Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IRFH7188TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7188trpbf-datasheets-6805.pdf | 8-PowerTDFN | Lead Free | 5 | 6.6mOhm | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 105A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 3.8W Ta 132W Tc | 210A | 493 mJ | N-Channel | 2116pF @ 50V | 6m Ω @ 50A, 10V | 3.9V @ 150μA | 18A Ta 105A Tc | 50nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| CPH3456-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-cph3456tlh-datasheets-6830.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 900μm | 1.6mm | Lead Free | 3 | 3 | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | DUAL | GULL WING | 3 | Single | 1W | 1 | FET General Purpose Power | 6.2 ns | 19ns | 28 ns | 30 ns | 3.5A | 12V | SILICON | SWITCHING | 1W Ta | 20V | N-Channel | 260pF @ 10V | 71m Ω @ 1.5A, 4.5V | 3.5A Ta | 2.8nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| CPH3355-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-cph3355tlh-datasheets-6858.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 900μm | 1.6mm | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 1 day ago) | yes | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | DUAL | GULL WING | 3 | Single | 1 | 4.5 ns | 4.2ns | 10.6 ns | 20 ns | 2.5A | 20V | SILICON | 30V | 1W Ta | 0.156Ohm | P-Channel | 172pF @ 10V | 156m Ω @ 1A, 10V | 2.6V @ 1mA | 2.5A Ta | 3.9nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMG3413L-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/diodesincorporated-dmg3413l7-datasheets-6875.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 5 Weeks | 7.994566mg | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 40 | 1 | Other Transistors | 9.7 ns | 17.7ns | 64.2 ns | 268.8 ns | 3A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 700mW Ta | 2.5A | 0.095Ohm | 20V | P-Channel | 857pF @ 10V | 95m Ω @ 3A, 4.5V | 1.3V @ 250μA | 3A Ta | 9nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| CPH3351-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-cph3351tlw-datasheets-0875.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 900μm | 1.6mm | Lead Free | 3 | 3 | ACTIVE, NOT REC (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | DUAL | GULL WING | 260 | 3 | Single | NOT SPECIFIED | 1W | 1 | Other Transistors | 5.1 ns | 5.4ns | 19 ns | 34 ns | 1.8A | 20V | SILICON | 1W Ta | 0.25Ohm | 60V | P-Channel | 262pF @ 20V | 250m Ω @ 1A, 10V | 1.8A Ta | 6nC @ 10V | |||||||||||||||||||||||||||||||||||||||||
| MCH3383-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-mch3383tlw-datasheets-3406.pdf | 3-SMD, Flat Lead | 2mm | 850μm | 1.6mm | Lead Free | 3 | 3 | ACTIVE, NOT REC (Last Updated: 6 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | DUAL | 3 | Single | 1W | 1 | Other Transistors | 9.9 ns | 49ns | 65 ns | 109 ns | 3.5A | 5V | SILICON | SWITCHING | 1W Ta | 0.069Ohm | 12V | P-Channel | 1010pF @ 6V | 69m Ω @ 1.5A, 2.5V | 800mV @ 1mA | 3.5A Ta | 6.2nC @ 2.5V | 0.9V 2.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||
| 5LN01C-TB-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-5ln01ctbe-datasheets-6732.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.5mm | Lead Free | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | Tin | e6 | 3 | Single | 250mW | 1 | FET General Purpose Powers | 18 ns | 42ns | 105 ns | 190 ns | 100mA | 10V | 250mW Ta | 50V | N-Channel | 6.6pF @ 10V | 7.8 Ω @ 50mA, 4V | 100mA Ta | 1.57nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| 3LN01S-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | /files/onsemiconductor-3ln01sstlh-datasheets-4210.pdf | TO-236-3, SC-59, SOT-23-3 | 1.6mm | 750μm | 800μm | Lead Free | 3 | yes | EAR99 | Tin | No | e6 | 3 | Single | 150mW | FET General Purpose Powers | 19 ns | 65ns | 120 ns | 155 ns | 150mA | 10V | 30V | 150mW Ta | 0.15A | N-Channel | 7pF @ 10V | 3.7 Ω @ 80mA, 4V | 150mA Ta | 1.58nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7171MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7171mtrpbf-datasheets-6751.pdf | DirectFET™ Isometric MN | Lead Free | 6.5mOhm | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 93A | 100V | 2.8W Ta 104W Tc | N-Channel | 2160pF @ 50V | 6.5m Ω @ 56A, 10V | 3.6V @ 150μA | 15A Ta 93A Tc | 54nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH7191TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FASTIRFET™, HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfh7191trpbf-datasheets-6762.