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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TP2540N3-G-P002 | Microchip Technology | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/microchiptechnology-tp2540n8g-datasheets-0375.pdf | TO-226-3, TO-92-3 (TO-226AA) | 3 | 5 Weeks | 453.59237mg | 3 | EAR99 | BOTTOM | 1 | Single | 740mW | 1 | 10 ns | 10ns | 13 ns | 20 ns | 86mA | 20V | SILICON | SWITCHING | 400V | 400V | 740mW Ta | 0.086A | 25 pF | P-Channel | 125pF @ 25V | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 86mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0455DPB-00#J5 | Renesas Electronics America | $2.68 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/renesaselectronicsamerica-rjk0455dpb00j5-datasheets-7774.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 4 | 60W | 1 | FET General Purpose Powers | R-PSSO-G4 | 12 ns | 6ns | 7.2 ns | 32 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 60W Tc | 0.0038Ohm | N-Channel | 2550pF @ 10V | 3.8m Ω @ 22.5A, 10V | 45A Ta | 34nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y29-40EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y2940ex-datasheets-7536.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 37W | 1 | 4.2 ns | 5.5ns | 5.1 ns | 6 ns | 26A | 20V | 40V | SILICON | DRAIN | SWITCHING | 37W Tc | MO-235 | 0.029Ohm | 8.7 mJ | 40V | N-Channel | 492pF @ 25V | 29m Ω @ 5A, 10V | 4V @ 1mA | 26A Tc | 7.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMT4001LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt4001lps13-datasheets-7780.pdf | 8-PowerTDFN | 19 Weeks | not_compliant | e3 | Matte Tin (Sn) | 40V | 2.6W | N-Channel | 12121pF @ 20V | 1m Ω @ 30A, 10V | 3V @ 250μA | 100A Tc | 160.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7454DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7454dpt1e3-datasheets-8932.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 33MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 10ns | 10 ns | 35 ns | 7.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 5A | 30A | 100V | N-Channel | 34m Ω @ 7.8A, 10V | 4V @ 250μA | 5A Ta | 30nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SUD50N04-09H-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0409he3-datasheets-7783.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 2 | yes | EAR99 | e3 | MATTE TIN OVER NICKEL | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 8.33W | 1 | FET General Purpose Power | Not Qualified | 20ns | 11 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 83.3W Tc | 0.009Ohm | 40V | N-Channel | 3700pF @ 25V | 9m Ω @ 20A, 10V | 5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IXTA4N80P-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 28 Weeks | 800V | 100W Tc | N-Channel | 750pF @ 25V | 3.4 Ω @ 1.8A, 10V | 5.5V @ 100μA | 3.6A Tc | 14.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2522N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tp2522n8g-datasheets-7722.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 15 Weeks | 52.786812mg | 12Ohm | 4 | EAR99 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | Other Transistors | Not Qualified | R-PSSO-F3 | 10 ns | 15ns | 15 ns | 20 ns | -260mA | 20V | SILICON | DRAIN | SWITCHING | 220V | 1.6W Ta | 0.26A | 2A | -220V | P-Channel | 125pF @ 25V | 12 Ω @ 200mA, 10V | 2.4V @ 1mA | 260mA Tj | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BSC037N08NS5TATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ 5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsc037n08ns5tatma1-datasheets-7728.pdf | 8-PowerTDFN | 26 Weeks | 80V | 3W Ta 136W Tc | N-Channel | 4200pF @ 40V | 3.7m Ω @ 50A, 10V | 3.8V @ 72μA | 22A Ta 100A Tc | 58nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86260ET150 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc86260et150-datasheets-7729.pdf | 8-PowerWDFN | Lead Free | 10 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Single | 9.5 ns | 2ns | 3.3 ns | 17 ns | 25A | 20V | 2.8W Ta 65W Tc | 150V | N-Channel | 1330pF @ 75V | 34m Ω @ 