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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTB125N02RT4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntb125n02rt4g-datasheets-7703.pdf | 24V | 125A | D2PAK | Contains Lead | 2 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn80Pb20) | 1.98W | GULL WING | 235 | 3 | Single | NOT SPECIFIED | 2.72W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 3.44nF | 39ns | 21 ns | 27 ns | 120.5A | 20V | DRAIN | SWITCHING | N-CHANNEL | 24V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 95A | 250A | 3.7mOhm | 120 mJ | 24V | 4.6 mΩ | |||||||||||||||||||||||||||||||||||||||||
| NTD23N03R-001 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntd23n03r1g-datasheets-7763.pdf | 25V | 23A | TO-251-3 Short Leads, IPak, TO-251AA | Contains Lead | Single | 22.3W | 14.9ns | 9.9 ns | 17.1A | 20V | 1.14W Ta 22.3W Tc | 25V | N-Channel | 225pF @ 20V | 45m Ω @ 6A, 10V | 2V @ 250μA | 3.8A Ta 17.1A Tc | 3.76nC @ 4.5V | 4V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTB90N02T4 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntp90n02g-datasheets-7816.pdf | 24V | 90A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | GULL WING | 240 | 3 | Single | 30 | 85W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 90ns | 60 ns | 28 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 85W Tc | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2120pF @ 20V | 5.8m Ω @ 90A, 10V | 3V @ 250μA | 90A Ta | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NTP90N02 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2009 | /files/onsemiconductor-ntp90n02g-datasheets-7816.pdf | 24V | 90A | TO-220-3 | Contains Lead | 3 | EAR99 | not_compliant | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | 240 | 3 | Single | 30 | 85W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 90ns | 60 ns | 28 ns | 90A | 20V | SILICON | DRAIN | SWITCHING | 85W Tc | TO-220AB | 200A | 0.0058Ohm | 733 mJ | 24V | N-Channel | 2120pF @ 20V | 5.8m Ω @ 90A, 10V | 3V @ 250μA | 90A Ta | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| 2N7008 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/onsemiconductor-2n7008-datasheets-8597.pdf | 60V | 150mA | TO-226-3, TO-92-3 (TO-226AA) | Contains Lead | 3 | 3 | EAR99 | not_compliant | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | BOTTOM | NOT SPECIFIED | 3 | NOT SPECIFIED | 1W | 1 | FET General Purpose Power | Not Qualified | 150mA | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 400mW Ta | 0.15A | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 50mA, 5V | 150mA Ta | 5V 10V | 40V | ||||||||||||||||||||||||||||||||||||||||||||
| SI1450DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si1450dht1e3-datasheets-8067.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 7.512624mg | No SVHC | 58mOhm | 6 | No | 1 | Single | 1.56W | 1 | SC-70-6 (SOT-363) | 535pF | 8 ns | 73ns | 73 ns | 18 ns | 4A | 5V | 8V | 8V | 1V | 1.56W Ta 2.78W Tc | 47mOhm | N-Channel | 535pF @ 4V | 1 V | 47mOhm @ 4A, 4.5V | 1V @ 250μA | 4.53A Ta 6.04A Tc | 7.05nC @ 5V | 47 mΩ | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||
| SI5401DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5401dct1e3-datasheets-8433.pdf | 8-SMD, Flat Lead | 84.99187mg | 8 | 1 | Single | 1.3W | 1 | 1206-8 ChipFET™ | 10 ns | 25ns | 25 ns | 115 ns | 5.2A | 8V | 20V | 1.3W Ta | 32mOhm | -20V | P-Channel | 32mOhm @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 25nC @ 4.5V | 32 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4833ADY-T1-E3 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4833adyt1e3-datasheets-8435.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | 1 | 1 | 8-SO | 750pF | 7 ns | 11ns | 11 ns | 19 ns | 3.85A | 20V | 30V | 1.93W Ta 2.75W Tc | 72mOhm | -30V | P-Channel | 750pF @ 15V | 72mOhm @ 3.6A, 10V | 2.5V @ 250μA | 4.6A Tc | 15nC @ 10V | Schottky Diode (Isolated) | 72 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5406DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5406dct1e3-datasheets-8438.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | 8 | 1 | Single | 1.3W | 1 | 1206-8 ChipFET™ | 17 ns | 46ns | 46 ns | 54 ns | 6.9A | 8V | 12V | 1.3W Ta | 20mOhm | 12V | N-Channel | 20mOhm @ 6.9A, 4.5V | 600mV @ 1.2mA (Min) | 6.9A Ta | 20nC @ 4.5V | 20 mΩ | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI5402BDC-T1-E3 | Vishay Siliconix | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402bdct1e3-datasheets-8444.