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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPP65R420CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r420cfdxksa2-datasheets-7593.pdf | TO-220-3 | 18 Weeks | 650V | 83.3W Tc | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 300μA | 8.7A Tc | 31.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS4C08NTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvtfs4c08ntag-datasheets-1127.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 17 hours ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 31W | 1 | FET General Purpose Power | S-PDSO-F5 | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.1W Ta 31W Tc | 55A | 253A | 0.0059Ohm | 20 mJ | N-Channel | 1113pF @ 15V | 5.9m Ω @ 30A, 10V | 2.2V @ 250μA | 17A Ta | 18.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| TK6Q65W,S1Q | Toshiba Semiconductor and Storage | $2.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-251-3 Stub Leads, IPak | 16 Weeks | I-PAK | 390pF | 5.8A | 650V | 60W Tc | N-Channel | 390pF @ 300V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180μA | 5.8A Ta | 11nC @ 10V | 1.05 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY1R6N100D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 100W Tc | N-Channel | 645pF @ 25V | 10 Ω @ 800mA, 0V | 4.5V @ 100μA | 1.6A Tj | 27nC @ 5V | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4H013NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs4h013nft3g-datasheets-7605.pdf | 8-PowerTDFN | Lead Free | 38 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 269A | 25V | 2.7W Ta 104W Tc | N-Channel | 3923pF @ 12V | 0.9m Ω @ 30A, 10V | 2.1V @ 250μA | 43A Ta 269A Tc | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R280P6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r280p6xksa1-datasheets-3499.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 12 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 13.8A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 104W Tc | 39A | 0.28Ohm | 285 mJ | N-Channel | 1190pF @ 100V | 280m Ω @ 5.2A, 10V | 4.5V @ 430μA | 13.8A Tc | 25.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMP4025SFG-7 | Diodes Incorporated | $0.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp4025sfg13-datasheets-7826.pdf | 8-PowerVDFN | 3.35mm | 800μm | 3.35mm | 16 Weeks | 72.007789mg | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | Single | Other Transistors | 6.9 ns | 14.7ns | 30.9 ns | 53.7 ns | 7.2A | 20V | 40V | 810mW Ta | P-Channel | 1643pF @ 20V | 25m Ω @ 3A, 10V | 1.8V @ 250μA | 4.65A Ta | 14nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| PSMN7R8-120PSQ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn7r8120psq-datasheets-7613.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 6.000006g | 3 | NO | 3 | 1 | Single | 1 | 45.5 ns | 55.3ns | 60.8 ns | 151.8 ns | 70A | 20V | 120V | SILICON | DRAIN | SWITCHING | 349W Tc | TO-220AB | 280A | 0.0079Ohm | 120V | N-Channel | 9473pF @ 60V | 7.9m Ω @ 25A, 10V | 4V @ 1mA | 70A Tc | 167nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPA65R420CFDXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp65r420cfdxksa2-datasheets-7593.pdf | TO-220-3 Full Pack | 18 Weeks | 650V | 31.2W Tc | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 300μA | 8.7A Tc | 31.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP80N06S4L07AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipp80n06s4l07aksa2-datasheets-7616.pdf | TO-220-3 | 10mm | 15.65mm | 4.4mm | 3 | 6.000006g | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | NO | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 10 ns | 50 ns | 80A | 16V | 60V | SILICON | DRAIN | 79W Tc | TO-220AB | 0.0064Ohm | N-Channel | 5680pF @ 25V | 6.7m Ω @ 80A, 10V | 2.2V @ 40μA | 80A Tc | 75nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| RJK0655DPB-00#J5 | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/renesaselectronicsamerica-rjk0655dpb00j5-datasheets-7566.pdf | SC-100, SOT-669 | 16 Weeks | 5 | yes | No | 5 | 14 ns | 7.8ns | 11 ns | 34 ns | 35A | 20V | 60V | 60W Tc | N-Channel | 2550pF @ 10V | 6.7m Ω @ 17.5A, 10V | 35A Ta | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMYS2D2N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys2d2n06cltwg-datasheets-7622.pdf | SOT-1023, 4-LFPAK | 33 Weeks | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.9W Ta 134W Tc | N-Channel | 4850pF @ 25V | 1.9m Ω @ 50A, 10V | 2V @ 180μA | 31A Ta 185A Tc | 69nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK5033DPP-M0#T2 | Renesas Electronics America | $8.43 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk5033dppm0t2-datasheets-7572.pdf | TO-220-3 Full Pack | 16 Weeks | NOT SPECIFIED | 3 | NOT SPECIFIED | 6A | 500V | 27.4W Tc | N-Channel | 600pF @ 25V | 1.3 Ω @ 3A, 10V | 6A Ta | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOI11S60 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aoi11s60-datasheets-8030.pdf | TO-251-3 Stub Leads, IPak | 3 | 16 Weeks | 3 | SINGLE | 3 | 208W | 1 | 11A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 208W Tc | 45A | N-Channel | 545pF @ 100V | 399m Ω @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2630T1R-E2-AX | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2630t1re2ax-datasheets-7575.pdf | 6-PowerWDFN | 16 Weeks | 6 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 6 | 2.5W | 1 | Other Transistors | 9.2 ns | 3.9ns | 49 ns | 76 ns | 7A | 8V | Single | 12V | 2.5W Ta | 7A | P-Channel | 1260pF @ 10V | 59m Ω @ 3.5A, 1.8V | 7A Ta | 11.3nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTA60N10T-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 100V | 176W Tc | N-Channel | 2650pF @ 25V | 18m Ω @ 25A, 10V | 4.5V @ 50μA | 60A Tc | 49nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6566 | Alpha & Omega Semiconductor Inc. | $0.