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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFSL4310PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/infineontechnologies-irfb4310pbf-datasheets-0629.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.67mm | 9.65mm | 4.83mm | 3 | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 330W | 1 | FET General Purpose Power | 26 ns | 110ns | 78 ns | 68 ns | 140A | 20V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | 75A | 550A | 0.007Ohm | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 4 V | 7m Ω @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRFR1018EPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfr1018etrpbf-datasheets-8025.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 15 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 110W Tc | TO-252AA | 39 ns | 56A | 0.0084Ohm | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 56A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRF2903ZSTRLP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2903zstrlp-datasheets-2449.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 2.4MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 290W | 1 | FET General Purpose Power | R-PSSO-G2 | 24 ns | 100ns | 37 ns | 48 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 290W Tc | 1020A | 820 mJ | 30V | N-Channel | 6320pF @ 25V | 2.4m Ω @ 75A, 10V | 4V @ 150μA | 75A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF6726MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6726mtrpbf-datasheets-5568.pdf | DirectFET™ Isometric MT | 5.45mm | 508μm | 5.05mm | Lead Free | 3 | No SVHC | 7 | EAR99 | No | BOTTOM | Single | 2.8W | 1 | R-XBCC-N3 | 20 ns | 30ns | 17 ns | 25 ns | 32A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.7V | 2.8W Ta 89W Tc | 41 ns | 250A | 260 mJ | 30V | N-Channel | 6140pF @ 15V | 1.7 V | 1.7m Ω @ 32A, 10V | 2.35V @ 150μA | 32A Ta 180A Tc | 77nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF7452QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.5W | 2.5W | 8-SO | 930pF | 9.5 ns | 11ns | 13 ns | 16 ns | 4.5A | 30V | 100V | 60mOhm | N-Channel | 930pF @ 25V | 60mOhm @ 2.7A, 10V | 5.5V @ 250μA | 4.5A Ta | 50nC @ 10V | 60 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7416QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7416qtrpbf-datasheets-2506.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | No SVHC | 8 | No | 2.5W | 2.5W | 1 | Other Transistors | 18 ns | 49ns | 60 ns | 59 ns | -10A | 20V | Single | 30V | P-Channel | 1700pF @ 25V | -1 V | 20m Ω @ 5.6A, 10V | 1V @ 250μA | 10A Ta | 92nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF7478QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7478qtrpbf-datasheets-2520.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | 2.5W | 2.5W | 1 | 8-SO | 1.74nF | 7.7 ns | 2.6ns | 13 ns | 44 ns | 4.2A | 20V | 60V | 30mOhm | N-Channel | 1740pF @ 25V | 26mOhm @ 4.2A, 10V | 3V @ 250μA | 7A Ta | 31nC @ 4.5V | 26 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF7700GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | No SVHC | 8 | 1.5W | 1 | 8-TSSOP | 4.3nF | 8.6A | 12V | 20V | 1.5W Ta | 15mOhm | -20V | P-Channel | 4300pF @ 15V | -1.2 V | 15mOhm @ 8.6A, 4.5V | 1.2V @ 250μA | 8.6A Ta | 89nC @ 5V | 15 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6722MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6722mtrpbf-datasheets-9984.pdf | DirectFET™ Isometric MP | 6.35mm | 508μm | 5.05mm | No SVHC | 5 | No | 42W | 1 | DIRECTFET™ MP | 1.3nF | 11 ns | 7.8ns | 6.1 ns | 9.5 ns | 13A | 20V | 30V | 1.8V | 2.3W Ta 42W Tc | 29 ns | 10.8mOhm | 30V | N-Channel | 1300pF @ 15V | 7.7mOhm @ 13A, 10V | 2.4V @ 50μA | 13A Ta 56A Tc | 17nC @ 4.5V | 7.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF7703GTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineon-irf7703gtrpbf-datasheets-4693.pdf | 8-TSSOP (0.173, 4.40mm Width) | No SVHC | 8 | 1.5W | 1 | 8-TSSOP | 5.22nF | 6A | 20V | 40V | 1.5W Ta | 45mOhm | -40V | P-Channel | 5220pF @ 25V | -3 V | 28mOhm @ 6A, 10V | 3V @ 250μA | 6A Ta | 62nC @ 4.5V | 28 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6716MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6716mtrpbf-datasheets-5234.