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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRLBD59N04ETRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | TO-263-6, D2Pak (5 Leads + Tab), TO-263BA | 40V | 130W Tc | N-Channel | 2190pF @ 25V | 18m Ω @ 35A, 10V | 2V @ 250μA | 59A Tc | 50nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7521D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineon-irf7521d1pbf-datasheets-4775.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | No | 1.25W | 1 | Micro8™ | 260pF | 5.7 ns | 24ns | 16 ns | 15 ns | 2.4A | 12V | 20V | 1.3W Ta | 135mOhm | 20V | N-Channel | 260pF @ 15V | 135mOhm @ 1.7A, 4.5V | 700mV @ 250μA | 2.4A Ta | 8nC @ 4.5V | Schottky Diode (Isolated) | 135 mΩ | 2.7V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFR3806PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfr3806trpbf-datasheets-3289.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | No SVHC | 3 | EAR99 | Tin | No | e3 | SINGLE | GULL WING | 260 | 30 | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 71W Tc | TO-252AA | 33 ns | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFZ48VSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfz48vstrlpbf-datasheets-3000.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 60V | 150W Tc | N-Channel | 1985pF @ 25V | 12m Ω @ 43A, 10V | 4V @ 250μA | 72A Tc | 110nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6215LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | /files/infineontechnologies-irf6215strrpbf-datasheets-2240.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 3 | No | 110W | 1 | TO-262 | 860pF | 14 ns | 36ns | 37 ns | 53 ns | -13A | 20V | 150V | -4V | 3.8W Ta 110W Tc | 290mOhm | -150V | P-Channel | 860pF @ 25V | 290mOhm @ 6.6A, 10V | 4V @ 250μA | 13A Tc | 66nC @ 10V | 290 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFB4233PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irfb4233pbf-datasheets-2921.pdf | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | No SVHC | 3 | No | Single | 370W | 1 | TO-220AB | 5.51nF | 31 ns | 51 ns | 56A | 30V | 276V | 230V | 5V | 370W Tc | 37mOhm | 230V | N-Channel | 5510pF @ 25V | 5 V | 37mOhm @ 28A, 10V | 5V @ 250μA | 56A Tc | 170nC @ 10V | 37 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF1018ESPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf1018estrlpbf-datasheets-8372.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 52 Weeks | No SVHC | 8.4MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | 39 ns | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| IRF9520NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2005 | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 100V | 3.8W Ta 48W Tc | P-Channel | 350pF @ 25V | 480mOhm @ 4A, 10V | 4V @ 250μA | 6.8A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3715ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3715zlpbf-datasheets-9816.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3805LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | /files/infineontechnologies-irf3805strlpbf-datasheets-3006.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No | 130W | 1 | TO-262 | 7.96nF | 150 ns | 20ns | 87 ns | 93 ns | 75A | 20V | 55V | 300W Tc | 3.3mOhm | 55V | N-Channel | 7960pF @ 25V | 3.3mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 290nC @ 10V | 3.3 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl1404zstrlpbf-datasheets-8259.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | No | 230W | 19 ns | 180ns | 49 ns | 30 ns | 75A | 16V | 230W Tc | 40V | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 120A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714STRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3714lpbf-datasheets-8347.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | Single | 47W | D2PAK | 670pF | 78ns | 4.5 ns | 10 ns | 36A | 20V | 20V | 47W Tc | 20mOhm | 20V | N-Channel | 670pF @ 10V | 20mOhm @ 18A, 10V | 3V @ 250μA | 36A Tc | 9.7nC @ 4.5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3207PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfs3207trlpbf-datasheets-6227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75V | 75V | 300W Tc | 75A | 720A | 0.0045Ohm | 910 mJ | N-Channel | 7600pF @ 50V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 170A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRF7526D1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7526d1trpbf-datasheets-2538.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | NOT SPECIFIED | NOT SPECIFIED | 800mW | 1 | -2A | 20V | 30V | 1.25W Ta | -30V | P-Channel | 180pF @ 25V | 200m Ω @ 1.2A, 10V | 1V @ 250μA | 2A Ta | 11nC @ 10V | Schottky Diode (Isolated) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3711ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3711zpbf-datasheets-8407.