Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Source Url Status Check Date | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRFHS8342TR2PBF | Infineon Technologies | $0.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Digi-Reel® | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfhs8342trpbf-datasheets-2942.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | No SVHC | 6 | No | 2.1W | Single | 2.1W | 1 | PG-TSDSON-6 | 600pF | 5.9 ns | 15ns | 5 ns | 5.2 ns | 8.8A | 20V | 30V | 1.8V | 17 ns | 16mOhm | 30V | N-Channel | 600pF @ 25V | 1.8 V | 16mOhm @ 8.5A, 10V | 2.35V @ 25μA | 8.8A Ta 19A Tc | 8.7nC @ 10V | 16 mΩ | ||||||||||||||||||||||||||||||||||||||||||
AUIRFR3710Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr3710z-datasheets-5661.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 26 Weeks | No SVHC | 18MOhm | 3 | EAR99 | Tin | No | GULL WING | Single | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 43ns | 42 ns | 53 ns | 42A | 20V | SILICON | SWITCHING | 2V | 140W Tc | TO-252AA | 220A | 200 mJ | 100V | N-Channel | 2930pF @ 25V | 2 V | 18m Ω @ 33A, 10V | 4V @ 250μA | 42A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRFP2907Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirfp2907z-datasheets-5669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 310W | 1 | FET General Purpose Power | 19 ns | 140ns | 100 ns | 97 ns | 170A | 20V | SILICON | DRAIN | SWITCHING | 2V | 310W Tc | TO-247AC | 680A | 0.0045Ohm | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 170A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRFR3504Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr3504z-datasheets-5675.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | 2 | 39 Weeks | No SVHC | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 90W | 1 | FET General Purpose Power | 15 ns | 74ns | 38 ns | 30 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 2V | 90W Tc | 0.009Ohm | 77 mJ | 40V | N-Channel | 1510pF @ 25V | 9m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRFR2307Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr2307z-datasheets-5684.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 65ns | 29 ns | 44 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | TO-252AA | 75V | N-Channel | 2190pF @ 25V | 16m Ω @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFHS9301TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfhs9301trpbf-datasheets-3985.pdf | 6-PowerVDFN | 6-PQFN (2x2) | 30V | P-Channel | 580pF @ 25V | 37mOhm @ 7.8A, 10V | 2.4V @ 25μA | 6A Ta 13A Tc | 13nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR2607Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr2607z-datasheets-5697.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 26 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 14 ns | 59ns | 28 ns | 39 ns | 45A | 20V | SILICON | DRAIN | SWITCHING | 2V | 110W Tc | TO-252AA | 42A | 0.022Ohm | 96 mJ | 75V | N-Channel | 1440pF @ 25V | 22m Ω @ 30A, 10V | 4V @ 50μA | 42A Tc | 51nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
BUK7619-100B,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7619100b118-datasheets-5559.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 3 | 2013-06-14 00:00:00 | 100V | 200W Tc | N-Channel | 3400pF @ 25V | 19m Ω @ 25A, 10V | 4V @ 1mA | 64A Tc | 53nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFR4104 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr4104-datasheets-5705.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 5.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | GULL WING | Single | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 69ns | 36 ns | 37 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | TO-252AA | 480A | 40V | N-Channel | 2950pF @ 25V | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 42A Tc | 89nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
AUIRF3805S-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3805l7p-datasheets-9636.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 10.35mm | 4.55mm | 10.05mm | 6 | 13 Weeks | No SVHC | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 130ns | 52 ns | 80 ns | 240A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | 0.0026Ohm | 680 mJ | 55V | N-Channel | 7820pF @ 25V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRFR120ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfr120ztrl-datasheets-5724.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | GULL WING | Single | 35W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.3 ns | 26ns | 23 ns | 27 ns | 8.7A | 20V | SILICON | DRAIN | SWITCHING | 35W Tc | TO-252AA | 0.19Ohm | 20 mJ | 100V | N-Channel | 310pF @ 25V | 190m Ω @ 5.2A, 10V | 4V @ 25μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
AUIRF3710Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirf3710z-datasheets-5602.pdf | TO-220-3 | 10.6426mm | 9.017mm | 4.82mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | No | Single | 160W | 1 | FET General Purpose Power | 17 ns | 77ns | 56 ns | 41 ns | 59A | 20V | SILICON | SWITCHING | 2V | 160W Tc | TO-220AB | 240A | 200 mJ | 100V | N-Channel | 2900pF @ 25V | 2 V | 18m Ω @ 35A, 10V | 4V @ 250μA | 59A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
AUIRF1010EZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1010ezstrl-datasheets-3768.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PDSO-G2 | 19 ns | 90ns | 54 ns | 38 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | 0.0085Ohm | 60V | N-Channel | 2810pF @ 25V | 8.5m Ω @ 51A, 10V | 4V @ 250μA | 75A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRF3205ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf3205z-datasheets-7795.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.3mm | 2 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 170W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 95ns | 67 ns | 45 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 2V | 170W Tc | 75A | 440A | 0.0065Ohm | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRF1405ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-auirf1405zstrl-datasheets-1367.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | 2 | 16 Weeks | No SVHC | 2 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 230W | 1 | FET General Purpose Power | 18 ns | 110ns | 82 ns | 48 ns | 150A | 20V | SILICON | DRAIN | SWITCHING | 2V | 230W Tc | 600A | 0.0049Ohm | 55V | N-Channel | 4780pF @ 25V | 4.9m Ω @ 75A, 10V | 4V @ 250μA | 150A Tc | 180nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
