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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NP33N06YDG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np33n06ydge1ay-datasheets-4634.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | DUAL | 8 | 1 | FET General Purpose Power | R-PDSO-F5 | 16 ns | 12ns | 6 ns | 54 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1W Ta 97W Tc | 0.02Ohm | 220 pF | N-Channel | 3900pF @ 25V | 14m Ω @ 16.5A, 10V | 2.5V @ 250μA | 33A Tc | 78nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||
| NP60N03SUG-E1-AY | Renesas Electronics America | $4.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np60n03suge1ay-datasheets-4653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | 32 ns | 20ns | 13 ns | 64 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.2W Ta 105W Tc | TO-252AA | 240A | N-Channel | 7500pF @ 25V | 3.8m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| NP180N055TUJ-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np180n055tuje1ay-datasheets-4664.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 16 Weeks | 7 | EAR99 | No | SINGLE | GULL WING | 7 | 1 | FET General Purpose Power | R-PSSO-G6 | 45 ns | 20ns | 10 ns | 100 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 348W Tc | 0.0023Ohm | N-Channel | 14250pF @ 25V | 2.3m Ω @ 90A, 10V | 4V @ 250μA | 180A Tc | 230nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NP50P04SDG-E1-AY | Renesas Electronics America | $5.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np50p04sdge1ay-datasheets-4651.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1.2W | 1 | Other Transistors | R-PSSO-G2 | 13 ns | 13ns | 180 ns | 405 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.2W Ta 84W Tc | P-Channel | 5000pF @ 10V | 9.6m Ω @ 25A, 10V | 2.5V @ 250μA | 50A Tc | 100nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||
| NP75P03YDG-E1-AY | Renesas Electronics America | $2.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np75p03ydge1ay-datasheets-4659.pdf | 8-SMD, Flat Lead Exposed Pad | Lead Free | 5 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | DUAL | 8 | 1W | 1 | Other Transistors | R-PDSO-F5 | 13 ns | 13ns | 180 ns | 270 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1W Ta 138W Tc | 0.0096Ohm | 700 pF | P-Channel | 4800pF @ 25V | 6.2m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 141nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||
| NP23N06YDG-E1-AY | Renesas Electronics America | $0.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np23n06ydge1ay-datasheets-4673.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | DUAL | 8 | 1 | FET General Purpose Power | R-PDSO-F5 | 12 ns | 6ns | 4 ns | 36 ns | 23A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1W Ta 60W Tc | 0.037Ohm | 130 pF | N-Channel | 1800pF @ 25V | 27m Ω @ 11.5A, 10V | 2.5V @ 250μA | 23A Tc | 41nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||
| NP35N04YUG-E1-AY | Renesas Electronics America | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np35n04yuge1ay-datasheets-4645.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 12 Weeks | 8 | EAR99 | No | DUAL | 8 | 1 | FET General Purpose Power | R-PDSO-F5 | 18 ns | 10ns | 5 ns | 38 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1W Ta 77W Tc | 0.01Ohm | 220 pF | N-Channel | 2850pF @ 25V | 10m Ω @ 17.5A, 10V | 4V @ 250μA | 35A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| TK50E08K3,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | 104W | TO-220-3 | 50A | 75V | N-Channel | 12mOhm @ 25A, 10V | 50A Tc | 55nC @ 10V | 12 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP84N075KUE-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np84n075kuee1ay-datasheets-4599.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 3 | 1.8W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 21ns | 12 ns | 72 ns | 84A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 1.8W Ta 200W Tc | 260A | 333 mJ | N-Channel | 8400pF @ 25V | 12.5m Ω @ 42A, 10V | 4V @ 250μA | 84A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| TK16A45D(STA4,Q,M) | Toshiba Semiconductor and Storage | $10.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 16A | 450V | N-Channel | 270mOhm @ 8A, 10V | 16A | 270 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT2918L | Alpha & Omega Semiconductor Inc. | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aot430-datasheets-0079.pdf | TO-220-3 | 16 Weeks | FET General Purpose Power | 90A | Single | 100V | 2.1W Ta 267W Tc | N-Channel | 3430pF @ 50V | 7m Ω @ 20A, 10V | 3.9V @ 250μA | 13A Ta 90A Tc | 53nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NP90N04VUG-E1-AY | Renesas Electronics America | $15.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np90n04vuge1ay-datasheets-4548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 26 Weeks | EAR99 | No | SINGLE | GULL WING | 3 | 1.2W | 1 | FET General Purpose Power | R-PSSO-G2 | 32 ns | 20ns | 11 ns | 65 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.2W Ta 105W Tc | 300A | 0.004Ohm | N-Channel | 7500pF @ 25V | 4m Ω @ 45A, 10V | 4V @ 250μA | 90A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||
