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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| APTM100DA40T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100da40t1g-datasheets-2168.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 357W Tc | 0.48Ohm | N-Channel | 6800pF @ 25V | 480m Ω @ 16A, 10V | 5V @ 2.5mA | 20A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APTM20DAM10TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20dam10tg-datasheets-2169.pdf | SP4 | 12 | 4 | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | Not Qualified | 175A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 200V | 200V | 694W Tc | 700A | 2500 mJ | N-Channel | 13700pF @ 25V | 12m Ω @ 87.5A, 10V | 5V @ 5mA | 175A Tc | 224nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| APTM120DA29TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120da29tg-datasheets-2171.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 780W Tc | 3000 mJ | N-Channel | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 34A Tc | 374nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| APTM120SK29TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120sk29tg-datasheets-2173.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 780W | 1 | FET General Purpose Power | Not Qualified | 34A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 780W Tc | 3000 mJ | N-Channel | 10300pF @ 25V | 348m Ω @ 17A, 10V | 5V @ 5mA | 34A Tc | 374nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFU3806PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3806trpbf-datasheets-3289.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | No SVHC | 15.8MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 71W | 1 | FET General Purpose Power | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | SWITCHING | 4V | 71W Tc | 33 ns | 170A | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| AOD496 | Alpha & Omega Semiconductor Inc. | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod496-datasheets-2145.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | SINGLE | GULL WING | 1 | R-PSSO-G2 | 62A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 62.5W Tc | 120A | 0.016Ohm | N-Channel | 1200pF @ 15V | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 62A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| APTM120UM95FAG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120um95fag-datasheets-2149.pdf | SP6 | 2 | 6 | yes | AVALANCHE RATED | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 2 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PUFM-X2 | 103A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 2272W Tc | 3000 mJ | N-Channel | 30900pF @ 25V | 114m Ω @ 51.5A, 10V | 5V @ 15mA | 103A Tc | 1122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| APTM120SK68T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm120sk68t1g-datasheets-2150.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 357W | 1 | FET General Purpose Power | Not Qualified | 15A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1200V | 357W Tc | 90A | N-Channel | 6696pF @ 25V | 816m Ω @ 12A, 10V | 5V @ 2.5mA | 15A Tc | 260nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFP4410ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp4410zpbf-datasheets-2071.pdf&product=infineontechnologies-irfp4410zpbf-6866160 | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 10 Weeks | No SVHC | 3 | EAR99 | No | Single | 230W | 1 | FET General Purpose Power | 16 ns | 52ns | 57 ns | 43 ns | 97A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 230W Tc | TO-247AC | 57 ns | 0.009Ohm | 242 mJ | 100V | N-Channel | 4820pF @ 50V | 4 V | 9m Ω @ 58A, 10V | 4V @ 150μA | 97A Tc | 120nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| 2SK3547G0L | Panasonic Electronic Components | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3547g0l-datasheets-2082.pdf | SOT-723 | SSSMini3-F2 | 12pF | 100mA | 50V | 100mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15A60U(STA4,Q,M) | Toshiba Semiconductor and Storage | $1.60 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-220-3 Full Pack | 12 Weeks | 3 | No | 40W | 1 | TO-220SIS | 950pF | 37ns | 8 ns | 15A | 30V | 600V | 40W Tc | N-Channel | 950pF @ 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 15A Ta | 17nC @ 10V | 300 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| APT50N60JCU2 | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt50n60jcu2-datasheets-2087.pdf | SOT-227-4, miniBLOC | 4 | 4 | AVALANCHE RATED | unknown | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 290W | 1 | FET General Purpose Power | Not Qualified | 52A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 290W Tc | N-Channel | 7200pF @ 25V | 45m Ω @ 22.5A, 10V | 3.9V @ 3mA | 52A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| APTC80DA15T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc80da15t1g-datasheets-2093.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 277W | 1 | FET General Purpose Power | Not Qualified | 28A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 800V | 800V | 277W Tc | 670 mJ | N-Channel | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 28A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APTM100DA18T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm100da18t1g-datasheets-2095.pdf | SP1 | 12 | 1 | EAR99 | AVALANCHE RATED | unknown | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 657W | 1 | FET General Purpose Power | Not Qualified | 40A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 657W Tc | 260A | N-Channel | 14800pF @ 25V | 216m Ω @ 33A, 10V | 5V @ 2.5mA | 40A Tc | 570nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| APTM100SK18TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | SP4 | 12 | 22 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | 12 | 780W | 1 | 18 ns | 12ns | 40 ns | 155 ns | 43A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 1000V | 780W Tc | 3000 mJ | N-Channel | 10400pF @ 25V | 210m Ω @ 21.5A, 10V | 5V @ 5mA | 43A Tc | 372nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| IRLU3114ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr3114ztrpbf-datasheets-0268.