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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPN2R805PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 45V | 2.67W Ta 104W Tc | N-Channel | 3.2nF @ 22.5V | 2.8m Ω @ 40A, 10V | 2.4V @ 300μA | 139A Ta 80A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1012UCB9-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmp1012ucb97-datasheets-3209.pdf | 9-UFBGA, WLBGA | 22 Weeks | EAR99 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | NOT SPECIFIED | NOT SPECIFIED | 10A | 8V | 890mW Ta | P-Channel | 1060pF @ 4V | 10m Ω @ 2A, 4.5V | 1.1V @ 250μA | 10A Ta | 10.5nC @ 4.5V | 2.5V 4.5V | -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT3008LFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt3008lfdf7-datasheets-3128.pdf | 6-UDFN Exposed Pad | 6 | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N6 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 800mW Ta | 10.4A | 0.01Ohm | N-Channel | 886pF @ 15V | 10m Ω @ 9A, 10V | 3V @ 250μA | 12A Ta | 14nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NTLUS4C12NTBG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntlus4c12ntag-datasheets-8851.pdf | 6-UDFN Exposed Pad | Lead Free | 30 Weeks | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | 6 | NOT SPECIFIED | 6.8A | 30V | 630mW Ta | N-Channel | 1172pF @ 15V | 9m Ω @ 9A, 10V | 2.1V @ 250μA | 6.8A Ta | 18nC @ 10V | 3.3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| AO4292E | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 100V | METAL-OXIDE SEMICONDUCTOR | 8A | 0.023Ohm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP3007SCG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp3007scg7-datasheets-3145.pdf | 8-PowerVDFN | 18 Weeks | V-DFN3333-8 | 30V | 2.4W Ta | 5.7mOhm | P-Channel | 2826pF @ 15V | 6.8mOhm @ 11.5A, 10V | 3V @ 250μA | 50A Tc | 64.2nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia477edjt1ge3-datasheets-2889.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | yes | EAR99 | No | 19W | DUAL | 1 | S-PDSO-N3 | 12A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 40A | 0.014Ohm | P-Channel | 2970pF @ 6V | 14m Ω @ 7A, 4.5V | 1V @ 250μA | 12A Tc | 87nC @ 8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPCP8J01(TE85L,F,M | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | MOSFET (Metal Oxide) | RoHS Compliant | 2007 | 8-SMD, Flat Lead | 12 Weeks | 8 | Single | 1.06W | 12ns | 90 ns | 22 ns | 32V | 2.14W Ta | -32V | P-Channel | 1760pF @ 10V | 35m Ω @ 3A, 10V | 2V @ 1mA | 5.5A Ta | 34nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DKI03038 | Sanken |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/sanken-dki03038-datasheets-3156.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 48A | 30V | 47W Tc | N-Channel | 2460pF @ 15V | 4m Ω @ 47.2A, 10V | 2.5V @ 650μA | 48A Tc | 38.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50R650CEAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 3 (168 Hours) | 150°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd50r650ceauma1-datasheets-3165.pdf | TO-252-3 | 2 | 18 Weeks | 3.949996g | 3 | yes | EAR99 | 47W | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 47W | 1 | R-PSSO-G2 | 342pF | 6 ns | 5ns | 13 ns | 27 ns | 6.1A | 20V | DRAIN | SWITCHING | N-CHANNEL | 500V | METAL-OXIDE SEMICONDUCTOR | 650mOhm | 500V | 650 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
| IPD40DP06NMATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 60V | 19W Tc | P-Channel | 260pF @ 30V | 400m Ω @ 4.3A, 10V | 4V @ 166μA | 4.3A Tc | 6.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMA008P20LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdma008p20lz-datasheets-2907.pdf | 6-PowerWDFN | 10 Weeks | 21.13402mg | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 20V | 2.4W Ta | P-Channel | 4383pF @ 10V | 13m Ω @ 2.5A, 4.5V | 1.4V @ 250μA | 12A Ta | 39nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHM3911TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfhm3911trpbf-datasheets-3098.pdf | 8-PowerTDFN | 5 | 12 Weeks | No SVHC | 92mOhm | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | S-PDSO-F5 | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 4V | 2.8W Ta 29W Tc | 3.2A | 36A | 41 mJ | N-Channel | 760pF @ 50V | 115m Ω @ 6.3A, 10V | 4V @ 35μA | 3.2A Ta 20A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| DMT12H065LFDF-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt12h065lfdf13-datasheets-3111.pdf | 6-UDFN Exposed Pad | 18 Weeks | 115V | 1W Ta | N-Channel | 252pF @ 50V | 65m Ω @ 3A, 10V | 2.2V @ 250μA | 4.3A Ta | 5.5nC @ 10V | 3V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6774 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | 8-DFN (5x6) | 3nF | 85A | 30V | 6.2W Ta 48W Tc | N-Channel | 3000pF @ 15V | 2.05mOhm @ 20A, 10V | 2.2V @ 250μA | 44A Ta 85A Tc | 60nC @ 10V | 2.05 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7153DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-si7153dnt1ge3-datasheets-7840.pdf | PowerPAK® 1212-8 | 14 Weeks | 9.5mOhm | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 52W Tc | P-Channel | 3600pF @ 15V | 9.5m Ω @ 20A, 10V | 2.5V @ 250μA | 18A Tc | 93nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS415DNT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sis415dntt1ge3-datasheets-3135.