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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTD2955PT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd2955t4g-datasheets-9712.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 3 | Single | 55W | 1 | Other Transistors | R-PSSO-G2 | 10 ns | 45ns | 48 ns | 26 ns | -12A | 20V | SILICON | DRAIN | SWITCHING | 60V | 55W Tj | -60V | P-Channel | 750pF @ 25V | 180m Ω @ 6A, 10V | 4V @ 250μA | 12A Ta | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA50R500CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50r380cexksa1-datasheets-0409.pdf | TO-220-3 Full Pack | 3 | yes | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 28W Tc | TO-220AB | 24A | 0.5Ohm | 129 mJ | N-Channel | 433pF @ 100V | 500m Ω @ 2.3A, 13V | 3.5V @ 200μA | 7.6A Tc | 18.7nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R950CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd50r950ceauma1-datasheets-7430.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 10 Weeks | no | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500V | 34W Tc | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 4.3A Tc | 10.5nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU2905 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirlr2905trl-datasheets-5812.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 8 Weeks | EAR99 | AVALANCHE RATED | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 55V | 55V | 110W Tc | 42A | 160A | 0.03Ohm | 210 mJ | N-Channel | 1700pF @ 25V | 27m Ω @ 25A, 10V | 2V @ 250μA | 42A Tc | 48nC @ 5V | 4V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||
| SIA448DJ-T1-GE3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia448djt1ge3-datasheets-1655.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 13 Weeks | Unknown | 6 | EAR99 | No | 2 | Dual | 3.5W | 1 | S-PDSO-N3 | 8 ns | 30 ns | 12A | 8V | SILICON | DRAIN | SWITCHING | 400mV | 3.5W Ta 19.2W Tc | 30A | 20V | N-Channel | 1380pF @ 1V | 15m Ω @ 12.4A, 4.5V | 1V @ 250μA | 12A Tc | 35nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| IPW50R280CEFKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50r280cexksa1-datasheets-3458.pdf | TO-247-3 | Lead Free | 3 | 52 Weeks | 3 | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 8 ns | 6.4ns | 7.6 ns | 40 ns | 13A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 92W Tc | 42.9A | 0.28Ohm | N-Channel | 773pF @ 100V | 280m Ω @ 4.2A, 13V | 3.5V @ 350μA | 13A Tc | 32.6nC @ 10V | Super Junction | 13V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD4806NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4806n35g-datasheets-6879.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 6MOhm | 4 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | No | 4 | Single | 2.14W | 1 | 13.9 ns | 23.8ns | 4.7 ns | 26 ns | 14A | 20V | 1.4W Ta 68W Tc | 30V | N-Channel | 2142pF @ 12V | 6m Ω @ 30A, 10V | 2.5V @ 250μA | 11.3A Ta 79A Tc | 23nC @ 4.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4906NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4906n35g-datasheets-9359.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 5.5MOhm | 4 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | EAR99 | No | 4 | Single | 1.38W | 1 | 13 ns | 22 ns | 14A | 20V | 1.38W Ta 37.5W Tc | 30V | N-Channel | 1932pF @ 15V | 5.5m Ω @ 30A, 10V | 2.2V @ 250μA | 10.3A Ta 54A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA50R950CE | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp50r380cexksa1-datasheets-0409.pdf | TO-220-3 Full Pack | 3 | 6 Weeks | yes | EAR99 | compliant | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 500V | 500V | 25.7W Tc | TO-220AB | 12.8A | 0.95Ohm | 68 mJ | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 4.3A Tc | 10.5nC @ 10V | Super Junction | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF4104GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf4104gpbf-datasheets-1697.pdf | TO-220-3 | 40V | 140W Tc | N-Channel | 3000pF @ 25V | 5.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLZ44ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-auirlz44zs-datasheets-5921.pdf | TO-220AB | 10.67mm | 4.83mm | 9.65mm | No SVHC | 3 | 80W | Single | 80W | 1.62nF | 14 ns | 160ns | 42 ns | 25 ns | 51A | 16V | 55V | 13.5mOhm | 55V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3710ZGPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3710zgpbf-datasheets-1712.pdf | TO-220-3 | 100V | 160W Tc | N-Channel | 2900pF @ 25V | 18m Ω @ 35A, 10V | 4V @ 250mA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLS4030-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-auirls40307trl-datasheets-9907.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 10.67mm | 4.83mm | 9.65mm | Lead Free | 6 | No SVHC | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G6 | 53 ns | 160ns | 87 ns | 110 ns | 190A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1V | 370W Tc | 0.0039Ohm | 320 mJ | 100V | N-Channel | 11490pF @ 50V | 3.9m Ω @ 110A, 10V | 2.5V @ 250μA | 190A Tc | 140nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| AUIRLSL3036 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irls3036trrpbf-datasheets-1267.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10 Weeks | 380W | TO-262 | 11.21nF | 195A | 60V | 380W Tc | 1.9mOhm | 60V | N-Channel | 11210pF @ 50V | 2.4mOhm @ 165A, 10V | 2.5V @ 250μA | 195A Tc | 140nC @ 4.5V | 2.4 mΩ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRLU3110Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-auirlu3110z-datasheets-1637.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 2.39mm | 6.22mm | 3 | 11 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | 24 ns | 110ns | 48 ns | 33 ns | 63A | 16V | SILICON | DRAIN | SWITCHING | 1V | 140W Tc | 42A | 250A | 100V | N-Channel | 3980pF @ 25V | 1 V | 14m Ω @ 38A, 10V | 2.5V @ 100μA | 42A Tc | 48nC @ 4.5V | ||||||||||||||||||||||||||||||||||||
