Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPZ65R019C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipz65r019c7xksa1-datasheets-8931.pdf | TO-247-4 | Lead Free | 4 | 18 Weeks | 38.000013g | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 446W | 1 | R-PSFM-T4 | 30 ns | 27ns | 5 ns | 106 ns | 75A | 20V | 650V | SILICON | SWITCHING | 446W Tc | 496A | 583 mJ | N-Channel | 9900pF @ 400V | 19m Ω @ 58.3A, 10V | 4V @ 2.92mA | 75A Tc | 215nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| C2M0040120D | Cree/Wolfspeed | $39.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Z-FET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2005 | TO-247-3 | 5.21mm | 21.1mm | 16.13mm | 16 Weeks | 38.000013g | No SVHC | 3 | 1 | Single | TO-247-3 | 14.8 ns | 52ns | 34.4 ns | 26.4 ns | 60A | 25V | 1200V | 2.6V | 330W Tc | 40mOhm | N-Channel | 1893pF @ 1000V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 60A Tc | 115nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RYE002N05TCL | ROHM Semiconductor | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SC-75, SOT-416 | Lead Free | 3 | 12 Weeks | EAR99 | not_compliant | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | R-PDSO-G3 | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 50V | 50V | 150mW Ta | 0.2A | 2.8Ohm | N-Channel | 26pF @ 10V | 2.2 Ω @ 200mA, 4.5V | 800mV @ 1mA | 200mA Ta | 0.9V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN44N50 | IXYS | $90.95 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | https://pdf.utmel.com/r/datasheets/ixys-ixfn48n50-datasheets-2171.pdf | 500V | 44A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 120mOhm | 4 | yes | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 520W | 1 | FET General Purpose Power | 60ns | 30 ns | 100 ns | 44A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | 500V | N-Channel | 8400pF @ 25V | 120m Ω @ 500mA, 10V | 4V @ 8mA | 44A Tc | 270nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| MSC025SMA120B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-3 | 17 Weeks | TO-247-3 | 1.2kV | 500W Tc | N-Channel | 3020pF @ 1000V | 31mOhm @ 40A, 20V | 2.8V @ 1mA | 103A Tc | 232nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK300N20X3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx300n20x3-datasheets-2423.pdf | TO-264-3, TO-264AA | 19 Weeks | 200V | 1250W Tc | N-Channel | 23800pF @ 25V | 4m Ω @ 150A, 10V | 4.5V @ 8mA | 300A Tc | 375nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH3205WSBQA | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | Non-RoHS Compliant | /files/transphorm-tph3205wsbqa-datasheets-8952.pdf | TO-247-3 | NOT SPECIFIED | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 2200pF @ 400V | 62m Ω @ 22A, 8V | 2.6V @ 700μA | 35A Tc | 42nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3040KRC14 | ROHM Semiconductor | $116.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3040krc14-datasheets-8959.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 262W | 55A | 137A | 0.052Ohm | N-Channel | 1337pF @ 800V | 52m Ω @ 20A, 18V | 5.6V @ 10mA | 55A Tc | 107nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C2M0045170D | Cree/Wolfspeed | $82.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C2M™ | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | 150°C | SiCFET (Silicon Carbide) | RoHS Compliant | 2014 | TO-247-3 | 16 Weeks | No SVHC | 3 | TO-247-3 | 72A | 1700V | 2.6V | 520W Tc | 45mOhm | N-Channel | 3672pF @ 1kV | 70mOhm @ 50A, 20V | 4V @ 18mA | 72A Tc | 188nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C2M0080170P | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C2M™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-4 | 16 Weeks | TO-247-4 | 1700V | 277W Tc | N-Channel | 2250pF @ 1000V | 125mOhm @ 28A, 20V | 4V @ 10mA | 40A Tc | 120nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VS-FC420SA15 | Vishay Semiconductor Diodes Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysemiconductordiodesdivision-vsfc420sa15-datasheets-8970.pdf | SOT-227-4, miniBLOC | 20 Weeks | SOT-227 | 150V | 909W Tc | N-Channel | 13700pF @ 25V | 2.75mOhm @ 200A, 10V | 5.4V @ 1mA | 400A Tc | 250nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT3017ALHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/rohmsemiconductor-sct3017alhrc11-datasheets-8973.