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | No SVHC | 3 | No | 140W | 1 | I-PAK | 3.81nF | 25 ns | 140ns | 50 ns | 33 ns | 130A | 16V | 40V | 2.5V | 140W Tc | 6.5mOhm | 40V | N-Channel | 3810pF @ 25V | 4.9mOhm @ 42A, 10V | 2.5V @ 100μA | 42A Tc | 56nC @ 4.5V | 4.9 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| IRFSL4227PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-irfs4227trlpbf-datasheets-8692.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 330W | 1 | FET General Purpose Power | 33 ns | 20ns | 31 ns | 21 ns | 62A | 30V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | 260A | 0.026Ohm | 140 mJ | 200V | N-Channel | 4600pF @ 25V | 5 V | 26m Ω @ 46A, 10V | 5V @ 250μA | 62A Tc | 98nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| 2SK3546G0L | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk3546g0l-datasheets-1984.pdf | SC-89, SOT-490 | SMini3-F2 | 12pF | 100mA | 50V | 125mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4410PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4410trlpbf-datasheets-9933.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No | 200W | 1 | 24 ns | 80ns | 50 ns | 55 ns | 88A | 20V | 200W Tc | 100V | N-Channel | 5150pF @ 50V | 10m Ω @ 58A, 10V | 4V @ 150μA | 88A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8884 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2017 | /files/onsemiconductor-fdmc8884-datasheets-2013.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 200mg | No SVHC | 19MOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 6 ns | 2ns | 2 ns | 15 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 2.3W Ta 18W Tc | 9A | 40A | 24 mJ | 30V | N-Channel | 685pF @ 15V | 1.9 V | 19m Ω @ 9A, 10V | 2.5V @ 250μA | 9A Ta 15A Tc | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||
| APTC60SKM35T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60skm35t1g-datasheets-2053.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | THROUGH-HOLE | NOT SPECIFIED | 12 | NOT SPECIFIED | 416W | 1 | Not Qualified | 72A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | 416W Tc | 200A | 0.035Ohm | N-Channel | 14000pF @ 25V | 35m Ω @ 72A, 10V | 3.9V @ 5.4mA | 72A Tc | 518nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| APTC80SK15T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc80sk15t1g-datasheets-2055.pdf | SP1 | 12 | 1 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 277W | 1 | FET General Purpose Power | Not Qualified | 28A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 800V | 800V | 277W Tc | 670 mJ | N-Channel | 4507pF @ 25V | 150m Ω @ 14A, 10V | 3.9V @ 2mA | 28A Tc | 180nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFU2307ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irfr2307ztrlpbf-datasheets-0691.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | No SVHC | 3 | No | 110W | 1 | IPAK (TO-251) | 2.19nF | 16 ns | 65ns | 29 ns | 44 ns | 53A | 20V | 75V | 75V | 4V | 110W Tc | 31 ns | 47 ns | 16mOhm | 75V | N-Channel | 2190pF @ 25V | 4 V | 16mOhm @ 32A, 10V | 4V @ 100μA | 42A Tc | 75nC @ 10V | 16 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| APTC60DAM24T1G | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptc60dam24t1g-datasheets-2068.pdf | SP1 | 12 | 22 Weeks | 1 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | UPPER | THROUGH-HOLE | 12 | 1 | FET General Purpose Power | 21 ns | 30ns | 45 ns | 100 ns | 95A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 600V | 600V | 462W Tc | 260A | 0.024Ohm | N-Channel | 14400pF @ 25V | 24m Ω @ 47.5A, 10V | 3.9V @ 5mA | 95A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TPC6109-H(TE85L,FM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII-H | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 30V | 700mW Ta | P-Channel | 490pF @ 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200μA | 5A Ta | 12.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD484 | Alpha & Omega Semiconductor Inc. | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 25A | 30V | 2.1W Ta 50W Tc | N-Channel | 1220pF @ 15V | 15m Ω @ 20A, 10V | 2.5V @ 250μA | 25A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3539G0L | Panasonic Electronic Components | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-2sk353900l-datasheets-5224.pdf | SC-85 | 85 | SMini3-F2 | 12pF | 100mA | 50V | 150mW Ta | N-Channel | 12pF @ 3V | 12Ohm @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 12 Ω | 2.5V 4V | ±7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL3806PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3806trlpbf-datasheets-7690.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 15.8MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 40 | 71W | 1 | FET General Purpose Power | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 4V | 71W Tc | 33 ns | 170A | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRF1018ESLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | /files/infineontechnologies-irf1018estrlpbf-datasheets-8372.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 40 | 110W | 1 | FET General Purpose Power | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 110W Tc | 39 ns | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| FDD6780 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/onsemiconductor-fdd6780-datasheets-1963.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 3 | EAR99 | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5ns | 3 ns | 19 ns | 16.5A | 20V | SILICON | DRAIN | SWITCHING | 3.7W Ta 32.6W Tc | 48A | 0.0086Ohm | 24 mJ | 25V | N-Channel | 1590pF @ 13V | 8.5m Ω @ 16.5A, 10V | 3V @ 250μA | 16.5A Ta 30A Tc | 29nC @ 10V | 4.5V 10V | ±20V |