5.4A, 10V | 4V @ 250μA | 5.4A Ta 25A Tc | 21nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R380E6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa60r380e6xksa1-datasheets-7737.pdf | TO-220-3 Full Pack | 3 | 12 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 31W Tc | TO-220AB | 10.6A | 30A | 0.38Ohm | 210 mJ | N-Channel | 700pF @ 100V | 380m Ω @ 3.8A, 10V | 3.5V @ 320μA | 10.6A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDPF39N20TLDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdpf39n20-datasheets-3648.pdf | TO-220-3 Full Pack | 4 Weeks | 2.7237g | ACTIVE (Last Updated: 3 weeks ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | FET General Purpose Power | 200V | 37W Tc | 39A | N-Channel | 2130pF @ 25V | 66m Ω @ 19.5A, 10V | 5V @ 250μA | 39A Tc | 49nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3705ZLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irl3705zpbf-datasheets-2074.pdf | 55V | 86A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 12 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | 17 ns | 240ns | 83 ns | 26 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 130W Tc | 0.008Ohm | 55V | N-Channel | 2880pF @ 25V | 8m Ω @ 52A, 10V | 3V @ 250μA | 75A Tc | 60nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| FQI7N60TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqb7n60tm-datasheets-9436.pdf | 600V | 7.4A | TO-262-3 Long Leads, I2Pak, TO-262AA | Lead Free | 3 | 5 Weeks | 2.084g | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 3.13W | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | 30 ns | 80ns | 60 ns | 65 ns | 7.4A | 30V | SILICON | SWITCHING | 3.13W Ta 142W Tc | 29.6A | 1Ohm | 580 mJ | 600V | N-Channel | 1430pF @ 25V | 1 Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 38nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| AOT22N50L | Alpha & Omega Semiconductor Inc. | $0.96 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | 18 Weeks | No | 417W | 1 | 22A | 500V | 417W Tc | N-Channel | 3710pF @ 25V | 260m Ω @ 11A, 10V | 4.5V @ 250μA | 22A Tc | 83nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50N12S3L15AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi50n12s3l15aksa1-datasheets-7674.pdf | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 50A | 200A | 0.0209Ohm | 330 mJ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS4510TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfs4510trlpbf-datasheets-7679.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | No SVHC | 3 | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 32ns | 28 ns | 61A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 140W Tc | 250A | 100V | N-Channel | 3180pF @ 50V | 13.9m Ω @ 37A, 10V | 4V @ 100μA | 61A Tc | 87nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TPCC8093,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | 150°C | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 20V | 1.9W Ta 30W Tc | N-Channel | 1860pF @ 10V | 5.8m Ω @ 10.5A, 4.5V | 1.2V @ 500μA | 21A Ta | 16nC @ 5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R280CFD7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CFD7 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r280cfd7atma1-datasheets-7698.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 650V | 51W Tc | N-Channel | 807pF @ 400V | 280m Ω @ 3.6A, 10V | 4.5V @ 180μA | 9A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF720STRRPBF | Vishay Siliconix | $0.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf720spbf-datasheets-8875.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | D2PAK | 410pF | 10 ns | 14ns | 13 ns | 30 ns | 3.3A | 20V | 400V | 3.1W Ta 50W Tc | 1.8Ohm | N-Channel | 410pF @ 25V | 1.8Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPI50R399CPXKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipi50r399cpxksa1-datasheets-9206.