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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI2341DS-T1-E3 | Vishay Siliconix | $0.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2341dst1e3-datasheets-6100.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 1.437803g | 3 | 1 | Single | SOT-23-3 (TO-236) | 400pF | 7 ns | 15ns | 15 ns | 20 ns | 2.5A | 20V | 30V | 710mW Ta | 72mOhm | P-Channel | 400pF @ 15V | 72mOhm @ 2.8A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 72 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI3454CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3454cdvt1e3-datasheets-6102.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | Single | 40 | 1.25W | 1 | FET General Purpose Powers | 4 ns | 12ns | 12 ns | 8 ns | 3.8A | 20V | SILICON | SWITCHING | 30V | 30V | 1.25W Ta 1.5W Tc | 4.2A | 0.05Ohm | N-Channel | 305pF @ 15V | 50m Ω @ 3.8A, 10V | 3V @ 250μA | 4.2A Tc | 10.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR9310TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9310pbf-datasheets-8583.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 3 | No | 1 | Single | 50W | 1 | D-Pak | 270pF | 11 ns | 10ns | 24 ns | 25 ns | -1.8A | 20V | 400V | 50W Tc | 7Ohm | -400V | P-Channel | 270pF @ 25V | 7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.8A Tc | 13nC @ 10V | 7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFSL4310 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirfsl4310-datasheets-6043.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | 260 | Single | 40 | 300W | 1 | FET General Purpose Power | 26 ns | 110ns | 78 ns | 68 ns | 130A | 20V | SILICON | SWITCHING | 2V | 300W Tc | 75A | 550A | 0.007Ohm | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 7m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 250nC @ 10V | |||||||||||||||||||||||||||||||
| AUIRFR2607ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/infineontechnologies-auirfr2607ztrl-datasheets-6050.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 13 Weeks | 3 | EAR99 | ULTRA LOW RESISTANCE | No | AEC-Q101 | SINGLE | GULL WING | 110W | 1 | R-PSSO-G2 | 14 ns | 59ns | 28 ns | 39 ns | 42A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 110W Tc | TO-252AA | 180A | 0.022Ohm | 96 mJ | 75V | N-Channel | 1440pF @ 25V | 22m Ω @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI1037X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1037xt1e3-datasheets-6057.pdf | SOT-563, SOT-666 | 6 | Single | 170mW | SC-89 (SOT-563F) | 15ns | 15 ns | 30 ns | 770mA | 8V | 20V | 170mW Ta | 350mOhm | 20V | P-Channel | 195mOhm @ 770mA, 4.5V | 450mV @ 250μA (Min) | 770mA Ta | 5.5nC @ 4.5V | 195 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | 3.6A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | No | 1 | Single | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF730ASTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 1.437803g | 3 | No | 1 | Single | 74W | 1 | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SI1046R-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1046rt1ge3-datasheets-0104.pdf | SC-75A | 1.6mm | 700μm | 760μm | 3 | 1 | Single | 250mW | 1 | SC-75A | 66pF | 17 ns | 19ns | 19 ns | 76 ns | 606mA | 8V | 20V | 250mW Ta | 420mOhm | N-Channel | 66pF @ 10V | 420mOhm @ 606mA, 4.5V | 950mV @ 250μA | 1.49nC @ 5V | 420 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| AUIRFZ48ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfz48z-datasheets-4058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 16 Weeks | No SVHC | 8.6MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 69ns | 39 ns | 35 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 91W Tc | 240A | 55V | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 250μA | 61A Tc | 64nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI1051X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1051xt1ge3-datasheets-0074.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 32.006612mg | 6 | 1 | Single | SC-89-6 | 560pF | 7.2 ns | 36ns | 36 ns | 52 ns | 1.2A | 5V | 8V | 236mW Ta | 198mOhm | P-Channel | 560pF @ 4V | 122mOhm @ 1.2A, 4.5V | 1V @ 250μA | 9.45nC @ 5V | 122 mΩ | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||
| IRF730ALPBF | Vishay Siliconix | $0.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.41mm | 9.65mm | 4.7mm | 2.387001g | 3 | No | 1 | Single | 74W | I2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF6708S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6708s2tr1pbf-datasheets-6081.pdf | DirectFET™ Isometric S1 | 3.95mm | 490μm | 3.95mm | No SVHC | 6 | No | Single | 20W | 1 | DIRECTFET S1 | 1.01nF | 9.1 ns | 27ns | 11 ns | 10 ns | 13A | 20V | 30V | 1.8V | 2.5W Ta 20W Tc | 14.3mOhm | 30V | N-Channel | 1010pF @ 15V | 1.8 V | 8.9mOhm @ 13A, 10V | 2.35V @ 25μA | 13A Tc | 10nC @ 4.5V | 8.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI1305EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1305edlt1e3-datasheets-7912.pdf | SC-70, SOT-323 | SC-70-3 | 860mA | 8V | 290mW Ta | P-Channel | 280mOhm @ 1A, 4.5V | 450mV @ 250μA (Min) | 860mA Ta | 4nC @ 4.5V | 280 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1405DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405dlt1ge3-datasheets-6027.