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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AON3414 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-SMD, Flat Lead | 8 | 18 Weeks | yes | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F8 | 10.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3.1W Ta | 0.017Ohm | N-Channel | 690pF @ 15V | 17m Ω @ 9A, 10V | 2.4V @ 250μA | 10.5A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1403BDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si1403bdlt1e3-datasheets-0031.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 14 Weeks | 6 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 30 | 1 | Other Transistors | Not Qualified | 13 ns | 30ns | 28 ns | 1.4A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | 20V | 625mW Ta | 0.15Ohm | P-Channel | 150m Ω @ 1.5A, 4.5V | 1.3V @ 250μA | 1.5A Ta | 4.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| DMN30H4D0LFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn30h4d0lfde13-datasheets-7657.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 550mA | 300V | 630mW Ta | N-Channel | 187.3pF @ 25V | 4 Ω @ 300mA, 10V | 2.8V @ 250μA | 550mA Ta | 7.6nC @ 10V | 2.7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTK60N50L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixtx60n50l2-datasheets-2027.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 17 Weeks | No SVHC | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 960W | 1 | 60A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 2.5V | 960W Tc | N-Channel | 24000pF @ 25V | 2.5 V | 100m Ω @ 30A, 10V | 4.5V @ 250μA | 60A Tc | 610nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| DMN10H170SVT-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn10h170svt13-datasheets-6600.pdf | SOT-23-6 Thin, TSOT-23-6 | 17 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 2.6A | 100V | 1.2W Ta | N-Channel | 1167pF @ 25V | 160m Ω @ 5A, 10V | 3V @ 250μA | 2.6A Ta | 9.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1070X-T1-GE3 | Vishay Siliconix | $0.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1070xt1e3-datasheets-7798.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 14 Weeks | 32.006612mg | Unknown | 6 | yes | EAR99 | Tin | No | e3 | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 1 | FET General Purpose Powers | 10 ns | 22ns | 22 ns | 14 ns | 1.2A | 12V | SILICON | SWITCHING | 236mW Ta | 0.099Ohm | 30V | N-Channel | 385pF @ 15V | 1.55 V | 99m Ω @ 1.2A, 4.5V | 1.55V @ 250μA | 8.3nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| DMT3006LFDF-7 | Diodes Incorporated | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3006lfdf13-datasheets-6548.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 14.1A | 30V | 800mW Ta | N-Channel | 1320pF @ 15V | 7m Ω @ 9A, 10V | 3V @ 250μA | 14.1A Ta | 22.6nC @ 10V | 3.7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2N7002KCX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | TO-236-3, SC-59, SOT-23-3 | 3 | 20 Weeks | EAR99 | 8541.21.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 300mW Ta | 0.3A | 2Ohm | N-Channel | 30pF @ 25V | 2 Ω @ 300mA, 10V | 2.5V @ 250μA | 300mA Ta | 0.4nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9D23-40EX | Nexperia USA Inc. | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9d2340ex-datasheets-0556.pdf | 6-UDFN Exposed Pad | 8 Weeks | 40V | 15W Tc | N-Channel | 637pF @ 20V | 23m Ω @ 8A, 10V | 2.1V @ 250μA | 8A Ta | 17nC @ 10V | 4.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB433EDK-T1-GE3 | Vishay Siliconix | $2.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib433edkt1ge3-datasheets-8245.pdf | PowerPAK® SC-75-6L | Lead Free | 14 Weeks | 95.991485mg | Unknown | 58mOhm | 6 | Tin | No | 1 | Single | 2.4W | 1 | PowerPAK® SC-75-6L Single | -9A | 8V | 20V | -400mV | 2.4W Ta 13W Tc | 47mOhm | -20V | P-Channel | 58mOhm @ 3.7A, 4.5V | 1V @ 250μA | 9A Tc | 21nC @ 8V | 58 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| TSM2305CX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2305cxrfg-datasheets-0553.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 20 Weeks | EAR99 | ULTRA-LOW RESISTANCE | 8541.29.00.95 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.25W Ta | 3.2A | 10A | 0.052Ohm | P-Channel | 990pF @ 10V | 55m Ω @ 3.2A, 4.5V | 1V @ 250μA | 3.2A Ta | 10nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD13381F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | BOTTOM | NO LEAD | 260 | CSD13381 | Single | NOT SPECIFIED | 500mW | 1 | 3.7 ns | 1.5ns | 3.8 ns | 11 ns | 2.1A | 8V | SILICON | DRAIN | SWITCHING | 850mV | 500mW Ta | 7A | 0.4Ohm | 12V | N-Channel | 200pF @ 6V | 180m Ω @ 500mA, 4.5V | 1.1V @ 250μA | 2.1A Ta | 1.4nC @ 4.5V | 1.8V 4.5V | |||||||||||||||||||||||||||||||||||||||
