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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6201PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6201trpbf-datasheets-6209.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No SVHC | 8 | EAR99 | Tin | No | DUAL | GULL WING | 2.5W | 1 | FET General Purpose Power | 29 ns | 100ns | 265 ns | 320 ns | 27A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.1V | 2.5W Ta | 120 ns | 0.00245Ohm | 20V | N-Channel | 8555pF @ 16V | 2.45m Ω @ 27A, 4.5V | 1.1V @ 100μA | 27A Ta | 195nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| IRLML2502GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irlml2502gtrpbf-datasheets-0567.pdf | TO-236-3, SC-59, SOT-23-3 | 3.0226mm | 1.016mm | 1.397mm | Lead Free | 3 | 10 Weeks | 45MOhm | 3 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.25W | 1 | FET General Purpose Power | 7.5 ns | 10ns | 26 ns | 54 ns | 4.2A | 12V | SILICON | SWITCHING | 1.25W Ta | 20V | N-Channel | 740pF @ 15V | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 4.2A Ta | 12nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| IRLH5034TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irlh5034trpbf-datasheets-3753.pdf | 8-PowerVDFN | 5mm | 810μm | 5.1562mm | No SVHC | 8 | No | 3.6W | 156W | 1 | 8-PQFN (5x6) | 4.73nF | 21 ns | 54ns | 21 ns | 31 ns | 100A | 16V | 40V | 1V | 38 ns | 2.7mOhm | 40V | N-Channel | 4730pF @ 25V | 1 V | 2.4mOhm @ 50A, 10V | 2.5V @ 150μA | 29A Ta 100A Tc | 82nC @ 10V | 2.4 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| IRFH5106TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5106tr2pbf-datasheets-0464.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 40 | 114W | 1 | FET General Purpose Power | R-PDSO-N5 | 8.1 ns | 13ns | 9.5 ns | 23 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 3.6W Ta 114W Tc | 400A | 0.0056Ohm | 96 mJ | 60V | N-Channel | 3090pF @ 25V | 2 V | 5.6m Ω @ 50A, 10V | 4V @ 250μA | 21A Ta 100A Tc | 75nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFH7934TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 2 (1 Year) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7934trpbf-datasheets-9817.pdf | 8-PowerTDFN | 5.2324mm | 1.1684mm | 6.1468mm | Lead Free | No SVHC | 3.5MOhm | 8 | No | 3.1W | Single | 3.1W | 1 | 8-PQFN (5x6) | 3.1nF | 12 ns | 16ns | 7.5 ns | 14 ns | 24A | 20V | 30V | 1.8V | 30 ns | 3.5mOhm | 30V | N-Channel | 3100pF @ 15V | 1.8 V | 3.5mOhm @ 24A, 10V | 2.35V @ 50μA | 24A Ta 76A Tc | 30nC @ 4.5V | 3.5 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRFH5210TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | /files/infineontechnologies-irfh5210trpbf-datasheets-7209.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | No SVHC | 14.9MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 2.57nF | 7.2 ns | 9.7ns | 6.5 ns | 21 ns | 100A | 20V | 100V | 2V | 44 ns | 14.9mOhm | 100V | N-Channel | 2570pF @ 25V | 2 V | 14.9mOhm @ 33A, 10V | 4V @ 100μA | 10A Ta 55A Tc | 59nC @ 10V | 14.9 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRFH5007TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5007trpbf-datasheets-6033.pdf | 8-PowerTDFN | 6.1468mm | 990.6μm | 5.15mm | Lead Free | No SVHC | 5.9MOhm | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 4.29nF | 10 ns | 14ns | 11 ns | 30 ns | 100A | 20V | 75V | 4V | 47 ns | 5.9mOhm | 75V | N-Channel | 4290pF @ 25V | 4 V | 5.9mOhm @ 50A, 10V | 4V @ 150μA | 17A Ta 100A Tc | 98nC @ 10V | 5.9 mΩ | |||||||||||||||||||||||||||||||||||||||
| IRFH5006TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/infineontechnologies-irfh5006trpbf-datasheets-9786.pdf | 8-PowerTDFN | 6.1468mm | 990.6μm | 5.15mm | No SVHC | 8 | No | 3.6W | Single | 3.6W | 1 | 8-PQFN (5x6) | 4.175nF | 9.6 ns | 13ns | 12 ns | 30 ns | 100A | 20V | 60V | 4V | 42 ns | 4.1mOhm | 60V | N-Channel | 4175pF @ 30V | 4 V | 4.1mOhm @ 50A, 10V | 4V @ 150μA | 21A Ta 100A Tc | 100nC @ 10V | 4.1 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5106TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5106tr2pbf-datasheets-0464.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 114W | 1 | 8-PQFN (5x6) | 2.46nF | 8.1 ns | 13ns | 9.5 ns | 23 ns | 100A | 20V | 60V | 4V | 42 ns | 5.6mOhm | 60V | N-Channel | 3090pF @ 25V | 4 V | 5.6mOhm @ 50A, 10V | 4V @ 250μA | 21A Ta 100A Tc | 75nC @ 10V | 4.3 mΩ | |||||||||||||||||||||||||||||||||||||||||
