Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Forward Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SI4346DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4346dyt1e3-datasheets-9282.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 13 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.31W | 1 | 9 ns | 11ns | 7 ns | 40 ns | 5.9A | 12V | SILICON | SWITCHING | 2V | 1.31W Ta | 0.023Ohm | 30V | N-Channel | 23m Ω @ 8A, 10V | 2V @ 250μA | 5.9A Ta | 10nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||
| SI4862DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4862dyt1e3-datasheets-3887.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 32 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 42 ns | 38ns | 50 ns | 120 ns | 17A | 8V | SILICON | SWITCHING | 1.6W Ta | 0.0033Ohm | 16V | N-Channel | 3.3m Ω @ 25A, 4.5V | 600mV @ 250μA (Min) | 17A Ta | 70nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SI4892DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4892dyt1e3-datasheets-6394.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 10 ns | 11ns | 10 ns | 24 ns | 8.8A | 20V | SILICON | 1.6W Ta | 0.012Ohm | 30V | N-Channel | 12m Ω @ 12.4A, 10V | 800mV @ 250μA (Min) | 8.8A Ta | 10.5nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI5445BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5445bdct1e3-datasheets-8498.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 33MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Other Transistors | 12 ns | 22ns | 50 ns | 75 ns | -71A | 8V | SILICON | 1.3W Ta | 5.2A | -8V | P-Channel | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 21nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI4880DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4880dyt1e3-datasheets-6423.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8.5mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | R-PDSO-G8 | 14 ns | 9ns | 30 ns | 46 ns | 13A | 25V | SILICON | SWITCHING | 2.5W Ta | 50A | 30V | N-Channel | 8.5m Ω @ 13A, 10V | 1.8V @ 250μA | 25nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||
| SI4880DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4880dyt1e3-datasheets-6423.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | EAR99 | No | DUAL | GULL WING | Single | 1 | FET General Purpose Powers | R-PDSO-G8 | 14 ns | 9ns | 30 ns | 46 ns | 13A | 25V | SILICON | SWITCHING | 2.5W Ta | 50A | 0.0085Ohm | 30V | N-Channel | 8.5m Ω @ 13A, 10V | 1.8V @ 250μA | 25nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SI4823DY-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4823dyt1ge3-datasheets-0720.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 18 ns | 40ns | 40 ns | 18 ns | 3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 1.7W Ta 2.8W Tc | -20V | P-Channel | 660pF @ 10V | 108m Ω @ 3.3A, 4.5V | 1.5V @ 250μA | 4.1A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||
| SI4888DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4888dyt1ge3-datasheets-6431.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.6W | 1 | FET General Purpose Power | 14 ns | 10ns | 20 ns | 44 ns | 11A | 20V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 0.007Ohm | N-Channel | 7m Ω @ 16A, 10V | 1.6V @ 250μA | 11A Ta | 24nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI6473DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6473dqt1e3-datasheets-6434.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 12.5MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 80mW | 1 | Not Qualified | 42 ns | 33ns | 33 ns | 220 ns | 6.2A | 8V | SILICON | 20V | 20V | 1.08W Ta | P-Channel | 12.5m Ω @ 9.5A, 4.5V | 450mV @ 250μA (Min) | 6.2A Ta | 70nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI5482DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5482dut1e3-datasheets-8529.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 8 | 1 | Single | PowerPAK® ChipFet Single | 1.61nF | 5 ns | 10ns | 10 ns | 35 ns | 12A | 12V | 30V | 3.1W Ta 31W Tc | 15mOhm | N-Channel | 1610pF @ 15V | 15mOhm @ 7.4A, 10V | 2V @ 250μA | 12A Tc | 51nC @ 10V | 15 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SI4453DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4453dyt1ge3-datasheets-6438.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 8-SO | 110 ns | 235ns | 285 ns | 410 ns | 10A | 8V | 12V | 1.5W Ta | 6.5mOhm | -12V | P-Channel | 6.5mOhm @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 165nC @ 5V | 6.5 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| SI4850EY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4850eyt1e3-datasheets-8689.pdf | 60V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 506.605978mg | 8 | 1 | Single | 1.7W | 1 | 8-SO | 800mV | 10 ns | 10ns | 10 ns | 25 ns | 6A | 20V | 60V | 1.7W Ta | 22mOhm | 60V | N-Channel | 22mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 27nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI6469DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6469dqt1ge3-datasheets-0848.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Not Qualified | 30ns | 30 ns | 85 ns | 6A | 8V | SILICON | 1.5W Ta | 6A | 30A | 0.031Ohm | 8V | P-Channel | 28m Ω @ 6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI4886DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4886dyt1e3-datasheets-6381.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 2.95W | 1 | FET General Purpose Powers | 14 ns | 5ns | 18 ns | 42 ns | 9.5A | 20V | SILICON | 1.56W Ta | 0.01Ohm | 30V | N-Channel | 10m Ω @ 13A, 10V | 800mV @ 250μA (Min) | 9.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4840DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4840dyt1e3-datasheets-8414.pdf | 8-SOIC (0.154, 3.90mm Width) | 186.993455mg | 8 | 1 | Single | 8-SO | 10A | 20V | 40V | 1.56W Ta | 9mOhm | 40V | N-Channel | 3 V | 9mOhm @ 14A, 10V | 3V @ 250μA | 10A Ta | 28nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5220TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5220trpbf-datasheets-6361.pdf | 8-VQFN Exposed Pad | 5 | 8 | EAR99 | No | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 7.2 ns | 4.7ns | 3.4 ns | 14 ns | 3.