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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPS050N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips050n03lgakma1-datasheets-3006.pdf | TO-251-3 Stub Leads, IPak | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | TO-251AA | 50A | 350A | 0.0073Ohm | 60 mJ | N-Channel | 3200pF @ 15V | 5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPS090N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd090n03lgbtma1-datasheets-5506.pdf | TO-251-3 Stub Leads, IPak | 3 | 12 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 42W | 1 | Not Qualified | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 42W Tc | 280A | 70 mJ | N-Channel | 1600pF @ 15V | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 40A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| FQD10N20TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqd10n20tm-datasheets-2784.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 200V | 2.5W Ta 51W Tc | N-Channel | 670pF @ 25V | 360mOhm @ 3.8A, 10V | 5V @ 250μA | 7.6A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7485DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7485dpt1ge3-datasheets-2943.pdf | PowerPAK® SO-8 | Lead Free | 5 | Unknown | 7.3mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.8W | DUAL | C BEND | 260 | 8 | Single | 40 | 1 | Other Transistors | R-XDSO-C5 | 80 ns | 140ns | 140 ns | 360 ns | -20A | 8V | DRAIN | SWITCHING | 20V | -900mV | 12.5A | -20V | P-Channel | -900 mV | 7.3m Ω @ 20A, 4.5V | 900mV @ 1mA | 12.5A Ta | 150nC @ 5V | |||||||||||||||||||||||||||||||||
| IPP147N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp147n03lg-datasheets-2956.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | Matte Tin (Sn) | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 31W Tc | TO-220AB | 20A | 140A | 0.0217Ohm | 20 mJ | N-Channel | 1000pF @ 15V | 14.7m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Tc | 10nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSS131L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss131e6327-datasheets-5131.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 360mW | 1 | SOT-23-3 | 77pF | 110mA | 20V | 240V | 360mW Ta | N-Channel | 77pF @ 25V | 14Ohm @ 100mA, 10V | 1.8V @ 56μA | 110mA Ta | 3.1nC @ 10V | 14 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB055N03LGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp055n03lgxksa1-datasheets-8677.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | No SVHC | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 68W | 1 | Not Qualified | R-PSSO-G2 | 6.7 ns | 5.2ns | 4 ns | 25 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 68W Tc | 0.0078Ohm | 60 mJ | N-Channel | 3200pF @ 15V | 5.5m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPP096N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | /files/infineontechnologies-ipp096n03lg-datasheets-2972.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 42W Tc | TO-220AB | 35A | 245A | 0.0141Ohm | 40 mJ | N-Channel | 1600pF @ 15V | 9.6m Ω @ 30A, 10V | 2.2V @ 250μA | 35A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPS031N03L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips031n03lg-datasheets-2977.pdf | TO-251-3 Stub Leads, IPak | 3 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | e3 | MATTE TIN | NO | SINGLE | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 94W Tc | 90A | 400A | 0.004Ohm | 60 mJ | N-Channel | 5300pF @ 15V | 3.1m Ω @ 30A, 10V | 2.2V @ 250μA | 90A Tc | 51nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FQB20N06TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb20n06tm-datasheets-2981.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.75W Ta 53W Tc | N-Channel | 590pF @ 25V | 60mOhm @ 10A, 10V | 4V @ 250μA | 20A Tc | 15nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF14N15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf14n15-datasheets-2986.pdf | TO-220-3 Full Pack | TO-220F | 150V | 48W Tc | N-Channel | 715pF @ 25V | 210mOhm @ 4.9A, 10V | 4V @ 250μA | 9.8A Tc | 23nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS135N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd135n03lgatma1-datasheets-0106.pdf | TO-251-3 Stub Leads, IPak | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | 8541.29.00.95 | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 31W Tc | 30A | 210A | 0.0135Ohm | 20 mJ | N-Channel | 1000pF @ 15V | 13.5m Ω @ 30A, 10V | 2.2V @ 250μA | 30A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPS060N03LGAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | /files/infineontechnologies-ipd060n03lgatma1-datasheets-8101.pdf | TO-251-3 Stub Leads, IPak | 3 | 14 Weeks | 3 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 56W | 1 | Not Qualified | 5 ns | 3ns | 20 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 56W Tc | 0.009Ohm | 60 mJ | N-Channel | 2400pF @ 15V | 6m Ω @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTP90N075T2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtp90n075t2-datasheets-2997.pdf | TO-220-3 | 3 | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 180W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 28ns | 20 ns | 35 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 180W Tc | TO-220AB | 225A | 0.01Ohm | 400 mJ | 75V | N-Channel | 3290pF @ 25V | 10m Ω @ 25A, 10V | 4V @ 250μA | 90A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQPF17P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqpf17p06-datasheets-2933.pdf | TO-220-3 Full Pack | TO-220F | 60V | 39W Tc | P-Channel | 900pF @ 25V | 120mOhm @ 6A, 10V | 4V @ 250μA | 12A Tc | 27nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6463BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/vishaysiliconix-si6463bdqt1ge3-datasheets-2888.