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 427W | N-Channel | 2884pF @ 500V | 22.1m Ω @ 47A, 18V | 5.6V @ 23.5mA | 118A Tc | 172nC @ 18V | 18V | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP65H035WSQA | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Cascode Gallium Nitride FET) | TO-247-3 | 12 Weeks | 650V | 187W Tc | N-Channel | 1500pF @ 400V | 41m Ω @ 32A, 10V | 4.5V @ 1mA | 47.2A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFB60N80P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, PolarHT™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/ixys-ixfb60n80p-datasheets-8984.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 26 Weeks | 140MOhm | 3 | yes | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 1.25kW | 1 | 29ns | 26 ns | 110 ns | 60A | 30V | SILICON | DRAIN | SWITCHING | 1250W Tc | 5000 mJ | 800V | N-Channel | 18000pF @ 25V | 140m Ω @ 30A, 10V | 5V @ 8mA | 60A Tc | 250nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| IXTX40P50P | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixtk40p50p-datasheets-2169.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | yes | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PSIP-T3 | 40A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 890W Tc | 120A | 0.23Ohm | 3500 mJ | P-Channel | 11500pF @ 25V | 230m Ω @ 20A, 10V | 4V @ 1mA | 40A Tc | 205nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IXFX210N30X3 | IXYS | $26.94 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfx210n30x3-datasheets-8871.pdf | TO-247-3 | 19 Weeks | 300V | 1250W Tc | N-Channel | 24.2nF @ 25V | 5.5m Ω @ 105A, 10V | 4.5V @ 8mA | 210A Tc | 375nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK100L60W,VQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2013 | /files/toshibasemiconductorandstorage-tk100l60wvq-datasheets-8875.pdf | TO-3PL | 15nF | 16 Weeks | 18mOhm | Single | FET General Purpose Power | 130ns | 125 ns | 690 ns | 100A | 30V | 600V | 797W Tc | N-Channel | 15000pF @ 30V | 18m Ω @ 50A, 10V | 3.7V @ 5mA | 100A Ta | 360nC @ 10V | Super Junction | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFX180N25T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | GigaMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfx180n25t-datasheets-9997.pdf | TO-247-3 | Lead Free | 3 | 20 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 180A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 1390W Tc | 500A | 0.0129Ohm | 3000 mJ | N-Channel | 28000pF @ 25V | 12.9m Ω @ 60A, 10V | 5V @ 8mA | 180A Tc | 345nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STY50N105DK5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NO | NOT SPECIFIED | STY50N | NOT SPECIFIED | FET General Purpose Powers | Single | 1050V | 625W Tc | 44A | N-Channel | 6600pF @ 100V | 120m Ω @ 22A, 10V | 5V @ 100μA | 44A Tc | 175nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTX90N25L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixtk90n25l2-datasheets-2440.pdf | TO-247-3 | Lead Free | 3 | 28 Weeks | No SVHC | 33mOhm | 3 | yes | EAR99 | AVALANCHE RATED | unknown | e1 | TIN SILVER COPPER | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 960W | 1 | FET General Purpose Power | Not Qualified | 90A | 20V | SILICON | DRAIN | SWITCHING | 2V | 960W Tc | 250V | N-Channel | 23000pF @ 25V | 2 V | 33m Ω @ 45A, 10V | 4.5V @ 3mA | 90A Tc | 640nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IXTK110N20L2 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/ixys-ixtx110n20l2-datasheets-3655.pdf | TO-264-3, TO-264AA | Lead Free | 3 | 28 Weeks | yes | EAR99 | AVALANCHE RATED | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 960W | 1 | FET General Purpose Power | R-PSFM-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 200V | 200V | 960W Tc | 275A | 0.024Ohm | 5000 mJ | N-Channel | 23000pF @ 25V | 24m Ω @ 55A, 10V | 4.5V @ 3mA | 110A Tc | 500nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IMW120R030M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imw120r030m1hxksa1-datasheets-8888.pdf | TO-247-3 | 20 Weeks | 1.2kV | 227W Tc | N-Channel | 2.12nF @ 800V | 40m Ω @ 25A, 18V | 5.7V @ 10mA | 56A Tc | 63nC @ 18V | 15V 18V | +23V, -7V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT30N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~200°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/stmicroelectronics-sct30n120-datasheets-8891.pdf | TO-247-3 | Lead Free | 38.000013g | No SVHC | 247 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | NOT SPECIFIED | SCT30 | 1 | Single | NOT SPECIFIED | 175W | FET General Purpose Power | 19 ns | 20ns | 28 ns | 45 ns | 40A | 25V | 1200V | 2.6V | 270W Tc | 1.2kV | N-Channel | 1700pF @ 400V | 100m Ω @ 20A, 20V | 2.6V @ 1mA (Typ) | 40A Tc | 105nC @ 20V | 20V | +25V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||
| C3M0075120D | Cree/Wolfspeed | $13.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | TO-247-3 | 8 Weeks | TO-247-3 | 1200V | 113.6W Tc | N-Channel | 1350pF @ 1000V | 90mOhm @ 20A, 15V | 4V @ 5mA | 30A Tc | 54nC @ 15V | 15V | +19V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK180N10 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixfx180n10-datasheets-8126.pdf | 100V | 180A | TO-264-3, TO-264AA | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 3 | Single | 560W | 1 | FET General Purpose Power | 90ns | 65 ns | 140 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 560W Tc | 720A | 0.008Ohm | 100V | N-Channel | 10900pF @ 25V | 8m Ω @ 90A, 10V | 4V @ 8mA | 180A Tc | 390nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STW70N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw70n60m24-datasheets-7155.pdf | TO-247-3 | Lead Free | 3 | 16 Weeks | 38.000013g | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STW70N | 1 | Single | 450W | 1 | FET General Purpose Powers | 32 ns | 17ns | 9 ns | 155 ns | 68A | 25V | SILICON | SWITCHING | 600V | 600V | 3V | 450W Tc | 272A | 0.04Ohm | 9000 mJ | N-Channel | 5200pF @ 100V | 40m Ω @ 34A, 10V | 4V @ 250μA | 68A Tc | 118nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| GA20JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 18 Weeks | 3 | YES | Other Transistors | 45A | N-CHANNEL | 1200V | 282W Tc | 3091pF @ 800V | 60m Ω @ 20A | 45A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0030090K | Cree/Wolfspeed | $39.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | SiCFET (Silicon Carbide) | Non-RoHS Compliant | TO-247-4 | 16 Weeks | TO-247-4 | 900V | 149W Tc | 30mOhm | N-Channel | 1864pF @ 600V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 63A Tc | 87nC @ 15V | 15V | +15V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT50N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~200°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | /files/stmicroelectronics-sct50n120-datasheets-8917.pdf | TO-247-3 | 24.45mm | Lead Free | ACTIVE (Last Updated: 7 months ago) | HiP247-8396756 | SCT50 | 1 | 318W | 200°C | 65A | 25V | 1200V | 1.8V | 318W Tc | N-Channel | 1900pF @ 400V | 69m Ω @ 40A, 20V | 3V @ 1mA | 65A Tc | 122nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN180N15P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarHT™ | Chassis Mount, Panel | Chassis Mount | -55°C~175°C TJ | Box | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/ixys-ixfn180n15p-datasheets-8867.pdf | SOT-227-4, miniBLOC | 38.23mm | 9.6mm | 25.42mm | Lead Free | 4 | 24 Weeks | No SVHC | 11MOhm | 4 | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 680W | 1 | Not Qualified | 30 ns | 32ns | 36 ns | 150 ns | 150A | 20V | SILICON | ISOLATED | SWITCHING | 5V | 680W Tc | 380A | 150V | N-Channel | 7000pF @ 25V | 11m Ω @ 90A, 10V | 5V @ 4mA | 150A Tc | 240nC @ 10V | 10V | ±20V |