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 8mOhm | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 80A | 100V | 3.6W Ta 104W Tc | N-Channel | 1685pF @ 50V | 8m Ω @ 48A, 10V | 3.6V @ 100μA | 15A Ta 80A Tc | 39nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5LN01SP-AC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-5ln01spac-datasheets-6768.pdf | SC-72 | 4mm | 3mm | 2.2mm | Lead Free | 3 | yes | EAR99 | No | e2 | Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni) | NO | 3 | Single | 250mW | FET General Purpose Power | 18 ns | 42ns | 105 ns | 190 ns | 100mA | 10V | 250mW Ta | 0.1A | 50V | N-Channel | 6.6pF @ 10V | 7.8 Ω @ 50mA, 4V | 1.3V @ 100μA | 100mA Ta | 1.57nC @ 10V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOW290 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aow298-datasheets-0480.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 7.18nF | 140A | 100V | 1.9W Ta 500W Tc | N-Channel | 7180pF @ 50V | 3.2mOhm @ 20A, 10V | 4.1V @ 250μA | 17.5A Ta 140A Tc | 126nC @ 10V | 3.2 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK16A55D(STA4,Q,M) | Toshiba Semiconductor and Storage | $2.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSVII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 16 Weeks | 3 | No | 50W | TO-220SIS | 2.6nF | 50ns | 25 ns | 16A | 30V | 550V | N-Channel | 2600pF @ 25V | 330mOhm @ 8A, 10V | 4V @ 1mA | 16A Ta | 45nC @ 10V | 330 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCC8067-H,LQ(S | Toshiba Semiconductor and Storage | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 12 Weeks | 8 | No | 2.1ns | 2 ns | 9A | 20V | 30V | 700mW Ta 15W Tc | N-Channel | 690pF @ 10V | 25m Ω @ 4.5A, 10V | 2.3V @ 100μA | 9A Ta | 9.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110N04-03-E3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum110n0403e3-datasheets-5402.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 2 | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 437.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 170ns | 110 ns | 55 ns | 110A | 20V | 40V | SILICON | SWITCHING | 4V | 3.75W Ta 375W Tc | 60 ns | 440A | 0.0028Ohm | 40V | N-Channel | 8250pF @ 25V | 4 V | 2.8m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NP180N04TUJ-E1-AY | Renesas Electronics America | $11.00 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np180n04tuje1ay-datasheets-5081.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 16 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | 7 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 348W Tc | 720A | 0.0015Ohm | N-Channel | 14250pF @ 25V | 1.5m Ω @ 90A, 10V | 4V @ 250μA | 180A Tc | 230nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NP80N04PLG-E1B-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np80n04plge1bay-datasheets-0040.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.95 | SINGLE | GULL WING | 3 | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 18ns | 8 ns | 74 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 115W Tc | 0.0045Ohm | N-Channel | 6900pF @ 25V | 4.5m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NP100P04PLG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np100p04plge1ay-datasheets-4772.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | EAR99 | No | e3 | MATTE TIN | SINGLE | GULL WING | 3 | 1.8W | 1 | Other Transistors | R-PSSO-G2 | 38 ns | 30ns | 100 ns | 300 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.8W Ta 200W Tc | 300A | 550 mJ | P-Channel | 15100pF @ 10V | 3.7m Ω @ 50A, 10V | 2.5V @ 1mA | 100A Tc | 320nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| 2SK3943-ZP-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-2sk3943zpe1ay-datasheets-4642.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | EAR99 | NOT SPECIFIED | 3 | NOT SPECIFIED | 82A | 40V | 1.5W Ta 104W Tc | N-Channel | 5800pF @ 10V | 3.5m Ω @ 41A, 10V | 82A Tc | 93nC @ 10V | 5.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1423-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | /files/onsemiconductor-sft1423tle-datasheets-4801.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 3 | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 3 | Single | 1W | 1 | FET General Purpose Powers | 7.4 ns | 8.8ns | 27 ns | 42 ns | 2A | 20V | 500V | 1W Ta 20W Tc | 2A | N-Channel | 175pF @ 30V | 4.9 Ω @ 1A, 10V | 2A Ta | 8.7nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NP50P03YDG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-np50p03ydge1ay-datasheets-4748.