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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SISA88DN-T1-GE3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa88dnt1ge3-datasheets-2925.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 30V | 3.2W Ta 19.8W Tc | N-Channel | 985pF @ 15V | 6.7mOhm @ 10A, 10V | 2.4V @ 250μA | 16.2A Ta 40.5A Tc | 25.5nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6030ENX | ROHM Semiconductor | $8.51 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | TO-220-3 Full Pack | 10.3mm | 15.4mm | 4.8mm | Lead Free | 3 | 18 Weeks | 2.565008g | No SVHC | 3 | SINGLE | 260 | 1 | 10 | 1 | 40 ns | 55ns | 60 ns | 190 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4V | 40W Tc | TO-220AB | 80A | 600V | N-Channel | 2100pF @ 25V | 130m Ω @ 14.5A, 10V | 4V @ 1mA | 30A Tc | 85nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| BSD314SPEH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsd314speh6327xtsa1-datasheets-2951.pdf | 6-VSSOP, SC-88, SOT-363 | 2mm | 800μm | 1.25mm | Lead Free | 10 Weeks | 6 | no | EAR99 | Tin | e3 | Halogen Free | NOT SPECIFIED | Single | NOT SPECIFIED | 5.1 ns | 3.9ns | 12.4 ns | 1.5A | 20V | -30V | 30V | 500mW Ta | P-Channel | 294pF @ 15V | 140m Ω @ 1.5A, 10V | 2V @ 6.3μA | 1.5A Ta | 2.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| PMPB10UPX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmpb10upx-datasheets-2957.pdf | 6-UDFN Exposed Pad | 8 Weeks | 12V | 1.7W Ta 13mW Tc | P-Channel | 2.2nF @ 6V | 11.5m Ω @ 10A, 4.5V | 900mV @ 250μA | 10A Ta | 40nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFHS8342TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfhs8342trpbf-datasheets-2942.pdf | 6-PowerVDFN | Lead Free | 6 | 12 Weeks | No SVHC | 16MOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 2.1W | 1 | FET General Purpose Power | 5.9 ns | 15ns | 5 ns | 5.2 ns | 8.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.8V | 2.1W Ta | 8.5A | 30V | N-Channel | 600pF @ 25V | 1.8 V | 16m Ω @ 8.5A, 10V | 2.35V @ 25μA | 8.8A Ta 19A Tc | 8.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFP22N60KPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfp22n60kpbf-datasheets-2968.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 8 Weeks | 38.000013g | 3 | No | 1 | Single | 370W | 1 | TO-247-3 | 3.57nF | 26 ns | 99ns | 37 ns | 48 ns | 22A | 30V | 600V | 370W Tc | 240mOhm | N-Channel | 3570pF @ 25V | 5 V | 280mOhm @ 13A, 10V | 5V @ 250μA | 22A Tc | 150nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STF46N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf46n60m6-datasheets-2974.pdf | TO-220-3 Full Pack | 600V | 42W Tc | N-Channel | 2340pF @ 100V | 80m Ω @ 18A, 10V | 4.75V @ 250μA | 36A Tc | 53.5nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS84T116 | ROHM Semiconductor | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-bss84t116-datasheets-2828.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 16 Weeks | compliant | YES | DUAL | GULL WING | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 200mW Ta | 0.23A | 6.4Ohm | P-Channel | 34pF @ 30V | 5.3 Ω @ 230mA, 10V | 2.5V @ 100μA | 230mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT28M120L | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt28m120b2-datasheets-1851.pdf | 1.2kV | 28A | TO-264-3, TO-264AA | 26.49mm | 5.21mm | 20.5mm | Lead Free | 3 | 21 Weeks | 10.6g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY | No | e3 | PURE MATTE TIN | SINGLE | 3 | 1 | R-PSFM-T3 | 50 ns | 31ns | 48 ns | 170 ns | 29A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 1135W Tc | 0.53Ohm | 1.2kV | N-Channel | 9670pF @ 25V | 530m Ω @ 14A, 10V | 5V @ 2.5mA | 29A Tc | 300nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| APT34M120J | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-apt34m120j-datasheets-2991.pdf | 1.2kV | 34A | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 18 Weeks | 