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | 8 | No SVHC | 35mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 27 ns | 6.7A | 20V | SILICON | 20V | 1.3W Ta | 4.9A | 20A | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 3V @ 250μA | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI4835BDY-T1-E3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4835bdyt1e3-datasheets-8440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 8 | 1 | Single | 1.5W | 1 | 8-SO | 15 ns | 13ns | 13 ns | 60 ns | 7.4A | 25V | 30V | 1.5W Ta | 18mOhm | -30V | P-Channel | 18mOhm @ 9.6A, 10V | 3V @ 250μA | 7.4A Ta | 37nC @ 5V | 18 mΩ | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5476DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5476dut1ge3-datasheets-5799.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 8 | 1 | Single | PowerPAK® ChipFet Single | 1.1nF | 10 ns | 15ns | 10 ns | 22 ns | 12A | 20V | 60V | 3.1W Ta 31W Tc | 34mOhm | 60V | N-Channel | 1100pF @ 30V | 34mOhm @ 4.6A, 10V | 3V @ 250μA | 12A Tc | 32nC @ 10V | 34 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4840DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4840dyt1e3-datasheets-8414.pdf | 40V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 8 | 1 | Single | 1.56W | 1 | 8-SO | 15 ns | 10ns | 20 ns | 50 ns | 14A | 20V | 40V | 1.56W Ta | 9mOhm | 40V | N-Channel | 9mOhm @ 14A, 10V | 3V @ 250μA | 10A Ta | 28nC @ 5V | 9 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI5463EDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5463edct1e3-datasheets-8486.pdf | 8-SMD, Flat Lead | 84.99187mg | 8 | 1 | Single | 1.25W | 1 | 1206-8 ChipFET™ | 1.85 μs | 3.2μs | 3.2 μs | 1.9 μs | 3.8A | 12V | 20V | 1.25W Ta | 62mOhm | -20V | P-Channel | 62mOhm @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.8A Ta | 15nC @ 4.5V | 62 mΩ | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4876DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si4876dyt1e3-datasheets-8417.pdf | 20V | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 34mOhm | 8 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 8 | Single | NOT SPECIFIED | 3.6W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 30ns | 30 ns | 175 ns | 21A | 12V | SILICON | SWITCHING | 1.6W Ta | 14A | 20V | N-Channel | 5m Ω @ 21A, 4.5V | 600mV @ 250μA (Min) | 14A Ta | 80nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SI5447DC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5447dct1e3-datasheets-8482.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 84.99187mg | 8 | 1 | Single | 1.3W | 1206-8 ChipFET™ | 14 ns | 17ns | 17 ns | 44 ns | -4.8A | 8V | 20V | 1.3W Ta | 76mOhm | -20V | P-Channel | 76mOhm @ 3.5A, 4.5V | 450mV @ 250μA (Min) | 3.5A Ta | 10nC @ 4.5V | 76 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI5445BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si5445bdct1e3-datasheets-8498.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | 8 | 33mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.3W | 1 | Other Transistors | 12 ns | 22ns | 22 ns | 75 ns | 5.2A | 8V | SILICON | 1.3W Ta | -8V | P-Channel | 33m Ω @ 5.2A, 4.5V | 1V @ 250μA | 5.2A Ta | 21nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||
| SI5484DU-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5484dut1e3-datasheets-8519.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 1 | Single | PowerPAK® ChipFet Single | 1.6nF | 5 ns | 15ns | 10 ns | 35 ns | 12A | 12V | 20V | 3.1W Ta 31W Tc | 16mOhm | 20V | N-Channel | 1600pF @ 10V | 16mOhm @ 7.6A, 4.5V | 2V @ 250μA | 12A Tc | 55nC @ 10V | 16 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI5486DU-T1-E3 | Vishay Siliconix | $3.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5486dut1e3-datasheets-8521.pdf | 8-PowerVDFN | 3mm | 750μm | 1.9mm | 1 | Single | 8-PowerPak® ChipFet (3x1.9) | 2.1nF | 7 ns | 15ns | 10 ns | 55 ns | 12A | 8V | 20V | 3.1W Ta 31W Tc | 15mOhm | N-Channel | 2100pF @ 10V | 15mOhm @ 7.7A, 4.5V | 1V @ 250μA | 12A Tc | 54nC @ 8V | 15 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI5435BDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5435bdct1e3-datasheets-8514.