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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB13N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb13n03lbg-datasheets-2555.pdf | 30V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 30A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 52W Tc | 120A | 0.0125Ohm | 64 mJ | N-Channel | 1355pF @ 15V | 12.5m Ω @ 30A, 10V | 2V @ 20μA | 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB06N03LB | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03lb-datasheets-7267.pdf | 30V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 50A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 83W Tc | 200A | 0.0063Ohm | 164 mJ | N-Channel | 2782pF @ 15V | 6.3m Ω @ 50A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IXFV30N60P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/ixys-ixfh30n60p-datasheets-3966.pdf | 600V | 30A | TO-220-3, Short Tab | Lead Free | 3 | 3 | yes | AVALANCHE RATED | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 500W | 1 | Not Qualified | 20ns | 25 ns | 80 ns | 30A | 30V | SILICON | DRAIN | SWITCHING | 500W Tc | 80A | 0.24Ohm | 1500 mJ | 600V | N-Channel | 4000pF @ 25V | 240m Ω @ 15A, 10V | 5V @ 4mA | 30A Tc | 82nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| BSS138N E8004 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138nh6327xtsa2-datasheets-6338.pdf | TO-236-3, SC-59, SOT-23-3 | 60V | 360mW Ta | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ31 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31e3045a-datasheets-7214.pdf | 200V | 14.5A | TO-220-3 | Lead Free | 3 | No SVHC | 200mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | Not Qualified | 50ns | 60 ns | 150 ns | 14.5A | 20V | 200V | SILICON | 3V | 95W Tc | TO-220AB | 170 ns | 58A | 200 mJ | 200V | N-Channel | 1120pF @ 25V | 3 V | 200m Ω @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 5V | ±20V | ||||||||||||||||||||||||||||
| FDP16N50 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdp16n50-datasheets-7278.pdf | TO-220-3 | TO-220-3 | 500V | 200W Tc | N-Channel | 1945pF @ 25V | 380mOhm @ 8A, 10V | 5V @ 250μA | 16A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB06N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb06n03la-datasheets-5696.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 83W Tc | 50A | 350A | 0.0095Ohm | 225 mJ | N-Channel | 2653pF @ 15V | 5.9m Ω @ 30A, 10V | 2V @ 40μA | 50A Tc | 22nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB03N03LA | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb03n03lag-datasheets-2432.pdf | 25V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | e0 | Tin/Lead (Sn/Pb) | SINGLE | GULL WING | 220 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 80A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150W Tc | 385A | 0.0041Ohm | 960 mJ | N-Channel | 7027pF @ 15V | 2.7m Ω @ 55A, 10V | 2V @ 100μA | 80A Tc | 57nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IPB05N03LA G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb05n03la-datasheets-5628.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 94W Tc | 80A | 385A | 0.0078Ohm | 190 mJ | N-Channel | 3110pF @ 15V | 4.6m Ω @ 55A, 10V | 2V @ 50μA | 80A Tc | 25nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUZ73AE3046XK | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz73ae3046xk-datasheets-7292.pdf | TO-220-3 | 3 | PG-TO220-3 | 530pF | 5.5A | 200V | 40W Tc | N-Channel | 530pF @ 25V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | 5.5A Tc | 600 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ31 E3046 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31e3045a-datasheets-7214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | unknown | e3 | MATTE TIN | NO | SINGLE | THROUGH-HOLE | 3 | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 95W Tc | 13.5A | 54A | 0.2Ohm | 200 mJ | N-Channel | 1120pF @ 25V | 200m Ω @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BTS244ZNKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-220-5 Formed Leads | 5 | No | PG-TO220-5-3 | 2.66nF | 15 ns | 70ns | 25 ns | 40 ns | 35A | 20V | 55V | 170W Tc | N-Channel | 2660pF @ 25V | 13mOhm @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 13 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ31L E3044A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31l-datasheets-7222.pdf | TO-220-3 | PG-TO220-3-1 | 200V | 95W Tc | N-Channel | 1600pF @ 25V | 200mOhm @ 7A, 5V | 2V @ 1mA | 13.5A Tc | 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N06L G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp065n06lgaksa1-datasheets-1073.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | SINGLE | GULL WING | 260 | 4 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 250W Tc | 80A | 320A | 0.0062Ohm | 530 mJ | N-Channel | 5100pF @ 30V | 6.2m Ω @ 80A, 10V | 2V @ 180μA | 80A Tc | 157nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BUZ73AL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2000 | /files/infineontechnologies-buz73al-datasheets-7258.pdf | 200V | 5.5A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 40W | 1 | FET General Purpose Power | Not Qualified | 60ns | 40 ns | 100 ns | 5.5A | 20V | SILICON | SWITCHING | 40W Tc | TO-220AB | 5.8A | 22A | 0.6Ohm | 200V | N-Channel | 840pF @ 25V | 1.6 V | 600m Ω @ 3.5A, 5V | 2V @ 1mA | 5.5A Tc | 5V | ±20V | |||||||||||||||||||||||||||||||||
