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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Lead Free | Number of Terminations | Factory Lead Time | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| MCQ9435-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/microcommercialco-mcq9435tp-datasheets-9426.pdf | 8-SOIC (0.154, 3.90mm Width) | 22 Weeks | 30V | 1.4W Ta | P-Channel | 105m Ω @ 2A, 4.5V | 2V @ 250μA | 5.1A Ta | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN55D0UTQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn55d0ut7-datasheets-6347.pdf | SOT-523 | 3 | 17 Weeks | yes | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | R-PDSO-G3 | 160mA | SILICON | SINGLE WITH BUILT-IN DIODE | 50V | 50V | 200mW Ta | 0.16A | 4Ohm | N-Channel | 25pF @ 10V | 4 Ω @ 100mA, 4V | 1V @ 250μA | 160mA Ta | 2.5V 4V | ±12V | |||||||||||||||||||||||||||||||||||||||
| IXTF1N450 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixtf1n450-datasheets-9289.pdf | i4-Pac™-5 (3 Leads) | 3 | 8 Weeks | 3 | EAR99 | unknown | Single | 165W | 1 | FET General Purpose Power | 60ns | 127 ns | 58 ns | 900mA | 20V | SILICON | ISOLATED | 4500V | 160W Tc | 0.9A | 3A | 80Ohm | 4.5kV | N-Channel | 1730pF @ 25V | 85 Ω @ 50mA, 10V | 6.5V @ 250μA | 900mA Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FK3506010L | Panasonic Electronic Components | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-fk3506010l-datasheets-9241.pdf | SC-85 | Lead Free | 3 | 10 Weeks | No SVHC | 12Ohm | 85 | EAR99 | DUAL | FLAT | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PDSO-F3 | 100 ns | 100mA | 12V | SILICON | SWITCHING | 1.2V | 150mW Ta | 0.1A | 60V | N-Channel | 12pF @ 3V | 1.2 V | 12 Ω @ 10mA, 4V | 1.5V @ 1μA | 100mA Ta | 2.5V 4V | ±12V | |||||||||||||||||||||||||||||||||||||
| RV2C002UNT2L | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/rohmsemiconductor-rv2c002unt2l-datasheets-9089.pdf | SC-101, SOT-883 | 16 Weeks | No SVHC | 1.4Ohm | 1006 | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 180mA | 20V | 1V | 100mW Ta | N-Channel | 12pF @ 10V | 2 Ω @ 150mA, 4.5V | 1V @ 100μA | 180mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| NX7002BKWX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-nx7002bkwx-datasheets-9042.pdf | SC-70, SOT-323 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 270mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 310mW Ta 1.67W Tc | 0.24A | 3.2Ohm | N-Channel | 23.6pF @ 10V | 2.8 Ω @ 200mA, 10V | 2.1V @ 250μA | 270mA Ta | 1nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PMZB670UPE,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmzb670upe315-datasheets-9063.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | Tin | No | e3 | YES | BOTTOM | 260 | 3 | Single | 30 | 715mW | 1 | 18 ns | 30ns | 72 ns | 80 ns | 680mA | 8V | -20V | SILICON | DRAIN | SWITCHING | 20V | 360mW Ta 2.7W Tc | 0.68A | 0.85Ohm | -20V | P-Channel | 87pF @ 10V | 850m Ω @ 400mA, 4.5V | 1.3V @ 250μA | 680mA Ta | 1.14nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| SCTWA50N120 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~200°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sctwa50n120-datasheets-9181.pdf | TO-247-3 | ACTIVE (Last Updated: 8 months ago) | SCTWA | 1200V | 318W Tc | N-Channel | 1900pF @ 400V | 69m Ω @ 40A, 20V | 3V @ 1mA | 65A Tc | 122nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002T-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/microcommercialco-2n7002ttp-datasheets-9191.pdf | SOT-523 | 3 | 91 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 10 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE | SWITCHING | 60V | 60V | 150mW | 0.115A | 5 pF | N-Channel | 50pF @ 25V | 13.5 Ω @ 500mA, 10V | 2V @ 250μA | 115mA | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMZ1000UN,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-pmz1000un315-datasheets-9205.