2.2V @ 250μA | 20A Tc | 22.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS481ENW-T1_GE3 | Vishay Siliconix | $12.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs481enwt1ge3-datasheets-9138.pdf | PowerPAK® 1212-8 | 1.17mm | 12 Weeks | 1 | 62.5W | 175°C | PowerPAK® 1212-8 | 7.1 ns | 15.3 ns | -4.7A | 20V | 150V | 62.5W Tc | 910mOhm | -150V | P-Channel | 385pF @ 75V | 1.095Ohm @ 5A, 10V | 3.5V @ 250μA | 4.7A Tc | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3410DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3410dvt1ge3-datasheets-9140.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 21 ns | 14ns | 9 ns | 20 ns | 8A | 20V | SILICON | SWITCHING | 30V | 30V | 3V | 2W Ta 4.1W Tc | 8A | 30A | N-Channel | 1295pF @ 15V | 3 V | 19.5m Ω @ 5A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI7619DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7619dnt1ge3-datasheets-9174.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 30 | 3.5W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 8ns | 12 ns | 45 ns | 10.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 3.5W Ta 27.8W Tc | 24A | 50A | 20 mJ | -30V | P-Channel | 1350pF @ 15V | 21m Ω @ 10.5A, 10V | 3V @ 250μA | 24A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| DMT67M8LPSW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt67m8lpsw13-datasheets-8122.pdf | 8-PowerTDFN | 22 Weeks | 60V | 2.8W Ta 62.5W Tc | N-Channel | 2130pF @ 30V | 6.2m Ω @ 20A, 10V | 2.5V @ 250μA | 17.3A Ta 82A Tc | 37.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMS4177PR2G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-ntms4177pr2g-datasheets-9166.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 31 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 8 | Single | 2.5W | 1 | Other Transistors | 18 ns | 13ns | 36 ns | 64 ns | -8.9A | 20V | SILICON | SWITCHING | 30V | -2.5V | 840mW Ta | 6.6A | -30V | P-Channel | 3100pF @ 24V | 12m Ω @ 11.4A, 10V | 2.5V @ 250μA | 6.6A Ta | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD50N04S4L08ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd50n04s4l08atma1-datasheets-9158.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 12 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 4 ns | 8ns | 18 ns | 11 ns | 50A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 46W Tc | 200A | 55 mJ | N-Channel | 2340pF @ 25V | 7.3m Ω @ 50A, 10V | 2.2V @ 17μA | 50A Tc | 30nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| DMP6023LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmp6023lss13-datasheets-9241.pdf | 8-SOIC (0.154, 3.90mm Width) | 2.569nF | 8 | 23 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | 6 ns | 7.1ns | 62 ns | 110 ns | 6.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 1.2W Ta | 50A | 0.025Ohm | 62.9 mJ | -60V | P-Channel | 2569pF @ 30V | 25m Ω @ 5A, 10V | 3V @ 250μA | 6.6A Ta | 53.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI9433BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si9433bdyt1e3-datasheets-9829.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 40 ns | 55ns | 30 ns | 65 ns | 4.5A | 12V | SILICON | 20V | -1.5V | 1.3W Ta | 0.04Ohm | -20V | P-Channel | 40m Ω @ 6.2A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| ZXMP7A17GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmp7a17gta-datasheets-9210.pdf | -70V | -3.7A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 160mOhm | no | EAR99 | LOW THRESHOLD; FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | Other Transistors | R-PDSO-G4 | 2.5 ns | 3.4ns | 8 ns | 27.9 ns | 3.7A | 20V | SILICON | DRAIN | SWITCHING | 70V | 2W Ta | 9.6A | P-Channel | 635pF @ 40V | 160m Ω @ 2.1A, 10V | 1V @ 250μA | 2.6A Ta | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| SPD04P10PLGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-spd04p10plgbtma1-datasheets-8985.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.35mm | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSSO-G2 | 4.6 ns | 5.7ns | 5 ns | 18 ns | -4.2A | 20V | -100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | -1.5V | 38W Tc | TO-252AA | 0.85Ohm | 57 mJ | -100V | P-Channel | 372pF @ 25V | 850m Ω @ 3A, 10V | 2V @ 380μA | 4.2A Tc | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSZ100N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz100n06nsatma1-datasheets-9059.pdf | 8-PowerTDFN | Contains Lead | 18 Weeks | 8 | Tin | Halogen Free | PG-TSDSON-8-FL | 1.075nF | 2ns | 40A | 20V | 60V | 60V | 2.1W Ta 36W Tc | 8.5mOhm | N-Channel | 1075pF @ 30V | 10mOhm @ 20A, 10V | 3.3V @ 14μA | 40A Tc | 15nC @ 10V | 10 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSQ015P10TR | ROHM Semiconductor | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | 6 | EAR99 | No | e1 | DUAL | GULL WING | 6 | 1 | 10 ns | 15ns | 10 ns | 60 ns | 1.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 600mW Ta | 6A | 0.47Ohm | P-Channel | 950pF @ 25V | 470m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 17nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A08GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a08gta-datasheets-8860.pdf | 60V | 2.5A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 80mOhm | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | R-PDSO-G4 | 2.6 ns | 2.1ns | 4.6 ns | 12.3 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 3.8A | 20A | N-Channel | 459pF @ 40V | 80m Ω @ 4.8A, 10V | 1V @ 250μA | 3.8A Ta | 5.8nC @ 10V | 4.5V 10V | ±20V |