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | Unknown | 8 | yes | EAR99 | No | 1.05W | 8 | Single | 1.5W | 1 | 35 ns | 40ns | 40 ns | 190 ns | -7.4A | 8V | 20V | -800mV | -20V | P-Channel | 15m Ω @ 7.4A, 4.5V | 800mV @ 250μA | 6.2A Ta | 60nC @ 5V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIA411DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia411djt1ge3-datasheets-2938.pdf | PowerPAK® SC-70-6 | Lead Free | 3 | Unknown | 30mOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 12 ns | 65ns | 100 ns | 40 ns | -12A | 8V | SILICON | DRAIN | SWITCHING | 20V | 20V | -1V | 3.5W Ta 19W Tc | 8.8A | 20A | P-Channel | 1200pF @ 10V | -1 V | 30m Ω @ 5.9A, 4.5V | 1V @ 250μA | 12A Tc | 38nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| FQB3P20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi3p20tu-datasheets-2568.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 200V | 3.13W Ta 52W Tc | P-Channel | 250pF @ 25V | 2.7Ohm @ 1.4A, 10V | 5V @ 250μA | 2.8A Tc | 8nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5447DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5447dct1e3-datasheets-8482.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 8 | No | 1 | Single | 1206-8 ChipFET™ | 14 ns | 17ns | 17 ns | 44 ns | -48A | 8V | 20V | 1.3W Ta | 76mOhm | -20V | P-Channel | 76mOhm @ 3.5A, 4.5V | 450mV @ 250μA (Min) | 3.5A Ta | 10nC @ 4.5V | 76 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| HUF76013D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf76013d3s-datasheets-2606.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | 20V | 50W Tc | N-Channel | 624pF @ 20V | 22mOhm @ 20A, 10V | 3V @ 250μA | 20A Tc | 17nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1065X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1065xt1e3-datasheets-7774.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 32.006612mg | 156mOhm | 6 | 1 | Single | 1 | SC-89-6 | 480pF | 13 ns | 27ns | 27 ns | 45 ns | 1.18A | 8V | 12V | 236mW Ta | 204mOhm | -12V | P-Channel | 480pF @ 6V | 156mOhm @ 1.18A, 4.5V | 950mV @ 250μA | 10.8nC @ 5V | 156 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| FQI1P50TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | -500V | -1.5A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | No | Single | 3.13W | 9 ns | 25ns | 30 ns | 27 ns | 1.5A | 30V | 500V | 3.13W Ta 63W Tc | -500V | P-Channel | 350pF @ 25V | 10.5 Ω @ 750mA, 10V | 5V @ 250μA | 1.5A Tc | 14nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6410DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6410dqt1ge3-datasheets-2843.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 15 ns | 10ns | 10 ns | 70 ns | 7.8A | 20V | SILICON | SWITCHING | 1.5W Ta | 30A | 30V | N-Channel | 14m Ω @ 7.8A, 10V | 1V @ 250μA (Min) | 33nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI6433BDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6433bdqt1ge3-datasheets-2867.pdf | 8-TSSOP (0.173, 4.40mm Width) | Lead Free | 8 | Unknown | 40MOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.05W | 1 | Other Transistors | 45 ns | 60ns | 60 ns | 70 ns | -4.8A | 8V | SILICON | -1.5V | 1.05W Ta | 4A | 12V | P-Channel | -1.5 V | 40m Ω @ 4.8A, 4.5V | 1.5V @ 250μA | 4A Ta | 15nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| FQB9N08LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqb9n08ltm-datasheets-2885.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 80V | 3.75W Ta 40W Tc | N-Channel | 280pF @ 25V | 210mOhm @ 4.65A, 10V | 2V @ 250μA | 9.3A Tc | 6.1nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQD4N50TF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2000 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqu4n50tu-datasheets-2720.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 500V | 2.5W Ta 45W Tc | N-Channel | 460pF @ 25V | 2.7Ohm @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQB13N06LTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2001 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fqi13n06ltu-datasheets-2549.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 60V | 3.75W Ta 45W Tc | N-Channel | 350pF @ 25V | 110mOhm @ 6.8A, 10V | 2.5V @ 250μA | 13.6A Tc | 6.4nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7120DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7120dnt1ge3-datasheets-2907.pdf | PowerPAK® 1212-8 | Lead Free | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.5W | DUAL | C BEND | 260 | 8 | Single | 30 | 1.5W | 1 | FET General Purpose Powers | S-XDSO-C5 | 14 ns | 12ns | 12 ns | 50 ns | 10A | 20V | DRAIN | SWITCHING | 2.5V | 6.3A | 40A | 24 mJ | 60V | N-Channel | 19m Ω @ 10A, 10V | 3.5V @ 250μA | 6.3A Ta | 45nC @ 10V | |||||||||||||||||||||||||||||||||
| SI7459DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7459dpt1ge3-datasheets-2901.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 30 | 1.9W | 1 | Other Transistors | R-XDSO-C5 | 25 ns | 20ns | 20 ns | 180 ns | 13A | 25V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 30V | P-Channel | 6.8m Ω @ 22A, 10V | 3V @ 250μA | 13A Ta | 170nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| HUF75321D3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2002 | https://pdf.utmel.com/r/datasheets/onsemiconductor-huf75321d3-datasheets-2834.pdf | 55V | 20A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 2 | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 93W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 55ns | 66 ns | 47 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 93W Tc | TO-252AA | 0.036Ohm | 55V | N-Channel | 680pF @ 25V | 36m Ω @ 20A, 10V | 4V @ 250μA | 20A Tc | 44nC @ 20V | 10V | ±20V |