| NP88N055KUG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np88n055kuge1ay-datasheets-4617.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | EAR99 | No | 3 | 1.8W | 1 | FET General Purpose Power | 39 ns | 34ns | 15 ns | 120 ns | 88A | 20V | Single | 55V | 1.8W Ta 200W Tc | N-Channel | 14400pF @ 25V | 3.9m Ω @ 44A, 10V | 4V @ 250μA | 88A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK4A65DA(STA4,Q,M) | Toshiba Semiconductor and Storage | $5.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-220-3 Full Pack | 16 Weeks | 3 | No | TO-220SIS | 600pF | 18ns | 8 ns | 3.5A | 30V | 650V | 35W Tc | N-Channel | 600pF @ 25V | 1.9Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 12nC @ 10V | 1.9 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| TK4P55DA(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | No | D-Pak | 380pF | 15ns | 7 ns | 3.5A | 30V | 550V | 80W Tc | N-Channel | 380pF @ 25V | 2.45Ohm @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 9nC @ 10V | 2.45 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| 2SK3811-ZP-E1-AY | Renesas Electronics America | $1.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk3811zpe1ay-datasheets-4574.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | 1.5W | 1 | FET General Purpose Power | 110A | 20V | Single | 40V | 1.5W Ta 213W Tc | N-Channel | 17700pF @ 10V | 1.8m Ω @ 55A, 10V | 110A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TK50E10K3(S1SS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 12 Weeks | TO-220-3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK50E06K3A,S1X(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 | 12 Weeks | No | 104W | 104W | 1 | TO-220-3 | 50A | 60V | N-Channel | 8.5mOhm @ 25A, 10V | 50A Tc | 54nC @ 10V | 8.5 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPC6008-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.4ns | 2 ns | 5.9A | 20V | 30V | 700mW Ta | N-Channel | 300pF @ 10V | 60m Ω @ 3A, 10V | 2.3V @ 100μA | 5.9A Ta | 4.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TPCC8009,LQ(O | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 30V | N-Channel | 1270pF @ 10V | 7m Ω @ 12A, 10V | 3V @ 200μA | 24A Ta | 26nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8A05-H(TE12L,QM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSV-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 1.7nF | 2ns | 2.5 ns | 10A | 20V | 30V | 1W Ta | N-Channel | 1700pF @ 10V | 13.3mOhm @ 5A, 10V | 2.3V @ 1mA | 10A Ta | 15nC @ 10V | Schottky Diode (Body) | 13.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPC8126,LQ(CM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 12 Weeks | 8 | No | 8-SOP (5.5x6.0) | 2.4nF | 8ns | 65 ns | 11A | 30V | 30V | 1W Ta | P-Channel | 2400pF @ 10V | 10mOhm @ 5.5A, 10V | 2V @ 500μA | 11A Ta | 56nC @ 10V | 10 mΩ | 4.5V 10V | +20V, -25V | ||||||||||||||||||||||||||||||||||||||
| NP80N055MHE-S18-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-np80n055mhes18ay-datasheets-4592.pdf | TO-220-3 | 3 | 16 Weeks | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 1.8W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 13ns | 13 ns | 45 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 120W Tc | TO-220AB | 200A | N-Channel | 3600pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||
| TP0202K-T1-GE3 | Vishay Siliconix | $0.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-tp0202kt1e3-datasheets-6401.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | Unknown | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | Single | 350mW | 1 | Other Transistors | 9 ns | 6ns | 20 ns | 30 ns | -385mA | 20V | SILICON | SWITCHING | 30V | -2V | 350mW Ta | P-Channel | 31pF @ 15V | -2 V | 1.4 Ω @ 500mA, 10V | 3V @ 250μA | 385mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||
| TK4P60DA(T6RSS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 16 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.5A | 30V | 600V | 80W Tc | N-Channel | 490pF @ 25V | 2.2 Ω @ 1.8A, 10V | 4.4V @ 1mA | 3.5A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TK4P60DB(T6RSS-Q) | Toshiba Semiconductor and Storage | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | No | 80W | 1 | 18ns | 8 ns | 3.7A | 30V | 600V | 80W Tc | N-Channel | 540pF @ 25V | 2 Ω @ 1.9A, 10V | 4.4V @ 1mA | 3.7A Ta | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| TPC6010-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | 2.4ns | 3.2 ns | 6.1A | 20V | 60V | 700mW Ta | N-Channel | 830pF @ 10V | 59m Ω @ 3.1A, 10V | 2.3V @ 100μA | 6.1A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPC8A06-H(TE12LQM) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.173, 4.40mm Width) | 8 | No | 8-SOP (5.5x6.0) | 1.8nF | 2.4ns | 3.5 ns | 12A | 20V | 30V | N-Channel | 1800pF @ 10V | 10.1mOhm @ 6A, 10V | 2.3V @ 1mA | 12A Ta | 19nC @ 10V | Schottky Diode (Body) | 10.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TPCC8065-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 2ns | 2.1 ns | 13A | 20V | 30V | 700mW Ta 18W Tc | N-Channel | 1350pF @ 10V | 11.4m Ω @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TPC6012(TE85L,F,M) | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | VS-6 (2.9x2.8) | 630pF | 5ns | 10 ns | 6A | 12V | 20V | 700mW Ta | N-Channel | 630pF @ 10V | 20mOhm @ 3A, 4.5V | 1.2V @ 200μA | 6A Ta | 9nC @ 5V | 20 mΩ | 2.5V 4.5V | ±12V |
