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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TPH3208PD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | https://pdf.utmel.com/r/datasheets/transphorm-tph3208ps-datasheets-1953.pdf | TO-220-3 | 650V | 96W Tc | N-Channel | 760pF @ 400V | 130m Ω @ 13A, 8V | 2.6V @ 300μA | 20A Tc | 14nC @ 8V | 10V | ±18V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCA36N60NF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FRFET®, SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fca36n60nf-datasheets-1786.pdf | TO-3P-3, SC-65-3 | 16.2mm | 20.1mm | 5mm | 3 | 39 Weeks | 6.401g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 312W | 1 | FET General Purpose Power | 27 ns | 17ns | 4 ns | 92 ns | 34.9A | 30V | SILICON | SWITCHING | 3.7V | 312W Tc | 0.095Ohm | 600V | N-Channel | 4245pF @ 100V | 3.7 V | 95m Ω @ 18A, 10V | 5V @ 250μA | 34.9A Tc | 112nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| TPH3205WSB | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3205wsb-datasheets-1795.pdf | TO-247-3 | 10 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 650V | 125W Tc | N-Channel | 2200pF @ 400V | 60m Ω @ 22A, 8V | 2.6V @ 700μA | 36A Tc | 42nC @ 8V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2206N2 | Microchip Technology | $13.79 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 1998 | https://pdf.utmel.com/r/datasheets/microchiptechnology-vp2206n2-datasheets-1811.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 9.4mm | 3 | 6 Weeks | 3 | EAR99 | HIGH INPUT IMPEDANCE | No | e4 | NICKEL GOLD | BOTTOM | WIRE | 1 | Single | 6W | 1 | Other Transistors | 4 ns | 16ns | 22 ns | 16 ns | 750mA | 20V | SILICON | DRAIN | SWITCHING | 60V | 360mW Tc | 0.75A | 0.9Ohm | 40 pF | -60V | P-Channel | 450pF @ 25V | 900m Ω @ 3.5A, 10V | 3.5V @ 10mA | 750mA Tj | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IXFN80N50 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Chassis Mount, Screw | Chassis Mount | -55°C~150°C TJ | Tube | Not Applicable | Screw | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | https://pdf.utmel.com/r/datasheets/ixys-ixfn80n50-datasheets-1824.pdf | 500V | 80A | SOT-227-4, miniBLOC | Lead Free | 4 | 8 Weeks | 36mg | No SVHC | 55mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | Nickel (Ni) | UPPER | UNSPECIFIED | 4 | 780W | 1 | FET General Purpose Power | 70ns | 27 ns | 102 ns | 80A | 20V | 500V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 4.5V | 700W Tc | 250 ns | 250 ns | 320A | 6000 mJ | 500V | N-Channel | 9890pF @ 25V | 4.5 V | 55m Ω @ 500mA, 10V | 4.5V @ 8mA | 66A Tc | 380nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| STL36N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl36n60m6-datasheets-0590.pdf | 8-PowerVDFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 160W Tc | N-Channel | 1960pF @ 100V | 110m Ω @ 12.5A, 10V | 4.75V @ 250μA | 25A Tc | 44.3nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6046FNZ1C9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-247-3 | 3 | 10 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 46A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 120W Tc | 115A | 0.098Ohm | 142 mJ | N-Channel | 6230pF @ 25V | 98m Ω @ 23A, 10V | 5V @ 1mA | 46A Tc | 150nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFK120N30P3 | IXYS | $15.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/ixys-ixfk120n30p3-datasheets-1840.pdf | TO-264-3, TO-264AA | 19.96mm | 26.16mm | 5.13mm | 30 Weeks | 3 | Single | 26 ns | 60 ns | 120A | 20V | 300V | 1130W Tc | N-Channel | 8630pF @ 25V | 27m Ω @ 60A, 10V | 5V @ 4mA | 120A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2858-T1-A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-2sk2858t1a-datasheets-1847.pdf | SC-70, SOT-323 | SC-70-3, SSP, Miniature Mini Mold | 30V | N-Channel | 9pF @ 3V | 5Ohm @ 10mA, 10V | 1.8V @ 10μA | 100mA Ta | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFJ26N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/ixys-ixfj26n50p3-datasheets-1849.pdf | TO-247-3 | 8 Weeks | unknown | 14A | 500V | 180W Tc | N-Channel | 2220pF @ 25V | 265m Ω @ 13A, 10V | 5V @ 4mA | 14A Tc | 42nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH12N120K5-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw12n120k5-datasheets-1855.