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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD50R800CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r800cebtma1-datasheets-8242.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | PG-TO252-3 | 280pF | 6.2 ns | 5.5ns | 15.9 ns | 26 ns | 5A | 20V | 500V | 60W Tc | N-Channel | 280pF @ 100V | 800mOhm @ 1.5A, 13V | 3.5V @ 130μA | 5A Tc | 12.4nC @ 10V | 800 mΩ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| DMG2302UQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmg2302uq13-datasheets-8054.pdf | TO-236-3, SC-59, SOT-23-3 | 5 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4.2A | 20V | 800mW Ta | N-Channel | 594.3pF @ 10V | 90m Ω @ 3.6A, 4.5V | 1V @ 50μA | 4.2A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA100JT12-227 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2016 | SOT-227-4, miniBLOC | 18 Weeks | 160A | 1200V | 535W Tc | 14400pF @ 800V | 10m Ω @ 100A | 160A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N04S2L03AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb100n04s2l03atma2-datasheets-3816.pdf | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0033Ohm | 810 mJ | N-Channel | 6000pF @ 25V | 3.3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c404nt1g-datasheets-7136.pdf | 8-PowerTDFN | Lead Free | 30 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 378A | 40V | 3.9W Ta 200W Tc | N-Channel | 8400pF @ 25V | 0.7m Ω @ 50A, 10V | 4V @ 250μA | 53A Ta 378A Tc | 128nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS9410-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9410f085-datasheets-8021.pdf | 8-PowerTDFN | yes | not_compliant | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 40V | 75W Tj | N-Channel | 1790pF @ 20V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6002DPH-E0#T2 | Renesas Electronics America | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6002dphe0t2-datasheets-8130.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 16 Weeks | EAR99 | 4 | FET General Purpose Power | 2A | Single | 600V | 30W Tc | 2A | N-Channel | 165pF @ 25V | 6.8 Ω @ 1A, 10V | 2A Ta | 6.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C670NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c670nlwfaft1g-datasheets-4576.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 15 hours ago) | yes | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | R-PDSO-F5 | 71A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.6W Ta 61W Tc | 440A | 166 mJ | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 250μA | 17A Ta 71A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD50R380CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r380ceauma1-datasheets-3571.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 98W Tc | N-Channel | 584pF @ 100V | 380m Ω @ 3.2A, 13V | 3.5V @ 260μA | 9.9A Tc | 24.8nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP06CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp06cn10ng-datasheets-1092.pdf | TO-220-3 | 3 | EAR99 | unknown | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 214W Tc | TO-220AB | 100A | 400A | 0.0065Ohm | 480 mJ | N-Channel | 9200pF @ 50V | 6.5m Ω @ 100A, 10V | 4V @ 180μA | 100A Tc | 139nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMG2302UQ-13 | Diodes Incorporated | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg2302uq13-datasheets-8054.pdf | TO-236-3, SC-59, SOT-23-3 | 5 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 4.2A | 20V | 800mW Ta | N-Channel | 594.3pF @ 10V | 90m Ω @ 3.6A, 4.5V | 1V @ 50μA | 4.2A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 3LP01M-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | /files/onsemiconductor-3lp01mtlh-datasheets-8056.pdf | SC-70, SOT-323 | 2mm | 900μm | 1.25mm | Lead Free | 3 | LAST SHIPMENTS (Last Updated: 11 hours ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 150mW | 1 | Other Transistors | 24 ns | 55ns | 130 ns | 120 ns | 100mA | 10V | 30V | 150mW Ta | -30V | P-Channel | 7.5pF @ 10V | 10.4 Ω @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||
| RJK0629DPE-00#J3 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0629dpe00j3-datasheets-8066.pdf | SC-83 | 16 Weeks | NOT SPECIFIED | 4 | NOT SPECIFIED | 85A | 60V | 100W Tc | N-Channel | 4100pF @ 10V | 4.5m Ω @ 43A, 10V | 85A Ta | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R520CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r520cpatma1-datasheets-8068.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | No | PG-TO252-3 | 630pF | 17 ns | 12ns | 16 ns | 74 ns | 6.8A | 20V | 600V | 600V | 66W Tc | N-Channel | 630pF @ 100V | 520mOhm @ 3.8A, 10V | 3.5V @ 250μA | 6.8A Tc | 31nC @ 10V | 520 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPD60R380P6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r380p6atma1-datasheets-8528.