AUIRF2907Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/infineontechnologies-auirf2907z-datasheets-5647.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | 3 | 13 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | No | Single | 300W | 1 | FET General Purpose Power | 19 ns | 140ns | 100 ns | 97 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 300W Tc | TO-220AB | 680A | 0.0045Ohm | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRFR4105TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirfr4105trl-datasheets-5655.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 68W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 49ns | 40 ns | 31 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 68W Tc | TO-252AA | 20A | 100A | 0.045Ohm | 65 mJ | 55V | N-Channel | 700pF @ 25V | 45m Ω @ 16A, 10V | 4V @ 250μA | 20A Tc | 34nC @ 10V | ||||||||||||||||||||||||||||||||||||
AUIRF2907ZS7PTL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-auirf2907zs7ptl-datasheets-5546.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | 13 Weeks | 7 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G6 | 21 ns | 90ns | 44 ns | 92 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 0.0038Ohm | 410 mJ | 75V | N-Channel | 7580pF @ 25V | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 180A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
PSMN035-100LS,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 100V | 65W Tc | 27A | N-Channel | 1350pF @ 50V | 32m Ω @ 10A, 10V | 4V @ 1mA | 27A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK761R8-30C,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk761r830c118-datasheets-5540.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | 3 | 2013-06-14 00:00:00 | 30V | 333W Tc | N-Channel | 10349pF @ 25V | 1.8m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFHS8242TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irfhs8242trpbf-datasheets-7095.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | No SVHC | 6 | No | 2.1W | Single | 2.1W | 6-PQFN (2x2) | 653pF | 6.5 ns | 19ns | 5.3 ns | 5.4 ns | 9.9A | 20V | 25V | 17 ns | 13mOhm | 25V | N-Channel | 653pF @ 10V | 1.8 V | 13mOhm @ 8.5A, 10V | 2.35V @ 25μA | 9.9A Ta 21A Tc | 10.4nC @ 10V | 13 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
PHB110NQ08T,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/nexperiausainc-phb110nq08t118-datasheets-5514.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 245 | 3 | Single | 30 | 230W | 1 | R-PSSO-G2 | 35 ns | 107ns | 100 ns | 183 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 230W Tc | 440A | 0.009Ohm | 560 mJ | 75V | N-Channel | 4860pF @ 25V | 9m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 113.1nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRF1010ZS | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirf1010z-datasheets-9189.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.3472mm | 2 | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 18 ns | 150ns | 92 ns | 36 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 140W Tc | 94A | 0.0075Ohm | 55V | N-Channel | 2840pF @ 25V | 7.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 95nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
DMN3005LK3-13 | Diodes Incorporated | $0.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3005lk313-datasheets-5159.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3.949996g | 3 | no | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 4 | 1 | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 7.9 ns | 22.8ns | 43.5 ns | 73.4 ns | 14.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 1.68W Ta | 22A | 48A | 0.0065Ohm | N-Channel | 4342pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 14.5A Ta | 46.9nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
SI1058X-T1-GE3 | Vishay Siliconix | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1058xt1e3-datasheets-7786.pdf | SOT-563, SOT-666 | 6 | No | Single | 1 | SC-89-6 | 380pF | 8 ns | 20ns | 20 ns | 13 ns | 1.3A | 12V | 20V | 236mW Ta | 91mOhm | N-Channel | 380pF @ 10V | 91mOhm @ 1.3A, 4.5V | 1.55V @ 250μA | 5.9nC @ 5V | 91 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
BUK7Y54-75B,115 | NXP USA Inc. | $3.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk7y5475b115-datasheets-5336.pdf | SC-100, SOT-669 | not_compliant | 4 | 75V | 59W Tc | N-Channel | 803pF @ 25V | 54m Ω @ 10A, 10V | 4V @ 1mA | 21.4A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PSMN5R8-30LL,115 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nxpusainc-psmn5r830ll115-datasheets-5476.pdf | 8-VDFN Exposed Pad | YES | 8 | FET General Purpose Power | Single | 30V | 55W Tc | 40A | N-Channel | 1316pF @ 15V | 5.8m Ω @ 10A, 10V | 2.15V @ 1mA | 40A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK724R5-30C,118 | Nexperia USA Inc. | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk724r530c118-datasheets-5499.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | not_compliant | 3 | 30V | 157W Tc | N-Channel | 3760pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUK7607-30B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | /files/nexperiausainc-buk760730b118-datasheets-5507.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | Tin | No | 8541.29.00.75 | e3 | YES | GULL WING | 3 | Single | 157W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 51ns | 44 ns | 51 ns | 108A | 20V | 30V | SILICON | DRAIN | SWITCHING | 157W Tc | 75A | 0.007Ohm | 30V | N-Channel | 2427pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
BUK764R3-40B,118 | NXP USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/nxpusainc-buk764r340b118-datasheets-5495.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | not_compliant | 8541.29.00.75 | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 254W Tc | 176A | 706A | 0.0043Ohm | 961 mJ | N-Channel | 4824pF @ 25V | 4.3m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 69nC @ 10V | 10V | ±20V |
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