| IRF1902GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 1.4986mm | 3.9878mm | 8 | 2.5W | 2.5W | 8-SO | 310pF | 5.9 ns | 13ns | 19 ns | 23 ns | 4.2A | 12V | 20V | 85mOhm | 20V | N-Channel | 310pF @ 15V | 85mOhm @ 4A, 4.5V | 700mV @ 250μA | 4.2A Ta | 7.5nC @ 4.5V | 85 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C450NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c450nwfaft1g-datasheets-0695.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.6W Ta 68W Tc | N-Channel | 1600pF @ 25V | 3.3m Ω @ 50A, 10V | 3.5V @ 65μA | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C450NLT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c450nlwfaft1g-datasheets-4970.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | yes | Tin | not_compliant | e3 | 11 ns | 110ns | 5 ns | 21 ns | 27A | 20V | 40V | 3.7W Ta 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C410NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c410naft1g-datasheets-8527.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 250μA | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4866BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4866bdyt1ge3-datasheets-4881.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 15 Weeks | 186.993455mg | 5.3MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 150°C | 13 ns | 12ns | 9 ns | 57 ns | 16.1A | 8V | SILICON | SWITCHING | 1V | 4.45W Tc | 50A | 20 mJ | 12V | N-Channel | 5020pF @ 6V | 5.3m Ω @ 12A, 4.5V | 1V @ 250μA | 21.5A Tc | 80nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||
| NDPL070N10BG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndpl070n10bg-datasheets-8696.pdf | TO-220-3 | Lead Free | 4 Weeks | No SVHC | 3 | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30 ns | 180ns | 40 ns | 55 ns | 70A | 20V | 100V | 4V | 2.1W Ta 72W Tc | N-Channel | 2010pF @ 50V | 10.8m Ω @ 35A, 15V | 4V @ 1mA | 70A Ta | 26nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C442NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c442nwfaft1g-datasheets-0869.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 4V @ 250μA | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDBA100N10BT4H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ndba100n10bt4h-datasheets-8685.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 4 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | 40 ns | 385ns | 52 ns | 68 ns | 100A | 20V | 100V | 110W Tc | N-Channel | 2950pF @ 50V | 6.9m Ω @ 50A, 15V | 4V @ 1mA | 100A Ta | 35nC @ 10V | 10V 15V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDI9409-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdi9409f085-datasheets-8615.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 2.084g | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | not_compliant | NOT SPECIFIED | Single | NOT SPECIFIED | 80A | 40V | 94W Tj | N-Channel | 2980pF @ 25V | 3.8m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1315DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1315dlt1ge3-datasheets-8442.pdf | SC-70, SOT-323 | Lead Free | 3 | 15 Weeks | 124.596154mg | No SVHC | 336mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 300mW | 1 | Other Transistors | 10 ns | 15ns | 8 ns | 14 ns | -900mA | 8V | SILICON | SWITCHING | -400mV | 300mW Ta 400mW Tc | 0.9A | -8V | P-Channel | 112pF @ 4V | 336m Ω @ 800mA, 4.5V | 800mV @ 250μA | 900mA Tc | 3.4nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| IPB60R230P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r230p6atma1-datasheets-8641.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 16.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 126W Tc | 48A | 0.23Ohm | 352 mJ | N-Channel | 1450pF @ 100V | 230m Ω @ 6.4A, 10V | 4.5V @ 530μA | 16.8A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C430NWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c430naft1g-datasheets-1229.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.8W Ta 106W Tc | N-Channel | 3300pF @ 25V | 1.7m Ω @ 50A, 10V | 3.5V @ 250μA | 47nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUXTLR3110Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | DPAK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C442NWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c442nwfaft1g-datasheets-0869.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 3.7W Ta 83W Tc | N-Channel | 2100pF @ 25V | 2.3m Ω @ 50A, 10V | 4V @ 250μA | 32nC @ 10V | 10V | ±20V |