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 16 Weeks | 8 | EAR99 | No | DUAL | 8 | 1W | 1 | Other Transistors | R-PDSO-F5 | 9 ns | 7ns | 180 ns | 230 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1W Ta 102W Tc | P-Channel | 3500pF @ 25V | 8.4m Ω @ 25A, 10V | 2.5V @ 250μA | 50A Tc | 96nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NP36P06KDG-E1-AY | Renesas Electronics America | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np36p06kdge1ay-datasheets-4681.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | EAR99 | No | 8541.29.00.95 | SINGLE | GULL WING | 3 | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 11ns | 110 ns | 210 ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.8W Ta 56W Tc | 108A | 0.0375Ohm | 54 mJ | P-Channel | 3100pF @ 10V | 29.5m Ω @ 18A, 10V | 2.5V @ 1mA | 36A Tc | 54nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| TK50E06K3(S1SS-Q) | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Through Hole | Through Hole | Tube | 1 (Unlimited) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP160N055TUJ-E1-AY | Renesas Electronics America | $3.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np160n055tuje1ay-datasheets-4622.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | EAR99 | No | SINGLE | GULL WING | 7 | 1.8W | 1 | R-PSSO-G6 | 40 ns | 20ns | 10 ns | 90 ns | 160A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 1.8W Ta 250W Tc | 640A | 0.003Ohm | N-Channel | 10350pF @ 25V | 3m Ω @ 80A, 10V | 4V @ 250μA | 160A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| NP74N04YUG-E1-AY | Renesas Electronics America | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np74n04yuge1ay-datasheets-4657.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 26 Weeks | 8 | EAR99 | No | DUAL | 8 | 1W | 1 | FET General Purpose Power | R-PDSO-F5 | 26 ns | 10ns | 6 ns | 62 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1W Ta 120W Tc | 0.0055Ohm | 400 pF | N-Channel | 5430pF @ 25V | 5.5m Ω @ 37.5A, 10V | 4V @ 250μA | 75A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TPC6011(TE85L,F,M) | Toshiba Semiconductor and Storage | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | 12 Weeks | 6 | No | 2.2W | 1 | VS-6 (2.9x2.8) | 640pF | 5.8ns | 8 ns | 6A | 20V | 30V | 700mW Ta | N-Channel | 640pF @ 10V | 20mOhm @ 3A, 10V | 2.5V @ 1mA | 6A Ta | 14nC @ 10V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NP75P04YLG-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/renesaselectronicsamerica-np75p04ylge1ay-datasheets-4711.pdf | 8-SMD, Flat Lead Exposed Pad | 5 | 26 Weeks | 8 | EAR99 | DUAL | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-F5 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1W Ta 138W Tc | 0.014Ohm | 450 pF | P-Channel | 4800pF @ 25V | 9.7m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 140nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPCC8066-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-PowerVDFN | 5 | 12 Weeks | 8 | EAR99 | No | DUAL | FLAT | 1 | S-PDSO-F5 | 2.1ns | 2.3 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 700mW Ta 17W Tc | 0.019Ohm | N-Channel | 1100pF @ 10V | 15m Ω @ 5.5A, 10V | 2.3V @ 100μA | 11A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NP36P04SDG-E1-AY | Renesas Electronics America | $2.72 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-np36p04sdge1ay-datasheets-4627.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | No | SINGLE | GULL WING | 3 | 1.2W | 1 | Other Transistors | R-PSSO-G2 | 8 ns | 10ns | 140 ns | 250 ns | 36A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 1.2W Ta 56W Tc | TO-252AA | 0.0235Ohm | 67 mJ | P-Channel | 2800pF @ 10V | 17m Ω @ 18A, 10V | 2.5V @ 250μA | 36A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| 2SJ687-ZK-E1-AY | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/renesaselectronicsamerica-2sj687zke1ay-datasheets-4588.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | EAR99 | Tin | No | e3 | SINGLE | GULL WING | 3 | 1W | 1 | Other Transistors | R-PSSO-G2 | 36 ns | 220ns | 310 ns | 270 ns | 20A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 20V | 20V | 1W Ta 36W Tc | TO-252AA | 0.02A | 0.02Ohm | P-Channel | 4400pF @ 10V | 7m Ω @ 10A, 4.5V | 20A Tc | 57nC @ 4.5V | 2.5V 4.5V | ±12V |