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 1.6MOhm | 5 | No | 3.6W | 1 | DIRECTFET™ MX | 5.15nF | 26 ns | 105ns | 41 ns | 25 ns | 39A | 20V | 25V | 25V | 1.9V | 3.6W Ta 78W Tc | 36 ns | 2.6mOhm | 25V | N-Channel | 5150pF @ 13V | 1.9 V | 1.6mOhm @ 40A, 10V | 2.4V @ 100μA | 39A Ta 180A Tc | 59nC @ 4.5V | 1.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6710S2TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6710s2tr1pbf-datasheets-2324.pdf | DirectFET™ Isometric S1 | 4.826mm | 558.8μm | 3.95mm | Lead Free | No SVHC | 5.9MOhm | 6 | No | 1.8W | 1 | DIRECTFET S1 | 1.19nF | 7.9 ns | 20ns | 6 ns | 5.2 ns | 12A | 20V | 25V | 25V | 1.8V | 1.8W Ta 15W Tc | 21 ns | 11.9mOhm | 25V | N-Channel | 1190pF @ 13V | 1.8 V | 5.9mOhm @ 12A, 10V | 2.4V @ 25μA | 12A Ta 37A Tc | 13nC @ 4.5V | 5.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF7404QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7404qtrpbf-datasheets-2650.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | EAR99 | No | 2.5W | 2.5W | 1 | Other Transistors | 14 ns | 32ns | 65 ns | 100 ns | -6.7A | 12V | Single | 20V | 7.7A | P-Channel | 1500pF @ 15V | 40m Ω @ 3.2A, 4.5V | 700mV @ 250μA | 6.7A Ta | 50nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRF6727MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irf6727mtrpbf-datasheets-1089.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | No SVHC | 7 | No | Single | 2.8W | 1 | DIRECTFET™ MX | 6.19nF | 21 ns | 31ns | 16 ns | 24 ns | 32A | 20V | 30V | 30V | 1.8V | 2.8W Ta 89W Tc | 41 ns | 2.4mOhm | 30V | N-Channel | 6190pF @ 15V | 1.8 V | 1.7mOhm @ 32A, 10V | 2.35V @ 100μA | 32A Ta 180A Tc | 74nC @ 4.5V | 1.7 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF7805ZGTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7805ztrpbf-datasheets-8126.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | 8 | No | Single | 2.5W | 8-SO | 2.05nF | 11 ns | 10ns | 3.7 ns | 14 ns | 16A | 20V | 30V | 2.5W Ta | 6.8mOhm | 30V | N-Channel | 2080pF @ 15V | 6.8mOhm @ 16A, 10V | 2.25V @ 250μA | 16A Ta | 27nC @ 4.5V | 6.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH7923TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Cut Tape (CT) | 2 (1 Year) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfh7923trpbf-datasheets-2701.pdf | 8-PowerVDFN | 30V | N-Channel | 1095pF @ 15V | 8.7m Ω @ 15A, 10V | 2.35V @ 25μA | 15A Ta 33A Tc | 13nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6725MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6725mtr1pbf-datasheets-2498.pdf | DirectFET™ Isometric MX | 6.35mm | 506μm | 5.05mm | Lead Free | No SVHC | 2.2MOhm | 7 | EAR99 | No | 2.8W | 1 | FET General Purpose Power | 16 ns | 22ns | 13 ns | 19 ns | 28A | 20V | 30V | Single | 1.8V | 2.8W Ta 100W Tc | 41 ns | 30V | N-Channel | 4700pF @ 15V | 1.8 V | 2.2m Ω @ 28A, 10V | 2.35V @ 100μA | 28A Ta 170A Tc | 54nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF7805QTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7805qtrpbf-datasheets-2725.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | No | 2.5W | 2.5W | FET General Purpose Power | 16 ns | 20ns | 16 ns | 38 ns | 13A | 12V | Single | 30V | N-Channel | 11m Ω @ 7A, 4.5V | 3V @ 250μA | 13A Ta | 31nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6775MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | RoHS Compliant | 2013 | /files/infineontechnologies-irf6775mtrpbf-datasheets-4650.pdf | DirectFET™ Isometric MZ | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 56MOhm | 7 | EAR99 | No | Dual | 89W | 1 | 5.9 ns | 7.8ns | 15 ns | 5.8 ns | 28A | 20V | 150V | 5V | 2.8W Ta 89W Tc | 150V | N-Channel | 1411pF @ 25V | 5 V | 56m Ω @ 5.6A, 10V | 5V @ 100μA | 4.9A Ta 28A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FDS8874 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fds8874-datasheets-2250.pdf | 30V | 16A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 2.5W | 1 | 45ns | 50 ns | 54 ns | 16A | 20V | 2.5W Ta | 30V | N-Channel | 3990pF @ 15V | 5.5m Ω @ 16A, 10V | 2.5V @ 250μA | 16A Ta | 72nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APTM50UM25SG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50um25sg-datasheets-2264.pdf | J3 Module | 4 | yes | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-XUFM-X4 | 149A | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | ISOLATED | SWITCHING | 500V | 500V | 1250W Tc | 550A | 0.025Ohm | 1600 mJ | N-Channel | 17500pF @ 25V | 25m Ω @ 74.5A, 10V | 5V @ 10mA | 149A Tc | 364nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| 64-2096PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf2907zs7ppbf-datasheets-9830.