| NTLJF4156NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntljf4156ntag-datasheets-1725.pdf | 30V | 4.6A | 6-WDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 18 hours ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | C BEND | 260 | 6 | Single | 40 | 1.5W | 1 | FET General Purpose Power | 4.8 ns | 9.2ns | 9.2 ns | 14.2 ns | 3.7A | 8V | SILICON | DRAIN | SWITCHING | 710mW Ta | 2.5A | 20A | 0.09Ohm | 30V | N-Channel | 427pF @ 15V | 70m Ω @ 2A, 4.5V | 1V @ 250μA | 2.5A Tj | 6.5nC @ 4.5V | Schottky Diode (Isolated) | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| RTQ020N03TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 20 Weeks | No SVHC | 6 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 6 | 10 | 1.25W | 1 | FET General Purpose Power | 8 ns | 11ns | 11 ns | 17 ns | 2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.5V | 1.25W Ta | 2A | 8A | 0.194Ohm | 30V | N-Channel | 135pF @ 10V | 125m Ω @ 2A, 4.5V | 1.5V @ 1mA | 2A Ta | 3.3nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||
| RTR025P02TL | ROHM Semiconductor | $0.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rtr025p02tl-datasheets-0486.pdf | SC-96 | 3 | 19 Weeks | yes | EAR99 | e1 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | YES | DUAL | GULL WING | 260 | 3 | 10 | 1 | Other Transistors | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | 2.5A | 0.105Ohm | P-Channel | 630pF @ 10V | 95m Ω @ 2.5A, 4.5V | 2V @ 1mA | 2.5A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
| PMPB10XNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmpb10xne115-datasheets-6904.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | IEC-60134 | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | S-PDSO-N6 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.7W Ta 12.5W Tc | 9A | 36A | 0.014Ohm | N-Channel | 2175pF @ 10V | 14m Ω @ 9A, 4.5V | 900mV @ 250μA | 9A Ta | 34nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDC634P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc634p-datasheets-0447.pdf | -20V | -3.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 80MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 10 ns | 9ns | 9 ns | 27 ns | -3.5A | 8V | -20V | SILICON | SWITCHING | 20V | -800mV | 1.6W Ta | -20V | P-Channel | 779pF @ 10V | -800 mV | 80m Ω @ 3.5A, 4.5V | 1.5V @ 250μA | 3.5A Ta | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| SSM6J215FE(TE85L,F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2012 | /files/toshibasemiconductorandstorage-ssm6j215fete85lf-datasheets-0267.pdf | SOT-563, SOT-666 | 12 Weeks | 6 | EAR99 | Single | 500mW | Other Transistors | 3.4A | 8V | 20V | 500mW Ta | -20V | P-Channel | 630pF @ 10V | 59m Ω @ 3A, 4.5V | 1V @ 1mA | 3.4A Ta | 10.4nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3115UDM-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn3115udm7-datasheets-0298.pdf | SOT-23-6 | 3mm | 1.1mm | 1.6mm | 6 | 18 Weeks | No SVHC | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 40 | 900mW | 1 | FET General Purpose Power | 3.2A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900mW Ta | 3.22A | 30V | N-Channel | 476pF @ 15V | 60m Ω @ 6A, 4.5V | 1V @ 250μA | 3.2A Ta | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| BUK7M67-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk7m6760ex-datasheets-0304.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PSSO-G4 | 14A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 31W Tc | 58A | 0.067Ohm | 4 mJ | N-Channel | 334pF @ 25V | 67m Ω @ 5A, 10V | 4V @ 1mA | 14A Tc | 6.