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 3 | No | e3 | Tin (Sn) | YES | BOTTOM | 3 | 350mW | 1 | 4 ns | 7.5ns | 4.5 ns | 18 ns | 480mA | 8V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 350mW Ta | 0.48A | 1Ohm | N-Channel | 43pF @ 25V | 1 Ω @ 200mA, 4.5V | 950mV @ 250μA | 480mA Ta | 0.89nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| DMN65D8LFB-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn65d8lfb7b-datasheets-4295.pdf | 3-UFDFN | 3 | 23 Weeks | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | BOTTOM | NO LEAD | 260 | 3 | 40 | 1 | FET General Purpose Power | R-PBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 430mW Ta | 0.4A | 4Ohm | N-Channel | 25pF @ 25V | 3 Ω @ 115mA, 10V | 2V @ 250μA | 260mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI3407-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/microcommercialco-si3407tp-datasheets-9245.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | yes | 260 | 10 | 30V | 350mW Ta | P-Channel | 700pF @ 15V | 87m Ω @ 2.9A, 4.5V | 3V @ 250μA | 4.1A Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBF170Q-7-F | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | https://pdf.utmel.com/r/datasheets/diodesincorporated-mmbf170q13f-datasheets-7335.pdf | TO-236-3, SC-59, SOT-23-3 | 6 Weeks | yes | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 500mA | 60V | 300mW Ta | N-Channel | 40pF @ 10V | 5 Ω @ 200mA, 10V | 3V @ 250μA | 500mA Ta | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2304-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/microcommercialco-si2304tp-datasheets-9249.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 22 Weeks | yes | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | 10 | 1 | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 30V | 250mW Ta | 2.5A | 0.065Ohm | N-Channel | 240pF @ 15V | 90m Ω @ 2.2A, 4.5V | 3V @ 250μA | 2.5A Ta | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMN1260UFA-7B | Diodes Incorporated | $0.21 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn1260ufa7b-datasheets-9051.pdf | 3-XFDFN | 60pF | 2 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-N2 | 7.4 ns | 18.8ns | 59.2 ns | 106.5 ns | 500mA | 8V | SILICON | DRAIN | SWITCHING | 360mW Ta | 0.5A | 12V | N-Channel | 60pF @ 10V | 366m Ω @ 200mA, 4.5V | 1V @ 250μA | 500mA Ta | 0.96nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| DMP21D2UFA-7B | Diodes Incorporated | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp21d2ufa7b-datasheets-9003.pdf | 3-XFDFN | 49pF | 2 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-N2 | 10.3 ns | 37.3ns | 163 ns | 330 ns | 330mA | 8V | SILICON | DRAIN | SWITCHING | 20V | 360mW Ta | 1Ohm | -20V | P-Channel | 49pF @ 15V | 1 Ω @ 200mA, 4.5V | 1V @ 250μA | 330mA Ta | 0.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| C3M0021120K | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | TO-247-4 | 4 Weeks | TO-247-4L | 1200V | 469W Tc | N-Channel | 4818pF @ 1000V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 100A Tc | 162nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHU003N03FRAT106 | ROHM Semiconductor | $1.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | SC-70, SOT-323 | 3 | 16 Weeks | Unknown | 3 | EAR99 | not_compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 300mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5V | 200mW | N-Channel | 20pF @ 10V | 1.2 Ω @ 300mA, 10V | 2.5V @ 1mA | 300mA Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RU1E002SPTCL | ROHM Semiconductor | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-ru1e002sptcl-datasheets-9029.pdf | SC-85 | Lead Free | 3 | 16 Weeks | 85 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-F3 | 250mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 200mW Ta | 0.25A | P-Channel | 30pF @ 10V | 1.4 Ω @ 250mA, 10V | 2.5V @ 1mA | 250mA Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| PMZB200UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmzb200uneyl-datasheets-9127.