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | 8 | EAR99 | unknown | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 3.7W | 1 | S-PDSO-F5 | 38ns | 25 ns | 82 ns | 35A | -1.5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 3.7W Ta 52W Tc | 0.004Ohm | 20 mJ | -20V | P-Channel | 5460pF @ 10V | 4m Ω @ 20A, 10V | 1.5V @ 250μA | 35A Tc | 180nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||
| SQA401EEJ-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqa401eejt1ge3-datasheets-3008.pdf | PowerPAK® SC-70-6 | 12 Weeks | PowerPAK® SC-70-6 Single | 20V | 13.6W Tc | P-Channel | 375pF @ 10V | 113mOhm @ 2A, 4.5V | 1.5V @ 250μA | 2.68A Tc | 5.3nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSP32368 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-SOIC (0.154, 3.90mm Width) | 18 Weeks | 30V | 3.1W Ta | N-Channel | 2270pF @ 15V | 5.5m Ω @ 16A, 10V | 2.4V @ 250μA | 16A Ta | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3009SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3009sfg7-datasheets-2635.pdf | 8-PowerVDFN | 17 Weeks | 8 | yes | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 45A | 30V | 900mW Ta | N-Channel | 2000pF @ 15V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 16A Ta 45A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1007UCB9-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp1007ucb97-datasheets-3140.pdf | 9-UFBGA, WLBGA | 18 Weeks | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | 8V | 840mW Ta | P-Channel | 900pF @ 4V | 5.7m Ω @ 2A, 4.5V | 1.1V @ 250μA | 13.2A Ta | 8.2nC @ 4.5V | 2.5V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTS21311C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-74, SOT-457 | 18 Weeks | 30V | 2.5W Ta | P-Channel | 720pF @ 15V | 45m Ω @ 5.9A, 10V | 2.2V @ 250μA | 5.9A Ta | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C08NAT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerTDFN, 5 Leads | 16 Weeks | 30V | 2.51W Ta 25.5W Tc | N-Channel | 1670pF @ 15V | 5.8m Ω @ 18A, 10V | 2.1V @ 250μA | 16.4A Ta 52A Tc | 18.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2369BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2369bdst1ge3-datasheets-3012.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 30V | 1.3W Ta 2.5W Tc | P-Channel | 745pF @ 15V | 27mOhm @ 5A, 10V | 2.2V @ 250μA | 5.6A Ta 7.5A Tc | 19.5nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA84BDP-T1-GE3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira84bdpt1ge3-datasheets-2985.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.7W Ta 36W Tc | N-Channel | 1050pF @ 15V | 4.6mOhm @ 15A, 10V | 2.4V @ 250μA | 22A Ta 70A Tc | 32nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHA24N65EF-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha24n65efe3-datasheets-3049.pdf | TO-220-3 Full Pack | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 39W Tc | TO-220AB | 24A | 65A | 0.156Ohm | 691 mJ | N-Channel | 2774pF @ 100V | 156m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5E040TNTL | ROHM Semiconductor | $0.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 700mW Ta | N-Channel | 475pF @ 10V | 48m Ω @ 4A, 4.5V | 1.5V @ 1mA | 4A Ta | 8.3nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18M100B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1kV | 18A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 18 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 1 month ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 625W | 1 | R-PSFM-T3 | 22 ns | 20ns | 19 ns | 75 ns | 18A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1000V | 625W Tc | TO-247AD | 68A | 0.7Ohm | 1kV | N-Channel | 4845pF @ 25V | 700m Ω @ 9A, 10V | 5V @ 1mA | 18A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STN1NK60ZL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stn1nk60z-datasheets-8467.pdf | TO-261-4, TO-261AA | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | compliant | NOT SPECIFIED | STN1N | NOT SPECIFIED | 600V | 3.3W Tc | N-Channel | 94pF @ 25V | 15 Ω @ 400mA, 10V | 4.5V @ 50μA | 300mA Tc | 6.9nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT28M120L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt28m120b2-datasheets-1851.pdf | 1.2kV | 28A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 21 Weeks | 10.6g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 50 ns | 31ns | 48 ns | 170 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | 0.53Ohm | 1.2kV | N-Channel | 9670pF @ 25V | 530m Ω @ 14A, 10V | 5V @ 2.5mA | 29A Tc | 300nC @ 10V | 10V | ±30V |
