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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTD4858NA-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 13.6A | 25V | 1.3W Ta 54.5W Tc | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP2N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqp2n50-datasheets-3090.pdf | TO-220-3 | TO-220-3 | 500V | 55W Tc | N-Channel | 230pF @ 25V | 5.3Ohm @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4858NA-35G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-251-3 Stub Leads, IPak | 13.6A | 25V | 1.3W Ta 54.5W Tc | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD4865NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/onsemiconductor-ntd4865nt4g-datasheets-3094.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 1.92W | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 19ns | 19 ns | 17.4 ns | 44A | 20V | SILICON | DRAIN | SWITCHING | 1.27W Ta 33.3W Tc | 8.5A | 87A | 0.0109Ohm | 50 mJ | 25V | N-Channel | 827pF @ 12V | 10.9m Ω @ 30A, 10V | 2.5V @ 250μA | 8.5A Ta 44A Tc | 10.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTP5412NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp5412ng-datasheets-3096.pdf | TO-220-3 | Lead Free | 3 | 3 | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 125W | 1 | FET General Purpose Power | Not Qualified | 115ns | 89 ns | 41 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 125W Tc | TO-220AB | 60V | N-Channel | 3220pF @ 25V | 14m Ω @ 30A, 10V | 4V @ 250μA | 60A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPP114N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipp114n03lg-datasheets-3098.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 38W Tc | TO-220AB | 30A | 210A | 0.0114Ohm | 30 mJ | N-Channel | 1500pF @ 15V | 11.4m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFSL4620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfs4620trlpbf-datasheets-1128.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | No SVHC | 63.7MOhm | 3 | No | Single | 144W | TO-262 | 1.71nF | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 24A | 20V | 200V | 200V | 5V | 144W Tc | 77.5mOhm | 200V | N-Channel | 1710pF @ 50V | 5 V | 77.5mOhm @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 77.5 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTLJS1102PTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntljs1102ptbg-datasheets-3062.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 6 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 3.3W | 1 | Other Transistors | Not Qualified | 41ns | 70 ns | 80 ns | 3.7A | 6V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8V | 700mW Ta | -8V | P-Channel | 1585pF @ 4V | 36m Ω @ 6.2A, 4.5V | 720mV @ 250μA | 3.7A Ta | 25nC @ 4.5V | 1.2V 4.5V | ±6V | |||||||||||||||||||||||||||||||||||||
| NTD4858NAT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4858nt4g-datasheets-0262.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 | Single | 2W | 13.6A | 20V | 1.3W Ta 54.5W Tc | 25V | N-Channel | 1563pF @ 12V | 6.2m Ω @ 30A, 10V | 2.5V @ 250μA | 11.2A Ta 73A Tc | 19.2nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL5620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfsl5620pbf-datasheets-3114.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | 3 | No | Single | 144W | 1 | TO-262 | 1.71nF | 8.6 ns | 14.6ns | 9.9 ns | 17.1 ns | 24A | 20V | 200V | 144W Tc | 77.5mOhm | 200V | N-Channel | 1710pF @ 50V | 77.5mOhm @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 77.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFU4620PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/infineontechnologies-irfr4620trlpbf-datasheets-3882.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 2.39mm | 6.22mm | Lead Free | 3 | No SVHC | 3 | EAR99 | Tin | No | e3 | 260 | Single | 30 | 144W | 1 | FET General Purpose Power | 13.4 ns | 22.4ns | 14.8 ns | 25.4 ns | 24A | 20V | 200V | SILICON | DRAIN | SWITCHING | 144W Tc | 0.078Ohm | 200V | N-Channel | 1710pF @ 50V | 5 V | 78m Ω @ 15A, 10V | 5V @ 100μA | 24A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPP065N03LGXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb065n03lgatma1-datasheets-3034.pdf | TO-220-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | 3 | 1 | FET General Purpose Power | 5.5 ns | 4.2ns | 3.4 ns | 21 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 56W Tc | TO-220AB | 0.0095Ohm | 60 mJ | N-Channel | 2400pF @ 15V | 6.5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPU090N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd090n03lgbtma1-datasheets-5506.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 42W Tc | 40A | 280A | 0.0135Ohm | 70 mJ | N-Channel | 1600pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 40A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQB17P06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi17p06tu-datasheets-2749.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.75W Ta 79W Tc | P-Channel | 900pF @ 25V | 120mOhm @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 27nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5807NT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/onsemiconductor-ntd5807nt4g-datasheets-3079.