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | BOTTOM | NO LEAD | 3 | 1 | 1.4A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 350mW Ta 6.25W Tc | 0.25Ohm | N-Channel | 89pF @ 15V | 250m Ω @ 1.4A, 4.5V | 950mV @ 250μA | 1.4A Ta | 2.7nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| C2M0045170P | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C2M™ | Through Hole | -40°C~150°C TJ | Tube | Not Applicable | SiCFET (Silicon Carbide) | TO-247-4 | 16 Weeks | TO-247-4 | 1700V | 520W Tc | N-Channel | 3672pF @ 1000V | 59mOhm @ 50A, 20V | 4V @ 18mA | 72A Tc | 188nC @ 20V | 20V | +25V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN50N80Q2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/ixys-ixfn50n80q2-datasheets-0052.pdf | SOT-227-4, miniBLOC | Lead Free | 4 | 10 Weeks | 150mOhm | 4 | yes | AVALANCHE RATED, UL RECOGNIZED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 1.135kW | 1 | FET General Purpose Power | Not Qualified | 25ns | 13 ns | 60 ns | 50A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1135W Tc | 200A | 5000 mJ | 800V | N-Channel | 13500pF @ 25V | 160m Ω @ 500mA, 10V | 5.5V @ 8mA | 50A Tc | 260nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| SCT3022KLHRC11 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3022klhrc11-datasheets-8991.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 427W | N-Channel | 2879pF @ 800V | 28.6m Ω @ 36A, 18V | 5.6V @ 18.2mA | 95A Tc | 178nC @ 18V | 18V | +22V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K16CTC,L3F | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm3k16ctcl3f-datasheets-8997.pdf | SC-101, SOT-883 | 12 Weeks | 20V | 500mW Ta | N-Channel | 12pF @ 10V | 2.2 Ω @ 100mA, 4.5V | 1V @ 1mA | 200mA Ta | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IMZ120R030M1HXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolSiC™ | Through Hole | -55°C~175°C TJ | Not Applicable | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-imz120r030m1hxksa1-datasheets-9000.pdf | TO-247-4 | 20 Weeks | 1.2kV | 227W Tc | N-Channel | 2.12nF @ 800V | 40m Ω @ 25A, 18V | 5.7V @ 10mA | 56A Tc | 63nC @ 18V | 15V 18V | +23V, -7V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFN27N80 | IXYS | $5.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfk27n80-datasheets-0806.pdf | 800V | 27A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 300mOhm | 4 | yes | AVALANCHE RATED | Nickel (Ni) | UPPER | UNSPECIFIED | NOT SPECIFIED | 4 | NOT SPECIFIED | 520W | 1 | FET General Purpose Power | Not Qualified | 80ns | 40 ns | 75 ns | 27A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 520W Tc | 250 ns | 108A | 800V | N-Channel | 9740pF @ 25V | 300m Ω @ 13.5A, 10V | 4.5V @ 8mA | 27A Tc | 400nC @ 10V | 10V 15V | ±20V | |||||||||||||||||||||||||||
| SCT3030KLHRC11 | ROHM Semiconductor | $50.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Through Hole | 175°C TJ | 1 (Unlimited) | SiCFET (Silicon Carbide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3030klhrc11-datasheets-9012.pdf | TO-247-3 | 21 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 1200V | 339W | N-Channel | 2222pF @ 800V | 39m Ω @ 27A, 18V | 5.6V @ 13.3mA | 72A Tc | 131nC @ 18V | 18V | +22V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C3M0016120K | Cree/Wolfspeed |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | TO-247-4 | 4 Weeks | TO-247-4 | 1.2kV | 556W Tc | N-Channel | 6085pF @ 1000V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 115A Tc | 211nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB950UPEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmzb950upeyl-datasheets-9018.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | BOTTOM | NO LEAD | 3 | 1 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta 2.7W Tc | 0.5A | P-Channel | 43pF @ 10V | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 500mA Ta | 2.1nC @ 4.5V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| SCT3040KRC14 | ROHM Semiconductor | $116.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 175°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct3040krc14-datasheets-8959.pdf | TO-247-4 | 4 | 8 Weeks | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1200V | 1200V | 262W | 55A | 137A | 0.052Ohm | N-Channel | 1337pF @ 800V | 52m Ω @ 20A, 18V | 5.6V @ 10mA | 55A Tc | 107nC @ 18V | 18V | +22V, -4V |
