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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI7459DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7459dpt1ge3-datasheets-2901.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 180 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | P-Channel | 6.8m Ω @ 22A, 10V | 3V @ 250μA | 13A Ta | 170nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| HUF75321D3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf75321d3-datasheets-2834.pdf | 55V | 20A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 2 | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 55ns | 66 ns | 47 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-252AA | 0.036Ohm | 55V | N-Channel | 680pF @ 25V | 36m Ω @ 20A, 10V | 4V @ 250μA | 20A Tc | 44nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SI7366DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7366dpt1ge3-datasheets-2897.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.7W | 1 | FET General Purpose Power | R-XDSO-C5 | 21 ns | 16ns | 16 ns | 58 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 1.7W Ta | 50A | 0.0055Ohm | 20V | N-Channel | 5.5m Ω @ 20A, 10V | 3V @ 250μA | 13A Ta | 25nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FQB3N25TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi3n25tu-datasheets-2516.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 250V | 3.13W Ta 45W Tc | N-Channel | 170pF @ 25V | 2.2Ohm @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 5.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4825DY-T1-GE3 | Vishay Siliconix | $0.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4825dyt1e3-datasheets-8412.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Single | 8-SO | 15 ns | 13ns | 13 ns | 97 ns | -11.5A | 25V | 30V | 1.5W Ta | 14mOhm | -30V | P-Channel | 14mOhm @ 11.5A, 10V | 3V @ 250μA | 8.1A Ta | 71nC @ 10V | 14 mΩ | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| FQPF5N50CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf5n50cydtu-datasheets-2768.pdf | 500V | 5A | TO-220-3 Full Pack | Lead Free | 2.27g | 3 | No | Single | 38W | 1 | 12 ns | 46ns | 48 ns | 50 ns | 5A | 30V | 38W Tc | 500V | N-Channel | 625pF @ 25V | 1.4 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQS4410TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqs4410tf-datasheets-2809.pdf | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | 30V | 2.5W Tc | N-Channel | 1280pF @ 25V | 13.5mOhm @ 10A, 10V | 2.5V @ 250μA | 10A Tc | 28nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5435BDC-T1-GE3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5435bdct1e3-datasheets-8514.pdf | 8-SMD, Flat Lead | Lead Free | 8 | Unknown | 45MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 8 ns | 12ns | 12 ns | 32 ns | -5.9A | 20V | SILICON | 30V | -3V | 1.3W Ta | 4.3A | -30V | P-Channel | 45m Ω @ 4.3A, 10V | 3V @ 250μA | 4.3A Ta | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FQPF5N50CTTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf5n50cydtu-datasheets-2768.pdf | TO-220-3 Full Pack | TO-220F | 500V | 38W Tc | N-Channel | 625pF @ 25V | 1.4Ohm @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA75309P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa75309d3-datasheets-2694.pdf | TO-220-3 | TO-220-3 | 55V | 55W Tc | N-Channel | 350pF @ 25V | 70mOhm @ 19A, 10V | 4V @ 250μA | 19A Tc | 24nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP19N20CTSTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2013 | TO-220-3 | TO-220-3 | 200V | 139W Tc | N-Channel | 1080pF @ 25V | 170mOhm @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2351DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2351dst1e3-datasheets-8087.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | No SVHC | 115MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1W | DUAL | GULL WING | 260 | 3 | Single | 30 | 1W | 1 | Other Transistors | 9 ns | 30ns | 30 ns | 32 ns | -3A | 12V | 20V | 20V | -1.5V | 2.2A | P-Channel | 250pF @ 10V | -1.5 V | 115m Ω @ 2.4A, 4.5V | 1.5V @ 250μA | 2.8A Tc | 5.1nC @ 5V | ||||||||||||||||||||||||||||||||