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 79W Tc | N-Channel | 2150pF @ 10V | 6m Ω @ 15A, 10V | 2.45V @ 250μA | 92A Tc | 24nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3704zlpbf-datasheets-9967.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20V | 57W Tc | N-Channel | 1220pF @ 10V | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3704ZCSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | compliant | e3 | MATTE TIN OVER NICKEL | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 57W Tc | 42A | 260A | 0.0079Ohm | 36 mJ | N-Channel | 1220pF @ 10V | 7.9m Ω @ 21A, 10V | 2.55V @ 250μA | 67A Tc | 13nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRL3715ZCSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11mOhm @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR1018EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfr1018etrpbf-datasheets-8025.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 15 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-252AA | 39 ns | 56A | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 56A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRF2903ZSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2903zstrlp-datasheets-2449.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 2.4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 290W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 100ns | 37 ns | 48 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 290W Tc | 1020A | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6726MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6726mtrpbf-datasheets-5568.pdf | DirectFET™ Isometric MT | 5.45mm | 508μm | 5.05mm | Lead Free | 3 | No SVHC | 7 | EAR99 | No | BOTTOM | Single | 2.8W | 1 | R-XBCC-N3 | 20 ns | 30ns | 17 ns | 25 ns | 32A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.7V | 2.8W Ta 89W Tc | 41 ns | 250A | 260 mJ | 30V | N-Channel | 6140pF @ 15V | 1.7 V | 1.7m Ω @ 32A, 10V | 2.35V @ 150μA | 32A Ta 180A Tc | 77nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| APTM20UM09SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm20um09sg-datasheets-2772.pdf | J3 Module | 4 | yes | EAR99 | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 195A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 200V | 200V | 780W Tc | 780A | 0.009Ohm | 1300 mJ | N-Channel | 12300pF @ 25V | 9m Ω @ 74.5A, 10V | 5V @ 4mA | 195A Tc | 217nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRF7413QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7413qtrpbf-datasheets-2563.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.5W | 2.5W | 8-SO | 1.8nF | 8.6 ns | 50ns | 46 ns | 52 ns | 13A | 20V | 30V | 18mOhm | N-Channel | 1800pF @ 25V | 11mOhm @ 7.3A, 10V | 3V @ 250μA | 13A Ta | 79nC @ 10V | 11 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR3711ZCTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr3711zctrpbf-datasheets-2796.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20V | N-Channel | 2160pF @ 10V | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 93A Tc | 27nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL1404ZSPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl1404zstrlpbf-datasheets-8259.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | EAR99 | 40V | 230W Tc | N-Channel | 5080pF @ 25V | 3.1m Ω @ 75A, 10V | 2.7V @ 250μA | 75A Tc | 110nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103D1STRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 30V | 3.1W Ta 89W Tc | N-Channel | 1900pF @ 25V | 14mOhm @ 34A, 10V | 1V @ 250μA | 64A Tc | 43nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3806PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfs3806trlpbf-datasheets-7690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | No SVHC | 3 | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 4V | 71W Tc | 33 ns | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRL3103D1SPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FETKY™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irl3103d1spbf-datasheets-2841.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 3.1W Ta 89W Tc | N-Channel | 1900pF @ 25V | 14m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 43nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-6006PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-646006pbf-datasheets-2844.pdf | TO-247-3 | 300V | 430W Tc | N-Channel | 7370pF @ 25V | 59m Ω @ 33A, 10V | 5V @ 250μA | 46A Tc | 247nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-2105PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf1404zpbf-datasheets-2186.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | TO-262 | 4.34nF | 75A | 40V | 200W Tc | N-Channel | 4340pF @ 25V | 3.7mOhm @ 75A, 10V | 4V @ 250μA | 75A Tc | 150nC @ 10V | 3.7 mΩ | 10V | ±20V |
