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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQP27N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqp27n25-datasheets-0343.pdf | 250V | 25.5A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 180W | 1 | FET General Purpose Power | 32 ns | 270ns | 120 ns | 80 ns | 25.5A | 30V | SILICON | SWITCHING | 180W Tc | TO-220AB | 600 mJ | 250V | N-Channel | 2450pF @ 25V | 5 V | 110m Ω @ 12.75A, 10V | 5V @ 250μA | 25.5A Tc | 65nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STL8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8n80k5-datasheets-0356.pdf | 8-PowerVDFN | 5.4mm | 950μm | 6.35mm | Lead Free | 5 | 17 Weeks | 8 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | FLAT | 260 | STL8 | 8 | Single | 42W | 1 | FET General Purpose Powers | R-PDSO-F5 | 12 ns | 14ns | 20 ns | 32 ns | 4.5A | 30V | SILICON | DRAIN | SWITCHING | 800V | 42W Tc | 0.95Ohm | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 4.5A Tc | 16.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| CDM22011-600LRFP SL | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cdm22011600lrfpsl-datasheets-0369.pdf | TO-220-3 Full Pack | 3 | 15 Weeks | ULTRA LOW RESISTANCE | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 25W Tc | TO-220AB | 11A | 0.36Ohm | N-Channel | 763pF @ 100V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 23.05nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOTF266L | Alpha & Omega Semiconductor Inc. | $1.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | TO-220-3 Full Pack | 18 Weeks | 3 | 45.5W | 1 | FET General Purpose Power | 78A | 20V | Single | 60V | 2.1W Ta 45.5W Tc | N-Channel | 5650pF @ 30V | 3.5m Ω @ 20A, 10V | 3.2V @ 250μA | 18A Ta 78A Tc | 90nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB10N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi10n65k3-datasheets-5768.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | EAR99 | No | STB10N6 | 1 | Single | 14.5 ns | 14ns | 35 ns | 44 ns | 10A | 30V | 150W Tc | 650V | N-Channel | 1180pF @ 25V | 1 Ω @ 3.6A, 10V | 4.5V @ 100μA | 10A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF830ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf830aspbf-datasheets-3844.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 1.4Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 620pF | 10 ns | 21ns | 15 ns | 21 ns | 5A | 30V | 500V | 74W Tc | 1.4Ohm | 500V | N-Channel | 620pF @ 25V | 1.4Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.4 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STB120N4LF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std120n4lf6-datasheets-7180.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 20 Weeks | No SVHC | 4MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB120N | 4 | Single | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 95ns | 45 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 1V | 110W Tc | 40V | N-Channel | 4300pF @ 25V | 4m Ω @ 40A, 10V | 3V @ 250μA | 80A Tc | 80nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STH6N95K5-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sth6n95k52-datasheets-0195.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STH6N | NOT SPECIFIED | 1 | R-PSSO-G2 | 6A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 950V | 950V | 110W Tc | 6A | 24A | 90 mJ | N-Channel | 450pF @ 100V | 1.25 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB95N4F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-std95n4f3-datasheets-5947.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 5MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STB95N | Single | 110W | 1 | FET General Purpose Power | 15 ns | 50ns | 15 ns | 40 ns | 80A | 20V | 110W Tc | 40V | N-Channel | 2200pF @ 25V | 5.8m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 54nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK0301DPB-02#J0 | Renesas Electronics America | $1.