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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB45N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb45n06lt4g-datasheets-0452.pdf | 60V | 45A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | GULL WING | 240 | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 341ns | 158 ns | 36 ns | 45A | 15V | SILICON | DRAIN | SWITCHING | 2.4W Ta 125W Tj | 150A | 0.028Ohm | 240 mJ | 60V | N-Channel | 1700pF @ 25V | 28m Ω @ 22.5A, 5V | 2V @ 250μA | 45A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||
| STE250NS10 | STMicroelectronics | $47.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste250ns10-datasheets-9087.pdf | 100V | 220A | ISOTOP | 38.2mm | 9.1mm | 25.5mm | Lead Free | 4 | No SVHC | 5.5mOhm | 4 | yes | EAR99 | No | UPPER | UNSPECIFIED | STE250 | 4 | 500W | 1 | FET General Purpose Power | 110 ns | 380ns | 300 ns | 1.1 μs | 220A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3V | 500W Tc | 880A | 800 mJ | 100V | N-Channel | 31000pF @ 25V | 5.5m Ω @ 125A, 10V | 4V @ 250μA | 220A Tc | 900nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| NTB75N03RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp75n03r-datasheets-6626.pdf | 25V | 75A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | not_compliant | 8541.29.00.75 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 74.4W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 18.4 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 1.25W Ta 74.4W Tc | 9.7A | 225A | 71.7 mJ | 25V | N-Channel | 1333pF @ 20V | 8m Ω @ 20A, 10V | 2V @ 250μA | 9.7A Ta 75A Tc | 13.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRF7834 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf7834-datasheets-9090.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | NOT SPECIFIED | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.5W Ta | MS-012AA | 19A | 160A | 0.0045Ohm | 25 mJ | N-Channel | 3710pF @ 15V | 4.5m Ω @ 19A, 10V | 2.25V @ 250μA | 19A Ta | 44nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NTD20N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd20n06lt4g-datasheets-3374.pdf | 60V | 20A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | EAR99 | not_compliant | 3 | Single | 60W | 98ns | 62 ns | 25 ns | 20A | 15V | 1.36W Ta 60W Tj | 60V | N-Channel | 990pF @ 25V | 48m Ω @ 10A, 5V | 2V @ 250μA | 20A Ta | 32nC @ 5V | 5V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTF3055-100T3LF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntf3055100t1g-datasheets-5112.pdf | 60V | 3A | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 14ns | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.3W Ta | 3A | 9A | 0.11Ohm | 74 mJ | N-Channel | 455pF @ 25V | 110m Ω @ 1.5A, 10V | 4V @ 250μA | 3A Ta | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STE70NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste70nm50-datasheets-9099.pdf | 500V | 70A | ISOTOP | 38.2mm | 9.1mm | 25.5mm | Lead Free | 4 | No SVHC | 50mOhm | 4 | EAR99 | No | UPPER | UNSPECIFIED | STE70 | 4 | 600W | 1 | FET General Purpose Power | 51 ns | 58ns | 46 ns | 30A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 600W Tc | 280A | 500V | N-Channel | 7500pF @ 25V | 50m Ω @ 30A, 10V | 5V @ 250μA | 70A Tc | 266nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| NTD3055-150T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | /files/onsemiconductor-nvd3055150t4gvf01-datasheets-0143.pdf | 60V | 9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 28.8W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 37.1ns | 23 ns | 12.2 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta 28.8W Tj | 9A | 27A | 0.15Ohm | 30 mJ | 60V | N-Channel | 280pF @ 25V | 150m Ω @ 4.5A, 10V | 4V @ 250μA | 9A Ta | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTB22N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb22n06lt4-datasheets-9102.pdf | 60V | 22A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 115ns | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tj | 66A | 0.065Ohm | 72 mJ | N-Channel | 690pF @ 25V | 65m Ω @ 11A, 5V | 2V @ 250μA | 22A Ta | 20nC @ 5V | 5V | ±10V | |||||||||||||||||||||||||||||||||||
| NTTS2P02R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntts2p02r2-datasheets-9104.pdf | -20V | -2.4A | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | Contains Lead | 8 | 8 | OBSOLETE (Last Updated: 1 week ago) | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | DUAL | GULL WING | 240 | 8 | 30 | 780mW | 1 | Other Transistors | Not Qualified | 31ns | 31 ns | 33 ns | 2.4A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 780mW Ta | 0.09Ohm | -20V | P-Channel | 550pF @ 16V | 90m Ω @ 2.4A, 4.5V | 1.4V @ 250μA | 2.4A Ta | 18nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| NTMS4P01R2 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntms4p01r2-datasheets-9106.pdf | -12V | -4.5A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 240 | 8 | 30 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 3.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 790mW Ta | 2.32A | 0.045Ohm | 400 pF | P-Channel | 1850pF @ 9.6V | 45m Ω @ 4.5A, 4.5V | 1.15V @ 250μA | 3.4A Ta | 35nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||
| IRLZ44Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-220-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 80W Tc | TO-220AB | 51A | 204A | 0.0135Ohm | 78 mJ | N-Channel | 1620pF @ 25V | 13.5m Ω @ 31A, 10V | 3V @ 250μA | 51A Tc | 36nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR2905ZTR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfr2905ztrr-datasheets-8653.