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 29A | 0.38Ohm | 210 mJ | N-Channel | 877pF @ 100V | 380m Ω @ 3.8A, 10V | 4.5V @ 320μA | 10.6A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB60R380P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r380p6atma1-datasheets-7962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.6A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 29A | 0.38Ohm | 210 mJ | N-Channel | 877pF @ 100V | 380m Ω @ 3.8A, 10V | 4.5V @ 320μA | 10.6A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NVMFS5C423NLWFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c423nlt1g-datasheets-1851.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 2 weeks ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 150A | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 20V | 2m Ω @ 50A, 10V | 2V @ 250μA | 31A Ta 150A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R950CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipd50r950ceauma1-datasheets-7430.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 4.3A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 53W Tc | 12.8A | 0.95Ohm | 68 mJ | N-Channel | 231pF @ 100V | 950m Ω @ 1.2A, 13V | 3.5V @ 100μA | 4.3A Tc | 10.5nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| GA100JT17-227 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | SOT-227-4, miniBLOC | 18 Weeks | 160A | 1700V | 535W Tc | 14400pF @ 800V | 10m Ω @ 100A | 160A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R650CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r650ceauma1-datasheets-3165.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 500V | 69W Tc | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 6.1A Tc | 15nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R500CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd50r500cebtma1-datasheets-9366.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3.949996g | 3 | 1 | Single | 57W | 1 | PG-TO252-3 | 433pF | 6 ns | 5ns | 12 ns | 30 ns | 7.6A | 20V | 500V | 57W Tc | 500mOhm | N-Channel | 433pF @ 100V | 500mOhm @ 2.3A, 13V | 3.5V @ 200μA | 7.6A Tc | 18.7nC @ 10V | 500 mΩ | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMCM650VNEZ | Nexperia USA Inc. | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmcm650vnez-datasheets-7696.pdf | 6-XFBGA, WLCSP | 7 Weeks | 6.4A | 12V | 556mW Ta 12.5W Tc | N-Channel | 1060pF @ 6V | 25m Ω @ 3A, 4.5V | 900mV @ 250μA | 6.4A Ta | 15.4nC @ 4.5V | 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UFDQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2400ufdq7-datasheets-8019.pdf | 3-PowerUDFN | 6 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 900mA | 20V | 400mW Ta | N-Channel | 37pF @ 16V | 600m Ω @ 200mA, 4.5V | 1V @ 250μA | 900mA Ta | 0.5nC @ 4.5V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDD60N900U1-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-ndd60n900u11g-datasheets-7774.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 9 Weeks | LAST SHIPMENTS (Last Updated: 3 days ago) | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 5.7A | 600V | 74W Tc | N-Channel | 360pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5.7A Tc | 12nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP200N15N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd200n15n3gatma1-datasheets-1401.pdf | TO-220-3 | 1 | 150W | 1 | PG-TO220-3 | 1.82nF | 50A | 20V | 150V | 150W Tc | N-Channel | 1820pF @ 75V | 20mOhm @ 50A, 10V | 4V @ 90μA | 50A Tc | 31nC @ 10V | 20 mΩ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R380P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r380p6atma1-datasheets-8528.pdf | TO-220-3 | Lead Free | 12 Weeks | 3 | Halogen Free | PG-TO220-3 | 877pF | 12 ns | 6ns | 7 ns | 33 ns | 10.6A | 20V | 600V | 600V | 83W Tc | 342mOhm | N-Channel | 877pF @ 100V | 380mOhm @ 3.8A, 10V | 4.5V @ 320μA | 10.6A Tc | 19nC @ 10V | 380 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDF04N60ZG-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 4 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW60R330P6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-ipw60r330p6fksa1-datasheets-7831.pdf | TO-247-3 | Lead Free | 12 Weeks | 3 | PG-TO247-3 | 1.01nF | 12 ns | 7ns | 33 ns | 12A | 20V | 600V | 600V | 93W Tc | 297mOhm | N-Channel | 1010pF @ 100V | 330mOhm @ 4.5A, 10V | 4.5V @ 370μA | 12A Tc | 22nC @ 10V | 330 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPD25N06S4L30ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd25n06s4l30atma2-datasheets-6894.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 60V | 29W Tc | N-Channel | 1220pF @ 25V | 30m Ω @ 25A, 10V | 2.2V @ 8μA | 25A Tc | 16.3nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R330P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | /files/infineontechnologies-ipw60r330p6fksa1-datasheets-7831.pdf | TO-220-3 Full Pack | Lead Free | 12 Weeks | 6.000006g | 3 | Halogen Free | 1 | PG-TO220-FP | 1.01nF | 12 ns | 7ns | 7 ns | 33 ns | 12A | 20V | 600V | 600V | 32W Tc | 297mOhm | N-Channel | 1010pF @ 100V | 330mOhm @ 4.5A, 10V | 4.5V @ 370μA | 12A Tc | 22nC @ 10V | 330 mΩ | 10V | ±20V |