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5mm | 2 | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | H2PAK-2-8159712 | not_compliant | e3 | SINGLE | GULL WING | 245 | STH12N | 1 | NOT SPECIFIED | 250W | 1 | FET General Purpose Powers | 150°C | R-PSSO-G2 | 23 ns | 11ns | 18.5 ns | 68.5 ns | 12A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 250W Tc | 48A | 0.69Ohm | 1.2kV | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| MMBF2202PT1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-mmbt3906tt1-datasheets-3919.pdf | SC-70, SOT-323 | 3 | yes | e0 | TIN LEAD | YES | DUAL | GULL WING | 240 | 3 | 30 | 1 | COMMERCIAL | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 0.3A | P-Channel | 50pF @ 5V | 2.2 Ω @ 200mA, 10V | 2.4V @ 250μA | 300mA Ta | 2.7nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTA4151PT1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nta4151pt1-datasheets-1867.pdf | SC-75, SOT-416 | 3 | no | unknown | e0 | TIN LEAD | YES | DUAL | GULL WING | 235 | 3 | NOT SPECIFIED | 1 | COMMERCIAL | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 301mW Tj | 0.76A | 0.36Ohm | P-Channel | 156pF @ 5V | 360m Ω @ 350mA, 4.5V | 450mV @ 250μA | 760mA Tj | 2.1nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||
| NTA4001NT1 | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-nta4001nt1-datasheets-1868.pdf | SC-75, SOT-416 | SC-75, SOT-416 | 20V | 300mW Tj | N-Channel | 20pF @ 5V | 3Ohm @ 10mA, 4.5V | 1.5V @ 100μA | 238mA Tj | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3LP01SS-TL-EX | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SC-81 | 3-SSFP | 30V | 150mW Ta | P-Channel | 7.5pF @ 10V | 10.4Ohm @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH360N4F6-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth360n4f62-datasheets-5534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3.949996g | 3 | EAR99 | No | STH360 | 1 | FET General Purpose Powers | 180A | 20V | Single | 40V | 300W Tc | N-Channel | 17930pF @ 25V | 1.25m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 340nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 3LP01M-TL-H | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rochesterelectronicsllc-3lp01mtlh-datasheets-1869.pdf | SC-70, SOT-323 | 3-MCP | 30V | 150mW Ta | P-Channel | 7.5pF @ 10V | 10.4Ohm @ 50mA, 4V | 100mA Ta | 1.43nC @ 10V | 1.5V 4V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw38n65m5-datasheets-2380.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 3 | 17 Weeks | 95MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | THROUGH-HOLE | 245 | STB38N | Single | 30 | 190W | 1 | FET General Purpose Powers | 66 ns | 9ns | 9 ns | 66 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 190W Tc | TO-220AB | 660 mJ | 650V | N-Channel | 3000pF @ 100V | 95m Ω @ 15A, 10V | 5V @ 250μA | 30A Tc | 71nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| STB40N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw40n60m2-datasheets-2538.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 3.949996g | EAR99 | Tin | GULL WING | NOT SPECIFIED | STB40N | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 20.5 ns | 13.5ns | 11 ns | 96 ns | 34A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 250W Tc | 0.088Ohm | 500 mJ | N-Channel | 2500pF @ 100V | 88m Ω @ 17A, 10V | 4V @ 250μA | 34A Tc | 57nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| SIHH068N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh068n60et1ge3-datasheets-1662.pdf | 8-PowerTDFN | 14 Weeks | PowerPAK® 8 x 8 | 600V | 202W Tc | N-Channel | 2650pF @ 100V | 68mOhm @ 15A, 10V | 5V @ 250μA | 34A Tc | 80nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL36N55M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl36n55m5-datasheets-1648.