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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR2905ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2905ztrr-datasheets-8653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | ULTRA LOW RESISTANCE | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 42A | 240A | 0.0145Ohm | 55 mJ | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3717TR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3717tr-datasheets-8682.pdf | 20V | 20A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | 8 | yes | GREEN | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 14ns | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Ta | MS-012AA | 160A | 0.0044Ohm | 32 mJ | N-Channel | 2890pF @ 10V | 4.4m Ω @ 20A, 10V | 2.45V @ 250μA | 20A Ta | 33nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RK7002T116 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/rohmsemiconductor-rk7002t116-datasheets-8658.pdf | 60V | 115mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | No SVHC | 7.5Ohm | 3 | yes | EAR99 | Copper, Silver, Tin | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 225mW | 1 | FET General Purpose Power | 12 ns | 20 ns | 115mA | 20V | 60V | SILICON | SWITCHING | 1.85V | 225mW Ta | 0.115A | 5 pF | 60V | N-Channel | 50pF @ 25V | 1.85 V | 7.5 Ω @ 500mA, 10V | 2.5V @ 1mA | 115mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR120Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | e0 | TIN LEAD | YES | SINGLE | GULL WING | 245 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 35W Tc | TO-252AA | 8.7A | 35A | 0.19Ohm | 18 mJ | N-Channel | 310pF @ 25V | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU120Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-251-3 Short Leads, IPak, TO-251AA | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 35W Tc | 8.7A | 35A | 0.19Ohm | 20 mJ | N-Channel | 310pF @ 25V | 190m Ω @ 5.2A, 10V | 4V @ 250μA | 8.7A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ44Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | TO-220-3 | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 80W Tc | TO-220AB | 51A | 200A | 0.0139Ohm | 86 mJ | N-Channel | 1420pF @ 25V | 13.9m Ω @ 31A, 10V | 4V @ 250μA | 51A Tc | 43nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5480DU-T1-E3 | Vishay Siliconix | $3.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5480dut1e3-datasheets-8552.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 3 | EAR99 | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | Not Qualified | R-XDSO-C3 | 10 ns | 10ns | 8 ns | 40 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 31W Tc | 30A | 30V | N-Channel | 1230pF @ 15V | 16m Ω @ 7.2A, 10V | 3V @ 250μA | 12A Tc | 34nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| NTD23N03RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | /files/onsemiconductor-ntd23n03r1g-datasheets-7763.pdf | 25V | 23A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 22.3W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 14.9ns | 9.9 ns | 17.1A | 20V | SILICON | DRAIN | SWITCHING | 1.14W Ta 22.3W Tc | 3.8A | 40A | 0.06Ohm | 25V | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 3.8A Ta 17.1A Tc | 3.76nC @ 4.5V | 4V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD60N02RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd60n02rt4-datasheets-8630.pdf | 24V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 | OBSOLETE (Last Updated: 2 days ago) | yes | not_compliant | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 240 | 4 | Single | 30 | 1.87W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 33ns | 33 ns | 19 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 58W Tc | 0.0105Ohm | 60 mJ | 25V | N-Channel | 1330pF @ 20V | 10.5m Ω @ 20A, 10V | 2V @ 250μA | 8.5A Ta 32A Tc | 14nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD70N03RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd70n03r1g-datasheets-7840.pdf | 25V | 70A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 1.87W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 1.3ns | 1.3 ns | 18.4 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tc | 62.8A | 140A | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 10A Ta 32A Tc | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI3812DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3812dvt1e3-datasheets-8226.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | 6 | 1 | 830mW | 6-TSOP | 10 ns | 30ns | 30 ns | 14 ns | 2.4A | 12V | 20V | 830mW Ta | 125mOhm | 20V | N-Channel | 125mOhm @ 2.4A, 4.5V | 600mV @ 250μA (Min) | 2A Ta | 4nC @ 4.5V | Schottky Diode (Isolated) | 125 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| 64-9144 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-649144-datasheets-8647.pdf | DirectFET™ Isometric ST | DIRECTFET™ ST | 1.3nF | 55A | 30V | 2.1W Ta 42W Tc | N-Channel | 1300pF @ 15V | 8.1mOhm @ 15A, 10V | 2.35V @ 250μA | 14A Ta 55A Tc | 17nC @ 4.5V | 8.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR2905ZTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2905ztrr-datasheets-8653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 110W Tc | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD14N03RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | DPAK | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 1.04W | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 115pF | 27ns | 2 ns | 9.6 ns | 2.5A | 20V | DRAIN | SWITCHING | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 11.4A | 28A | 70.4mOhm | 25V | 95 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF6608TR1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf6608-datasheets-6089.pdf | DirectFET™ Isometric ST | 30V | 2.1W Ta 42W Tc | N-Channel | 2120pF @ 15V | 9m Ω @ 13A, 10V | 3V @ 250μA | 13A Ta 55A Tc | 24nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD110N02R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntd110n02rt4g-datasheets-7703.pdf | 24V | 110A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 2.88W | 1 | FET General Purpose Power | Not Qualified | 39ns | 21 ns | 27 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 110W Tc | 12.5A | 0.0062Ohm | 120 mJ | 24V | N-Channel | 3440pF @ 20V | 4.6m Ω @ 20A, 10V | 2V @ 250μA | 12.5A Ta 110A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4845DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4845dyt1e3-datasheets-8427.