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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MCH6421-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6421tle-datasheets-3951.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 7.5 ns | 26ns | 32 ns | 38 ns | 5.5A | 12V | 20V | 1.3V | 1.5W Ta | N-Channel | 410pF @ 10V | 38m Ω @ 2A, 4.5V | 1.3V @ 1mA | 5.5A Ta | 5.1nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT69M8LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt69m8lss13-datasheets-8330.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 9.8A | 60V | 1.25W Ta | N-Channel | 1925pF @ 30V | 12m Ω @ 13.5A, 10V | 2V @ 250μA | 9.8A Ta | 33.5nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH6344-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-mch6344tlh-datasheets-6839.pdf | 6-SMD, Flat Leads | Lead Free | No SVHC | 88 | yes | 4.5 ns | 4.2ns | 10.6 ns | 20 ns | 2A | 20V | 30V | -2.6V | 800mW Ta | P-Channel | 172pF @ 10V | 150m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF7739L2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf7739l2tr-datasheets-9830.pdf | DirectFET™ Isometric L8 | 9 | EAR99 | HIGH RELIABILITY | compliant | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XBCC-N9 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3.8W Ta 125W Tc | 46A | 1070A | 0.001Ohm | 160 mJ | N-Channel | 11880pF @ 25V | 1m Ω @ 160A, 10V | 4V @ 250μA | 46A Ta 270A Tc | 330nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SCH1331-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/onsemiconductor-sch1331tlh-datasheets-4188.pdf | SOT-563, SOT-666 | Lead Free | 6 | 4 Weeks | No SVHC | 6 | yes | e6 | Tin/Bismuth (Sn/Bi) | DUAL | FLAT | 1 | 8.8 ns | 80ns | 50 ns | 41 ns | 3A | 10V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | -1.3V | 1W Ta | 3A | 0.084Ohm | P-Channel | 405pF @ 6V | 84m Ω @ 1.5A, 4.5V | 1.3V @ 1mA | 3A Ta | 5.6nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IPP086N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2014 | /files/infineontechnologies-ipp086n10n3ghksa1-datasheets-8293.pdf | TO-220-3 | 100V | 125W Tc | N-Channel | 3980pF @ 50V | 8.6m Ω @ 73A, 10V | 3.5V @ 75μA | 80A Tc | 55nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIPC26N60S5X1SA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | RoHS Compliant | 2015 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R190P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r190p6atma1-datasheets-7997.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 20.2A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 151W Tc | 57A | 0.19Ohm | 419 mJ | N-Channel | 1750pF @ 100V | 190m Ω @ 7.6A, 10V | 4.5V @ 630μA | 20.2A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MCH6331-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-mch6331tlh-datasheets-4167.pdf | 6-SMD, Flat Leads | Lead Free | 4 Weeks | No SVHC | 88 | yes | 5.4 ns | 12ns | 19 ns | 26 ns | 3.5A | 20V | 30V | -2.6V | 1.5W Ta | P-Channel | 250pF @ 10V | 98m Ω @ 1.5A, 10V | 2.6V @ 1mA | 3.5A Ta | 5nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP075N15N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi075n15n3gxksa1-datasheets-2038.pdf | TO-220-3 | 8 Weeks | No | 300W | 1 | PG-TO220-3 | 5.47nF | 25 ns | 35ns | 14 ns | 46 ns | 100A | 20V | 150V | 300W Tc | 7.2mOhm | 150V | N-Channel | 5470pF @ 75V | 7.5mOhm @ 100A, 10V | 4V @ 270μA | 100A Tc | 93nC @ 10V | 7.5 mΩ | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPP072N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp072n10n3ghksa1-datasheets-8220.pdf | TO-220-3 | 3 | No | PG-TO220-3 | 4.91nF | 19 ns | 37ns | 9 ns | 37 ns | 80A | 20V | 100V | 150W Tc | 7.2mOhm | 80V | N-Channel | 4910pF @ 50V | 7.2mOhm @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 68nC @ 10V | 7.2 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP052N06L3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp052n06l3gxksa1-datasheets-2713.pdf | TO-220-3 | PG-TO220-3 | 60V | 115W Tc | N-Channel | 8400pF @ 30V | 5mOhm @ 80A, 10V | 2.2V @ 58μA | 80A Tc | 50nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP100N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp100n08n3ghksa1-datasheets-8247.pdf | TO-220-3 | 3 | EAR99 | No | SINGLE | 100W | 1 | R-PSFM-T3 | 14 ns | 46ns | 5 ns | 22 ns | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 80V | 80V | 100W Tc | TO-220AB | 280A | 90 mJ | N-Channel | 2410pF @ 40V | 10m Ω @ 46A, 10V | 3.5V @ 46μA | 70A Tc | 35nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP030N10N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi030n10n3gxksa1-datasheets-9710.pdf | TO-220-3 | 300W | 1 | PG-TO220-3 | 14.8nF | 34 ns | 58ns | 28 ns | 84 ns | 100A | 20V | 100V | 300W Tc | N-Channel | 14800pF @ 50V | 3mOhm @ 100A, 10V | 3.5V @ 275μA | 100A Tc | 206nC @ 10V | 3 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPP12CN10NGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp12cn10ngxksa1-datasheets-8255.pdf | TO-220-3 | 3 | EAR99 | FAST SWITCHING | unknown | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 125W Tc | TO-220AB | 67A | 268A | 0.0129Ohm | 154 mJ | N-Channel | 4320pF @ 50V | 12.9m Ω @ 67A, 10V | 4V @ 83μA | 67A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP057N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp057n08n3ghksa1-datasheets-8258.pdf | TO-220-3 | 3 | EAR99 | SINGLE | 150W | 1 | FET General Purpose Power | R-PSFM-T3 | 18 ns | 66ns | 10 ns | 38 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | TO-220AB | 320A | 0.0057Ohm | 80V | N-Channel | 4750pF @ 40V | 5.7m Ω @ 80A, 10V | 3.5V @ 90μA | 80A Tc | 69nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SCH1337-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-sch1337tlh-datasheets-4268.pdf | SOT-563, SOT-666 | Lead Free | 4 Weeks | No SVHC | 6 | 4.5 ns | 4.2ns | 10.6 ns | 20 ns | 2A | 20V | 30V | -2.6V | 800mW Ta | P-Channel | 172pF @ 10V | 150m Ω @ 1A, 10V | 2.6V @ 1mA | 2A Ta | 3.