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | Unknown | 45mOhm | 8 | No | Single | 1.3W | 1 | 1206-8 ChipFET™ | 8 ns | 12ns | 12 ns | 32 ns | -5.9A | 20V | 30V | 1.3W Ta | 45mOhm | 30V | P-Channel | -1 V | 45mOhm @ 4.3A, 10V | 3V @ 250μA | 4.3A Ta | 24nC @ 10V | 45 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4825DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4825dyt1e3-datasheets-8412.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | Unknown | 14mOhm | 8 | No | 1 | Single | 1.5W | 1 | 8-SO | 15 ns | 13ns | 13 ns | 97 ns | -9.2A | 25V | 30V | 1.5W Ta | 14mOhm | -30V | P-Channel | -3 V | 14mOhm @ 11.5A, 10V | 3V @ 250μA | 8.1A Ta | 71nC @ 10V | 14 mΩ | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SI4396DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4396dyt1ge3-datasheets-3616.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 11.5mOhm | 8 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 30 | 1 | 29ns | 8 ns | 24 ns | 16A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 3.1W Ta 5.4W Tc | 12.3A | 40A | 20 mJ | 30V | N-Channel | 1675pF @ 15V | 11.5m Ω @ 10A, 10V | 2.6V @ 250μA | 16A Tc | 45nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SI4462DY-T1-E3 | Vishay Siliconix | $0.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4462dyt1e3-datasheets-8318.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | Unknown | 17mOhm | 8 | No | 1.3W | Single | 1.3W | 1 | 8-SO | 10 ns | 12ns | 12 ns | 10 ns | 1.5A | 20V | 200V | 480mOhm | 200V | N-Channel | 4 V | 480mOhm @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 9nC @ 10V | 480 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4446DY-T1-E3 | Vishay Siliconix | $1.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4446dyt1e3-datasheets-8321.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | No SVHC | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.1W | 1 | 7 ns | 11ns | 11 ns | 27 ns | 5.2A | 12V | SILICON | SWITCHING | 1.6V | 1.1W Ta | 3.9A | 30A | 40V | N-Channel | 700pF @ 20V | 1.6 V | 40m Ω @ 5.2A, 10V | 1.6V @ 250μA | 3.9A Ta | 12nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| IXTA76N075T | IXYS | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp76n075t-datasheets-7635.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSSO-G2 | 40ns | 33 ns | 38 ns | 76A | SILICON | DRAIN | SWITCHING | 176W Tc | 210A | 0.012Ohm | 500 mJ | 75V | N-Channel | 2580pF @ 25V | 12m Ω @ 25A, 10V | 4V @ 50μA | 76A Tc | 57nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SI4418DY-T1-E3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4418dyt1e3-datasheets-8315.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | 15 ns | 15ns | 15 ns | 40 ns | 3A | 20V | SILICON | SWITCHING | 1.5W Ta | 0.13Ohm | 200V | N-Channel | 130m Ω @ 3A, 10V | 4V @ 250μA | 2.3A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI4466DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4466dyt1e3-datasheets-8333.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | Unknown | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | 20 ns | 15ns | 15 ns | 150 ns | 13.5A | 12V | SILICON | SWITCHING | 600mV | 1.5W Ta | 9.5A | 50A | 20V | N-Channel | 600 mV | 9m Ω @ 13.5A, 4.5V | 1.4V @ 250μA | 9.5A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| SI4403BDY-T1-E3 | Vishay Siliconix | $0.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4403bdyt1e3-datasheets-8348.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 17mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 30 | 1.35W | 1 | 25 ns | 45ns | 45 ns | 150 ns | 7.3A | 8V | SILICON | 1.35W Ta | 20V | P-Channel | 17m Ω @ 9.9A, 4.5V | 1V @ 350μA | 7.3A Ta | 50nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| SI4484EY-T1-E3 | Vishay Siliconix | $1.37 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4484eyt1e3-datasheets-8352.pdf | 100V | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 506.605978mg | Unknown | 34mOhm | 8 | 1 | Single | 1.8W | 1 | 8-SO | 16 ns | 10ns | 10 ns | 35 ns | 6.9A | 20V | 100V | 2V | 1.8W Ta | 34mOhm | 100V | N-Channel | 2 V | 34mOhm @ 6.9A, 10V | 2V @ 250μA (Min) | 4.8A Ta | 30nC @ 10V | 34 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI4831DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4831dyt1e3-datasheets-8366.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2W | 1 | Not Qualified | 13 ns | 15ns | 14 ns | 37 ns | 5A | 20V | SILICON | 30V | 30V | 2W Ta | 5A | 0.045Ohm | P-Channel | 45m Ω @ 5A, 10V | 1V @ 250μA (Min) | 20nC @ 5V | Schottky Diode (Isolated) | 4.5V 10V | ±20V |
