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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQB27N25TM-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqi27n25tuf085-datasheets-5207.pdf&product=onsemiconductor-fqb27n25tmf085-6923985 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 1.31247g | 110mOhm | LIFETIME (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | 245 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 36 ns | 122ns | 60 ns | 81 ns | 25.5A | 30V | SILICON | DRAIN | SWITCHING | 250V | 250V | 417W Tc | 972 mJ | N-Channel | 1800pF @ 25V | 131m Ω @ 25.5A, 10V | 5V @ 250μA | 25.5A Tc | 49nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| NTMFS4962NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2015 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EFC4612R-TR | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2011 | 4-XFBGA | Lead Free | 4 | 20 Weeks | 4 | yes | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | Halogen Free | YES | BOTTOM | BALL | 4 | Dual | 1.6W | 2 | 6A | 12V | SILICON | SWITCHING | 24V | 1.6W Ta | N-Channel | 45m Ω @ 3A, 4.5V | 1.3V @ 1mA | 6A Ta | 7nC @ 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R460CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipa80r460cexksa2-datasheets-9411.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | SINGLE | 1 | 25 ns | 15ns | 10 ns | 72 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 34W Tc | TO-220AB | 10.8A | 0.46Ohm | 470 mJ | N-Channel | 1600pF @ 100V | 460m Ω @ 7.1A, 10V | 3.9V @ 680μA | 5A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPA80R1K4CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r1k4cexksa1-datasheets-7099.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | SINGLE | 1 | 25 ns | 15ns | 12 ns | 72 ns | 2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 31W Tc | TO-220AB | 12A | 170 mJ | N-Channel | 570pF @ 100V | 1.4 Ω @ 2.3A, 10V | 3.9V @ 240μA | 2.8A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NDT03N40ZT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | /files/onsemiconductor-ndt03n40zt3g-datasheets-7103.pdf | TO-261-4, TO-261AA | Lead Free | 13 Weeks | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | 500mA | 400V | 2W Tc | N-Channel | 140pF @ 50V | 3.4 Ω @ 600mA, 10V | 4.5V @ 50μA | 500mA Tc | 6.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1452-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sft1452tlw-datasheets-3452.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 4 Weeks | yes | e6 | Tin/Bismuth (Sn/Bi) | 1 | FET General Purpose Power | 3A | Single | 250V | 1W Ta 26W Tc | 3A | N-Channel | 210pF @ 20V | 2.4 Ω @ 1.5A, 10V | 4.5V @ 1mA | 3A Ta | 4.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NDT02N60ZT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-261-4, TO-261AA | Lead Free | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | 600V | 2W Tc | N-Channel | 170pF @ 25V | 8 Ω @ 700mA, 10V | 4.5V @ 50μA | 300mA Tc | 7.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD60R650CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-ipd60r650ceauma1-datasheets-8104.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 8ns | 11 ns | 58 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 63W Tc | 0.65Ohm | N-Channel | 440pF @ 100V | 650m Ω @ 2.4A, 10V | 3.5V @ 200μA | 7A Tc | 20.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPD60R800CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-ipd60r800ceauma1-datasheets-3307.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | yes | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 7ns | 12 ns | 50 ns | 5.6A | 20V | SILICON | DRAIN | SWITCHING | 48W Tc | 0.8Ohm | 72 mJ | 600V | N-Channel | 373pF @ 100V | 800m Ω @ 2A, 10V | 3.5V @ 170μA | 5.6A Tc | 17.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SFT1443-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sft1443tlw-datasheets-6758.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 4 | yes | unknown | e6 | Tin/Bismuth (Sn/Bi) | 1 | FET General Purpose Power | 8 ns | 10ns | 24 ns | 34 ns | 9A | 20V | Single | 1W Ta 19W Tc | 9A | 100V | N-Channel | 490pF @ 20V | 225m Ω @ 3A, 10V | 2.6V @ 1mA | 9A Ta | 9.8nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPU60R1K5CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/infineontechnologies-ipd60r1k5ceauma1-datasheets-9259.