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 75V | 300W Tc | N-Channel | 7580pF @ 25V | 3.8m Ω @ 110A, 10V | 4V @ 250μA | 160A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL4310ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs4310ztrlpbf-datasheets-2802.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | 3 | 15 Weeks | No SVHC | 3 | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 40 | 250W | 1 | FET General Purpose Power | Not Qualified | 20 ns | 60ns | 57 ns | 55 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250W Tc | 560A | 0.006Ohm | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| IRF6714MTR1PBF | Infineon Technologies | $2.57 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6714mtrpbf-datasheets-0724.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | Lead Free | No SVHC | 2.1Ohm | 7 | No | 2.8W | 1 | DIRECTFET™ MX | 3.89nF | 18 ns | 26ns | 9.6 ns | 13 ns | 29A | 20V | 25V | 25V | 1.9V | 2.8W Ta 89W Tc | 39 ns | 3.4mOhm | 25V | N-Channel | 3890pF @ 13V | 1.9 V | 2.1mOhm @ 29A, 10V | 2.4V @ 100μA | 29A Ta 166A Tc | 44nC @ 4.5V | 2.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| APTM50DAM38TG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -40°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptm50dam38tg-datasheets-2306.pdf | SP4 | 12 | 4 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | UPPER | UNSPECIFIED | NOT SPECIFIED | 12 | NOT SPECIFIED | 694W | 1 | FET General Purpose Power | Not Qualified | 90A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | ISOLATED | SWITCHING | 500V | 500V | 694W Tc | 360A | 2500 mJ | N-Channel | 11200pF @ 25V | 45m Ω @ 45A, 10V | 5V @ 5mA | 90A Tc | 246nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRF6712STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6712strpbf-datasheets-3431.pdf | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | No SVHC | 4.9MOhm | 5 | No | 2.2W | 1 | DIRECTFET™ SQ | 1.57nF | 11 ns | 40ns | 12 ns | 14 ns | 17A | 20V | 25V | 25V | 1.9V | 2.2W Ta 36W Tc | 26 ns | 8.7mOhm | 25V | N-Channel | 1570pF @ 13V | 1.9 V | 4.9mOhm @ 17A, 10V | 2.4V @ 50μA | 17A Ta 68A Tc | 18nC @ 4.5V | 4.9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF6674TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6674trpbf-datasheets-1549.pdf | DirectFET™ Isometric MZ | 6.35mm | 533.4μm | 5.05mm | No SVHC | 7 | No | Dual | 3.6W | 1 | DIRECTFET™ MZ | 1.35nF | 7 ns | 12ns | 8.7 ns | 12 ns | 13.4A | 20V | 60V | 60V | 3.6W Ta 89W Tc | 48 ns | 9mOhm | 60V | N-Channel | 1350pF @ 25V | 4 V | 11mOhm @ 13.4A, 10V | 4.9V @ 100μA | 13.4A Ta 67A Tc | 36nC @ 10V | 11 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF6721STR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6721str1pbf-datasheets-2298.pdf | DirectFET™ Isometric SQ | 4.826mm | 508μm | 3.95mm | No SVHC | 6 | No | 2.2W | 1 | DIRECTFET™ SQ | 1.43nF | 7.8 ns | 8.9ns | 5.3 ns | 9.3 ns | 14A | 20V | 30V | 1.9V | 2.2W Ta 42W Tc | 26 ns | 10.9mOhm | 30V | N-Channel | 1430pF @ 15V | 1.9 V | 7.3mOhm @ 14A, 10V | 2.4V @ 25μA | 14A Ta 60A Tc | 17nC @ 4.5V | 7.3 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AOD452 | Alpha & Omega Semiconductor Inc. | $0.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aod452-datasheets-1730.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | SINGLE | GULL WING | 3 | 1 | Not Qualified | R-PSSO-G2 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.5W Ta 51.5W Tc | 150A | 0.0085Ohm | N-Channel | 1476pF @ 12.5V | 8.5m Ω @ 30A, 10V | 3V @ 250μA | 55A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF6715MTR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | /files/infineontechnologies-irf6715mtrpbf-datasheets-5289.pdf | DirectFET™ Isometric MX | 5.45mm | 508μm | 5.05mm | No SVHC | 7 | No | Single | 2.8W | 1 | DIRECTFET™ MX | 5.34nF | 20 ns | 31ns | 12 ns | 16 ns | 34A | 20V | 25V | 25V | 1.9V | 2.8W Ta 78W Tc | 42 ns | 2.7mOhm | 25V | N-Channel | 5340pF @ 13V | 1.9 V | 1.6mOhm @ 34A, 10V | 2.4V @ 100μA | 34A Ta 180A Tc | 59nC @ 4.5V | 1.6 mΩ | 4.5V 10V | ±20V |
