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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| AONS66966 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductorinc-aons66966-datasheets-5852.pdf | 8-PowerVDFN | 18 Weeks | 100V | 6.2W Ta 215W Tc | N-Channel | 5325pF @ 50V | 3.6m Ω @ 20A, 10V | 3.6V @ 250μA | 31.3A Ta 100A Tc | 95nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9Z34STRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irf9z34strrpbf-datasheets-5811.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.437803g | 3 | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 4 | 1 | Single | 40 | 3.7W | 1 | R-PSSO-G2 | 18 ns | 120ns | 58 ns | 20 ns | -18A | 20V | SILICON | SWITCHING | 60V | 3.7W Ta 88W Tc | 72A | -60V | P-Channel | 1100pF @ 25V | 140m Ω @ 11A, 10V | 4V @ 250μA | 18A Tc | 34nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| HAT2279H-EL-E | Renesas Electronics America | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2279hele-datasheets-5837.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 25W | 1 | FET General Purpose Power | R-PSFM-G4 | 9.5 ns | 14.5ns | 9.5 ns | 56 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 25W Tc | N-Channel | 3520pF @ 10V | 12m Ω @ 15A, 10V | 30A Ta | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIE822DF-T1-GE3 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0034Ohm | 45 mJ | 20V | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FKV575 | Sanken | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2008 | https://pdf.utmel.com/r/datasheets/sanken-fkv575-datasheets-5937.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | yes | EAR99 | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | 75A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 50V | 50V | 40W Tc | TO-220AB | 200A | 0.01Ohm | 300 mJ | N-Channel | 3200pF @ 10V | 10m Ω @ 37A, 10V | 4.5V @ 250μA | 75A Ta | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD50N06-09L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50n0609le3-datasheets-5807.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.507mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 9.3mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 4 | 1 | Single | 100W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 10 ns | 15ns | 20 ns | 35 ns | 50A | 20V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta 136W Tc | TO-252AA | 60V | N-Channel | 2650pF @ 25V | 2 V | 9.3m Ω @ 20A, 10V | 3V @ 250μA | 50A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| FDBL86066-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdbl86066f085-datasheets-5950.pdf | 8-PowerSFN | 16 Weeks | ACTIVE (Last Updated: 6 days ago) | yes | 100V | 300W Ta | N-Channel | 3240pF @ 50V | 4.1m Ω @ 80A, 10V | 4V @ 250μA | 185A Tc | 69nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R6-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn1r630pl127-datasheets-5953.pdf | TO-220-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 20 Weeks | 453.59237mg | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 306W | 1 | 104 ns | 163ns | 87 ns | 174 ns | 100A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 306W Tc | TO-220AB | 30V | N-Channel | 12493pF @ 12V | 1.7m Ω @ 25A, 10V | 2.15V @ 1mA | 100A Tc | 212nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STL23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 8-PowerVDFN | Lead Free | NRND (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL23 | Single | NOT SPECIFIED | 3W | 6.6 ns | 19ns | 29 ns | 71 ns | 14A | 25V | 500V | 3W Ta 125W Tc | 550V | N-Channel | 1330pF @ 50V | 210m Ω @ 7A, 10V | 4V @ 250μA | 2.8A Ta 14A Tc | 45nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH4R008NH,L1Q | Toshiba Semiconductor and Storage | $2.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 86ns | 12 ns | 52 ns | 60A | 20V | 80V | 1.6W Ta 78W Tc | N-Channel | 5300pF @ 40V | 4m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 59nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR804DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sir804dpt1ge3-datasheets-5941.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 7.2mOhm | 8 | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 6.25W | 1 | R-XDSO-C5 | 11 ns | 9ns | 11 ns | 38 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 100V | 1.2V | 6.25W Ta 104W Tc | N-Channel | 2450pF @ 50V | 1.2 V | 7.2m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 76nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FCP165N60E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | /files/onsemiconductor-fcp165n60e-datasheets-5791.pdf | TO-220 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | 227W | NOT SPECIFIED | Single | NOT SPECIFIED | 2.434nF | 23A | 600V | 3.5V | 132mOhm | 165 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTD5803NT4G | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-ntd5803nt4g-datasheets-5815.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | yes | unknown | e3 | TIN | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 83W Tc | 76A | 228A | 0.0072Ohm | 240 mJ | N-Channel | 3.22pF @ 25V | 7.2m Ω @ 50A, 10V | 3.5V @ 250μA | 76A Tc | 51nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TK10A80W,S4X | Toshiba Semiconductor and Storage | $11.01 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Through Hole | 150°C | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | TO-220-3 Full Pack | 16 Weeks | TO-220SIS | 800V | 40W Tc | N-Channel | 1150pF @ 300V | 550mOhm @ 4.8A, 10V | 4V @ 450μA | 9.5A Ta | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2173H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2173hele-datasheets-5654.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 20 | 1 | FET General Purpose Power | R-PSSO-G4 | 20 ns | 15ns | 5.7 ns | 37 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 30W Tc | N-Channel | 4350pF @ 10V | 15m Ω @ 12.5A, 10V | 6V @ 20mA | 25A Ta | 61nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMS8320L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdms8320l-datasheets-5657.