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 343.085929mg | yes | 1 | Single | 1 | R-PSIP-T3 | 8 ns | 7ns | 20 ns | 40 ns | 3.1A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 28W Tc | 5A | 8A | 26 mJ | N-Channel | 200pF @ 100V | 1.5 Ω @ 1.1A, 10V | 3.5V @ 90μA | 3.1A Tc | 9.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SFT1458-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/onsemiconductor-sft1458h-datasheets-7145.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | 1 | 6 ns | 11ns | 60 ns | 12 ns | 1A | 30V | 600V | 1W Ta 38W Tc | N-Channel | 65pF @ 20V | 13 Ω @ 500mA, 10V | 1A Ta | 3.8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA80R1K0CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r1k0cexksa1-datasheets-7044.pdf | TO-220-3 Full Pack | 3 | 3 | yes | SINGLE | 1 | 25 ns | 15ns | 8 ns | 72 ns | 3.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 32W Tc | TO-220AB | 5.7A | 18A | 0.95Ohm | N-Channel | 785pF @ 100V | 950m Ω @ 3.6A, 10V | 3.9V @ 250μA | 3.6A Tc | 31nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD60R1K0CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/infineontechnologies-ipd60r1k0ceauma1-datasheets-5712.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | yes | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 8ns | 13 ns | 60 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 37W Tc | 1Ohm | 46 mJ | N-Channel | 280pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.3A Tc | 13nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPA80R310CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa80r310cexksa2-datasheets-7944.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | SINGLE | 1 | 25 ns | 15ns | 6 ns | 72 ns | 6.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 35W Tc | TO-220AB | 16.7A | 51A | 670 mJ | N-Channel | 2320pF @ 100V | 310m Ω @ 11A, 10V | 3.9V @ 1mA | 6.8A Tc | 91nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||
| IPD60R400CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | /files/infineontechnologies-ips60r400ceakma1-datasheets-2077.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.55mm | Lead Free | 2 | 3.949996g | yes | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 112W | 1 | 150°C | R-PSSO-G2 | 11 ns | 9ns | 8 ns | 56 ns | 14.7A | 20V | SILICON | DRAIN | SWITCHING | 83W Tc | 30A | 0.4Ohm | 600V | N-Channel | 700pF @ 100V | 400m Ω @ 3.8A, 10V | 3.5V @ 300μA | 10.3A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPU60R1K0CEBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r1k0ceauma1-datasheets-5712.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 343.085929mg | yes | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSIP-T3 | 10 ns | 8ns | 13 ns | 60 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 37W Tc | 1Ohm | 46 mJ | N-Channel | 280pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 130μA | 4.3A Tc | 13nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SFT1443-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-sft1443tlh-datasheets-6943.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | 3 | Single | 19W | 1 | 8 ns | 10ns | 24 ns | 34 ns | 9A | 20V | 100V | 1W Ta 19W Tc | N-Channel | 490pF @ 20V | 225m Ω @ 3A, 10V | 2.6V @ 1mA | 9A Ta | 9.8nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPS65R1K5CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips65r1k5ceakma1-datasheets-6978.pdf | TO-251-3 Stub Leads, IPak | Contains Lead | 3 | 6 Weeks | 343.085929mg | yes | EAR99 | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSIP-T3 | 7.7 ns | 5.9ns | 18.2 ns | 33 ns | 3.1A | 20V | 650V | SILICON | DRAIN | SWITCHING | 28W Tc | 8.3A | 26 mJ | N-Channel | 225pF @ 100V | 1.5 Ω @ 1A, 10V | 3.5V @ 100μA | 3.1A Tc | 10.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPD60R2K1CEBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/infineontechnologies-ipd60r2k1cebtma1-datasheets-6982.