| FQI5N50CTU | ON Semiconductor | $5.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 500V | 73W Tc | N-Channel | 625pF @ 25V | 1.4Ohm @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD3P50TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu3p50tu-datasheets-4814.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 500V | 2.5W Ta 50W Tc | P-Channel | 660pF @ 25V | 4.9Ohm @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI2N30TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb2n30tm-datasheets-2718.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 300V | 3.13W Ta 40W Tc | N-Channel | 130pF @ 25V | 3.7Ohm @ 1.05A, 10V | 5V @ 250μA | 2.1A Tc | 5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB14N15TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb14n15tm-datasheets-2829.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 150V | 3.75W Ta 104W Tc | N-Channel | 715pF @ 25V | 210mOhm @ 7.2A, 10V | 4V @ 250μA | 14.4A Tc | 23nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB19N10LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb19n10ltm-datasheets-2798.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 100V | 3.75W Ta 75W Tc | N-Channel | 870pF @ 25V | 100mOhm @ 9.5A, 10V | 2V @ 250μA | 19A Tc | 18nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU6N50CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu6n50ctu-datasheets-2832.pdf | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 500V | 2.5W Ta 61W Tc | N-Channel | 700pF @ 25V | 1.2Ohm @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQI10N20CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi10n20ctu-datasheets-2799.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | I2PAK (TO-262) | 200V | 72W Tc | N-Channel | 510pF @ 25V | 360mOhm @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ102N15T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/ixys-ixta102n15t-datasheets-9411.pdf | TO-3P-3, SC-65-3 | 3 | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e3 | PURE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 455W | 1 | FET General Purpose Power | Not Qualified | 14ns | 22 ns | 25 ns | 102A | 20V | SILICON | DRAIN | SWITCHING | 455W Tc | 0.018Ohm | 750 mJ | 150V | N-Channel | 5220pF @ 25V | 18m Ω @ 500mA, 10V | 5V @ 1mA | 102A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| HUF75617D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf75617d3s-datasheets-4790.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 100V | 64W Tc | N-Channel | 570pF @ 25V | 90mOhm @ 16A, 10V | 4V @ 250μA | 16A Tc | 39nC @ 20V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76409P3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa76409p3-datasheets-2801.pdf | TO-220-3 | TO-220-3 | 60V | 49W Tc | N-Channel | 485pF @ 25V | 62mOhm @ 18A, 10V | 3V @ 250μA | 18A Tc | 15nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD10N20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd10n20tm-datasheets-2784.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 200V | 2.5W Ta 51W Tc | N-Channel | 670pF @ 25V | 360mOhm @ 3.8A, 10V | 5V @ 250μA | 7.6A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB19N10TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb19n10tm-datasheets-2785.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 100V | 3.75W Ta 75W Tc | N-Channel | 780pF @ 25V | 100mOhm @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQP19N10 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqp19n10-datasheets-2786.pdf | TO-220-3 | TO-220-3 | 100V | 75W Tc | N-Channel | 780pF @ 25V | 100mOhm @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF10N20 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf10n20-datasheets-2788.pdf | TO-220-3 Full Pack | 3 | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 200V | 200V | 40W Tc | TO-220AB | 9.5A | 38A | 0.36Ohm | 210 mJ | N-Channel | 670pF @ 25V | 360m Ω @ 3.4A, 10V | 5V @ 250μA | 6.8A Tc | 18nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FQD2N60TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu2n60tu-datasheets-4834.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 600V | 2.5W Ta 45W Tc | N-Channel | 350pF @ 25V | 4.7Ohm @ 1A, 10V | 5V @ 250μA | 2A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB10N20CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2003 | /files/onsemiconductor-fqb10n20ctm-datasheets-2790.pdf | 200V | 9.5A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 3 | Single | 72W | 1 | D2PAK (TO-263AB) | 510pF | 92ns | 72 ns | 70 ns | 9.5A | 30V | 200V | 72W Tc | 290mOhm | 200V | N-Channel | 510pF @ 25V | 360mOhm @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 360 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| FQP3N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/onsemiconductor-fqp3n60-datasheets-2791.pdf | 600V | 3A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 75W | 1 | FET General Purpose Power | Not Qualified | 12 ns | 30ns | 30 ns | 20 ns | 3A | 30V | SILICON | SWITCHING | 75W Tc | TO-220AB | 3A | 600V | N-Channel | 450pF @ 25V | 3.6 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| HUFA76413D3S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-hufa76413d3s-datasheets-2793.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 60V | 60W Tc | N-Channel | 645pF @ 25V | 49mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 20nC @ 10V | 4.5V 10V | ±16V |