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 12 Weeks | 90mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 104W | 1 | FET General Purpose Power | R-PDSO-F5 | 17 ns | 19ns | 17 ns | 68 ns | 36A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 104W Tc | MO-240AA | 264 mJ | 40V | N-Channel | 11110pF @ 20V | 1.1m Ω @ 32A, 10V | 3V @ 250μA | 36A Ta 100A Tc | 170nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FQU7N20TU | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fqu7n20tu-datasheets-5665.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | yes | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 200V | 200V | 2.5W Ta 45W Tc | 5.3A | 21A | 0.69Ohm | 73 mJ | N-Channel | 400pF @ 25V | 690m Ω @ 2.65A, 10V | 5V @ 250μA | 5.3A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| TK10P60W,RVQ | Toshiba Semiconductor and Storage | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 3 | Single | 80W | DPAK | 700pF | 22ns | 5.5 ns | 75 ns | 9.7A | 30V | 600V | 80W Tc | 380mOhm | 600V | N-Channel | 700pF @ 300V | 430mOhm @ 4.9A, 10V | 3.7V @ 500μA | 9.7A Ta | 20nC @ 10V | Super Junction | 430 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ100EL-T1_GE3 | Vishay Siliconix | $1.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq100elt1ge3-datasheets-5671.pdf | 8-PowerTDFN | Lead Free | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 40V | 150W Tc | N-Channel | 14500pF @ 25V | 1.2m Ω @ 20A, 10V | 2.5V @ 250μA | 200A Tc | 220nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8051-H(T2L1,VM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2009 | /files/toshiba-tpca8051ht2l1vm-datasheets-6062.pdf | 8-PowerVDFN | 5 | 14 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2.8W | 1 | S-PDSO-F5 | 28A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 1.6W Ta 45W Tc | 255 mJ | N-Channel | 7540pF @ 10V | 9.4m Ω @ 14A, 10V | 2.3V @ 1mA | 28A Ta | 91nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SQM100P10-19L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100p1019lge3-datasheets-5622.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 100V | 100V | 375W Tc | 93A | 200A | 0.019Ohm | 245 mJ | P-Channel | 14100pF @ 25V | 19m Ω @ 30A, 10V | 2.5V @ 250μA | 93A Tc | 350nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM70N600CP ROG | Taiwan Semiconductor Corporation | $5.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 83W Tc | N-Channel | 743pF @ 100V | 600m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 12.6nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7852ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7852adpt1ge3-datasheets-9431.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 17mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 9ns | 9 ns | 26 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 80V | 2.5V | 5W Ta 62.5W Tc | 60A | 45 mJ | N-Channel | 1825pF @ 40V | 2.5 V | 17m Ω @ 10A, 10V | 4.5V @ 250μA | 30A Tc | 45nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||
| SQJQ100E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqjq100et1ge3-datasheets-5673.pdf | 8-PowerTDFN | 2.03mm | 14 Weeks | C14-0891-SINGLE | 1 | 150W | 175°C | PowerPAK® 8 x 8 | 22 ns | 52 ns | 200A | 20V | 40V | 150W Tc | 900μOhm | 40V | N-Channel | 14780pF @ 25V | 1.5mOhm @ 20A, 10V | 3.5V @ 250μA | 200A Tc | 165nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL110N10F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl110n10f7-datasheets-5752.pdf | 8-PowerVDFN | 5.4mm | 950μm | 6.35mm | Lead Free | 5 | 6mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | DUAL | FLAT | NOT SPECIFIED | STL110 | Single | NOT SPECIFIED | 5W | 1 | FET General Purpose Powers | R-PDSO-F5 | 25 ns | 36ns | 21 ns | 52 ns | 107A | 20V | SILICON | DRAIN | SWITCHING | 100V | 136W Tc | 75A | 490 mJ | N-Channel | 5117pF @ 50V | 6m Ω @ 10A, 10V | 4.5V @ 250μA | 107A Tc | 72nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7434DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si7434dpt1e3-datasheets-5766.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | 155MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 23ns | 23 ns | 47 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 1.9W Ta | 2.3A | 40A | N-Channel | 155m Ω @ 3.8A, 10V | 4V @ 250μA | 2.3A Ta | 50nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| TPH2R306NH,L1Q | Toshiba Semiconductor and Storage | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 9.9ns | 16 ns | 50 ns | 60A | 20V | 60V | 1.6W Ta 78W Tc | N-Channel | 6100pF @ 30V | 2.3m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 72nC @ 10V | 6.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86180 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdms86180-datasheets-5554.pdf | 8-PowerTDFN | 1.1mm | 20 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 138W | 150°C | 24 ns | 30 ns | 151A | 20V | 3.2V | 138W Tc | 100V | N-Channel | 6215pF @ 50V | 3.2m Ω @ 67A, 10V | 4V @ 370μA | 151A Tc | 54nC @ 6V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STH140N8F7-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VII | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-sth140n8f72-datasheets-5645.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.8mm | 15.8mm | Lead Free | 15 Weeks | 3.949996g | 3 | EAR99 | No | STH140 | 1 | Single | FET General Purpose Power | 26 ns | 51ns | 44 ns | 82 ns | 90A | 20V | 200W Tc | 80V | N-Channel | 6340pF @ 40V | 4m Ω @ 45A, 10V | 4.5V @ 250μA | 90A Tc | 96nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDP6670AL | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-fds2070n3-datasheets-4113.pdf | TO-220-3 | 3 | yes | LOGIC LEVEL COMPATIBLE | unknown | e3 | MATTE TIN | NO | SINGLE | NOT APPLICABLE | 3 | NOT APPLICABLE | 1 | COMMERCIAL | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 68W Tc | TO-220AB | 80A | 240A | 0.0065Ohm | 114 mJ | N-Channel | 2.44pF @ 15V | 6.5m Ω @ 40A, 10V | 3V @ 250μA | 80A Ta | 33nC @ 5V | 4.5V 10V | ±20V |
