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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Lead Free | Number of Terminations | Factory Lead Time | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA200N075T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n075t-datasheets-7507.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSSO-G2 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | 540A | 0.005Ohm | 750 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IXTC200N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixtc200n10t-datasheets-7509.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | Not Qualified | 45 ns | 101A | SILICON | ISOLATED | SWITCHING | 160W Tc | 500A | 1500 mJ | 100V | N-Channel | 9400pF @ 25V | 6.3m Ω @ 50A, 10V | 4.5V @ 250μA | 101A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||
| IXTA70N085T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta70n085t-datasheets-7511.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 176W | 1 | Not Qualified | R-PSSO-G2 | 72ns | 40 ns | 40 ns | 70A | SILICON | DRAIN | SWITCHING | 176W Tc | 190A | 0.0135Ohm | 500 mJ | 85V | N-Channel | 2570pF @ 25V | 13.5m Ω @ 25A, 10V | 4V @ 50μA | 70A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA88N085T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta88n085t-datasheets-7513.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G2 | 54ns | 29 ns | 42 ns | 88A | SILICON | DRAIN | SWITCHING | 230W Tc | 240A | 0.011Ohm | 500 mJ | 85V | N-Channel | 3140pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 100μA | 88A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IXTC220N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc220n055t-datasheets-7515.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 62ns | 53 ns | 53 ns | 130A | SILICON | ISOLATED | SWITCHING | 150W Tc | 600A | 0.0044Ohm | 500 mJ | 55V | N-Channel | 7200pF @ 25V | 4.4m Ω @ 25A, 10V | 4V @ 250μA | 130A Tc | 158nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXTA200N085T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t7-datasheets-7517.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 5MOhm | yes | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G6 | 80ns | 64 ns | 65 ns | 200A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 480W Tc | 540A | 1 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IXTA180N085T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta180n085t7-datasheets-7519.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 430W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 70ns | 65 ns | 55 ns | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 480A | 0.0055Ohm | 1000 mJ | 85V | N-Channel | 7500pF @ 25V | 5.5m Ω @ 25A, 10V | 4V @ 250μA | 180A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||
| IXTA88N085T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta88n085t7-datasheets-7521.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G6 | 54ns | 29 ns | 42 ns | 88A | SILICON | DRAIN | SWITCHING | 230W Tc | 240A | 0.011Ohm | 500 mJ | 85V | N-Channel | 3140pF @ 25V | 11m Ω @ 25A, 10V | 4V @ 100μA | 88A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXTA220N055T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta220n055t7-datasheets-7522.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 62ns | 53 ns | 53 ns | 220A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 430W Tc | 600A | 0.004Ohm | 1000 mJ | 55V | N-Channel | 7200pF @ 25V | 4m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 158nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IXTC220N075T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc220n075t-datasheets-7524.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 150W | 1 | Not Qualified | 65ns | 47 ns | 55 ns | 115A | SILICON | ISOLATED | SWITCHING | 150W Tc | 600A | 0.005Ohm | 1000 mJ | 75V | N-Channel | 7700pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 115A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXTA200N075T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n075t7-datasheets-7526.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 430W | 1 | Not Qualified | R-PSFM-G6 | 57ns | 52 ns | 54 ns | 200A | SILICON | DRAIN | SWITCHING | 430W Tc | 540A | 0.005Ohm | 500 mJ | 75V | N-Channel | 6800pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTC160N10T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtc160n10t-datasheets-7528.pdf | ISOPLUS220™ | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 140W | 1 | Not Qualified | 61ns | 42 ns | 49 ns | 83A | SILICON | ISOLATED | 140W Tc | 0.0075Ohm | 500 mJ | 100V | N-Channel | 6600pF @ 25V | 7.5m Ω @ 25A, 10V | 4.5V @ 250μA | 83A Tc | 132nC @ 10V | 10V | ±20V | ||||||||||||||||||||||
| IXTA240N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchT2™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t-datasheets-7497.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSFM-G6 | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | 650A | 0.0036Ohm | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA182N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta182n055t-datasheets-7499.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSFM-G6 | 35ns | 38 ns | 53 ns | 182A | SILICON | DRAIN | SWITCHING | 360W Tc | 490A | 0.005Ohm | 1000 mJ | 55V | N-Channel | 4850pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 182A Tc | 114nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA200N085T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta200n085t-datasheets-7501.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 80ns | 64 ns | 65 ns | 200A | SILICON | DRAIN | SWITCHING | 480W Tc | 540A | 0.005Ohm | 1000 mJ | 85V | N-Channel | 7600pF @ 25V | 5m Ω @ 25A, 10V | 4V @ 250μA | 200A Tc | 152nC @ 10V | 10V | ±20V | ||||||||||||||||||
