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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRF6633TR1PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | MOSFET (Metal Oxide) | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineon-irf6633tr1pbf-datasheets-9285.pdf | 20V | 16A | DirectFET™ Isometric MP | 6.35mm | 676μm | 5.05mm | Lead Free | No SVHC | 5.6MOhm | 5 | No | 89W | 1 | DIRECTFET™ MP | 1.25nF | 9.7 ns | 31ns | 4.3 ns | 12 ns | 13A | 20V | 20V | 1.8V | 2.3W Ta 89W Tc | 9.4mOhm | 20V | N-Channel | 1250pF @ 10V | 1.8 V | 5.6mOhm @ 16A, 10V | 2.2V @ 250μA | 16A Ta 59A Tc | 17nC @ 4.5V | 5.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| BSP135L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135l6327htsa1-datasheets-7013.pdf | TO-261-4, TO-261AA | 4 | 4 | No | DUAL | GULL WING | 1 | 5.4 ns | 5.6ns | 182 ns | 28 ns | 120mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BTS110E3045ANTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts110e3045antma1-datasheets-9289.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 40W | TO-220AB | 600pF | 10A | 100V | N-Channel | 600pF @ 25V | 200mOhm @ 5A, 10V | 3.5V @ 1mA | 10A Tc | 200 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84P E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 2002 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss84pe6327-datasheets-5060.pdf | TO-236-3, SC-59, SOT-23-3 | 60V | 360mW Ta | P-Channel | 19pF @ 25V | 8 Ω @ 170mA, 10V | 2V @ 20μA | 170mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS169 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | YES | FET General Purpose Power | Single | 100V | 360mW Ta | 0.17A | N-Channel | 68pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.8nC @ 7V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP318S E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp318sh6327xtsa1-datasheets-3145.pdf | TO-261-4, TO-261AA | 4 | EAR99 | YES | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE | 60V | 60V | 1.8W Ta | 2.6A | 0.15Ohm | N-Channel | 380pF @ 25V | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 2.6A Ta | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BTS113AE3045ANTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts113ae3045antma1-datasheets-9276.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | LOGIC LEVEL COMPATIBLE | No | SINGLE | GULL WING | 40W | 1 | R-PSSO-G2 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 60V | 60V | 40W Tc | 46A | N-Channel | 560pF @ 25V | 170m Ω @ 5.8A, 4.5V | 2.5V @ 1mA | 11.5A Tc | 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| BSP129L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp129h6327xtsa1-datasheets-9195.pdf | TO-261-4, TO-261AA | 4 | 4 | No | DUAL | GULL WING | 1 | 4.4 ns | 4.1ns | 35 ns | 22 ns | 350mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 240V | 1.8W Ta | 0.35A | 6Ohm | N-Channel | 108pF @ 25V | 6 Ω @ 350mA, 10V | 1V @ 108μA | 350mA Ta | 5.7nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BSS138N E6908 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 60V | 360mW Ta | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS87 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss87h6327ftsa1-datasheets-2744.pdf | TO-243AA | 240V | 1W Ta | N-Channel | 97pF @ 25V | 6 Ω @ 260mA, 10V | 1.8V @ 108μA | 260mA Ta | 5.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS169 E6906 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | YES | FET General Purpose Power | Single | 100V | 360mW Ta | 0.17A | N-Channel | 68pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.8nC @ 7V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP149L6906HTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp149h6327xtsa1-datasheets-3532.pdf | TO-261-4, TO-261AA | 4 | 4 | DUAL | GULL WING | 1.8W | 1 | 660mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 200V | 200V | 1.8W Ta | 0.66A | 2.6A | N-Channel | 430pF @ 25V | 1.8 Ω @ 660mA, 10V | 1V @ 400μA | 660mA Ta | 14nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSP135 E6906 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135l6327htsa1-datasheets-7013.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | 4 | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.1A | 0.3A | 60Ohm | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSC106N025S G | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc106n025sg-datasheets-7135.pdf | 8-PowerTDFN | 5 | yes | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | FLAT | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25V | 25V | 2.8W Ta 43W Tc | 13A | 120A | 0.0106Ohm | 80 mJ | N-Channel | 1370pF @ 15V | 10.6m Ω @ 30A, 10V | 2V @ 20μA | 13A Ta 30A Tc | 11nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| BSP373 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp373l6327htsa1-datasheets-2310.pdf | TO-261-4, TO-261AA | 4 | no | EAR99 | 8541.29.00.95 | YES | DUAL | GULL WING | 255 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 1.8W Ta | 1.7A | 6.8A | 0.3Ohm | 45 mJ | N-Channel | 550pF @ 25V | 300m Ω @ 1.7A, 10V | 4V @ 1mA | 1.7A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BTS110NKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineon-bts110nksa1-datasheets-9270.pdf | TO-220-3 | 3 | 3 | EAR99 | No | 40W | SINGLE | 40W | 1 | 20 ns | 45ns | 55 ns | 70 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | 100V | TO-220AB | 40A | 0.2Ohm | N-Channel | 600pF @ 25V | 200m Ω @ 5A, 10V | 3.5V @ 1mA | 10A Tc | |||||||||||||||||||||||||||||||||||||||||||||