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 110W Tc | TO-252AA | 42A | 240A | 0.0145Ohm | 82 mJ | N-Channel | 1380pF @ 25V | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 42A Tc | 44nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTD30N02T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd30n02t4-datasheets-9029.pdf | 24V | 30A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 235 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 28ns | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tj | 100A | 0.0145Ohm | 50 mJ | N-Channel | 1000pF @ 20V | 14.5m Ω @ 30A, 10V | 3V @ 250μA | 30A Ta | 20nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRL3714ZSTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineon-irl3714zstrl-datasheets-0009.pdf | 20V | 36A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | EAR99 | 35W | 13ns | 36A | N-Channel | 550pF @ 10V | 16m Ω @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB4302T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb4302t4g-datasheets-7769.pdf | 30V | 74A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 80W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 70ns | 30 ns | 32 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | 175A | 0.0093Ohm | 722 mJ | 30V | N-Channel | 2400pF @ 24V | 9.3m Ω @ 37A, 10V | 3V @ 250μA | 74A Tc | 28nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTB22N06T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | /files/onsemiconductor-ntb22n06t4-datasheets-9038.pdf | 60V | 22A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | not_compliant | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 3 | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 39ns | 22A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tj | 66A | 0.06Ohm | 72 mJ | N-Channel | 700pF @ 25V | 60m Ω @ 11A, 10V | 4V @ 250μA | 22A Ta | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTB27N06LT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb27n06lt4-datasheets-9040.pdf | 60V | 27A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 115ns | 27A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 88.2W Tc | 80A | 0.048Ohm | 94 mJ | N-Channel | 990pF @ 25V | 48m Ω @ 13.5A, 5V | 2V @ 250μA | 27A Ta | 32nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||
| STE180NE10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste180ne10-datasheets-9042.pdf | 100V | 180A | ISOTOP | Lead Free | 4 | No SVHC | 4 | EAR99 | AVALANCHE RATED | not_compliant | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | STE1 | 4 | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | 2.5kV | 600ns | 440 ns | 430 ns | 180A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3V | 360W Tc | 360A | 6Ohm | 720 mJ | 100V | N-Channel | 21000pF @ 25V | 3 V | 6 Ω @ 40A, 10V | 4V @ 250μA | 180A Tc | 795nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| IRLR3714ZTRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 20V | 35W Tc | N-Channel | 560pF @ 10V | 15mOhm @ 15A, 10V | 2.55V @ 250μA | 37A Tc | 7.1nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR4343TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irlr4343trr-datasheets-8952.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 55V | 79W Tc | N-Channel | 740pF @ 50V | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 26A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD60N03T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd60n03t4-datasheets-9060.pdf | 28V | 60A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 3 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | 18ns | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | 120A | 0.0075Ohm | N-Channel | 2150pF @ 24V | 7.5m Ω @ 30A, 10V | 3V @ 250μA | 60A Tc | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NTB30N06T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb30n06t4-datasheets-9062.pdf | 60V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 88.2W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 36ns | 31 ns | 24 ns | 27A | 20V | SILICON | DRAIN | SWITCHING | 88.2W Tc | 80A | 0.042Ohm | 101 mJ | 60V | N-Channel | 1200pF @ 25V | 42m Ω @ 15A, 10V | 4V @ 250μA | 27A Ta | 46nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTB35N15T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb35n15t4g-datasheets-3686.pdf | 150V | 37A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 3 | EAR99 | not_compliant | e0 | Tin/Lead (Sn80Pb20) | YES | GULL WING | 240 | 3 | Single | 30 | 178W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 125ns | 120 ns | 90 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 178W Tj | 111A | 0.05Ohm | 700 mJ | 150V | N-Channel | 3200pF @ 25V | 50m Ω @ 18.5A, 10V | 4V @ 250μA | 37A Ta | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| NTF3055L175T3LF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntf3055l175t3lf-datasheets-9067.pdf | 60V | 2A | TO-261-4, TO-261AA | Contains Lead | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | 21ns | 2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.3W Ta | 2A | 6A | 0.175Ohm | 65 mJ | N-Channel | 270pF @ 25V | 175m Ω @ 1A, 5V | 2V @ 250μA | 2A Ta | 10nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||
| STE26NA90 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-ste26na90-datasheets-9069.pdf | 900V | 26A | ISOTOP | Contains Lead | 4 | 4 | EAR99 | UL RECOGNIZED | No | UPPER | UNSPECIFIED | STE26 | 4 | 1 | FET General Purpose Power | 40 ns | 52ns | 25 ns | 26A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 450W Tc | 0.3Ohm | 3000 mJ | N-Channel | 1770pF @ 25V | 300m Ω @ 13A, 10V | 3.75V @ 1mA | 26A Tc | 660nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRL8113S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2004 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | e0 | TIN LEAD | YES | SINGLE | GULL WING | 225 | 30 | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 110W Tc | 42A | 420A | 0.006Ohm | 220 mJ | N-Channel | 2840pF @ 15V | 6m Ω @ 21A, 10V | 2.25V @ 250μA | 105A Tc | 35nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRL3715Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-220-3 | 20V | 45W Tc | N-Channel | 870pF @ 10V | 11m Ω @ 15A, 10V | 2.55V @ 250μA | 50A Tc | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3714ZSTRR | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2003 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK | 20V | 35W Tc | N-Channel | 550pF @ 10V | 16mOhm @ 15A, 10V | 2.55V @ 250μA | 36A Tc | 7.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3705ZL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | e0 | TIN LEAD | NO | SINGLE | 225 | 30 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 130W Tc | 75A | 340A | 0.008Ohm | 180 mJ | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V |
