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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn Off Time-Max (toff) | Turn On Time-Max (ton) | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDMS8050 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms8050-datasheets-6216.pdf | 8-PowerTDFN | Lead Free | 5 | 56.5mg | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | DUAL | NO LEAD | 260 | Single | 30 | 1 | FET General Purpose Power | R-PDSO-N5 | SILICON | DRAIN | SWITCHING | 30V | 30V | 156W Tc | MO-240AA | 55A | 400A | 0.00065Ohm | 1536 mJ | N-Channel | 22610pF @ 15V | 0.65m Ω @ 55A, 10V | 3V @ 750μA | 55A Tc | 285nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STB140NF75T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp140nf75-datasheets-0478.pdf | 75V | 120A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 7.5mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 245 | STB140N | 3 | Single | 30 | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 140ns | 90 ns | 130 ns | 120A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 480A | 750 mJ | 75V | N-Channel | 5000pF @ 25V | 4 V | 7.5m Ω @ 70A, 10V | 4V @ 250μA | 120A Tc | 218nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| TPH4R50ANH,L1Q | Toshiba Semiconductor and Storage | $2.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | Single | 9.6ns | 13 ns | 52 ns | 60A | 20V | 100V | 1.6W Ta 78W Tc | N-Channel | 5200pF @ 50V | 4.5m Ω @ 30A, 10V | 4V @ 1mA | 60A Tc | 58nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPWR8004PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 1 | 26 ns | 13ns | 14 ns | 63 ns | 150A | 20V | 40V | 1W Ta 170W Tc | N-Channel | 9600pF @ 20V | 0.8m Ω @ 50A, 10V | 2.4V @ 1mA | 150A Tc | 103nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS7650DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdms7650dc-datasheets-6262.pdf&product=onsemiconductor-fdms7650dc-6839569 | 8-PowerTDFN | 5mm | 1.05mm | 6mm | 5 | 8 Weeks | 90mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | FLAT | Single | 3.3W | 1 | FET General Purpose Power | R-PDSO-F5 | 29 ns | 28ns | 20 ns | 81 ns | 47A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 1.9V | 3.3W Ta 125W Tc | MO-240AA | 200A | 0.00099Ohm | 30V | N-Channel | 14765pF @ 15V | 0.99m Ω @ 36A, 10V | 2.7V @ 250μA | 47A Ta 100A Tc | 206nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SI7852DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7852dpt1e3-datasheets-0287.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 2.32nF | 17 ns | 11ns | 31 ns | 40 ns | 7.6A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 50A | 80V | N-Channel | 16.5m Ω @ 10A, 10V | 2V @ 250μA (Min) | 7.6A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI7846DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7846dpt1e3-datasheets-4892.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | R-XDSO-C5 | 12 ns | 7ns | 10 ns | 22 ns | 4A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 4A | 50A | 0.05Ohm | 150V | N-Channel | 50m Ω @ 5A, 10V | 4.5V @ 250μA | 4A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI7434DP-T1-GE3 | Vishay Siliconix | $2.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7434dpt1e3-datasheets-5766.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.9W | 1 | FET General Purpose Power | R-XDSO-C5 | 16 ns | 23ns | 23 ns | 47 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1.9W Ta | 2.3A | 40A | 250V | N-Channel | 155m Ω @ 3.8A, 10V | 4V @ 250μA | 2.3A Ta | 50nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| R6012JNJGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6012jnjgtl-datasheets-6110.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 160W Tc | 12A | 36A | 0.39Ohm | 327 mJ | N-Channel | 900pF @ 100V | 390m Ω @ 6A, 15V | 7V @ 2.5mA | 12A Tc | 28nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R7-60BS,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r760bs118-datasheets-6159.