| BSS139 E6906 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 250V | 250V | 360mW Ta | 0.1A | 30Ohm | 3.3 pF | N-Channel | 76pF @ 25V | 14 Ω @ 0.1mA, 10V | 1V @ 56μA | 100mA Ta | 3.5nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BTS113ANKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2000 | https://pdf.utmel.com/r/datasheets/infineon-bts113anksa1-datasheets-9272.pdf | TO-220-3 | 3 | 3 | LOGIC LEVEL COMPATIBLE | No | SINGLE | 40W | 1 | 11.5A | SILICON | SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR | DRAIN | SWITCHING | 60V | 60V | 40W Tc | TO-220AB | 46A | N-Channel | 560pF @ 25V | 170m Ω @ 5.8A, 4.5V | 2.5V @ 1mA | 11.5A Tc | 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSP615S2L | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2003 | /files/infineontechnologies-bsp615s2l-datasheets-7099.pdf | 55V | 2.8A | TO-261-4, TO-261AA | Contains Lead | 4 | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.8W | 1 | FET General Purpose Power | Not Qualified | 2.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8W Ta | N-Channel | 330pF @ 25V | 90m Ω @ 1.4A, 10V | 2V @ 12μA | 2.8A Ta | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSP89 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp89l6327htsa1-datasheets-2370.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.75 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 240V | 240V | 1.8W Ta | 0.35A | 1.4A | 6Ohm | N-Channel | 140pF @ 25V | 6 Ω @ 350mA, 10V | 1.8V @ 108μA | 350mA Ta | 6.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSS123L7874XT | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss123e6327-datasheets-5104.pdf | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 69pF | 170mA | 100V | 360mW Ta | N-Channel | 69pF @ 25V | 6Ohm @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.67nC @ 10V | 6 Ω | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS127 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | 260 | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 500mW Ta | 0.021A | 600Ohm | 1.5 pF | N-Channel | 28pF @ 25V | 500 Ω @ 16mA, 10V | 2.6V @ 8μA | 21mA Ta | 1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSS138N E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss138ne6327-datasheets-5143.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | compliant | 8541.21.00.95 | YES | DUAL | GULL WING | 260 | 3 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.23A | 3.8 pF | N-Channel | 41pF @ 25V | 3.5 Ω @ 230mA, 10V | 1.4V @ 250μA | 230mA Ta | 1.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSS126 E6906 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss126e6906-datasheets-7116.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | compliant | 8541.21.00.95 | e3 | MATTE TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 600V | 600V | 500mW Ta | 0.021A | 1.5 pF | N-Channel | 28pF @ 25V | 500 Ω @ 16mA, 10V | 1.6V @ 8μA | 21mA Ta | 2.1nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSS123 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-bss123e6327-datasheets-5104.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.21.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 360mW Ta | 0.17A | 10Ohm | 6 pF | N-Channel | 69pF @ 25V | 6 Ω @ 170mA, 10V | 1.8V @ 50μA | 170mA Ta | 2.67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BSO094N03S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-bso094n03s-datasheets-7124.pdf | 30V | 13A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | NOT SPECIFIED | 1.56W | 1 | FET General Purpose Power | Not Qualified | 5.4 ns | 4.4ns | 4.4 ns | 22 ns | 10A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.56W Ta | MS-012AA | 0.0091Ohm | 120 pF | 30V | N-Channel | 2300pF @ 15V | 9.1m Ω @ 13A, 10V | 2V @ 30μA | 10A Ta | 18nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| BSP135 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135l6327htsa1-datasheets-7013.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 260 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.1A | 0.3A | 60Ohm | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| BSP125 E6433 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | EAR99 | 8541.29.00.95 | YES | DUAL | GULL WING | 260 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | 0.48A | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSO613SPV | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1999 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bso613spv-datasheets-7075.pdf | -60V | -3.44A | 8-SOIC (0.154, 3.90mm Width) | Contains Lead | 8 | EAR99 | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | DUAL | GULL WING | 235 | 8 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 3.44A | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 2.5W Ta | 13.8A | 0.13Ohm | 150 mJ | P-Channel | 875pF @ 25V | 130m Ω @ 3.44A, 10V | 4V @ 1mA | 3.44A Ta | 30nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSP125 E6327 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp125e6433-datasheets-7071.pdf | TO-261-4, TO-261AA | 4 | EAR99 | LOGIC LEVEL COMPATIBLE | 8541.29.00.95 | e0 | Tin/Lead (Sn/Pb) | YES | DUAL | GULL WING | 255 | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | 0.48A | N-Channel | 150pF @ 25V | 45 Ω @ 120mA, 10V | 2.3V @ 94μA | 120mA Ta | 6.6nC @ 10V | 4.5V 10V | ±20V |
