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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPW65R280E6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipw65r280e6fksa1-datasheets-5235.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 104W | 1 | Not Qualified | R-PSFM-T3 | 11 ns | 9ns | 76 ns | 13.8A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 104W Tc | 39A | 0.28Ohm | 290 mJ | N-Channel | 950pF @ 100V | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 13.8A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPD60R2K0C6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd60r2k0c6btma1-datasheets-5240.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 22.3W Tc | 6A | 2Ohm | 11 mJ | N-Channel | 140pF @ 100V | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.4A Tc | 6.7nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP037N08N3GE8181XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp037n08n3ge8181xksa1-datasheets-5250.pdf | TO-220-3 | PG-TO220-3 | 80V | 214W Tc | N-Channel | 8110pF @ 40V | 3.75mOhm @ 100A, 10V | 3.5V @ 155μA | 100A Tc | 117nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R600E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/infineontechnologies-ipp65r600e6xksa1-datasheets-5253.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | yes | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 63W | 1 | Not Qualified | R-PSFM-T3 | 10 ns | 8ns | 11 ns | 64 ns | 7.3A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 63W Tc | TO-220AB | 0.6Ohm | N-Channel | 440pF @ 100V | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 7.3A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| CSD16323Q3C | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd16323q3c-datasheets-5113.pdf | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 8 | 1mm | EAR99 | AVALANCHE RATED | Tin | e3 | DUAL | NO LEAD | 260 | CSD16323 | 8 | Single | NOT SPECIFIED | 3W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-N5 | 5.3 ns | 15ns | 6.3 ns | 13 ns | 21A | 10V | SILICON | DRAIN | SWITCHING | 3W Ta | 60A | 112A | 0.0072Ohm | 125 mJ | 25V | N-Channel | 1300pF @ 12.5V | 4.5m Ω @ 24A, 8V | 1.4V @ 250μA | 21A Ta 60A Tc | 8.4nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||
| IRFHM830TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/infineontechnologies-irfhm830trpbf-datasheets-3347.pdf | 8-VQFN Exposed Pad | 3.2766mm | 990.6μm | 3.3mm | Lead Free | No SVHC | 8 | EAR99 | No | 2.7W | 37W | 1 | 12 ns | 25ns | 9.2 ns | 13 ns | 21A | 20V | 1.8V | 26 ns | 30V | N-Channel | 2155pF @ 25V | 1.8 V | 3.8m Ω @ 20A, 10V | 2.35V @ 50μA | 21A Ta 40A Tc | 31nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R450E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipa60r450e6xksa1-datasheets-5187.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 30W | 1 | Not Qualified | 11 ns | 9ns | 10 ns | 70 ns | 9.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 30W Tc | TO-220AB | 26A | 0.45Ohm | N-Channel | 620pF @ 100V | 450m Ω @ 3.4A, 10V | 3.5V @ 280μA | 9.2A Tc | 28nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FDP8443-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp8443f085-datasheets-5194.pdf | TO-220-3 | 3 | 1.8g | 3 | LAST SHIPMENTS (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | Single | 188W | 1 | FET General Purpose Power | 18.4 ns | 17.9ns | 13.5 ns | 55 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 188W Tc | TO-220AB | 20A | 40V | N-Channel | 9310pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 20A Ta 80A Tc | 185nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFHM830DTR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfhm830dtrpbf-datasheets-5035.pdf | 8-VQFN Exposed Pad | 3.2766mm | 990.6μm | 3.3mm | No SVHC | 8 | EAR99 | No | 2.8W | 37W | 1 | 9.8 ns | 20ns | 6.7 ns | 9.1 ns | 20A | 20V | 1.8V | 24 ns | 30V | N-Channel | 1797pF @ 25V | 1.8 V | 4.3m Ω @ 20A, 10V | 2.35V @ 50μA | 20A Ta 40A Tc | 27nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FDME410NZT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/onsemiconductor-fdme410nzt-datasheets-4994.pdf | 6-PowerUFDFN | 1.6mm | 500μm | 1.6mm | Lead Free | 3 | 25 Weeks | 30mg | No SVHC | 6 | CONSULT SALES OFFICE (Last Updated: 1 week ago) | yes | EAR99 | ESD PROTECTION | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 1.4W | 1 | FET General Purpose Power | S-PDSO-N3 | 7.3 ns | 3.4ns | 3.2 ns | 27 ns | 7A | 8V | SILICON | DRAIN | SWITCHING | 700mV | 2.1W Ta | 7A | 20V | N-Channel | 1025pF @ 10V | 700 mV | 26m Ω @ 7A, 4.5V | 1V @ 250μA | 7A Ta | 13nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| AON6404 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/alphaomegasemiconductor-aon6404-datasheets-3036.pdf | 8-PowerSMD, Flat Leads | 16 Weeks | FET General Purpose Power | 85A | Single | 30V | 2.1W Ta 83W Tc | N-Channel | 9000pF @ 15V | 2.2m Ω @ 20A, 10V | 2V @ 250μA | 25A Ta 85A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2508SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/onsemiconductor-fdms2508sdc-datasheets-4972.pdf | 8-PowerTDFN | 90mg | No SVHC | 8 | No | Single | 78W | Dual Cool™56 | 4.515nF | 14 ns | 5.9ns | 4 ns | 34 ns | 49A | 20V | 25V | 1.7V | 3.3W Ta 78W Tc | 1.95mOhm | 25V | N-Channel | 4515pF @ 13V | 1.7 V | 1.95mOhm @ 28A, 10V | 3V @ 1mA | 34A Ta 49A Tc | 69nC @ 10V | 1.95 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| NVD5802NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntd5802nt4g-datasheets-6843.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.22mm | 2.38mm | 6.73mm | Lead Free | 2 | 27 Weeks | 3 | LIFETIME (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 52ns | 8.5 ns | 39 ns | 101A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 2.5W Ta 93.75W Tc | 16.4A | 0.0078Ohm | 240 mJ | N-Channel | 5300pF @ 12V | 4.4m Ω @ 50A, 10V | 3.5V @ 250μA | 16.4A Ta 101A Tc | 100nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD4969N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd4969nt4g-datasheets-3069.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 26.3W | 1 | FET General Purpose Power | 10 ns | 27ns | 6.4 ns | 13.3 ns | 12.7A | 20V | SILICON | DRAIN | SWITCHING | 1.38W Ta 26.3W Tc | 9.4A | 150A | 0.019Ohm | 15 mJ | 30V | N-Channel | 837pF @ 15V | 9m Ω @ 30A, 10V | 2.5V @ 250μA | 9.4A Ta 41A Tc | 9nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTTFS5826NLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/onsemiconductor-nttfs5826nltag-datasheets-8923.pdf | 8-PowerWDFN | Lead Free | 5 | 8 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 19W | 1 | S-PDSO-F5 | 20A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 19W Tc | 8A | 133A | 0.032Ohm | 20 mJ | 60V | N-Channel | 850pF @ 25V | 24m Ω @ 7.5A, 10V | 3V @ 250μA | 8A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD4965N-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntd4965nt4g-datasheets-2579.pdf | TO-251-3 Stub Leads, IPak | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | 3 | Single | 38.5W | 1 | FET General Purpose Power | 12.1 ns | 34.2ns | 14.2 ns | 18.9 ns | 17.8A | 20V | SILICON | DRAIN | SWITCHING | 1.39W Ta 38.5W Tc | 68A | 248A | 0.01Ohm | 60 mJ | 30V | N-Channel | 1710pF @ 15V | 4.7m Ω @ 30A, 10V | 2.5V @ 250μA | 13A Ta 68A Tc | 17.2nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD5862N-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/onsemiconductor-ntd5862nt4g-datasheets-6351.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 22 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | NO | THROUGH-HOLE | 4 | Single | 115W | 1 | R-PSIP-T3 | 18 ns | 70ns | 60 ns | 35 ns | 98A | 20V | SILICON | DRAIN | 115W Tc | 90A | 335A | 0.0057Ohm | 205 mJ | 60V | N-Channel | 6000pF @ 25V | 5.7m Ω @ 45A, 10V | 4V @ 250μA | 98A Tc | 82nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTTFSC4821NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | 8-PowerWDFN | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA24N50F_F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa24n50f-datasheets-5396.pdf | TO-3P-3, SC-65-3 | TO-3P | 500V | 290W Tc | N-Channel | 4500pF @ 25V | 200mOhm @ 12A, 10V | 5V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFSC4823NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2013 | 8-PowerWDFN | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDFMJ2P023Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdfmj2p023z-datasheets-5093.pdf | 6-WFDFN Exposed Pad | 6 | No | Single | 1.4W | 1 | SC-75, MicroFET | 400pF | 5 ns | 4ns | 4 ns | 23 ns | 2.9A | 8V | 20V | 1.4W Ta | 112mOhm | 20V | P-Channel | 400pF @ 10V | 112mOhm @ 2.9A, 4.5V | 1V @ 250μA | 2.9A Ta | 6.5nC @ 4.5V | Schottky Diode (Isolated) | 112 mΩ | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRLHM630TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlhm630trpbf-datasheets-8249.pdf | 8-VQFN Exposed Pad | 3.2766mm | 990.6μm | 3.3mm | No SVHC | 8 | EAR99 | No | 2.7W | 37W | 1 | 9.1 ns | 32ns | 43 ns | 65 ns | 21A | 12V | 30 ns | 30V | N-Channel | 3170pF @ 25V | 800 mV | 3.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 21A Ta 40A Tc | 62nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA24N50_F109 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqa24n50-datasheets-7869.pdf | TO-3P-3, SC-65-3 | TO-3P | 500V | 290W Tc | N-Channel | 4500pF @ 25V | 200mOhm @ 12A, 10V | 5V @ 250μA | 24A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-13L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0413lge3-datasheets-4867.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | Unknown | 13MOhm | 2 | EAR99 | No | GULL WING | Single | 93.7W | 1 | 15 ns | 18ns | 47 ns | 60 ns | -60A | 20V | SILICON | DRAIN | SWITCHING | -3V | 3W Ta 93.7W Tc | 50A | 80 mJ | 40V | P-Channel | 3120pF @ 25V | 13m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 95nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDS4675-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fds4675f085-datasheets-4925.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 230.4mg | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | GULL WING | Single | 2.4W | 1 | Other Transistors | 20 ns | 46ns | 96 ns | 95 ns | -11A | 20V | SILICON | SWITCHING | 40V | -1.4V | 2.4W Ta | -40V | P-Channel | 4350pF @ 20V | -1.4 V | 13m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 56nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SUD50N02-09P-E3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0209pe3-datasheets-4841.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 9.5mOhm | 3 | No | Single | 9.5W | 1 | TO-252, (D-Pak) | 1.3nF | 8 ns | 10ns | 12 ns | 25 ns | 20A | 20V | 20V | 6.5W Ta 39.5W Tc | 9.5mOhm | 20V | N-Channel | 1300pF @ 10V | 9.5mOhm @ 20A, 10V | 3V @ 250μA | 16nC @ 4.5V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2504SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms2504sdc-datasheets-4962.pdf | 8-PowerTDFN | 90mg | No SVHC | 8 | No | Single | 104W | 1 | 18 ns | 9ns | 5 ns | 44 ns | 42A | 20V | 1.6V | 3.3W Ta 104W Tc | 25V | N-Channel | 7770pF @ 13V | 1.6 V | 1.25m Ω @ 32A, 10V | 3V @ 1mA | 42A Ta 49A Tc | 119nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2510SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms2510sdc-datasheets-4968.pdf | 8-PowerTDFN | 90mg | No SVHC | 8 | Single | 60W | Dual Cool™56 | 2.78nF | 10 ns | 4ns | 3 ns | 27 ns | 49A | 20V | 25V | 3.3W Ta 60W Tc | 2.9mOhm | 25V | N-Channel | 2780pF @ 13V | 1.7 V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 28A Ta 49A Tc | 45nC @ 10V | 2.9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS2506SDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdms2506sdc-datasheets-4952.pdf | 8-PowerTDFN | 90mg | No SVHC | 8 | No | Single | 89W | 1 | 16 ns | 7.4ns | 4.8 ns | 41 ns | 39A | 20V | 1.7V | 3.3W Ta 89W Tc | 25V | N-Channel | 5945pF @ 13V | 1.7 V | 1.45m Ω @ 30A, 10V | 3V @ 1mA | 39A Ta 49A Tc | 93nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP90N04-3M3P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-sup90n043m3pge3-datasheets-5010.pdf | TO-220-3 | 3 | 6.000006g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | SINGLE | 260 | 3 | 1 | 30 | 3.1W | 1 | FET General Purpose Power | 11 ns | 7ns | 7 ns | 45 ns | 90A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 40V | 40V | 1V | 3.1W Ta 125W Tc | TO-220AB | N-Channel | 5286pF @ 20V | 3.3m Ω @ 22A, 10V | 2.5V @ 250μA | 90A Tc | 131nC @ 10V | 4.5V 10V | ±20V |