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 306W Tc | 120A | 1076A | 0.002Ohm | 913 mJ | N-Channel | 9997pF @ 30V | 2m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 137nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPWR8503NL,L1Q | Toshiba Semiconductor and Storage | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | 8-PowerVDFN | 16 Weeks | 8 | 150A | 30V | 800mW Ta 142W Tc | N-Channel | 6900pF @ 15V | 0.85m Ω @ 50A, 10V | 2.3V @ 1mA | 150A Tc | 74nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ240N60E-T1-GE3 | Vishay Siliconix | $2.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihj240n60et1ge3-datasheets-5900.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 600V | 89W Tc | N-Channel | 783pF @ 100V | 240mOhm @ 5.5A, 10V | 5V @ 250μA | 12A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRRP | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | 1 | Single | D2PAK | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STB11N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp11n52k3-datasheets-5690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | No SVHC | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | GULL WING | STB11N | 4 | Single | 125W | 1 | R-PSSO-G2 | 7 ns | 18ns | 42 ns | 281 ns | 10A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | 40A | 0.51Ohm | 170 mJ | 525V | N-Channel | 1400pF @ 50V | 510m Ω @ 5A, 10V | 4.5V @ 50μA | 10A Tc | 51nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| SQM100N10-10_GE3 | Vishay Siliconix | $2.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm100n1010ge3-datasheets-6088.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | 1 | 375W | 1 | TO-263 (D2Pak) | 8.05nF | 13 ns | 14ns | 10 ns | 44 ns | 100A | 20V | 100V | 375W Tc | N-Channel | 8050pF @ 25V | 10.5mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 185nC @ 10V | 10.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR872DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir872dpt1ge3-datasheets-6012.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 6.25W | 1 | FET General Purpose Powers | R-PDSO-F5 | 53.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 1.5V | 6.25W Ta 104W Tc | 45 mJ | N-Channel | 2130pF @ 75V | 18m Ω @ 20A, 10V | 3.5V @ 250μA | 53.7A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIDR668DP-T1-GE3 | Vishay Siliconix | $2.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr668dpt1ge3-datasheets-6099.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 100V | 6.25W Ta 125W Tc | N-Channel | 5400pF @ 50V | 4.8mOhm @ 20A, 10V | 3.4V @ 250μA | 23.2A Ta 95A Tc | 108nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6008ANX | ROHM Semiconductor | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | TO-220-3 Full Pack | Lead Free | 3 | yes | No | 260 | 3 | Single | 10 | 50W | 1 | FET General Purpose Powers | R-PSFM-T3 | 25 ns | 25ns | 35 ns | 60 ns | 8A | 30V | SILICON | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 8A | 32A | 0.8Ohm | 4.3 mJ | 600V | N-Channel | 680pF @ 25V | 800m Ω @ 4A, 10V | 4.5V @ 1mA | 8A Tc | 21nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SI7148DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7148dpt1e3-datasheets-4845.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | AVALANCHE RATED | No | Pure Matte Tin (Sn) | DUAL | FLAT | 1 | Single | 1 | R-PDSO-F5 | 28A | 20V | SILICON | DRAIN | SWITCHING | 2V | 5.4W Ta 96W Tc | 60A | 75V | N-Channel | 2900pF @ 35V | 90ns | 96ns | 2 V | 11m Ω @ 15A, 10V | 2.5V @ 250μA | 28A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQM50020EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm50020elge3-datasheets-6107.