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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Operating Temperature (Min) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTMFS5113PLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | RoHS Compliant | 16 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFSL5615PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfsl5615pbf-datasheets-7889.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 40 | 144W | 1 | 8.9 ns | 23.1ns | 13.1 ns | 17.2 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | AMPLIFIER | 144W Tc | 140A | 0.042Ohm | 109 mJ | 150V | N-Channel | 1750pF @ 50V | 42m Ω @ 21A, 10V | 5V @ 100μA | 33A Tc | 40nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRL8114PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/infineontechnologies-irl8114pbf-datasheets-7898.pdf | TO-220-3 | Lead Free | 16 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 90A | 30V | 115W Tc | N-Channel | 2660pF @ 15V | 4.5m Ω @ 40A, 10V | 2.25V @ 250μA | 90A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL530STRRPBF | Vishay Siliconix | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irl530strrpbf-datasheets-7905.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.7W | 1 | D2PAK | 930pF | 4.7 ns | 100ns | 48 ns | 22 ns | 15A | 10V | 100V | 3.7W Ta 88W Tc | 160mOhm | N-Channel | 930pF @ 25V | 160mOhm @ 9A, 5V | 2V @ 250μA | 15A Tc | 28nC @ 5V | 160 mΩ | 4V 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB70N12S311ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipb70n12s311atma1-datasheets-7908.pdf | 2 | 14 Weeks | yes | EAR99 | AEC-Q101 | YES | SINGLE | GULL WING | NOT SPECIFIED | -55°C | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 280A | 0.0113Ohm | 410 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCB260N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcb260n65s3-datasheets-7916.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 13 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 90W Tc | N-Channel | 1010pF @ 400V | 260m Ω @ 6A, 10V | 4.5V @ 1.2mA | 12A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN90H8D5HCTI | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn90h8d5hcti-datasheets-7921.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 17 Weeks | not_compliant | e3 | Matte Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 30W Tc | TO-220AB | 2.5A | 3A | 7Ohm | 97 mJ | N-Channel | 470pF @ 25V | 7 Ω @ 1A, 10V | 5V @ 250μA | 2.5A Tc | 7.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC010N04LSCATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 39 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8588DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8588dc-datasheets-7924.pdf | 5 | 8 Weeks | 32.13mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | 3W | DUAL | Single | 41W | 1 | FET General Purpose Power | S-PDSO-N5 | 1.695nF | 8 ns | 3ns | 2 ns | 25 ns | 40A | 12V | DRAIN | SWITCHING | N-CHANNEL | 25V | METAL-OXIDE SEMICONDUCTOR | 1.2V | MO-240BA | 17A | 60A | 5.7mOhm | 29 mJ | 25V | 1.2 V | 5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| AOB266L | Alpha & Omega Semiconductor Inc. | $1.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 268W | 1 | FET General Purpose Powers | 140A | 20V | Single | 60V | 2.1W Ta 268W Tc | N-Channel | 6800pF @ 30V | 3.2m Ω @ 20A, 10V | 3.2V @ 250μA | 18A Ta 140A Tc | 80nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50R399CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50r399cpxksa1-datasheets-7949.pdf | TO-220-3 | 10.36mm | 15.95mm | 4.57mm | Lead Free | 3 | 8 Weeks | No SVHC | 3 | yes | e3 | Tin (Sn) | Halogen Free | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 83W | 1 | FET General Purpose Powers | Not Qualified | 35 ns | 14ns | 14 ns | 80 ns | 9A | 20V | 500V | SILICON | ISOLATED | SWITCHING | 3V | 83W Tc | TO-220AB | 9A | 20A | 215 mJ | 500V | N-Channel | 890pF @ 100V | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 9A Ta | 4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPL60R385CPAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 2A (4 Weeks) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipl60r385cpauma1-datasheets-7868.pdf | 4-PowerTSFN | 4 | 40 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | NO LEAD | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | S-PSSO-N4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 83W Tc | 27A | 0.385Ohm | 227 mJ | N-Channel | 790pF @ 100V | 385m Ω @ 5.2A, 10V | 3.5V @ 340μA | 9A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK3R1E04PL,S1X | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Through Hole | 175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | TO-220-3 | 12 Weeks | 40V | 87W Tc | N-Channel | 4670pF @ 20V | 3.8m Ω @ 30A, 4.5V | 2.4V @ 500μA | 100A Tc | 63.