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | EAR99 | No | DUAL | GULL WING | 1 | 8 ns | 36ns | 30 ns | 33 ns | 1.6A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 8V | 568mW Ta | 0.125Ohm | P-Channel | 125m Ω @ 1.8A, 4.5V | 450mV @ 250μA (Min) | 1.6A Ta | 7nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFR430ATRRPBF | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 111 Weeks | 1.437803g | 3 | No | 1 | Single | D-Pak | 490pF | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | 500V | 110W Tc | 1.7Ohm | 500V | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.7 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AUIRFS4610 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfb4610-datasheets-3776.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.3mm | 2 | 39 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 87ns | 70 ns | 53 ns | 73A | 20V | SILICON | DRAIN | SWITCHING | 2V | 190W Tc | 290A | 100V | N-Channel | 3550pF @ 50V | 2 V | 14m Ω @ 44A, 10V | 4V @ 100μA | 73A Tc | 140nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| SI1303DL-T1-GE3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1303dlt1e3-datasheets-7838.pdf | SC-70, SOT-323 | 3 | 3 | yes | EAR99 | No | PURE MATTE TIN (SN) | DUAL | GULL WING | 260 | 3 | Single | 30 | 290mW | 1 | Other Transistors | 9 ns | 31ns | 14 ns | 12.5 ns | -720mA | 12V | SILICON | 290mW Ta | 0.67A | 20V | P-Channel | 430m Ω @ 1A, 4.5V | 1.4V @ 250μA | 670mA Ta | 2.2nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI1402DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1402dht1e3-datasheets-5976.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | 28.009329mg | 6 | No | 1 | Single | 950mW | 1 | SC-70-6 (SOT-363) | 5 ns | 12ns | 12 ns | 13 ns | 2.7A | 12V | 30V | 950mW Ta | 77mOhm | 30V | N-Channel | 77mOhm @ 3A, 4.5V | 1.6V @ 250μA | 2.7A Ta | 4.5nC @ 4.5V | 77 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||
| AUIRFR48Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr48ztrl-datasheets-4194.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 11MOhm | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 91W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 61ns | 35 ns | 40 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 2V | 91W Tc | TO-252AA | 250A | 55V | N-Channel | 1720pF @ 25V | 11m Ω @ 37A, 10V | 4V @ 50μA | 42A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| AUIRFR5505TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-auirfr5505trl-datasheets-5986.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 57W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 28ns | 16 ns | 20 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 57W Tc | TO-252AA | 64A | 0.11Ohm | 150 mJ | 55V | P-Channel | 650pF @ 25V | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SI1069X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1069xt1ge3-datasheets-0322.pdf | SOT-563, SOT-666 | 184mOhm | Single | 236mW | SC-89-6 | 308pF | 31ns | 31 ns | 23 ns | 940mA | 12V | 20V | 236mW Ta | 268mOhm | 20V | P-Channel | 308pF @ 10V | 184mOhm @ 940mA, 4.5V | 1.5V @ 250μA | 6.86nC @ 5V | 184 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI1402DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1402dht1e3-datasheets-5976.pdf | 6-TSSOP, SC-88, SOT-363 | 111 Weeks | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 5 ns | 12ns | 7 ns | 13 ns | 2.7A | 12V | 30V | 950mW Ta | N-Channel | 77m Ω @ 3A, 4.5V | 1.6V @ 250μA | 2.7A Ta | 4.5nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRL3705ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirl3705z-datasheets-8586.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | No SVHC | 8MOhm | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||
| AUIRLR024N | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirlr024ntrl-datasheets-5754.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 7.1 ns | 74ns | 29 ns | 20 ns | 17A | 16V | SILICON | DRAIN | SWITCHING | 1V | 45W Tc | TO-252AA | 72A | 0.08Ohm | 68 mJ | 55V | N-Channel | 480pF @ 25V | 65m Ω @ 10A, 10V | 2V @ 250μA | 17A Tc | 15nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||
| SI1073X-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1073xt1ge3-datasheets-0119.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 32.006612mg | 173mOhm | 1 | Single | SC-89-6 | 265pF | 26 ns | 28ns | 28 ns | 28 ns | 200mA | 20V | 30V | 236mW Ta | 243mOhm | -30V | P-Channel | 265pF @ 15V | 173mOhm @ 980mA, 10V | 3V @ 250μA | 9.45nC @ 10V | 173 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI4121H-117P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | 2013 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFR5505 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr5505trl-datasheets-5986.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 57W | 1 | Other Transistors | R-PSSO-G2 | 12 ns | 28ns | 16 ns | 20 ns | 18A | 20V | SILICON | DRAIN | SWITCHING | 55V | -2V | 57W Tc | TO-252AA | 64A | -55V | P-Channel | 650pF @ 25V | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| AUIRFZ44VZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfz44vzstrl-datasheets-9194.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 62ns | 38 ns | 35 ns | 57A | 20V | SILICON | DRAIN | SWITCHING | 2V | 92W Tc | 60V | N-Channel | 1690pF @ 25V | 12m Ω @ 34A, 10V | 4V @ 250μA | 57A Tc | 65nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AUIRFR6215 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfr6215trl-datasheets-4160.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 110W Tc | TO-252AA | 13A | 44A | 0.295Ohm | 310 mJ | P-Channel | 860pF @ 25V | 295m Ω @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 10V | ±20V |
