Products
Manufacturer
RFQ
NEWS
ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPD60R600P7SE8228AUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 600V | 30W Tc | N-Channel | 363pF @ 400V | 600m Ω @ 1.7A, 10V | 4V @ 80μA | 6A Tc | 9nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU1N80TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-fqd1n80tm-datasheets-8761.pdf | 800V | 1A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2.5W | 1 | FET General Purpose Power | 10 ns | 25ns | 25 ns | 15 ns | 1A | 30V | SILICON | SWITCHING | 2.5W Ta 45W Tc | 1A | 4A | 90 mJ | 800V | N-Channel | 195pF @ 25V | 20 Ω @ 500mA, 10V | 5V @ 250μA | 1A Tc | 7.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIA813DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia813djt1ge3-datasheets-3583.pdf | PowerPAK® SC-70-6 Dual | 6 | 21 Weeks | 6 | yes | EAR99 | No | 260 | 6 | 40 | 1 | Other Transistors | 10 ns | 35ns | 50 ns | 40 ns | -4.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1.9W Ta 6.5W Tc | 8A | 0.094Ohm | P-Channel | 355pF @ 10V | 94m Ω @ 2.8A, 4.5V | 1V @ 250μA | 4.5A Tc | 13nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||
| NVMFS5C460NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN, 5 Leads | 31 Weeks | 40V | 3.6W Ta 50W Tc | N-Channel | 1300pF @ 25V | 4.5m Ω @ 35A, 10V | 2V @ 250μA | 21A Ta 78A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHD101NQ03LT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-phd101nq03lt118-datasheets-3587.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 3 | Single | 166W | 1 | R-PSSO-G2 | 23 ns | 90ns | 33 ns | 37 ns | 75A | 20V | 30V | SILICON | DRAIN | SWITCHING | 166W Tc | 240A | 0.0075Ohm | 185 mJ | 30V | N-Channel | 2180pF @ 25V | 5.5m Ω @ 25A, 10V | 2.5V @ 1mA | 75A Tc | 23nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NTMFS4937NCT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN, 5 Leads | 16 Weeks | 920mW | Single | 2.6W | 10.2A | 30V | N-Channel | 2516pF @ 15V | 4m Ω @ 30A, 10V | 2.2V @ 250μA | 10.2A Ta | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT12H090LFDF4-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt12h090lfdf413-datasheets-3530.pdf | 6-PowerXDFN | 18 Weeks | 115V | 900mW Ta | N-Channel | 251pF @ 50V | 90m Ω @ 3.5A, 10V | 2.2V @ 250μA | 3.4A Ta | 6nC @ 10V | 3V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH4008LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN | 22 Weeks | not_compliant | 40V | 2.99W Ta 55.5W Tc | N-Channel | 1088pF @ 20V | 8.8m Ω @ 10A, 10V | 3V @ 250μA | 14.4A Ta 64.8A Tc | 15.3nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVD3055L170T4G-VF01 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvd3055l170t4gvf01-datasheets-3500.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 22 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | 60V | 28.5W Ta | N-Channel | 275pF @ 25V | 170m Ω @ 4.5A, 5V | 2V @ 250μA | 9A Ta | 10nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2005UFG-13 | Diodes Incorporated | $0.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2005ufg13-datasheets-3598.pdf | 8-PowerVDFN | 18 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 20V | 2.2W Ta | P-Channel | 4670pF @ 10V | 4m Ω @ 15A, 4.5V | 900mV @ 250μA | 89A Tc | 125nC @ 10V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C456NLAFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfs5c456nlaft3g-datasheets-3546.pdf | 8-PowerTDFN, 5 Leads | 40V | 3.6W Ta 55W Tc | N-Channel | 1600pF @ 25V | 3.7m Ω @ 20A, 10V | 2V @ 50μA | 22A Ta 87A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86381-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd86381f085-datasheets-3548.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 4 Weeks | 260.37mg | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 25A | SILICON | DRAIN | SWITCHING | 80V | 80V | 48.4W Tj | 0.021Ohm | 14 mJ | N-Channel | 866pF @ 40V | 21m Ω @ 25A, 10V | 4V @ 250μA | 25A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4985NFT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntmfs4985nft1g-datasheets-7131.pdf | 8-PowerTDFN | Lead Free | 5 | 2 Weeks | 5 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | 1 | 1 | FET General Purpose Power | 11 ns | 32ns | 6 ns | 21 ns | 65A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.63W Ta 22.73W Tc | 30V | N-Channel | 2100pF @ 15V | 3.4m Ω @ 30A, 10V | 2.3V @ 1mA | 17.5A Ta 65A Tc | 30.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IPD60R2K0C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd60r2k0c6atma1-datasheets-3470.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3 | yes | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 7 ns | 50 ns | 30 ns | 2.4A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 22.3W Tc | 6A | 2Ohm | N-Channel | 140pF @ 100V | 2 Ω @ 760mA, 10V | 3.5V @ 60μA | 2.4A Tc | 6.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPS65R1K0CEAKMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips65r1k0ceakma2-datasheets-3479.pdf | TO-251-3 Stub Leads, IPak | 18 Weeks | 650V | 68W Tc | N-Channel | 328pF @ 100V | 1 Ω @ 1.5A, 10V | 3.5V @ 200μA | 7.2A Tc | 15.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PHD97NQ03LT,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-phd97nq03lt118-datasheets-3480.