30.000004g | 4 | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 960W | 1 | 100 ns | 60ns | 90 ns | 315 ns | 35A | 30V | SILICON | ISOLATED | SWITCHING | 1200V | 960W Tc | 0.29Ohm | 2700 mJ | N-Channel | 18200pF @ 25V | 300m Ω @ 25A, 10V | 5V @ 2.5mA | 35A Tc | 560nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| RCX080N25 | ROHM Semiconductor | $1.08 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 Full Pack | Lead Free | 3 | 16 Weeks | EAR99 | not_compliant | SINGLE | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 1 | R-PSFM-T3 | 22 ns | 28ns | 14 ns | 28 ns | 8A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2.23W Ta 35W Tc | TO-220AB | 8A | 32A | 0.6Ohm | 4.66 mJ | 250V | N-Channel | 840pF @ 25V | 600m Ω @ 4A, 10V | 5V @ 1mA | 8A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| AOD66406 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 40V | 6.2W Ta 52W Tc | N-Channel | 1480pF @ 20V | 6.1m Ω @ 20A, 10V | 2.5V @ 250μA | 25A Ta 60A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8819EDB-T2-E1 | Vishay Siliconix | $0.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8819edbt2e1-datasheets-3014.pdf | 4-XFBGA | 30 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 12V | 900mW Ta | P-Channel | 650pF @ 6V | 80m Ω @ 1.5A, 3.7V | 900mV @ 250μA | 2.9A Ta | 17nC @ 8V | 1.5V 3.7V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCU80N03A-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu80n03atp-datasheets-2903.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 30V | 45W Tc | N-Channel | 2150pF @ 15V | 5.5m Ω @ 20A, 10V | 2.5V @ 250μA | 80A Tc | 52.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISA35DN-T1-GE3 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa35dnt1ge3-datasheets-3020.pdf | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 30V | 3.2W Ta 24W Tc | P-Channel | 1500pF @ 15V | 19mOhm @ 9A, 10V | 2.2V @ 250μA | 10A Ta 16A Tc | 42nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIL05N06-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-sil05n06tp-datasheets-2896.pdf | SOT-23-6 | 12 Weeks | 60V | 1.7W | N-Channel | 500pF @ 30V | 45m Ω @ 5A, 10V | 3V @ 250μA | 5A | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H025LK3-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 2.6W Ta | N-Channel | 1477pF @ 50V | 22m Ω @ 20A, 10V | 3V @ 250μA | 47.2A Tc | 21nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK34A10N1,S4X | Toshiba Semiconductor and Storage | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | TO-220-3 Full Pack | 3 | 12 Weeks | 6.000006g | 3 | yes | No | 1 | Single | 1 | 31 ns | 12ns | 18 ns | 50 ns | 34A | 20V | SILICON | ISOLATED | SWITCHING | 100V | 35W Tc | TO-220AB | 75A | 0.0095Ohm | 64 mJ | N-Channel | 2600pF @ 50V | 9.5m Ω @ 17A, 10V | 4V @ 500μA | 34A Tc | 38nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| APT37F50B | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt37f50b-datasheets-2839.pdf | 500V | 37A | TO-247-3 | 21.46mm | 5.31mm | 16.26mm | Lead Free | 3 | 22 Weeks | 38.000013g | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | FAST SWITCHING, AVALANCHE RATED | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SINGLE | 3 | 520W | 1 | FET General Purpose Power | R-PSFM-T3 | 25 ns | 29ns | 21 ns | 65 ns | 37A | 30V | SILICON | Single | DRAIN | SWITCHING | 520W Tc | TO-247AB | 780 mJ | 500V | N-Channel | 5710pF @ 25V | 150m Ω @ 18A, 10V | 5V @ 1mA | 37A Tc | 145nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| APT10M11JVRU3 | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | /files/microsemicorporation-apt10m11jvru3-datasheets-2842.pdf | SOT-227-4, miniBLOC | 38.2mm | 9.6mm | 25.4mm | Lead Free | 4 | 16 Weeks | 30.000004g | 11mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | UPPER | UNSPECIFIED | 4 | 1 | Single | 450W | 1 | FET General Purpose Power | 16 ns | 48ns | 9 ns | 51 ns | 142A | 30V | SILICON | ISOLATED | SWITCHING | 