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP50N12S3L15AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipi50n12s3l15aksa1-datasheets-7674.pdf | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 50A | 200A | 0.0209Ohm | 330 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN009-100P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn009100p127-datasheets-7874.pdf | TO-220-3 | 25.4mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 453.59237mg | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 230W | 1 | 38 ns | 59ns | 43 ns | 120 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 230W Tc | 400A | 0.0088Ohm | 120 mJ | 100V | N-Channel | 8250pF @ 25V | 8.8m Ω @ 25A, 10V | 4V @ 1mA | 75A Tc | 156nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| AOT1404L | Alpha & Omega Semiconductor Inc. | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | 417W | 1 | FET General Purpose Power | 220A | 20V | Single | 40V | 2.1W Ta 417W Tc | N-Channel | 4300pF @ 20V | 4.2m Ω @ 20A, 10V | 3.7V @ 250μA | 15A Ta 220A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50N10S3L16AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp50n10s3l16aksa1-datasheets-9101.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | Contains Lead | 3 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 10 ns | 5ns | 28 ns | 50A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | 100W Tc | 200A | 0.0209Ohm | N-Channel | 4180pF @ 25V | 15.7m Ω @ 50A, 10V | 2.4V @ 60μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R380C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r380c6xksa1-datasheets-7796.pdf | TO-220-3 | 3 | yes | EAR99 | HIGH VOLTAGE | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 83W Tc | TO-220AB | 10.6A | 30A | 0.38Ohm | 210 mJ | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C13NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntmfs4c13nt1g-datasheets-0957.pdf | 8-PowerTDFN | Lead Free | 16 Weeks | 5 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | YES | NOT SPECIFIED | 5 | Single | NOT SPECIFIED | FET General Purpose Power | 38A | 20V | 30V | 750mW Ta | N-Channel | 770pF @ 15V | 9.1m Ω @ 30A, 10V | 2.1V @ 250μA | 7.2A Ta 38A Tc | 15.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C612NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c612nlaft3g-datasheets-7806.pdf | 8-PowerTDFN, 5 Leads | 39 Weeks | 60V | 3.8W Ta 167W Tc | N-Channel | 6660pF @ 25V | 1.36m Ω @ 50A, 10V | 2V @ 250μA | 38A Ta 250A Tc | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8870 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fdp8870-datasheets-7808.pdf | 30V | 160A | TO-220AB | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 10 Weeks | 1.8g | No SVHC | 4.1MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | 160W | Single | 160W | 1 | FET General Purpose Power | 5.2nF | 11 ns | 105ns | 46 ns | 70 ns | 156A | 20V | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 4.1mOhm | 30V | 2.5 V | 4.1 mΩ | ||||||||||||||||||||||||||||||||||||||||||
| IPD100N04S4L02ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd100n04s402atma1-datasheets-9112.pdf | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB80P03P405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb80p03p405atma1-datasheets-7826.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 35 ns | 10ns | 20 ns | 70 ns | 80A | 20V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 137W Tc | 0.0047Ohm | 410 mJ | P-Channel | 10300pF @ 25V | 4.7m Ω @ 80A, 10V | 4V @ 253μA | 80A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMTH4008LFDFW-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 6-UDFN Exposed Pad | 23 Weeks | e3 | Matte Tin (Sn) | 260 | 30 | 40V | 990mW Ta | N-Channel | 1030pF @ 20V | 11.5m Ω @ 10A, 10V | 3V @ 250μA | 11.6A Ta | 14.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMJS1D0N04CTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmjs1d0n04ctwg-datasheets-7839.pdf | 8-PowerSMD, Gull Wing | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.9W Ta 166W Tc | N-Channel | 6100pF @ 25V | 0.92m Ω @ 50A, 10V | 3.5V @ 190μA | 46A Ta 300A Tc | 86nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2540N3-G-P002 | Microchip Technology | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tp2540n8g-datasheets-0375.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 740mW | 1 | 10 ns | 10ns | 13 ns | 20 ns | 86mA | 20V | SILICON | SWITCHING | 400V | 400V | 740mW Ta | 0.086A | 25 pF | P-Channel | 125pF @ 25V | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 86mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R380E6XKSA1 |
Min: 1 Mult: 1 |
0 | 0x0x0 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6H858NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs6h858nwft1g-datasheets-7859.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.5W Ta 42W Tc | N-Channel | 510pF @ 40V | 20.7m Ω @ 5A, 10V | 4V @ 30μA | 8.4A Ta 29A Tc | 8.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB11S60L | Alpha & Omega Semiconductor Inc. | $1.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 178W | 1 | TO-263 (D2Pak) | 545pF | 11A | 30V | 600V | 178W Tc | N-Channel | 545pF @ 100V | 399mOhm @ 3.8A, 10V | 4.1V @ 250μA | 11A Tc | 11nC @ 10V | 399 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR872ADP-T1-RE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishay-sir872adpt1ge3-datasheets-5506.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 104W Tc | N-Channel | 1286pF @ 75V | 18mOhm @ 20A, 10V | 4.5V @ 250μA | 53.7A Tc | 47nC @ 10V | 7.5V 10V | ±20V |