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aon6566-datasheets-8010.pdf | 8-PowerSMD, Flat Leads | 18 Weeks | 32A | 30V | 6W Ta 25W Tc | N-Channel | 1550pF @ 15V | 5m Ω @ 20A, 10V | 2.4V @ 250μA | 29A Ta 32A Tc | 33nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRF540Z | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-auirf540z-datasheets-7586.pdf | TO-220-3 | 10.66mm | 16.51mm | 4.82mm | 3 | 16 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | No | Single | 92W | 1 | FET General Purpose Power | 15 ns | 51ns | 39 ns | 43 ns | 36A | 20V | SILICON | SWITCHING | 2V | 92W Tc | TO-220AB | 0.0265Ohm | 100V | N-Channel | 1770pF @ 25V | 2 V | 26.5m Ω @ 22A, 10V | 4V @ 250μA | 36A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AO4459 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 8 | 3.1W | 1 | 6.5A | 20V | 30V | 3.1W Ta | P-Channel | 830pF @ 15V | 46m Ω @ 6.5A, 10V | 2.5V @ 250μA | 6.5A Ta | 16nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT68M8LSS-13 | Diodes Incorporated | $0.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt68m8lss13-datasheets-7529.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 20 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.9W Ta | 12.1A | 100A | 0.0085Ohm | 54.2 mJ | N-Channel | 2107pF @ 30V | 8.5m Ω @ 13.5A, 10V | 3V @ 250μA | 28.9A Tc | 31.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| GKI06259 | Sanken | $0.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/sanken-gki06259-datasheets-7518.pdf | 8-PowerTDFN | Lead Free | 12 Weeks | 8 | NOT SPECIFIED | NOT SPECIFIED | 6A | 60V | 3.1W Ta 40W Tc | N-Channel | 1050pF @ 25V | 21m Ω @ 12.5A, 10V | 2.5V @ 250μA | 6A Ta | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA16DN-T1-GE3 | Vishay Siliconix | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | PowerPAK® 1212-8 | 14 Weeks | Unknown | 8 | EAR99 | 3.5W | NOT SPECIFIED | SISA16 | NOT SPECIFIED | 16A | 30V | N-Channel | 2060pF @ 15V | 6.8m Ω @ 15A, 10V | 2.3V @ 250μA | 16A Ta | 47nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7264E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 5 | 18 Weeks | EAR99 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 27.5W Tc | 28A | 80A | 0.0095Ohm | 43 mJ | N-Channel | 1100pF @ 30V | 9.5m Ω @ 17A, 10V | 2.4V @ 250μA | 28A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RSR020P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rsr020p03tl-datasheets-7441.pdf | -30V | -2A | SC-96 | Lead Free | 3 | 20 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 8 ns | 10ns | 11 ns | 35 ns | 2A | 20V | SWITCHING | 30V | 1W Ta | 2A | 0.12Ohm | -30V | P-Channel | 370pF @ 10V | 120m Ω @ 2A, 10V | 2A Ta | 4.3nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| DMN3010LFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3010lfg7-datasheets-1873.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) | 4.5 ns | 19.6ns | 10.7 ns | 31 ns | 30A | 20V | 30V | 900mW Ta | N-Channel | 2075pF @ 15V | 8.5m Ω @ 18A, 10V | 2.5V @ 250μA | 11A Ta 30A Tc | 37nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7450DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 14 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6110SFDFQ-7 | Diodes Incorporated | $0.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp6110sfdfq13-datasheets-7194.pdf | 6-UDFN Exposed Pad | 17 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 60V | 760mW Ta | P-Channel | 969pF @ 30V | 110m Ω @ 4.5A, 10V | 3V @ 250μA | 3.5A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6528 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerSMD, Flat Leads | 18 Weeks | 30V | 25W Tc | N-Channel | 1037pF @ 15V | 6.3m Ω @ 20A, 10V | 2.2V @ 250μA | 30A Tc | 22nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSP21307 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 30V | 3.1W Ta | P-Channel | 1995pF @ 15V | 11.5m Ω @ 14A, 10V | 2.3V @ 250μA | 14A Ta | 50nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y98-80EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y9880ex-datasheets-7523.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 1 | 3.9 ns | 3.5ns | 3.7 ns | 7.3 ns | 12.3A | 20V | 80V | SILICON | DRAIN | SWITCHING | 37W Tc | MO-235 | 0.098Ohm | 9.02 mJ | 80V | N-Channel | 498pF @ 25V | 98m Ω @ 5A, 10V | 4V @ 1mA | 12.3A Tc | 8.5nC @ 10V | 10V | ±20V |