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP040N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp040n06n3ghksa1-datasheets-8164.pdf | TO-220-3 | PG-TO220-3 | 60V | 188W Tc | N-Channel | 11000pF @ 30V | 4mOhm @ 90A, 10V | 4V @ 90μA | 90A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCH3374-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | /files/onsemiconductor-mch3374tle-datasheets-7001.pdf | 3-SMD, Flat Lead | Lead Free | 6 Weeks | No SVHC | 70 | yes | 8.8 ns | 80ns | 50 ns | 41 ns | 3A | 8V | 12V | -1.4V | 1W Ta | P-Channel | 405pF @ 6V | 70m Ω @ 1.5A, 4.5V | 1.4V @ 1mA | 3A Ta | 5.6nC @ 4.5V | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP093N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp093n06n3ghksa1-datasheets-8178.pdf | TO-220-3 | 3 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED | unknown | SINGLE | 1 | 15 ns | 40ns | 5 ns | 20 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 71W Tc | TO-220AB | 200A | N-Channel | 2900pF @ 30V | 9.3m Ω @ 50A, 10V | 4V @ 34μA | 50A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDMS9409-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9409f085-datasheets-8182.pdf | 8-PowerTDFN | 172.8mg | 8 | LIFETIME (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 65A | 40V | 100W Tj | N-Channel | 3130pF @ 20V | 3.2m Ω @ 65A, 10V | 4V @ 250μA | 65A Tc | 62nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3360-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-cph3360tlw-datasheets-8190.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 4 Weeks | No SVHC | 3 | yes | Tin | unknown | e6 | DUAL | GULL WING | 1 | 4 ns | 3.3ns | 5.4 ns | 12 ns | 1.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.6V | 900mW Ta | P-Channel | 82pF @ 10V | 303m Ω @ 800mA, 10V | 2.6V @ 1mA | 1.6A Ta | 2.2nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPP100N04S2L03AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-ipb100n04s2l03atma2-datasheets-3816.pdf | TO-220-3 | 3 | AVALANCHE RATED | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 100A | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | 300W Tc | TO-220AB | 400A | 0.0033Ohm | 810 mJ | N-Channel | 6000pF @ 25V | 3.3m Ω @ 80A, 10V | 2V @ 250μA | 100A Tc | 230nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C404NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c404nt1g-datasheets-7136.pdf | 8-PowerTDFN | Lead Free | 30 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | 378A | 40V | 3.9W Ta 200W Tc | N-Channel | 8400pF @ 25V | 0.7m Ω @ 50A, 10V | 4V @ 250μA | 53A Ta 378A Tc | 128nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS9410-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdms9410f085-datasheets-8021.pdf | 8-PowerTDFN | yes | not_compliant | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 40V | 75W Tj | N-Channel | 1790pF @ 20V | 4.4m Ω @ 50A, 10V | 4V @ 250μA | 50A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK6002DPH-E0#T2 | Renesas Electronics America | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk6002dphe0t2-datasheets-8130.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 16 Weeks | EAR99 | 4 | FET General Purpose Power | 2A | Single | 600V | 30W Tc | 2A | N-Channel | 165pF @ 25V | 6.8 Ω @ 1A, 10V | 2A Ta | 6.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C670NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/onsemiconductor-nvmfs5c670nlwfaft1g-datasheets-4576.pdf | 8-PowerTDFN | Lead Free | 5 | 38 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 15 hours ago) | yes | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | 1 | R-PDSO-F5 | 71A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 3.6W Ta 61W Tc | 440A | 166 mJ | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 250μA | 17A Ta 71A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPP037N08N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp037n08n3ghksa1-datasheets-8136.pdf | TO-220-3 | No | 214W | 1 | PG-TO220-3 | 8.11nF | 23 ns | 79ns | 14 ns | 45 ns | 100A | 20V | 80V | 214W Tc | N-Channel | 8110pF @ 40V | 3.75mOhm @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 3.75 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP084N06L3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp084n06l3ghksa1-datasheets-8140.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | 3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | unknown | Single | 79W | 1 | 15 ns | 26ns | 7 ns | 37 ns | 50A | 20V | SILICON | SWITCHING | 60V | 60V | 79W Tc | TO-220AB | 200A | 0.0084Ohm | N-Channel | 4900pF @ 30V | 8.4m Ω @ 50A, 10V | 2.2V @ 34μA | 50A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPP057N06N3GHKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp057n06n3ghksa1-datasheets-8144.pdf | TO-220-3 | 60V | 115W Tc | N-Channel | 6600pF @ 30V | 5.7m Ω @ 80A, 10V | 4V @ 58μA | 80A Tc | 82nC @ 10V | 10V | ±20V |