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | Lead Free | 2 | 4 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | GULL WING | 260 | 4 | Single | 40 | 33W | 1 | FET General Purpose Power | R-PSSO-G2 | 11.2 ns | 20.4ns | 2 ns | 15.6 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 33W Tc | 40V | N-Channel | 603pF @ 25V | 31m Ω @ 5A, 10V | 2.5V @ 250μA | 23A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| NTP5426NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp5426ng-datasheets-3086.pdf | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 2 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 215W | 1 | 100ns | 95 ns | 105 ns | 130A | 20V | SILICON | ISOLATED | SWITCHING | 215W Tc | TO-220AB | 260A | 0.006Ohm | 60V | N-Channel | 5800pF @ 25V | 6m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NTP5411NG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp5411ng-datasheets-3088.pdf | TO-220-3 | Lead Free | 3 | 3 | LAST SHIPMENTS (Last Updated: 4 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 166W | 1 | FET General Purpose Power | Not Qualified | 122ns | 113 ns | 116 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 166W Tc | TO-220AB | 280 mJ | 60V | N-Channel | 4500pF @ 25V | 3.2 V | 10m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 130nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPS105N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips105n03lgakma1-datasheets-3019.pdf | TO-251-3 Stub Leads, IPak | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSIP-T3 | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 38W Tc | 245A | 30 mJ | N-Channel | 1500pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 35A Tc | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPU050N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips050n03lgakma1-datasheets-3006.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | 50A | 350A | 0.0073Ohm | 60 mJ | N-Channel | 3200pF @ 15V | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPU060N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd060n03lgatma1-datasheets-8101.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 56W Tc | 50A | 350A | 0.009Ohm | 60 mJ | N-Channel | 2400pF @ 15V | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPU105N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips105n03lgakma1-datasheets-3019.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 38W Tc | 35A | 245A | 0.0105Ohm | 30 mJ | N-Channel | 1500pF @ 15V | 10.5m Ω @ 30A, 10V | 2.2V @ 250μA | 35A Tc | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IPB096N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp096n03lg-datasheets-2972.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | 35A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 42W Tc | 245A | 0.0141Ohm | 40 mJ | N-Channel | 1600pF @ 15V | 9.6m Ω @ 30A, 10V | 2.2V @ 250μA | 35A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB065N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb065n03lgatma1-datasheets-3033.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 52 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 56W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5.5 ns | 4.2ns | 3.4 ns | 21 ns | 50A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 56W Tc | 0.0095Ohm | 60 mJ | N-Channel | 2400pF @ 15V | 6.5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7107DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7107dnt1ge3-datasheets-2911.pdf | PowerPAK® 1212-8 | 5 | yes | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | Other Transistors | Not Qualified | S-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.5W Ta | 9.8A | 40A | 0.0108Ohm | P-Channel | 10.8m Ω @ 15.3A, 4.5V | 1V @ 450μA | 9.8A Ta | 44nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NTLJS1102PTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntljs1102ptbg-datasheets-3062.pdf | 6-WDFN Exposed Pad | Lead Free | 6 | 36mOhm | 6 | LAST SHIPMENTS (Last Updated: 5 days ago) | yes | EAR99 | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 3.3W | 1 | Other Transistors | Not Qualified | 41ns | 70 ns | 80 ns | 3.7A | 6V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8V | 700mW Ta | -8V | P-Channel | 1585pF @ 4V | 36m Ω @ 6.2A, 4.5V | 720mV @ 250μA | 3.7A Ta | 25nC @ 4.5V | 1.2V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||
| NTD4863NA-1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd4863na1g-datasheets-3067.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 | LAST SHIPMENTS (Last Updated: 2 weeks ago) | yes | EAR99 | e3 | Tin (Sn) | NO | 4 | Single | 1.95W | 1 | R-PSIP-T3 | 16.5ns | 16.5 ns | 20.2 ns | 8.6A | 20V | SILICON | DRAIN | SWITCHING | 1.27W Ta 36.6W Tc | 9.2A | 98A | 60.5 mJ | 25V | N-Channel | 990pF @ 12V | 9.3m Ω @ 30A, 10V | 2.5V @ 250μA | 9.2A Ta 49A Tc | 13.5nC @ 4.5V | ||||||||||||||||||||||||||||||||||||||||||
| HUFA75307P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75307d3s-datasheets-2615.pdf | TO-220-3 | TO-220-3 | 55V | 45W Tc | N-Channel | 250pF @ 25V | 90mOhm @ 15A, 10V | 4V @ 250μA | 15A Tc | 20nC @ 20V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS040N03LGBKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd040n03lgatma1-datasheets-8626.pdf | TO-251-3 Stub Leads, IPak | PG-TO251-3 | 30V | 79W Tc | N-Channel | 3900pF @ 15V | 4mOhm @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU135N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n03lgatma1-datasheets-0106.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 31W Tc | 30A | 210A | 0.0135Ohm | 20 mJ | N-Channel | 1000pF @ 15V | 13.5m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPS050N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips050n03lgakma1-datasheets-3006.pdf | TO-251-3 Stub Leads, IPak | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | TO-251AA | 50A | 350A | 0.0073Ohm | 60 mJ | N-Channel | 3200pF @ 15V | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V |