| BUZ32 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2005 | /files/infineontechnologies-buz32-datasheets-7261.pdf | 200V | 9.5A | TO-220-3 | Lead Free | 3 | 3 | EAR99 | AVALANCHE RATED | e3 | Matte Tin (Sn) | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 75W | 1 | FET General Purpose Power | Not Qualified | 40ns | 30 ns | 55 ns | 9.5A | 20V | SILICON | 75W Tc | TO-220AB | 0.4Ohm | 200V | N-Channel | 530pF @ 25V | 400m Ω @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BTS113AE3064NKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts113ae3064nksa1-datasheets-9302.pdf | TO-220-3 | 3 | 3 | EAR99 | unknown | SINGLE | 1 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | 60V | 60V | 40W Tc | TO-220AB | 46A | 0.17Ohm | N-Channel | 560pF @ 25V | 170m Ω @ 5.8A, 4.5V | 2.5V @ 1mA | 11.5A Tc | 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ32 E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz32e3045a-datasheets-7210.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 200V | 75W Tc | N-Channel | 530pF @ 25V | 400mOhm @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ31 E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz31e3045a-datasheets-7214.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | D2PAK (TO-263AB) | 200V | 95W Tc | N-Channel | 1120pF @ 25V | 200mOhm @ 9A, 5V | 4V @ 1mA | 14.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282Z E3230 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3180a-datasheets-5226.pdf | TO-220-7 | 7 | EAR99 | AVALANCHE RATED | compliant | AEC-Q101 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T7 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 49V | 49V | 300W Tc | 80A | 320A | 0.0095Ohm | 2000 mJ | N-Channel | 4800pF @ 25V | 6.5m Ω @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUZ30A E3045A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2008 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 200V | 125W Tc | N-Channel | 1900pF @ 25V | 130m Ω @ 13.5A, 10V | 4V @ 1mA | 21A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS247ZAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts247zaksa1-datasheets-7229.pdf | TO-220-5 Formed Leads | 5 | 5 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | No | SINGLE | 5 | 1 | 20 ns | 30 ns | 33A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 120W Tc | 180A | 0.028Ohm | 1300 mJ | N-Channel | 1730pF @ 25V | 18m Ω @ 12A, 10V | 2V @ 90μA | 33A Tc | 90nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BTS244Z E3062A | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | -40°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1999 | /files/infineontechnologies-bts244ze3062a-datasheets-7234.pdf | TO-263-5, D2Pak (4 Leads + Tab), TO-263BB | 4 | AVALANCHE RATED | compliant | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 55V | 55V | 170W Tc | 35A | 188A | 0.018Ohm | 1650 mJ | N-Channel | 2660pF @ 25V | 13m Ω @ 19A, 10V | 2V @ 130μA | 35A Tc | 130nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BUZ32H3045AATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-buz32h3045aatma1-datasheets-7238.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | no | EAR99 | AVALANCHE RATED | No | SINGLE | GULL WING | 4 | 1 | R-PSSO-G2 | 10 ns | 40ns | 30 ns | 55 ns | 9.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 75W Tc | 0.4Ohm | 120 mJ | N-Channel | 530pF @ 25V | 400m Ω @ 6A, 10V | 4V @ 1mA | 9.5A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BTS282ZAKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2001 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3180a-datasheets-5226.pdf | TO-220-7 | 7 | no | EAR99 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 7 | 300W | 1 | R-PSFM-T7 | 30 ns | 37ns | 36 ns | 70 ns | 80A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 49V | 49V | 300W Tc | 320A | 0.0095Ohm | 2000 mJ | N-Channel | 4800pF @ 25V | 6.5m Ω @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| BSP149L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 4 | 4 | DUAL | GULL WING | 1.8W | 1 | 660mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 1.8W Ta | 0.66A | 2.6A | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| BSS159N E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss159ne6327-datasheets-7184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 5.9 pF | N-Channel | 44pF @ 25V | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDU8580 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdd8580-datasheets-6749.pdf | 20V | 35A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | No SVHC | 3 | Single | 49.5W | 11ns | 34 ns | 59 ns | 35A | 20V | 1.8V | 49.5W Tc | 20V | N-Channel | 1445pF @ 10V | 9m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 27nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BSS139 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 250V | 250V | 360mW Ta | 0.1A | 30Ohm | 3.3 pF | N-Channel | 76pF @ 25V | 14 Ω @ 0.1mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSS159N E6906 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss159ne6327-datasheets-7184.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 5.9 pF | N-Channel | 44pF @ 25V | 3.5 Ω @ 160mA, 10V | 2.4V @ 26μA | 230mA Ta | 2.9nC @ 5V | Depletion Mode | 0V 10V | ±20V |