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3016LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmn3016lfdf13-datasheets-6407.pdf | 6-UDFN Exposed Pad | 6 | 22 Weeks | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | AEC-Q101 | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.02W Ta | 10A | 0.012Ohm | N-Channel | 1415pF @ 15V | 12m Ω @ 11A, 10V | 2V @ 250μA | 12A Ta | 25.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4C10NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-nttfs4c10ntag-datasheets-8248.pdf | 8-PowerWDFN | Lead Free | 18 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | 8 | Single | FET General Purpose Power | 44A | 20V | 790mW Ta 23.6W Tc | 30V | N-Channel | 993pF @ 15V | 7.4m Ω @ 30A, 10V | 2.2V @ 250μA | 8.2A Ta 44A Tc | 18.6nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M52-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m5240ex-datasheets-0344.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AVALANCHE RATED | e3 | Tin (Sn) | AEC-Q101; IEC-60134 | YES | SINGLE | GULL WING | 260 | 8 | 30 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 31W | 17.6A | 70A | 0.052Ohm | 4.98 mJ | N-Channel | 407pF @ 25V | 40m Ω @ 5A, 10V | 2.1V @ 1mA | 17.6A | 4.5nC @ 5V | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| SIR172ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir172adpt1ge3-datasheets-0357.pdf | PowerPAK® SO-8 | Lead Free | 14 Weeks | 506.605978mg | 8.9mOhm | 8 | No | 1 | Single | 3.9W | 1 | PowerPAK® SO-8 | 1.515nF | 18 ns | 23ns | 11 ns | 22 ns | 24A | 20V | 30V | 29.8W Tc | 8.5mOhm | 30V | N-Channel | 1515pF @ 15V | 8.5mOhm @ 10A, 10V | 2.4V @ 250μA | 24A Tc | 44nC @ 10V | 8.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD23381F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | BOTTOM | NO LEAD | 260 | CSD23381 | 1 | Single | NOT SPECIFIED | 1 | 4.5 ns | 3.9ns | 7 ns | 18 ns | 2.3A | -8V | SILICON | SWITCHING | 12V | -950mV | 500mW Ta | -12V | P-Channel | 236pF @ 6V | 175m Ω @ 500mA, 4.5V | 1.2V @ 250μA | 2.3A Ta | 1.14nC @ 6V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||
| CSD23382F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | BOTTOM | NO LEAD | 260 | CSD23382 | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 25ns | 41 ns | 66 ns | -3.5A | -800mV | SILICON | SWITCHING | 12V | -800mV | 500mW Ta | P-Channel | 235pF @ 6V | 76m Ω @ 500mA, 4.5V | 1.1V @ 250μA | 3.5A Ta | 1.35nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| PMPB20XNEAX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmpb20xneaz-datasheets-3227.pdf | 6-UDFN Exposed Pad | 6 | 8 Weeks | AEC-Q101; IEC-60134 | DUAL | NO LEAD | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | S-PDSO-N6 | 7.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 460mW Ta 12.5W Tc | 0.02Ohm | N-Channel | 930pF @ 10V | 20m Ω @ 7.5A, 4.5V | 1.25V @ 250μA | 7.5A Ta | 15nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| MTM761100LBF | Panasonic Electronic Components |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2010 | /files/panasonicelectroniccomponents-mtm761100lbf-datasheets-0147.pdf | 6-SMD, Flat Leads | 2mm | 700μm | 1.7mm | Lead Free | 6 | 10 Weeks | No SVHC | 42mOhm | 6 | EAR99 | unknown | DUAL | NOT SPECIFIED | Single | NOT SPECIFIED | 700mW | 1 | Other Transistors | -4A | 8V | SILICON | SWITCHING | 12V | 700mW Ta | 4A | -12V | P-Channel | 1200pF @ 10V | -650 mV | 42m Ω @ 1A, 4V | 1V @ 1mA | 4A Ta | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFPS43N50KPBF | Vishay Siliconix | $4.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfps43n50k-datasheets-6058.pdf | 500V | 47A | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 78mOhm | 3 | No | 1 | Single | 540W | 1 | SUPER-247™ (TO-274AA) | 8.31nF | 25 ns | 140ns | 74 ns | 55 ns | 47A | 30V | 500V | 5V | 540W Tc | 78mOhm | 500V | N-Channel | 8310pF @ 25V | 90mOhm @ 28A, 10V | 5V @ 250μA | 47A Tc | 350nC @ 10V | 90 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIB441EDK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sib441edkt1ge3-datasheets-0168.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 14 Weeks | 6 | yes | EAR99 | No | DUAL | Single | 13W | 1 | S-PDSO-N3 | 42ns | 50 ns | 60 ns | 8.3A | 8V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 40A | 0.028Ohm | -12V | P-Channel | 1180pF @ 6V | 25.5m Ω @ 4A, 4.5V | 900mV @ 250μA | 9A Tc | 33nC @ 8V | 1.5V 4.5V | ±8V |