| IRFH5110TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh5110trpbf-datasheets-0650.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | No SVHC | 8 | No | 3.6W | Single | 114W | 1 | 8-PQFN (5x6) | 3.152nF | 7.8 ns | 9.6ns | 6.4 ns | 22 ns | 63A | 20V | 100V | 4V | 51 ns | 12.4mOhm | 100V | N-Channel | 3152pF @ 25V | 4 V | 12.4mOhm @ 37A, 10V | 4V @ 100μA | 11A Ta 63A Tc | 72nC @ 10V | 12.4 mΩ | |||||||||||||||||||||||||||||||||||||||||
| SI6465DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6465dqt1ge3-datasheets-6474.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Not Qualified | 30 ns | 60ns | 60 ns | 210 ns | 8.8A | 8V | SILICON | 1.5W Ta | 30A | -8V | P-Channel | 12m Ω @ 8.8A, 4.5V | 450mV @ 250μA (Min) | 8.8A Ta | 80nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI7447ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7447adpt1e3-datasheets-6636.pdf | PowerPAK® 1212-8 | 5 | 8 | No | DUAL | C BEND | Single | 5.4W | 1 | R-PDSO-C5 | 20 ns | 25ns | 98 ns | 82 ns | 21.5A | 25V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83.3W Tc | 35A | 60A | 0.0065Ohm | 30V | P-Channel | 4650pF @ 15V | 6.5m Ω @ 24A, 10V | 3V @ 250μA | 35A Tc | 150nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| SI7446BDP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7446bdpt1ge3-datasheets-6615.pdf | PowerPAK® SO-8 | Lead Free | 8 | Single | 1.9W | 1 | PowerPAK® SO-8 | 3.076nF | 16ns | 16 ns | 120 ns | 12A | 20V | 30V | 1.9W Ta | 7.5mOhm | 30V | N-Channel | 3076pF @ 15V | 7.5mOhm @ 19A, 10V | 3V @ 250μA | 12A Ta | 33nC @ 5V | 7.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI5463EDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5463edct1e3-datasheets-8486.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 62mOhm | 8 | 1 | Single | 1206-8 ChipFET™ | 1.85 μs | 3.2μs | 3.2 μs | 1.9 μs | -51A | 12V | 20V | 1.25W Ta | 62mOhm | -20V | P-Channel | 62mOhm @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.8A Ta | 15nC @ 4.5V | 62 mΩ | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| SI6443DQ-T1-E3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6443dqt1e3-datasheets-7408.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 12MOhm | 8 | Single | 1.5W | 1 | 8-TSSOP | 21ns | 68 ns | 115 ns | 7.3A | 20V | 30V | 1.05W Ta | 12mOhm | 30V | P-Channel | 12mOhm @ 8.8A, 10V | 3V @ 250μA | 7.3A Ta | 60nC @ 5V | 12 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4453DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4453dyt1ge3-datasheets-6438.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | Single | 1.5W | 1 | 8-SO | 110 ns | 235ns | 235 ns | 410 ns | 10A | 8V | 12V | 1.5W Ta | 6.5mOhm | -12V | P-Channel | 6.5mOhm @ 14A, 4.5V | 900mV @ 600μA | 10A Ta | 165nC @ 5V | 6.5 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SI4654DY-T1-E3 | Vishay Siliconix | $13.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4654dyt1e3-datasheets-7077.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 30 ns | 10ns | 10 ns | 50 ns | 18.6A | 16V | SILICON | SWITCHING | 2.5W Ta 5.9W Tc | 0.004Ohm | 25V | N-Channel | 3770pF @ 15V | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 28.6A Tc | 100nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||
| SI7601DN-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -50°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7601dnt1ge3-datasheets-0272.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 8 | 1 | Single | 3.8W | 1 | PowerPAK® 1212-8 | 1.87nF | 18 ns | 112ns | 80 ns | 53 ns | 11.5A | 12V | 20V | 3.8W Ta 52W Tc | 19mOhm | P-Channel | 1870pF @ 10V | 19.2mOhm @ 11A, 4.5V | 1.6V @ 250μA | 16A Tc | 27nC @ 5V | 19.2 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| SI4829DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 45ns | 10 ns | 15 ns | 2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI4324DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4324dyt1ge3-datasheets-6256.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 3.