100V | 450W Tc | 576A | 2500 mJ | N-Channel | 8600pF @ 25V | 11m Ω @ 71A, 10V | 4V @ 2.5mA | 142A Tc | 300nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| APT58M80J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt58m80j-datasheets-2845.pdf | 800V | 58A | SOT-227-4, miniBLOC | Lead Free | 4 | 16 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | EAR99 | AVALANCHE RATED, UL RECOGNIZED | No | UPPER | UNSPECIFIED | 4 | 960W | 1 | 100 ns | 145ns | 125 ns | 435 ns | 60A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 960W Tc | 325A | 3725 mJ | N-Channel | 17550pF @ 25V | 110m Ω @ 43A, 10V | 5V @ 5mA | 570nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF840STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-irf840spbf-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 14 ns | 23ns | 20 ns | 49 ns | 8A | 20V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1300pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 63nC @ 10V | 850 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| APT5010B2FLLG | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt5010b2fllg-datasheets-2852.pdf | 500V | 46A | TO-247-3 Variant | Lead Free | 3 | 26 Weeks | 3 | IN PRODUCTION (Last Updated: 4 weeks ago) | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 520W | 1 | 11 ns | 15ns | 3 ns | 25 ns | 46A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 520W Tc | N-Channel | 4360pF @ 25V | 100m Ω @ 23A, 10V | 5V @ 2.5mA | 46A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STW45N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw45n60dm6-datasheets-2855.pdf | TO-247-3 | 16 Weeks | ACTIVE (Last Updated: 7 months ago) | NOT SPECIFIED | STW45N | NOT SPECIFIED | 600V | 210W Tc | N-Channel | 1920pF @ 100V | 99m Ω @ 15A, 10V | 4.75V @ 250μA | 30A Tc | 44nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW61N65EF-GE3 | Vishay Siliconix | $11.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw61n65efge3-datasheets-2858.pdf | TO-247-3 | 17 Weeks | 650V | 520W Tc | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSD316SNH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsd316snh6327xtsa1-datasheets-2860.pdf | 6-VSSOP, SC-88, SOT-363 | Lead Free | 10 Weeks | 6 | yes | EAR99 | Tin | e3 | Halogen Free | NOT SPECIFIED | NOT SPECIFIED | 2.3ns | 1.4A | 20V | 30V | 500mW Ta | N-Channel | 94pF @ 15V | 160m Ω @ 1.4A, 10V | 2V @ 3.7μA | 1.4A Ta | 0.6nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT39F60J | Microsemi Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 8™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/microsemicorporation-apt39f60j-datasheets-2869.pdf | SOT-227-4, miniBLOC | 4 | 23 Weeks | 4 | IN PRODUCTION (Last Updated: 3 weeks ago) | yes | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNISED | No | UPPER | UNSPECIFIED | 4 | 480W | 1 | 65 ns | 75ns | 60 ns | 190 ns | 42A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 480W Tc | N-Channel | 11300pF @ 25V | 110m Ω @ 28A, 10V | 5V @ 2.5mA | 42A Tc | 280nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SSM3J118TU(TE85L) | Toshiba Semiconductor and Storage | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSII | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 3-SMD, Flat Lead | 52 Weeks | 3 | unknown | Single | 800mW | 1.4A | 30V | 500mW Ta | -30V | P-Channel | 137pF @ 15V | 240m Ω @ 650mA, 10V | 1.4A Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSS21319C | Alpha & Omega Semiconductor Inc. | $0.48 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 18 Weeks | 30V | 1.3W Ta | P-Channel | 320pF @ 15V | 100m Ω @ 2.8A, 10V | 2.2V @ 250μA | 2.8A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH40N85X | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/ixys-ixfh40n85x-datasheets-2899.pdf | TO-247-3 | 19 Weeks | yes | unknown | 40A | 850V | 860W Tc | N-Channel | 3700pF @ 25V | 145m Ω @ 500mA, 10V | 5.5V @ 4mA | 40A Tc | 98nC @ 10V | 10V | ±30V |