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | 3 | EAR99 | No | 8541.29.00.75 | e3 | Tin (Sn) | YES | GULL WING | 260 | 3 | Single | 30 | 107W | 1 | R-PSSO-G2 | 18 ns | 33ns | 12 ns | 20 ns | 75A | 20V | 25V | SILICON | DRAIN | SWITCHING | 107W Tc | 0.0106Ohm | 60 mJ | 25V | N-Channel | 1570pF @ 12V | 6.3m Ω @ 25A, 10V | 2.15V @ 1mA | 75A Tc | 11.7nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| NVMFS5C468NWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c468nt1g-datasheets-1076.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.5W Ta 28W Tc | N-Channel | 420pF @ 25V | 12m Ω @ 10A, 10V | 3.5V @ 250μA | 12A Ta 35A Tc | 7.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C466NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c466nlwft1g-datasheets-3486.pdf | 8-PowerTDFN, 5 Leads | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.5W Ta 37W Tc | N-Channel | 860pF @ 25V | 7.3m Ω @ 10A, 10V | 2.2V @ 30μA | 16A Ta 52A Tc | 16nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3003LFG-7 | Diodes Incorporated | $2.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt3003lfg13-datasheets-3406.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100A | 30V | 2.4W Ta 62W Tc | N-Channel | 2370pF @ 15V | 3.2m Ω @ 20A, 10V | 3V @ 250μA | 22A Ta 100A Tc | 44nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y15-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk7y1560ex-datasheets-3491.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | YES | GULL WING | 4 | 1 | Single | 94W | 1 | 7.4 ns | 9.9ns | 10.9 ns | 17.8 ns | 53A | 20V | 60V | SILICON | DRAIN | SWITCHING | 94W Tc | MO-235 | 60V | N-Channel | 1838pF @ 25V | 15m Ω @ 15A, 10V | 4V @ 1mA | 53A Tc | 24.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| DMNH3010LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmnh3010lk313-datasheets-3495.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 23 Weeks | TO-252-4L | 2.075nF | 55A | 30V | 2W Ta | N-Channel | 2075pF @ 15V | 9.5mOhm @ 18A, 10V | 2.5V @ 250μA | 15A Ta 55A Tc | 37nC @ 10V | 9.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1022UWS-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-VDFN | 16 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 260 | 30 | 12V | 900mW Ta | P-Channel | 2847pF @ 4V | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 7.2A Ta | 30nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPS60R800CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | 3 (168 Hours) | 150°C | -40°C | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ips60r800ceakma1-datasheets-3519.pdf | Contains Lead | 3 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | 600V | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 600V | METAL-OXIDE SEMICONDUCTOR | TO-251 | 15.7A | 0.8Ohm | 72 mJ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPC8092,LQ(S | Toshiba Semiconductor and Storage | $0.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 1.8nF | 2.8ns | 8.3 ns | 15A | 20V | 30V | 1W Ta | N-Channel | 1800pF @ 10V | 9mOhm @ 7.5A, 10V | 2.3V @ 200μA | 15A Ta | 25nC @ 10V | 9 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD075N03LGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd075n03lgatma1-datasheets-2793.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 47W | 1 | PG-TO252-3-11 | 1.9nF | 50A | 20V | 30V | 47W Tc | N-Channel | 1900pF @ 15V | 7.5mOhm @ 30A, 10V | 2.2V @ 250μA | 50A Tc | 18nC @ 10V | 7.5 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC883N03LSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsc883n03lsgatma1-datasheets-3230.pdf | 8-PowerTDFN | 5 | 39 Weeks | No SVHC | 8 | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 6.4 ns | 4.4ns | 4 ns | 26 ns | 98A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 34V | 34V | 2.2V | 2.5W Ta 57W Tc | 17A | 392A | 50 mJ | N-Channel | 2800pF @ 15V | 3.8m Ω @ 30A, 10V | 2.2V @ 250μA | 17A Ta 98A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| DMP2007UFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2007ufg7-datasheets-9427.pdf | 8-PowerVDFN | 17 Weeks | 8 | PowerDI3333-8 | 4.621nF | 40A | 20V | 2.3W Ta | P-Channel | 4621pF @ 10V | 5.5mOhm @ 15A, 10V | 1.3V @ 250μA | 18A Ta 40A Tc | 85nC @ 10V | 5.5 mΩ | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SFT1452-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-sft1452tlw-datasheets-3452.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 10 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | e6 | Tin/Bismuth (Sn/Bi) | 1 | FET General Purpose Power | 8 ns | 9ns | 14 ns | 13 ns | 3A | 30V | Single | 250V | 1W Ta 26W Tc | 3A | N-Channel | 210pF @ 20V | 2.4 Ω @ 1.5A, 10V | 4.5V @ 1mA | 3A Ta | 4.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ058N03MSGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz058n03msgatma1-datasheets-3157.pdf | 8-PowerTDFN | Contains Lead | 5 | 10 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | NO LEAD | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.1W | 1 | Not Qualified | R-PDSO-N5 | 3.8ns | 14A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 45W Tc | 40A | 0.0064Ohm | 55 mJ | N-Channel | 3100pF @ 15V | 5m Ω @ 20A, 10V | 2V @ 250μA | 14A Ta 40A Tc | 40nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| ZVN4210ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/diodesincorporated-zvn4210a-datasheets-7464.pdf&product=diodesincorporated-zvn4210astz-6850495 | E-Line-3 | 4.95mm | 4.95mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 1.5Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | 4 ns | 8ns | 8 ns | 20 ns | 450mA | 20V | SILICON | SWITCHING | 700mW Ta | 0.45A | 100V | N-Channel | 100pF @ 25V | 1.5 Ω @ 1.5A, 10V | 2.4V @ 1mA | 450mA Ta | 5V 10V | ±20V |