| IPB04N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb04n03lb-datasheets-7307.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 107W Tc | N-Channel | 5203pF @ 15V | 3.5m Ω @ 55A, 10V | 2V @ 70μA | 80A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXFT20N60Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixft20n60q-datasheets-7472.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 20ns | 20 ns | 45 ns | 20A | 30V | SILICON | DRAIN | SWITCHING | 300W Tc | 80A | 0.35Ohm | 1500 mJ | 600V | N-Channel | 3300pF @ 25V | 350m Ω @ 10A, 10V | 4.5V @ 4mA | 20A Tc | 90nC @ 10V | 10V | ±30V | ||||||||||||||||||
| IXFX66N50Q2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/ixys-ixfx66n50q2-datasheets-7474.pdf | TO-247-3 | Lead Free | 3 | 3 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 735W | 1 | FET General Purpose Power | Not Qualified | 16ns | 10 ns | 60 ns | 66A | 30V | SILICON | DRAIN | SWITCHING | 735W Tc | 264A | 0.08Ohm | 4000 mJ | 500V | N-Channel | 9125pF @ 25V | 80m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 200nC @ 10V | 10V | ±30V | |||||||||||||||||||
| IXFV110N10P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh110n10p-datasheets-5469.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | 25ns | 25 ns | 65 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.015Ohm | 1000 mJ | 100V | N-Channel | 3550pF @ 25V | 15m Ω @ 500mA, 10V | 5V @ 4mA | 110A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXFV96N15PS | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n15p-datasheets-0503.pdf | PLUS-220SMD | 2 | 3 | yes | EAR99 | AVALANCHE ENERGY RATED | GULL WING | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 33ns | 18 ns | 66 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 250A | 0.024Ohm | 1000 mJ | 150V | N-Channel | 3500pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXFV74N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixfh74n20p-datasheets-3542.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 480W | 1 | FET General Purpose Power | Not Qualified | 21ns | 21 ns | 60 ns | 74A | 20V | SILICON | DRAIN | SWITCHING | 480W Tc | 200A | 1000 mJ | 200V | N-Channel | 3300pF @ 25V | 34m Ω @ 37A, 10V | 5V @ 4mA | 74A Tc | 107nC @ 10V | 10V | ±20V | |||||||||||||||||||
| BSP125L6327HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2003 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | 4 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 4 | 1.8W | 1 | 7.7 ns | 14.4ns | 110 ns | 20 ns | 120mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 1.8W Ta | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||
| IXFV96N20P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ HiPerFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh96n20p-datasheets-3565.pdf | TO-220-3, Short Tab | 3 | 3 | yes | EAR99 | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 600W | 1 | Not Qualified | 30ns | 30 ns | 75 ns | 96A | 20V | SILICON | DRAIN | SWITCHING | 600W Tc | 225A | 0.024Ohm | 1500 mJ | 200V | N-Channel | 4800pF @ 25V | 24m Ω @ 500mA, 10V | 5V @ 4mA | 96A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||
| BSP300 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp300l6327husa1-datasheets-7035.pdf | TO-261-4, TO-261AA | 4 | EAR99 | AVALANCHE RATED | 8541.29.00.95 | YES | DUAL | GULL WING | 255 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | DRAIN | 800V | 800V | 1.8W Ta | 0.19A | 0.76A | 36 mJ | N-Channel | 230pF @ 25V | 20 Ω @ 190mA, 10V | 4V @ 1mA | 190mA Ta | 10V | ±20V | |||||||||||||||||||||||||
| IXFP5N50PM | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfp5n50pm-datasheets-7491.pdf | TO-220-3 | 3 | 8 Weeks | yes | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 38W | 1 | Not Qualified | R-PSFM-T3 | 28ns | 26 ns | 65 ns | 3.2A | 30V | SILICON | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 10A | 150 mJ | 500V | N-Channel | 620pF @ 25V | 1.4 Ω @ 2.5A, 10V | 5.5V @ 500μA | 3.2A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||
| IXTA240N055T7 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixta240n055t7-datasheets-7493.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G6 | 54ns | 75 ns | 63 ns | 240A | SILICON | DRAIN | SWITCHING | 480W Tc | 650A | 0.0036Ohm | 1000 mJ | 55V | N-Channel | 7600pF @ 25V | 3.6m Ω @ 25A, 10V | 4V @ 250μA | 240A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXTA220N075T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 480W | 1 | Not Qualified | R-PSSO-G2 | 65ns | 47 ns | 55 ns | 220A | SILICON | DRAIN | SWITCHING | 480W Tc | 130A | 350A | 0.0085Ohm | 750 mJ | 75V | N-Channel | 7700pF @ 25V | 4.5m Ω @ 25A, 10V | 4V @ 250μA | 220A Tc | 165nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA110N055T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixtp110n055t-datasheets-4382.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 230W | 1 | Not Qualified | R-PSSO-G2 | 30ns | 24 ns | 40 ns | 110A | SILICON | DRAIN | SWITCHING | 230W Tc | 300A | 0.007Ohm | 750 mJ | 55V | N-Channel | 3080pF @ 25V | 7m Ω @ 25A, 10V | 4V @ 100μA | 110A Tc | 67nC @ 10V | 10V | ±20V | |||||||||||||||||||
| IXTA160N085T | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/ixys-ixta160n085t-datasheets-7462.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | Not Qualified | R-PSSO-G2 | 61ns | 36 ns | 65 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 0.006Ohm | 1000 mJ | 85V | N-Channel | 6400pF @ 25V | 6m Ω @ 50A, 10V | 4V @ 1mA | 160A Tc | 164nC @ 10V | 10V | ±20V | ||||||||||||||||||||
| IXFT60N25Q | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/ixys-ixft60n25q-datasheets-7464.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | yes | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 60ns | 25 ns | 80 ns | 60A | 20V | SILICON | DRAIN | 360W Tc | 240A | 0.047Ohm | 1500 mJ | 250V | N-Channel | 5100pF @ 25V | 47m Ω @ 500mA, 10V | 4V @ 4mA | 60A Tc | 180nC @ 10V | 10V | ±20V |
