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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | REACH SVHC | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUZ73AE3046XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73ae3046xk-datasheets-7292.pdf | TO-220-3 | 3 | PG-TO220-3 | 530pF | 5.5A | 200V | 40W Tc | N-Channel | 530pF @ 25V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB06N03LB G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03lb-datasheets-7267.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 30V | 83W Tc | N-Channel | 2782pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS247ZE3043AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts247zaksa1-datasheets-7229.pdf | TO-220-5 | 5 | No | 120W | 1 | P-TO220-5-43 | 1.73nF | 15 ns | 30ns | 20 ns | 30 ns | 33A | 20V | 55V | 120W Tc | N-Channel | 1730pF @ 25V | 18mOhm @ 12A, 10V | 2V @ 90μA | 33A Tc | 90nC @ 10V | Temperature Sensing Diode | 18 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUZ73A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/infineontechnologies-buz73ae3046xk-datasheets-7292.pdf | 200V | 5.5A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | 2.54mm | EAR99 | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 40ns | 30 ns | 55 ns | 5.5A | 20V | 200V | SILICON | SWITCHING | 40W Tc | TO-220AB | 5.8A | 22A | 0.6Ohm | 200V | N-Channel | 530pF @ 25V | 3 V | 600m Ω @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||
| IPB04N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb04n03lb-datasheets-7307.pdf | 30V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 107W Tc | 320A | 0.0051Ohm | 270 mJ | N-Channel | 5203pF @ 15V | 3.5m Ω @ 55A, 10V | 2V @ 70μA | 80A Tc | 40nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BTS244Z E3043 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-220-5 | 5 | AVALANCHE RATED | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T5 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 35A | 188A | 0.018Ohm | 1650 mJ | N-Channel | 2660pF @ 25V | 13m Ω @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUZ73L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73l-datasheets-7318.pdf | 200V | 7A | TO-220-3 | Lead Free | 3 | No SVHC | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 60ns | 40 ns | 100 ns | 7A | 20V | SILICON | SWITCHING | 1.6V | 40W Tc | TO-220AB | 7A | 28A | 0.4Ohm | 120 mJ | 200V | N-Channel | 840pF @ 25V | 400m Ω @ 3.5A, 5V | 2V @ 1mA | 7A Tc | 5V | ±20V | ||||||||||||||||||||||||||||
| IPB13N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb13n03lbg-datasheets-2555.pdf | 30V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 52W Tc | 120A | 0.0125Ohm | 64 mJ | N-Channel | 1355pF @ 15V | 12.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPB06N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03lb-datasheets-7267.pdf | 30V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 200A | 0.0063Ohm | 164 mJ | N-Channel | 2782pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| IXFV30N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| BUZ31 E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31e3045a-datasheets-7214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 200V | 95W Tc | N-Channel | 1120pF @ 25V | 200mOhm @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282Z E3230 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3180a-datasheets-5226.pdf | TO-220-7 | 7 | EAR99 | AVALANCHE RATED | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T7 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 49V | 49V | 300W Tc | 80A | 320A | 0.0095Ohm | 2000 mJ | N-Channel | 4800pF @ 25V | 6.5m Ω @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUZ30A E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 200V | 125W Tc | N-Channel | 1900pF @ 25V | 130m Ω @ 13.5A, 10V | 4V @ 1mA | 21A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS247ZAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts247zaksa1-datasheets-7229.pdf | TO-220-5 Formed Leads | 5 | 5 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | 5 | 1 | 20 ns | 30 ns | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 120W Tc | 180A | 0.028Ohm | 1300 mJ | N-Channel | 1730pF @ 25V | 18m Ω @ 12A, 10V | 2V @ 90μA | 33A Tc | 90nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BTS244Z E3062A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | AVALANCHE RATED | compliant | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 35A | 188A | 0.018Ohm | 1650 mJ | N-Channel | 2660pF @ 25V | 13m Ω @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUZ32H3045AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz32h3045aatma1-datasheets-7238.