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.2mm | 9.45mm | 4.5mm | 3 | 8 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 83W | 1 | 35 ns | 14ns | 80 ns | 9A | 20V | 500V | SILICON | DRAIN | SWITCHING | 83W Tc | 9A | 20A | 215 mJ | 560V | N-Channel | 890pF @ 100V | 399m Ω @ 4.9A, 10V | 3.5V @ 330μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPP90R1K0C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp90r1k0c3xksa1-datasheets-7717.pdf | TO-220-3 | 3 | 6 Weeks | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 900V | 900V | 89W Tc | TO-220AB | 5.7A | 12A | 1Ohm | 97 mJ | N-Channel | 850pF @ 100V | 1 Ω @ 3.3A, 10V | 3.5V @ 370μA | 5.7A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP65R420CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r420cfdxksa1-datasheets-7631.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 83.3W | 1 | R-PSFM-T3 | 10 ns | 7ns | 8 ns | 38 ns | 8.7A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 83.3W Tc | TO-220AB | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPA65R420CFDXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp65r420cfdxksa1-datasheets-7631.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 650V | 31.2W Tc | TO-220AB | 8.7A | 27A | 0.42Ohm | 227 mJ | N-Channel | 870pF @ 100V | 420m Ω @ 3.4A, 10V | 4.5V @ 340μA | 8.7A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN030-150P,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/nexperiausainc-psmn030150p127-datasheets-7649.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | NO | 3 | Single | 250W | 1 | 18 ns | 71ns | 76 ns | 97 ns | 55.5A | 20V | 150V | SILICON | DRAIN | SWITCHING | 250W Tc | 222A | 150V | N-Channel | 3680pF @ 25V | 30m Ω @ 25A, 10V | 4V @ 1mA | 55.5A Tc | 98nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AUIRFU8405 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount, Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-auirfu8405-datasheets-7653.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 26 Weeks | No SVHC | 3 | EAR99 | No | 1 | Single | 163W | FET General Purpose Power | 12 ns | 80ns | 51 ns | 51 ns | 100A | 20V | 3V | 163W Tc | 40V | N-Channel | 5171pF @ 25V | 3 V | 1.98m Ω @ 90A, 10V | 3.9V @ 100μA | 100A Tc | 155nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA2631T1R-E2-AX | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-upa2631t1re2ax-datasheets-7658.pdf | 6-PowerWDFN | 16 Weeks | 6 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 6 | Other Transistors | 9.5 ns | 5.5ns | 76 ns | 89 ns | 6A | 8V | Single | 20V | 2.5W Ta | 6A | P-Channel | 1240pF @ 10V | 62m Ω @ 3A, 1.8V | 6A Ta | 12.5nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB3652 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp3652-datasheets-4713.pdf&product=onsemiconductor-fdb3652-6851894 | 100V | 61A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 6.35mm | 6.35mm | 6.35mm | Lead Free | 2 | 36 Weeks | 1.31247g | No SVHC | 16MOhm | 3 | ACTIVE, NOT REC (Last Updated: 20 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 150W | 1 | R-PSSO-G2 | 12 ns | 85ns | 45 ns | 26 ns | 61A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | 9A | 100V | N-Channel | 2880pF @ 25V | 4 V | 16m Ω @ 61A, 10V | 4V @ 250μA | 9A Ta 61A Tc | 53nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7104DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7104dnt1ge3-datasheets-7669.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Powers | S-XDSO-C5 | 10 ns | 26.1A | 12V | SILICON | DRAIN | SWITCHING | 3.8W Ta 52W Tc | 35A | 60A | 0.0037Ohm | 12V | N-Channel | 2800pF @ 6V | 3.7m Ω @ 26.1A, 4.5V | 1.8V @ 250μA | 35A Tc | 70nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SI8401DB-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8401dbt1e1-datasheets-3105.pdf | 4-XFBGA, CSPBGA | 1.6mm | 360μm | 1.6mm | Lead Free | 4 | 33 Weeks | Unknown | 65mOhm | 4 | yes | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | BALL | 260 | 4 | 1 | Single | 40 | 2.77W | 1 | Other Transistors | 17 ns | 28ns | 28 ns | 88 ns | -3.6A | 12V | SILICON | SWITCHING | 20V | -4.5V | 1.47W Ta | -20V | P-Channel | -4.5 V | 65m Ω @ 1A, 4.5V | 1.4V @ 250μA | 3.6A Ta | 17nC @ 4.5V | 2.5V 4.5V | ±12V |
