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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| R6011KNJTL | ROHM Semiconductor | $1.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 20 Weeks | No SVHC | 3 | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 5V | 124W Tc | 210 mJ | N-Channel | 740pF @ 25V | 390m Ω @ 3.8A, 10V | 5V @ 1mA | 11A Tc | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4368DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4368dyt1e3-datasheets-9508.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 14 Weeks | 186.993455mg | 3.2mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 25 ns | 20ns | 20 ns | 172 ns | 17A | 12V | SILICON | SWITCHING | 1.6W Ta | 30V | N-Channel | 8340pF @ 15V | 3.2m Ω @ 25A, 10V | 1.8V @ 250μA | 17A Ta | 80nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||
| IRFR430ATRPBF | Vishay Siliconix | $1.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 11 Weeks | 1.437803g | 1.7Ohm | 3 | No | 1 | Single | 110W | 1 | 150°C | D-Pak | 490pF | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | 500V | 4.5V | 110W Tc | 1.7Ohm | 500V | N-Channel | 490pF @ 25V | 1.7Ohm @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 1.7 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK9615-100A,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk9615100a118-datasheets-9399.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | 3 | EAR99 | Tin | No | e3 | YES | GULL WING | 260 | 3 | Single | 40 | 230W | 1 | R-PSSO-G2 | 45 ns | 130ns | 130 ns | 400 ns | 75A | 10V | 100V | SILICON | DRAIN | SWITCHING | 230W Tc | 100V | N-Channel | 8600pF @ 25V | 14.4m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 5V 10V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQP50N06-09L_GE3 | Vishay Siliconix | $1.83 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqp50n0609lge3-datasheets-9541.pdf | TO-220-3 | 3 | 12 Weeks | EAR99 | unknown | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 136W Tc | TO-220AB | 50A | 200A | 0.009Ohm | 115 mJ | N-Channel | 3065pF @ 25V | 9m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CDM22010-650 SL | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cdm22010650sl-datasheets-9543.pdf | TO-220-3 | 3 | 18 Weeks | 8541.29.00.95 | NO | SINGLE | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 2W Ta 156W Tc | TO-220AB | 10A | 1Ohm | N-Channel | 1168pF @ 25V | 1 Ω @ 5A, 10V | 4V @ 250μA | 10A Ta | 20nC @ 10V | 10V | 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R5009FNJTL | ROHM Semiconductor | $2.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | 83 | not_compliant | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 50W Tc | 9A | 36A | 0.84Ohm | 5.4 mJ | N-Channel | 630pF @ 25V | 840m Ω @ 4.5A, 10V | 4V @ 1mA | 9A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL260N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H6 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl260n3llh6-datasheets-9484.pdf | 8-PowerVDFN | Lead Free | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL260 | NOT SPECIFIED | FET General Purpose Power | 260A | Single | 30V | 166W Tc | N-Channel | 6375pF @ 25V | 1.3m Ω @ 22.5A, 10V | 1V @ 250μA (Min) | 260A Tc | 61.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH175N4F6-6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth175n4f66ag-datasheets-9287.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STH175 | NOT SPECIFIED | FET General Purpose Power | 120A | Single | 40V | 150W Tc | N-Channel | 7735pF @ 20V | 2.4m Ω @ 60A, 10V | 4.5V @ 250μA | 120A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC86320 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdmc86320-datasheets-9076.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 10 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 22 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 40W | 1 | FET General Purpose Power | S-PDSO-N5 | 15 ns | 8ns | 5 ns | 20 ns | 22A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 40W Tc | 50A | 60 mJ | 80V | N-Channel | 2640pF @ 40V | 11.7m Ω @ 10.7A, 10V | 4.5V @ 250μA | 10.7A Ta 22A Tc | 41nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TSM3N80CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm3n80chc5g-datasheets-7694.pdf | TO-220-3 | 24 Weeks | TO-220 | 800V | 94W Tc | N-Channel | 696pF @ 25V | 4.2Ohm @ 1.5A, 10V | 4V @ 250μA | 3A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TA | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 26 Weeks | 8 | STL8 | 1 | 25V | 650V | N-Channel | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS4C01NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-nvmfs4c01nt1g-datasheets-9181.pdf | 8-PowerTDFN | Lead Free | 5 | 11 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | 1 | FET General Purpose Power | R-PDSO-F5 | 29 ns | 68ns | 36 ns | 53 ns | 319A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 30V | 30V | 3.84W Ta 161W Tc | 900A | 0.00095Ohm | N-Channel | 10144pF @ 15V | 0.9m Ω @ 30A, 10V | 2.2V @ 250μA | 49A Ta 319A Tc | 139nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF820STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf820spbf-datasheets-4619.