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3.949996g | 3 | yes | EAR99 | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 7 ns | 7ns | 50 ns | 30 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 22W Tc | 6A | 600V | N-Channel | 140pF @ 100V | 2.1 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.3A Tc | 6.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PHK04P02T,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/nexperiausainc-phk04p02t518-datasheets-6996.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 16 Weeks | 8 | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | GULL WING | 260 | 8 | 30 | 5W | 1 | 2 ns | 4.5ns | 20 ns | 45 ns | 4.66A | 8V | -16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 16V | 5W Tc | MS-012AA | 0.15Ohm | -16V | P-Channel | 528pF @ 12.8V | 120m Ω @ 1A, 4.5V | 600mV @ 1mA | 4.66A Tc | 7.2nC @ 4.5V | 2.5V 10V | ±8V | ||||||||||||||||||||||||||||||||||
| IPA60R800CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd60r800ceauma1-datasheets-3307.pdf | TO-220-3 Full Pack | Lead Free | 3 | 6 Weeks | 2.299997g | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 9 ns | 7ns | 12 ns | 50 ns | 5.6A | 20V | 600V | SILICON | ISOLATED | SWITCHING | 27W Tc | TO-220AB | 0.8Ohm | 72 mJ | 600V | N-Channel | 373pF @ 100V | 800m Ω @ 2A, 10V | 3.5V @ 170μA | 5.6A Tc | 17.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPA50R650CEXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa50r650cexksa2-datasheets-7023.pdf | TO-220-3 Full Pack | Lead Free | 3 | 6 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 6 ns | 5ns | 13 ns | 27 ns | 4.6A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 27.2W Tc | TO-220AB | 6.1A | 19A | 0.65Ohm | 102 mJ | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 4.6A Tc | 15nC @ 10V | 13V | ±20V | |||||||||||||||||||||||||||||||||
| AOW2502 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow298-datasheets-0480.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 3.01nF | 106A | 150V | 6.2W Ta 277W Tc | N-Channel | 3010pF @ 75V | 10.7mOhm @ 20A, 10V | 5.1V @ 250μA | 16A Ta 106A Tc | 60nC @ 10V | 10.7 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMG7702SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmg7702sfg7-datasheets-0641.pdf | 8-PowerVDFN | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 15.8 ns | 27.8ns | 13.6 ns | 29.7 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 890mW Ta | 9.5A | N-Channel | 4310pF @ 15V | 10m Ω @ 13.5A, 10V | 2.5V @ 250μA | 12A Ta | 14.7nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| CPH6354-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-cph6354tlw-datasheets-6092.pdf | SOT-23-6 Thin, TSOT-23-6 | 2.9mm | 900μm | 1.6mm | Lead Free | 15 Weeks | 6 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 6 | Single | 1.6W | 1 | Other Transistors | 5.8 ns | 12ns | 40 ns | 78 ns | 4A | 20V | 60V | 1.6W Ta | 4A | -60V | P-Channel | 600pF @ 20V | 100m Ω @ 2A, 10V | 4A Ta | 14nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMS3012SFG-13 | Diodes Incorporated | $1.78 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dms3012sfg7-datasheets-0270.pdf | 8-PowerVDFN | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 15.8 ns | 27.8ns | 13.6 ns | 29.7 ns | 12A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 890mW Ta | 9.5A | 0.01Ohm | 30V | N-Channel | 4310pF @ 15V | 10m Ω @ 13.5A, 10V | 2.5V @ 250μA | 12A Ta | 14.7nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI8805EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8805edbt2e1-datasheets-6973.pdf | 4-XFBGA | 4 | 15 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 4 | 1 | Single | 500mW | 1 | Other Transistors | 13 ns | 13ns | 17 ns | 25 ns | -3.1A | 5V | SILICON | SWITCHING | 8V | 8V | 500mW Ta | 0.088Ohm | P-Channel | 68m Ω @ 1.5A, 4.5V | 700mV @ 250μA | 10nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||
| BUK98150-55,135 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk9815055135-datasheets-6844.pdf | TO-261-4, TO-261AA | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ESD PROTECTED | 8541.29.00.75 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 8.3W Tc | 2.6A | 30A | 0.15Ohm | 15 mJ | N-Channel | 330pF @ 25V | 150m Ω @ 5A, 5V | 2V @ 1mA | 5.5A Tc | 5V | ±10V |