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 8.3W Tc | 20A | 47A | 0.0999Ohm | 290 mJ | 200V | N-Channel | 1380pF @ 50V | 99.9m Ω @ 5.8A, 10V | 5V @ 100μA | 3.8A Ta 20A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI4684DY-T1-E3 | Vishay Siliconix | $10.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4684dyt1ge3-datasheets-6354.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 2.5W | 1 | 8-SO | 2.08nF | 12 ns | 12ns | 11 ns | 45 ns | 12A | 12V | 30V | 2.5W Ta 4.45W Tc | 9.4mOhm | N-Channel | 2080pF @ 15V | 9.4mOhm @ 16A, 10V | 1.5V @ 250μA | 16A Tc | 45nC @ 10V | 9.4 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI3447BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3447bdvt1e3-datasheets-8101.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Unknown | 6 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.1W | 1 | Other Transistors | 20 ns | 46ns | 62 ns | 62 ns | -4.5A | 8V | SILICON | SWITCHING | 1V | 1.1W Ta | 0.04Ohm | 12V | P-Channel | 1 V | 40m Ω @ 6A, 4.5V | 1V @ 250μA | 4.5A Ta | 14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| SI4833ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4833adyt1e3-datasheets-8435.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 7 ns | 11ns | 8 ns | 19 ns | -4.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.93W Ta 2.75W Tc | 20A | 0.072Ohm | -30V | P-Channel | 750pF @ 15V | 72m Ω @ 3.6A, 10V | 2.5V @ 250μA | 4.6A Tc | 15nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI5402DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402dct1ge3-datasheets-6376.pdf | 8-SMD, Flat Lead | 8 | No | Single | 2.5W | 1206-8 ChipFET™ | 10 ns | 10ns | 10 ns | 25 ns | 4.9A | 20V | 30V | 1.3W Ta | 35mOhm | 30V | N-Channel | 35mOhm @ 4.9A, 10V | 1V @ 250μA (Min) | 4.9A Ta | 20nC @ 10V | 35 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI4354DY-T1-E3 | Vishay Siliconix | $14.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4354dyt1ge3-datasheets-6331.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | 8 ns | 10ns | 9 ns | 28 ns | 9.5A | 12V | SILICON | SWITCHING | 2.5W Ta | 30V | N-Channel | 16.5m Ω @ 9.5A, 10V | 1.6V @ 250μA | 9.5A Ta | 10.5nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI4886DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4886dyt1e3-datasheets-6381.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 14 ns | 5ns | 5 ns | 42 ns | 13A | 20V | SILICON | SWITCHING | 30V | 30V | 1.56W Ta | 9.5A | N-Channel | 800 mV | 10m Ω @ 13A, 10V | 800mV @ 250μA (Min) | 9.5A Ta | 20nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| SI4646DY-T1-GE3 | Vishay Siliconix | $4.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4646dyt1e3-datasheets-6335.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 1 | 8-SO | 1.79nF | 23 ns | 13ns | 12 ns | 29 ns | 12A | 20V | 30V | 3W Ta 6.25W Tc | 11.5mOhm | 30V | N-Channel | 1790pF @ 15V | 11.5mOhm @ 10A, 10V | 2.5V @ 1mA | 12A Tc | 45nC @ 10V | 11.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI5402DC-T1-E3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402dct1ge3-datasheets-6376.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | Single | 1.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 25 ns | 4.9A | 20V | SILICON | 1.3W Ta | 0.035Ohm | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4858DY-T1-GE3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4858dyt1ge3-datasheets-6391.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1 | FET General Purpose Power | 21 ns | 10ns | 27 ns | 83 ns | 13A | 20V | SILICON | SWITCHING | 1.6W Ta | 0.00525Ohm | 30V | N-Channel | 5.25m Ω @ 20A, 10V | 1V @ 250μA (Min) | 13A Ta | 40nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4892DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4892dyt1e3-datasheets-6394.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 12mOhm | 8 | No | Single | 1.6W | 1 | 8-SO | 10 ns | 11ns | 11 ns | 24 ns | 8.8A | 20V | 30V | 1.6W Ta | 12mOhm | 30V | N-Channel | 12mOhm @ 12.4A, 10V | 800mV @ 250μA (Min) | 8.8A Ta | 10.5nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI5441DC-T1-E3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5441dct1e3-datasheets-6398.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Not Qualified | 35ns | 35 ns | 65 ns | 3.9A | 12V | SILICON | 20V | 1.3W Ta | 0.055Ohm | -20V | P-Channel | 55m Ω @ 3.9A, 4.5V | 1.4V @ 250μA | 3.9A Ta | 22nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI4860DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4860dyt1ge3-datasheets-6401.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.6W | 1 | FET General Purpose Powers | 18 ns | 12ns | 19 ns | 46 ns | 11A | 20V | SILICON | SWITCHING | 1.6W Ta | 1.1A | 30V | N-Channel | 8m Ω @ 16A, 10V | 1V @ 250μA (Min) | 11A Ta | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SI4876DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4876dyt1e3-datasheets-8417.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | 40 ns | 30ns | 70 ns | 175 ns | 14A | 12V | SILICON | SWITCHING | 1.6W Ta | 0.005Ohm | 20V | N-Channel | 5m Ω @ 21A, 4.5V | 600mV @ 250μA (Min) | 14A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| SI3805DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3805dvt1e3-datasheets-6320.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 13 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.1W | 1 | Other Transistors | 18 ns | 40ns | 40 ns | 18 ns | -3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.1W Ta 1.4W Tc | 3A | 0.084Ohm | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3A, 10V | 1.5V @ 250μA | 3.3A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V |