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 375W Tc | 120A | 300A | 0.002Ohm | 281 mJ | N-Channel | 15100pF @ 25V | 2m Ω @ 30A, 10V | 2.5V @ 250μA | 120A Tc | 200nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STB28N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw28n65m2-datasheets-0439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | 2 | 26 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | 8541.29.00.95 | GULL WING | NOT SPECIFIED | STB28N | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 13.4 ns | 59 ns | 20A | 25V | SILICON | DRAIN | SWITCHING | 650V | 650V | 170W Tc | 80A | 0.18Ohm | 760 mJ | N-Channel | 1440pF @ 100V | 180m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| FCMT199N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/onsemiconductor-fcmt199n60-datasheets-6006.pdf | 4-PowerTSFN | 8mm | 1.05mm | 8mm | 33 Weeks | 449.03225mg | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 260 | Single | NOT SPECIFIED | FET General Purpose Power | 20 ns | 10ns | 5 ns | 64 ns | 20.2A | 30V | 600V | 208W Tc | N-Channel | 2950pF @ 100V | 199m Ω @ 10A, 10V | 3.5V @ 250μA | 20.2A Tc | 74nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RCJ330N25TL | ROHM Semiconductor | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.7mm | 9.2mm | Lead Free | 2 | 20 Weeks | 83 | EAR99 | No | GULL WING | 3 | 1 | Single | 1 | FET General Purpose Power | R-PSSO-G2 | 50 ns | 200ns | 140 ns | 120 ns | 33A | 30V | SILICON | SWITCHING | 1.56W Ta 40W Tc | 74.8 mJ | 250V | N-Channel | 4500pF @ 25V | 105m Ω @ 16.5A, 10V | 5V @ 1mA | 33A Tc | 80nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SQM60N20-35_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm60n2035ge3-datasheets-6016.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | 200V | 200V | 375W Tc | 60A | 100A | 0.035Ohm | 33 mJ | N-Channel | 5850pF @ 25V | 35m Ω @ 20A, 10V | 3.5V @ 250μA | 60A Tc | 135nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7658ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7658adpt1ge3-datasheets-5914.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.2mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Powers | R-XDSO-C5 | 45 ns | 18ns | 30 ns | 60 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.5V | 5.4W Ta 83W Tc | 36A | N-Channel | 4590pF @ 15V | 2.2m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 110nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
| TK65G10N1,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | 3.949996g | 1 | Single | D2PAK | 5.4nF | 44 ns | 19ns | 26 ns | 85 ns | 65A | 20V | 100V | 156W Tc | 3.8mOhm | 100V | N-Channel | 5400pF @ 50V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 65A Ta | 81nC @ 10V | 4.5 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC7570S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 8-PowerTDFN | 3.3mm | 1.05mm | 3.3mm | Lead Free | 5 | 10 Weeks | 32.13mg | No SVHC | 2MOhm | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | Single | 59W | 1 | FET General Purpose Power | R-PDSO-N5 | 14 ns | 6.8ns | 4.5 ns | 34 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.3W Ta 59W Tc | MO-240BA | 27A | 25V | N-Channel | 4410pF @ 13V | 1.7 V | 2m Ω @ 27A, 10V | 3V @ 1mA | 27A Ta 40A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| NTMFS5H409NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-ntmfs5h409nlt1g-datasheets-6056.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | 1 | R-PDSO-F5 | 270A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 2V | 3.2W Ta 140W Tc | 900A | 0.0016Ohm | 304 mJ | N-Channel | 5700pF @ 20V | 1.1m Ω @ 50A, 10V | 2V @ 250μA | 41A Ta 270A Tc | 89nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| HAT2279H-EL-E | Renesas Electronics America | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/renesaselectronicsamerica-hat2279hele-datasheets-5837.pdf | SC-100, SOT-669 | Lead Free | 4 | 16 Weeks | 5 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 5 | 25W | 1 | FET General Purpose Power | R-PSFM-G4 | 9.5 ns | 14.5ns | 9.5 ns | 56 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 80V | 80V | 25W Tc | N-Channel | 3520pF @ 10V | 12m Ω @ 15A, 10V | 30A Ta | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIE822DF-T1-GE3 | Vishay Siliconix | $2.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie822dft1ge3-datasheets-5894.pdf | 10-PolarPAK® (S) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 5.2W Ta 104W Tc | 50A | 80A | 0.0034Ohm | 45 mJ | 20V | N-Channel | 4200pF @ 10V | 3.4m Ω @ 18.3A, 10V | 3V @ 250μA | 50A Tc | 78nC @ 10V | 4.5V 10V | ±20V |
