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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD65R1K4C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipd65r1k4c6atma1-datasheets-0701.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | PG-TO252-3 | 650V | 28W Tc | N-Channel | 225pF @ 100V | 1.4Ohm @ 1A, 10V | 3.5V @ 100μA | 3.2A Tc | 10.5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUC24N10S5L300ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iauc24n10s5l300atma1-datasheets-0707.pdf | 8-PowerTDFN | 16 Weeks | 100V | 38W Tc | N-Channel | 670pF @ 50V | 30m Ω @ 12A, 10V | 2.2V @ 12μA | 24A Tc | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT64M2LPSW-13 | Diodes Incorporated | $0.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt64m2lpsw13-datasheets-0708.pdf | 8-PowerTDFN | 22 Weeks | 60V | 2.8W Ta 83.3W Tc | N-Channel | 2799pF @ 30V | 4.4m Ω @ 50A, 10V | 2.5V @ 250μA | 20.7A Ta 100A Tc | 46.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C670NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c670nlwfaft1g-datasheets-4576.pdf | 8-PowerTDFN, 5 Leads | 5 | 4 Weeks | ACTIVE (Last Updated: 18 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 61W Tc | 440A | 0.0088Ohm | 166 mJ | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 53μA | 17A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSO080P03NS3GXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bso080p03ns3gxuma1-datasheets-0631.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 8 | yes | EAR99 | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.6W | 1 | Not Qualified | 47ns | 14.8A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 1.6W Ta | P-Channel | 6750pF @ 15V | 8m Ω @ 14.8A, 10V | 3.1V @ 150μA | 12A Ta | 81nC @ 10V | 6V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| TPC8065-H,LQ(S | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 8-SOP | 1.35nF | 2.1ns | 2.4 ns | 13A | 20V | 30V | 1W Ta | N-Channel | 1350pF @ 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200μA | 13A Ta | 20nC @ 10V | 11.6 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN4206GTC | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn4206gvta-datasheets-2189.pdf | 60V | 1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 1Ohm | 4 | no | EAR99 | FAST SWITCHING | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | 40 | 2W | 1 | 8 ns | 12ns | 15 ns | 12 ns | 1A | 20V | SILICON | SINGLE | DRAIN | SWITCHING | 2W Ta | 1A | 8A | 60V | N-Channel | 100pF @ 25V | 1 Ω @ 1.5A, 10V | 3V @ 1mA | 1A Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||
| IRFR5505TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfr5505trpbf-datasheets-2068.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 57W Tc | TO-252AA | 18A | 64A | 0.11Ohm | 150 mJ | P-Channel | 650pF @ 25V | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 18A Tc | 32nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMT15H053SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt15h053sss13-datasheets-0593.pdf | 8-SOIC (0.154, 3.90mm Width) | 20 Weeks | 150V | 1.3W Ta | N-Channel | 814pF @ 75V | 53m Ω @ 4.1A, 10V | 4V @ 250μA | 5.2A Ta 15A Tc | 11.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSD050N10TL | ROHM Semiconductor | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-2sa1774ebtlr-datasheets-4143.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.5mm | 2.3mm | 5.5mm | Lead Free | 2 | 10 Weeks | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn98Cu2) | GULL WING | 260 | 3 | Single | 10 | 15W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 15 ns | 45 ns | 5A | 20V | SILICON | SWITCHING | 15W Tc | 5A | 20A | 0.205Ohm | 100V | N-Channel | 530pF @ 25V | 190m Ω @ 5A, 10V | 2.5V @ 1mA | 5A Ta | 14nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||
| DMTH10H015LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmth10h015lps13-datasheets-0601.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 44A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 1.3W Ta 46W Tc | 7.3A | 120A | N-Channel | 1871pF @ 50V | 16m Ω @ 20A, 10V | 3V @ 250μA | 7.3A Ta 44A Tc | 33.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NVMFS5C442NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c442nlaft1g-datasheets-0686.pdf | 8-PowerTDFN, 5 Leads | 17 Weeks | ACTIVE (Last Updated: 9 hours ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.7W Ta 83W Tc | N-Channel | 3100pF @ 25V | 2.5m Ω @ 50A, 10V | 2V @ 250μA | 29A Ta 130A Tc | 50nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C456NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c456nlwfaft1g-datasheets-0606.pdf | 8-PowerTDFN, 5 Leads | 7 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 40V | 55W Tc | N-Channel | 1600pF @ 25V | 3.7m Ω @ 20A, 10V | 2V @ 250μA | 87A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH6R30ANL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 8-PowerVDFN | 12 Weeks | 100V | 2.5W Ta 54W Tc | N-Channel | 4300pF @ 50V | 6.3m Ω @ 22.5A, 10V | 2.5V @ 500μA | 66A Ta 45A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT67M8LCG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt67m8lcg13-datasheets-0502.pdf | 8-PowerVDFN | 28 Weeks | 60V | 900mW Ta | N-Channel | 2130pF @ 30V | 5.7m Ω @ 20A, 10V | 2.5V @ 250μA | 16A Ta 64.6A Tc | 37.