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 3.5W | 1 | FET General Purpose Power | 30 ns | 135ns | 13 ns | 30 ns | 24A | 20V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 36A | 70A | 30V | N-Channel | 3510pF @ 15V | 3.2m Ω @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7457DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7457dpt1e3-datasheets-6639.pdf | PowerPAK® SO-8 | 5 | 506.605978mg | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | R-PDSO-C5 | 60 ns | 7.9A | 20V | SILICON | DRAIN | 100V | 5.2W Ta 83.3W Tc | 28A | 35A | 0.042Ohm | 80 mJ | -100V | P-Channel | 5230pF @ 50V | 42m Ω @ 7.9A, 10V | 4V @ 250μA | 28A Tc | 160nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI6413DQ-T1-E3 | Vishay Siliconix | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6413dqt1ge3-datasheets-4786.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 157.991892mg | 10mOhm | 8 | 1 | Single | 8-TSSOP | 55 ns | 120ns | 120 ns | 305 ns | 7.2A | 8V | 20V | 1.05W Ta | 10mOhm | P-Channel | 10mOhm @ 8.8A, 4.5V | 800mV @ 400μA | 7.2A Ta | 105nC @ 5V | 10 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||
| SI7668ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7668adpt1e3-datasheets-6674.pdf | PowerPAK® SO-8 | 5.15mm | 1.04mm | 6.15mm | 5 | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 33 ns | 33ns | 14 ns | 56 ns | 31A | 12V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 40A | 70A | 0.003Ohm | 30V | N-Channel | 8820pF @ 15V | 3m Ω @ 25A, 10V | 1.8V @ 250μA | 40A Tc | 170nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||
| SI7674DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7674dpt1ge3-datasheets-6654.pdf | PowerPAK® SO-8 | Single | 5.4W | PowerPAK® SO-8 | 5.91nF | 210ns | 9 ns | 26 ns | 40A | 20V | 30V | 5.4W Ta 83W Tc | 3.3mOhm | 30V | N-Channel | 5910pF @ 15V | 3.3mOhm @ 20A, 10V | 3V @ 250μA | 40A Tc | 90nC @ 10V | 3.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7445DP-T1-E3 | Vishay Siliconix | $2.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7445dpt1ge3-datasheets-6617.pdf | PowerPAK® 1212-8 | 4.9mm | 1.04mm | 5.0038mm | Lead Free | 506.605978mg | No SVHC | 8 | 1 | Single | 1.9W | 1 | PowerPAK® 1212-8 | 40 ns | 45ns | 45 ns | 400 ns | -19A | 8V | -20V | 20V | -1V | 1.9W Ta | 7.7mOhm | P-Channel | 7.7mOhm @ 19A, 4.5V | 1V @ 250μA | 12A Ta | 140nC @ 5V | 7.7 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||
| SI7664DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7664dpt1ge3-datasheets-6652.pdf | PowerPAK® SO-8 | 3.1mOhm | Single | 5.4W | PowerPAK® SO-8 | 7.77nF | 103ns | 9 ns | 41 ns | 40A | 12V | 30V | 5.4W Ta 83W Tc | 3.1mOhm | 30V | N-Channel | 7770pF @ 15V | 3.1mOhm @ 20A, 10V | 1.8V @ 250μA | 40A Tc | 125nC @ 10V | 3.1 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI7491DP-T1-GE3 | Vishay Siliconix | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7491dpt1e3-datasheets-6165.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 8.5mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | Single | 30 | 5W | 1 | Other Transistors | R-XDSO-C5 | 150 ns | 190ns | 90 ns | 120 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | -3V | 1.8W Ta | 11A | 50A | 30V | P-Channel | -3 V | 8.5m Ω @ 18A, 10V | 3V @ 250μA | 11A Ta | 85nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI7668ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7668adpt1e3-datasheets-6674.pdf | PowerPAK® SO-8 | 5.15mm | 1.04mm | 6.15mm | 5 | 506.605978mg | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 33 ns | 33ns | 14 ns | 56 ns | 31A | 12V | SILICON | SWITCHING | 5.4W Ta 83W Tc | 40A | 70A | 0.003Ohm | 30V | N-Channel | 8820pF @ 15V | 3m Ω @ 25A, 10V | 1.8V @ 250μA | 40A Tc | 170nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||
| SI7440DP-T1-GE3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7440dpt1ge3-datasheets-6684.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | FET General Purpose Powers | Not Qualified | R-XDSO-C5 | 18 ns | 41 ns | 75 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0065Ohm | 30V | N-Channel | 6.5m Ω @ 21A, 10V | 3V @ 250μA | 12A Ta | 35nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SI7495DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7495dpt1e3-datasheets-6648.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 6.5mOhm | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | Other Transistors | 100 ns | 200ns | 230 ns | 350 ns | 13A | 8V | 12V | 1.8W Ta | -12V | P-Channel | 6.5m Ω @ 21A, 4.5V | 900mV @ 1mA | 13A Ta | 140nC @ 5V | 1.8V 4.5V | ±8V |