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | no | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | 10 ns | 40ns | 30 ns | 55 ns | 9.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 75W Tc | 0.4Ohm | 120 mJ | N-Channel | 530pF @ 25V | 400m Ω @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BTS282ZAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3180a-datasheets-5226.pdf | TO-220-7 | 7 | no | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 7 | 300W | 1 | R-PSFM-T7 | 30 ns | 37ns | 36 ns | 70 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 49V | 49V | 300W Tc | 320A | 0.0095Ohm | 2000 mJ | N-Channel | 4800pF @ 25V | 6.5m Ω @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BUZ31 E3046 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31e3045a-datasheets-7214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | unknown | e3 | MATTE TIN | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 95W Tc | 13.5A | 54A | 0.2Ohm | 200 mJ | N-Channel | 1120pF @ 25V | 200m Ω @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BTS244ZNKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-220-5 Formed Leads | 5 | No | PG-TO220-5-3 | 2.66nF | 15 ns | 70ns | 25 ns | 40 ns | 35A | 20V | 55V | 170W Tc | N-Channel | 2660pF @ 25V | 13mOhm @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUZ31L E3044A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31l-datasheets-7222.pdf | TO-220-3 | PG-TO220-3-1 | 200V | 95W Tc | N-Channel | 1600pF @ 25V | 200mOhm @ 7A, 5V | 2V @ 1mA | 13.5A Tc | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp065n06lgaksa1-datasheets-1073.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 250W Tc | 80A | 320A | 0.0062Ohm | 530 mJ | N-Channel | 5100pF @ 30V | 6.2m Ω @ 80A, 10V | 2V @ 180μA | 80A Tc | 157nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| BUZ73AL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/infineontechnologies-buz73al-datasheets-7258.pdf | 200V | 5.5A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 60ns | 40 ns | 100 ns | 5.5A | 20V | SILICON | SWITCHING | 40W Tc | TO-220AB | 5.8A | 22A | 0.6Ohm | 200V | N-Channel | 840pF @ 25V | 1.6 V | 600m Ω @ 3.5A, 5V | 2V @ 1mA | 5.5A Tc | 5V | ±20V | |||||||||||||||||||||||||||||
| BUZ32 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-buz32-datasheets-7261.pdf | 200V | 9.5A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 75W | 1 | FET General Purpose Power | Not Qualified | 40ns | 30 ns | 55 ns | 9.5A | 20V | SILICON | 75W Tc | TO-220AB | 0.4Ohm | 200V | N-Channel | 530pF @ 25V | 400m Ω @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||
| BTS113AE3064NKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts113ae3064nksa1-datasheets-9302.pdf | TO-220-3 | 3 | 3 | EAR99 | unknown | SINGLE | 1 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | 60V | 60V | 40W Tc | TO-220AB | 46A | 0.17Ohm | N-Channel | 560pF @ 25V | 170m Ω @ 5.8A, 4.5V | 2.5V @ 1mA | 11.5A Tc | 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| BUZ32 E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz32e3045a-datasheets-7210.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 200V | 75W Tc | N-Channel | 530pF @ 25V | 400mOhm @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS169 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | YES | FET General Purpose Power | Single | 100V | 360mW Ta | 0.17A | N-Channel | 68pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.8nC @ 7V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP318S E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp318sh6327xtsa1-datasheets-3145.pdf | TO-261-4, TO-261AA | 4 | EAR99 | YES | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | 60V | 60V | 1.8W Ta | 2.6A | 0.15Ohm | N-Channel | 380pF @ 25V | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 2.6A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BTS113AE3045ANTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts113ae3045antma1-datasheets-9276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | LOGIC LEVEL COMPATIBLE | No | SINGLE | GULL WING | 40W | 1 | R-PSSO-G2 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 60V | 60V | 40W Tc | 46A | N-Channel | 560pF @ 25V | 170m Ω @ 5.8A, 4.5V | 2.5V @ 1mA | 11.5A Tc | 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| BSP129L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | TO-261-4, TO-261AA | 4 | 4 | No | DUAL | GULL WING | 1 | 4.4 ns | 4.1ns | 35 ns | 22 ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 240V | 1.8W Ta | 0.35A | 6Ohm | N-Channel | 108pF @ 25V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSS138N E6908 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 60V | 360mW Ta | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V |