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-rjk0301dpb02j0-datasheets-0243.pdf | SC-100, SOT-669 | Lead Free | 16 Weeks | 5 | yes | Gold | NOT SPECIFIED | 5 | NOT SPECIFIED | 11.5 ns | 4.5ns | 6 ns | 58 ns | 60A | 16V | 30V | 65W Tc | N-Channel | 5000pF @ 10V | 2.8m Ω @ 30A, 10V | 60A Ta | 32nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM3N90CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n90chc5g-datasheets-7803.pdf | TO-220-3 | 24 Weeks | TO-220 | 900V | 94W Tc | N-Channel | 748pF @ 25V | 5.1Ohm @ 1.25A, 10V | 4V @ 250μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STLD125N4F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stld125n4f6ag-datasheets-9846.pdf | 8-PowerWDFN | 5 | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | STLD125 | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 130W Tc | 101A | 480A | 0.004Ohm | 150 mJ | N-Channel | 5600pF @ 10V | 3m Ω @ 75A, 10V | 4V @ 1mA | 120A Tc | 91nC @ 10V | 6.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7145DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7145dpt1ge3-datasheets-0063.pdf | PowerPAK® SO-8 | 4.9mm | 1.17mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.6mOhm | 8 | yes | EAR99 | Tin | No | S17-0173-Single | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | Other Transistors | 150°C | R-XDSO-C5 | 27 ns | 110ns | 43 ns | 130 ns | -60A | 20V | SILICON | DRAIN | SWITCHING | 30V | -2.3V | 6.25W Ta 104W Tc | 36.5A | -30V | P-Channel | 15660pF @ 15V | -2.3 V | 2.6m Ω @ 25A, 10V | 2.3V @ 250μA | 60A Tc | 413nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF730ASTRLPBF | Vishay Siliconix | $2.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf730aspbf-datasheets-5061.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | 1 | Single | 74W | 1 | D2PAK | 600pF | 10 ns | 22ns | 16 ns | 20 ns | 5.5A | 30V | 400V | 74W Tc | 1Ohm | 400V | N-Channel | 600pF @ 25V | 1Ohm @ 3.3A, 10V | 4.5V @ 250μA | 5.5A Tc | 22nC @ 10V | 1 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF740STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 550mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RSJ301N10FRATL | ROHM Semiconductor | $2.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 50W Ta | 30A | 60A | 0.05Ohm | N-Channel | 2100pF @ 25V | 46m Ω @ 15A, 10V | 2.5V @ 1mA | 30A Ta | 60nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB2552 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp2552-datasheets-3892.pdf | 150V | 37A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 4.535924g | No SVHC | 36MOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | Tin | No | 5A | e3 | 150V | GULL WING | 260 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 29ns | 29 ns | 36 ns | 37A | 20V | SILICON | DRAIN | SWITCHING | 4V | 150W Tc | 150V | N-Channel | 2800pF @ 25V | 36m Ω @ 16A, 10V | 4V @ 250μA | 5A Ta 37A Tc | 51nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| RCJ200N20TL | ROHM Semiconductor | $6.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | SC | Lead Free | 2 | 13 Weeks | 83 | EAR99 | not_compliant | 1.56W | SINGLE | GULL WING | NOT SPECIFIED | 150°C | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSSO-G2 | 1.9nF | 20A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 70A | 140A | 0.0427Ohm | 396 mJ | 130 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF730STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf730spbf-datasheets-3742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 12 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 3.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 15ns | 14 ns | 38 ns | 5.5A | 20V | SILICON | DRAIN | SWITCHING | 3.1W Ta 74W Tc | 22A | 1Ohm | 290 mJ | 400V | N-Channel | 700pF @ 25V | 1 Ω @ 3.3A, 10V | 4V @ 250μA | 5.5A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STL18N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl18n65m2-datasheets-0000.pdf | 8-PowerVDFN | 6.35mm | 950μm | 5.4mm | 26 Weeks | 8 | EAR99 | NOT SPECIFIED | STL18 | Single | NOT SPECIFIED | FET General Purpose Power | 11 ns | 46 ns | 8A | 25V | 650V | 57W Tc | 8A | N-Channel | 764pF @ 100V | 365m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 21.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7E2R3-40E,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk7e2r340e127-datasheets-0039.