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 12 Weeks | 1.437803g | 3Ohm | No | 1 | Single | 3.1W | 1 | D2PAK | 360pF | 8 ns | 8.6ns | 16 ns | 33 ns | 2.5A | 20V | 500V | 3.1W Ta 50W Tc | 3Ohm | 500V | N-Channel | 360pF @ 25V | 3Ohm @ 1.5A, 10V | 4V @ 250μA | 2.5A Tc | 24nC @ 10V | 3 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FDB8445 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdb8445-datasheets-9240.pdf | 40V | 70A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.97mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 9MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 92W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 19ns | 16 ns | 36 ns | 70A | 20V | 40V | SILICON | DRAIN | SWITCHING | 2.5V | 92W Tc | 40V | N-Channel | 3805pF @ 25V | 2.5 V | 9m Ω @ 70A, 10V | 4V @ 250μA | 70A Tc | 62nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| STL10N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | 26 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | NOT SPECIFIED | STL10 | 1 | NOT SPECIFIED | 25V | 650V | 48W Tc | N-Channel | 315pF @ 100V | 1 Ω @ 2.5A, 10V | 4V @ 250μA | 4.5A Tc | 10.3nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS6H801NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/onsemiconductor-ntmfs6h801nt1g-datasheets-9291.pdf | 8-PowerTDFN, 5 Leads | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.8W Ta 166W Tc | N-Channel | 4120pF @ 40V | 2.8m Ω @ 50A, 10V | 4V @ 250μA | 23A Ta 157A Tc | 64nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK762R6-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk762r640e118-datasheets-9313.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 3 | 263W | 1 | R-PSSO-G2 | 29 ns | 36ns | 36 ns | 62 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 920A | 0.0026Ohm | 574 mJ | 40V | N-Channel | 7130pF @ 25V | 2.6m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 91nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BUK7J1R4-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | /files/nexperiausainc-buk7j1r440hx-datasheets-9301.pdf | SOT-1023, 4-LFPAK | 16 Weeks | compliant | 4 | 40V | 395W Ta | N-Channel | 8155pF @ 25V | 1.4m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 126nC @ 10V | 10V | +20V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD25NF10LA | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std25nf10la-datasheets-8309.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.8mm | Lead Free | 2 | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | SINGLE | GULL WING | STD25N | 3 | 100W | 1 | FET General Purpose Powers | R-PSSO-G2 | 20 ns | 40ns | 20 ns | 58 ns | 25A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 2.5V | 100W Tc | 0.04Ohm | 450 mJ | N-Channel | 1710pF @ 25V | 35m Ω @ 12.5A, 10V | 2.5V @ 250μA | 25A Tc | 52nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||
| STD15N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std15n60m2ep-datasheets-9360.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 11 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | STD15 | 11A | 600V | 110W Tc | N-Channel | 590pF @ 100V | 378m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS6673BZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms6673bz-datasheets-9370.pdf | 8-PowerTDFN | 5 | 10 Weeks | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.5W Ta 73W Tc | MO-240AA | 15.2A | 0.0068Ohm | 1045 pF | P-Channel | 5915pF @ 15V | 6.8m Ω @ 15.2A, 10V | 3V @ 250μA | 15.2A Ta 28A Tc | 130nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK90S06N1L,LQ | Toshiba Semiconductor and Storage | $2.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3.949996g | 1 | Single | 90A | 10V | 60V | 157W Tc | N-Channel | 5400pF @ 10V | 3.3m Ω @ 45A, 10V | 2.5V @ 500μA | 90A Ta | 81nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N80CT | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf6n80c-datasheets-3653.pdf | TO-220-3 Full Pack | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 2 weeks ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 51W | 1 | FET General Purpose Power | 26 ns | 65ns | 44 ns | 47 ns | 5.5A | 30V | SILICON | ISOLATED | SWITCHING | 51W Tc | TO-220AB | 22A | 680 mJ | 800V | N-Channel | 1310pF @ 25V | 2.5 Ω @ 2.75A, 10V | 5V @ 250μA | 5.5A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF540STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 8.8 ns | 30ns | 20 ns | 19 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 270mOhm | 100V | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 12 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AOTS21319C | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-74, SOT-457 | 18 Weeks | 30V | 1.2W Ta | P-Channel | 320pF @ 15V | 100m Ω @ 2.7A, 10V | 2.2V @ 250μA | 2.7A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9409L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdb9409lf085-datasheets-8903.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 33 Weeks | 1.31247g | ACTIVE (Last Updated: 1 day ago) | Single | 40V | 94W Tj | N-Channel | 3360pF @ 20V | 2.9m Ω @ 80A, 10V | 3V @ 250μA | 90A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8010ET30 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerWDFN | Lead Free | 5 | 12 Weeks | 152.7mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | ULTRA LOW RESISTANCE | not_compliant | e3 | Tin (Sn) | DUAL | NO LEAD | Single | 1 | S-PDSO-N5 | 174A | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 65W Tc | MO-240BA | 30A | 0.0013Ohm | 250 pF | 153 mJ | N-Channel | 5860pF @ 15V | 75ns | 42ns | 1.3m Ω @ 30A, 10V | 2.5V @ 1mA | 30A Ta 174A Tc | 94nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4122DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4122dyt1ge3-datasheets-9040.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 4.5MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 3W | 1 | FET General Purpose Power | 42 ns | 34ns | 28 ns | 45 ns | 27.2A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5V | 3W Ta 6W Tc | 225 pF | 40V | N-Channel | 4200pF @ 20V | 4.5m Ω @ 15A, 10V | 2.5V @ 250μA | 27.2A Tc | 95nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| SIR402DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir402dpt1ge3-datasheets-9004.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 6mOhm | 8 | yes | EAR99 | No | DUAL | C BEND | 8 | 1 | Single | 4.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 20ns | 15 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 4.2W Ta 36W Tc | 20.7A | 70A | N-Channel | 1700pF @ 15V | 6m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 42nC @ 10V | 4.5V 10V | ±20V |