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU4300N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcu4300n80z-datasheets-0615.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 17 Weeks | 343.08mg | 4.3Ohm | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 10 ns | 6.5ns | 16 ns | 21 ns | 1.6A | 30V | 27.8W Tc | 800V | N-Channel | 355pF @ 100V | 4.3 Ω @ 800mA, 10V | 4.5V @ 160μA | 1.6A Tc | 8.8nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| AOTF4185 | Alpha & Omega Semiconductor Inc. | $3.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | No | 33W | 1 | Other Transistors | 34A | 20V | Single | 40V | 33W Tc | P-Channel | 2550pF @ 20V | 16m Ω @ 20A, 10V | 2.5V @ 250μA | 34A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H015LCG-7 | Diodes Incorporated | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmt10h015lcg13-datasheets-0572.pdf | 8-VDFN Exposed Pad | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 34A | 100V | 1W Ta | N-Channel | 1871pF @ 50V | 15m Ω @ 20A, 10V | 3.5V @ 250μA | 9.4A Ta 34A Tc | 33.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH3004LK3Q-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmth3004lk3q13-datasheets-0640.pdf | TO-252-5, DPak (4 Leads + Tab), TO-252AD | 2 | 23 Weeks | EAR99 | HIGH RELIABILITY | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 107W Ta | 21A | 105A | 0.004Ohm | 287 mJ | N-Channel | 2370pF @ 15V | 4m Ω @ 20A, 10V | 3V @ 250μA | 21A Ta 75A Tc | 44nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
| IPLK80R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | 8-PowerTDFN | 18 Weeks | 800V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPLK70R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/infineontechnologies-iplk70r750p7atma1-datasheets-0641.pdf | 8-PowerTDFN | 18 Weeks | 700V | N-Channel | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H015LCG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~155°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/diodesincorporated-dmt10h015lcg13-datasheets-0572.pdf | 8-VDFN Exposed Pad | 23 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 34A | 100V | 1W Ta | N-Channel | 1871pF @ 50V | 15m Ω @ 20A, 10V | 3.5V @ 250μA | 9.4A Ta 34A Tc | 33.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU7546PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfr7546trpbf-datasheets-1026.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 56A | 60V | 99W Tc | N-Channel | 3020pF @ 25V | 7.9m Ω @ 43A, 10V | 3.7V @ 100μA | 56A Tc | 87nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ446EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj446ept1ge3-datasheets-0580.pdf | PowerPAK® SO-8 | 12 Weeks | PowerPAK® SO-8 | 40V | 46W Tc | N-Channel | 4220pF @ 20V | 5mOhm @ 14A, 10V | 2.5V @ 250μA | 60A Tc | 65nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8558S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdms8558s-datasheets-9756.pdf | 8-PowerTDFN | 5.1mm | 1.05mm | 5.85mm | Lead Free | 5 | 90mg | 8 | LIFETIME (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 2.5W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 8ns | 7 ns | 51 ns | 38A | 12V | SILICON | DRAIN | SWITCHING | 2.5W Ta 78W Tc | MO-240AA | 90A | 25V | N-Channel | 5118pF @ 13V | 1.5m Ω @ 33A, 10V | 2.2V @ 1mA | 33A Ta 90A Tc | 81nC @ 10V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||
| AOB409L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/alphaomegasemiconductor-aob409l-datasheets-4394.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | 83.3W | 1 | 31.5A | 20V | 60V | 2.1W Ta 83.3W Tc | P-Channel | 2953pF @ 30V | 38m Ω @ 20A, 10V | 2.4V @ 250μA | 5A Ta 31.5A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R1K5CEXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-ipa60r1k5cexksa1-datasheets-0517.pdf | TO-220-3 Full Pack | Lead Free | 3 | 18 Weeks | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 5A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 8A | 26 mJ | N-Channel | 200pF @ 100V | 1.5 Ω @ 1.1A, 10V | 3.5V @ 90μA | 5A Tc | 9.4nC @ 10V | Super Junction | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AO5404E | Alpha & Omega Semiconductor Inc. | $0.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-ao5404e-datasheets-4377.pdf | SC-89, SOT-490 | 500mA | 20V | 280mW Ta | N-Channel | 45pF @ 10V | 550m Ω @ 500mA, 4.5V | 1V @ 250μA | 500mA Ta | 1nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSO200P03SHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bso200p03shxuma1-datasheets-0522.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | no | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-G8 | 11ns | 7.4A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 1.56W Ta | 36.4A | 0.02Ohm | 98 mJ | P-Channel | 2330pF @ 25V | 20m Ω @ 9.1A, 10V | 1.5V @ 100μA | 7.4A Ta | 54nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| AON6234 | Alpha & Omega Semiconductor Inc. | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 85A | 40V | 2.3W Ta 83W Tc | N-Channel | 2805pF @ 20V | 3.4m Ω @ 20A, 10V | 2.4V @ 250μA | 20A Ta 85A Tc | 41nC @ 10V | 4.5V 10V | ±20V |