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | NO | SINGLE | 3 | 293W | 1 | 29 ns | 36ns | 46 ns | 79 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 293W Tc | 622 mJ | N-Channel | 8500pF @ 25V | 2.3m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 109.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF8N80CYDTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp8n80c-datasheets-3481.pdf | 800V | 8A | TO-220-3 Full Pack, Formed Leads | Lead Free | 3 | 4 Weeks | 2.565g | 1.55Ohm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 59W | 1 | FET General Purpose Power | Not Qualified | 40 ns | 110ns | 70 ns | 65 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 59W Tc | TO-220AB | 8A | 850 mJ | 800V | N-Channel | 2050pF @ 25V | 1.55 Ω @ 4A, 10V | 5V @ 250μA | 8A Tc | 45nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SQM40022EM_GE3 | Vishay Siliconix | $1.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm40022emge3-datasheets-0061.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | TO-263-7 | 40V | 150W Tc | N-Channel | 9200pF @ 25V | 1.63mOhm @ 35A, 10V | 3.5V @ 250μA | 150A Tc | 160nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C604NLAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c604nlwfaft1g-datasheets-2820.pdf | 8-PowerTDFN, 5 Leads | 1.1mm | 12 Weeks | ACTIVE (Last Updated: 14 hours ago) | yes | not_compliant | e3 | Tin (Sn) | 1 | 3.9W | 175°C | 21.8 ns | 57.8 ns | 40A | 20V | 200W Tc | 60V | N-Channel | 8900pF @ 25V | 1.2m Ω @ 50A, 10V | 2V @ 250μA | 287A Tc | 52nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HUF76439S3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-huf76439s3st-datasheets-0091.pdf | 60V | 71A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 1.31247g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 180W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 300ns | 105 ns | 29 ns | 75A | 16V | SILICON | DRAIN | SWITCHING | 180W Tc | 60V | N-Channel | 2745pF @ 25V | 12m Ω @ 75A, 10V | 3V @ 250μA | 75A Tc | 84nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQM50P03-07_GE3 | Vishay Siliconix | $2.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm50p0307ge3-datasheets-9824.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 30V | 150W Tc | P-Channel | 5380pF @ 25V | 7mOhm @ 30A, 10V | 2.5V @ 250μA | 50A Tc | 155nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQA13N50CF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa13n50cf-datasheets-9918.pdf | TO-3P-3, SC-65-3 | 15.8mm | 20.1mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | 480MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 218W | 1 | FET General Purpose Power | Not Qualified | 25 ns | 100ns | 100 ns | 130 ns | 15A | 30V | SILICON | SWITCHING | 218W Tc | 60A | 860 mJ | 500V | N-Channel | 2055pF @ 25V | 480m Ω @ 7.5A, 10V | 4V @ 250μA | 15A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IRF634STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf634strrpbf-datasheets-9861.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.02mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 770pF | 9.6 ns | 21ns | 19 ns | 42 ns | 8.1A | 20V | 250V | 3.1W Ta 74W Tc | 450mOhm | N-Channel | 770pF @ 25V | 450mOhm @ 5.1A, 10V | 4V @ 250μA | 8.1A Tc | 41nC @ 10V | 450 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16570Q5B | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 12 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | CSD16570 | Single | NOT SPECIFIED | 1 | 5 ns | 43ns | 72 ns | 156 ns | 100A | 20V | SILICON | DRAIN | 25V | 25V | 3.2W Ta 195W Tc | 59A | 400A | 1290 pF | N-Channel | 14000pF @ 12V | 0.59m Ω @ 50A, 10V | 1.9V @ 250μA | 100A Ta | 250nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SQM47N10-24L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm47n1024lge3-datasheets-9876.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | GULL WING | 260 | 4 | 1 | Single | 40 | 136W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 6ns | 6 ns | 32 ns | 47A | 20V | SILICON | DRAIN | 100V | 2V | 136W Tc | 0.024Ohm | 92 mJ | N-Channel | 3620pF @ 25V | 2 V | 24m Ω @ 40A, 10V | 2.5V @ 250μA | 47A Tc | 72nC @ 10V | 4.5V 10V | ±20V |