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | 8-SO | 312pF | 3 ns | 10ns | 10 ns | 12 ns | -27A | 12V | 20V | 1.75W Ta 2.75W Tc | 210mOhm | -30V | P-Channel | 312pF @ 10V | 210mOhm @ 2A, 4.5V | 1.5V @ 250μA | 2.7A Tc | 4.5nC @ 4.5V | Schottky Diode (Isolated) | 210 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD40N03R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd40n03r1g-datasheets-7752.pdf | 25V | 40A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 2.1W | 19.5ns | 3.5 ns | 16.7 ns | 32A | 20V | 1.5W Ta 50W Tc | 25V | N-Channel | 584pF @ 20V | 16.5m Ω @ 10A, 10V | 2V @ 250μA | 7.8A Ta 32A Tc | 5.78nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD14N03R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd14n03r1g-datasheets-7738.pdf | 25V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 235 | 3 | Single | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 27ns | 27 ns | 9.6 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 1.04W Ta 20.8W Tc | 11.4A | 28A | 0.13Ohm | 25V | N-Channel | 115pF @ 20V | 95m Ω @ 5A, 10V | 2V @ 250μA | 2.5A Ta | 1.8nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD70N03R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd70n03r1g-datasheets-7840.pdf | 25V | 70A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | 2 | 4 | OBSOLETE (Last Updated: 3 days ago) | no | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 240 | 4 | Single | 30 | 1.87W | 1 | Not Qualified | R-PSSO-G2 | 1.3ns | 1.3 ns | 18.4 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 1.36W Ta 62.5W Tc | 0.013Ohm | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 10A Ta 32A Tc | 13.2nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTD110N02RT4 | ON Semiconductor | $5.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd110n02rt4g-datasheets-7703.pdf | 24V | 110A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 2.88W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 39ns | 21 ns | 27 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 110W Tc | 12.5A | 0.0062Ohm | 120 mJ | 24V | N-Channel | 3440pF @ 20V | 4.6m Ω @ 20A, 10V | 2V @ 250μA | 12.5A Ta 110A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4486EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4486eyt1e3-datasheets-8380.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | No SVHC | 25mOhm | 8 | No | Single | 1.8W | 1 | 8-SO | 20 ns | 10ns | 10 ns | 46 ns | 7.9A | 20V | 100V | 2V | 1.8W Ta | 25mOhm | 100V | N-Channel | 2 V | 25mOhm @ 7.9A, 10V | 2V @ 250μA (Min) | 5.4A Ta | 44nC @ 10V | 25 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5499DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5499dct1ge3-datasheets-5811.pdf | 8-SMD, Flat Lead | 8 | Single | 2.5W | 1 | 1206-8 ChipFET™ | 1.29nF | 70ns | 55 ns | 55 ns | 6A | 5V | 8V | 2.5W Ta 6.2W Tc | 36mOhm | 8V | P-Channel | 1290pF @ 4V | 36mOhm @ 5.1A, 4.5V | 800mV @ 250μA | 6A Tc | 35nC @ 8V | 36 mΩ | 1.5V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5433BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si5433bdct1e3-datasheets-8454.pdf | 8-SMD, Flat Lead | 8 | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 10 ns | 25ns | 25 ns | 80 ns | 4.8A | 8V | SILICON | 20V | 1.3W Ta | 0.037Ohm | -20V | P-Channel | 37m Ω @ 4.8A, 4.5V | 1V @ 250μA | 4.8A Ta | 22nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI5481DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5481dut1e3-datasheets-8531.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 8 | 1 | Single | PowerPAK® ChipFet Single | 1.61nF | 6 ns | 25ns | 167 ns | 90 ns | 12A | 8V | 20V | 3.1W Ta 17.8W Tc | 22mOhm | -20V | P-Channel | 1610pF @ 10V | 22mOhm @ 6.5A, 4.5V | 1V @ 250μA | 12A Tc | 50nC @ 8V | 22 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5485DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5485dut1e3-datasheets-8566.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 25mOhm | 1 | Single | PowerPAK® ChipFet Single | 1.1nF | 7 ns | 15ns | 80 ns | 50 ns | 12A | 12V | 20V | 3.1W Ta 31W Tc | 25mOhm | -20V | P-Channel | 1100pF @ 10V | 25mOhm @ 5.9A, 4.5V | 1.5V @ 250μA | 12A Tc | 42nC @ 8V | 25 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB125N02RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb125n02rt4g-datasheets-7703.pdf | 24V | 125A | D2PAK | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | 1.98W | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 2.72W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3.44nF | 39ns | 21 ns | 27 ns | 120.5A | 20V | DRAIN | SWITCHING | N-CHANNEL | 24V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 95A | 250A | 3.7mOhm | 120 mJ | 24V | 4.6 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| NTD23N03R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd23n03r1g-datasheets-7763.pdf | 25V | 23A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 22.3W | 14.9ns | 9.9 ns | 17.1A | 20V | 1.14W Ta 22.3W Tc | 25V | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 3.8A Ta 17.1A Tc | 3.76nC @ 4.5V | 4V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB90N02T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp90n02g-datasheets-7816.pdf | 24V | 90A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 85W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 90ns | 60 ns | 28 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 85W Tc | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2120pF @ 20V | 5.8m Ω @ 90A, 10V | 3V @ 250μA | 90A Ta | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTP90N02 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntp90n02g-datasheets-7816.pdf | 24V | 90A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 85W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90ns | 60 ns | 28 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2120pF @ 20V | 5.8m Ω @ 90A, 10V | 3V @ 250μA | 90A Ta | 29nC @ 4.5V | 4.5V 10V | ±20V |