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | Lead Free | 12 Weeks | 90mOhm | 4 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL36 | Single | 150W | 1 | 56 ns | 13ns | 13 ns | 45 ns | 22.5A | 25V | 2.8W Ta 150W Tc | 550V | N-Channel | 2670pF @ 100V | 90m Ω @ 16.5A, 10V | 5V @ 250μA | 22.5A Tc | 62nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STB32N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp32n65m5-datasheets-9831.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 17 Weeks | No SVHC | 119MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | AVALANCHE ENERGY RATED | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB32N | 4 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 53 ns | 12ns | 16 ns | 53 ns | 24A | 25V | SILICON | SWITCHING | 4V | 150W Tc | 96A | 650 mJ | 650V | N-Channel | 3320pF @ 100V | 119m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 72nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| STH400N4F6-2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth400n4f62-datasheets-5517.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.8mm | 15.8mm | 3.949996g | 3 | EAR99 | No | STH400 | 1 | Single | FET General Purpose Powers | 71 ns | 184ns | 168 ns | 168 ns | 180A | 20V | 300W Tc | 40V | N-Channel | 20500pF @ 25V | 1.15m Ω @ 60A, 10V | 4.5V @ 250μA | 180A Tc | 404nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STL57N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl57n65m5-datasheets-1718.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | Lead Free | 4 | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NO LEAD | NOT SPECIFIED | STL57 | Single | NOT SPECIFIED | 2.8W | 1 | S-PSSO-N4 | 84 ns | 84 ns | 22.5A | 25V | SILICON | DRAIN | SWITCHING | 650V | 650V | 2.8W Ta 189W Tc | 22A | 90A | 0.069Ohm | 960 mJ | N-Channel | 4200pF @ 100V | 69m Ω @ 20A, 10V | 5V @ 250μA | 4.3A Ta 22.5A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| STB34NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb34nm60nd-datasheets-1665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 110MOhm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB34N | 4 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 53.4ns | 61.8 ns | 111 ns | 29A | 25V | SILICON | DRAIN | SWITCHING | 600V | 4V | 190W Tc | 650V | N-Channel | 2785pF @ 50V | 110m Ω @ 14.5A, 10V | 5V @ 250μA | 29A Tc | 80.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| IXTA6N50D2-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 24 Weeks | 500V | 300W Tc | N-Channel | 2800pF @ 25V | 500m Ω @ 3A, 0V | 4.5V @ 250μA | 6A Tj | 96nC @ 5V | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA64N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixta64n10l2-datasheets-1737.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 28 Weeks | 1.946308g | not_compliant | e3 | Matte Tin (Sn) | 1 | 14 ns | 27ns | 11 ns | 38 ns | 64A | 20V | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 500mA, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl45n65m5-datasheets-1702.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | 12 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | STL45 | Single | 2.8W | 1 | 79.5 ns | 11ns | 9.3 ns | 79.5 ns | 22.5A | 25V | 650V | 2.8W Ta 160W Tc | N-Channel | 3470pF @ 100V | 86m Ω @ 14.5A, 10V | 5V @ 250μA | 3.8A Ta 22.5A Tc | 82nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STB35N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw35n65m5-datasheets-9852.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 17 Weeks | No SVHC | 98Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB35N | 4 | Single | 30 | 160W | 1 | FET General Purpose Power | R-PSSO-G2 | 60 ns | 12ns | 16 ns | 60 ns | 27A | 25V | SILICON | ISOLATED | SWITCHING | 4V | 160W Tc | 800 mJ | 650V | N-Channel | 3750pF @ 100V | 98m Ω @ 13.5A, 10V | 5V @ 250μA | 27A Tc | 83nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||
| STB36NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb36nm60n-datasheets-1758.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 26 Weeks | 105MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB36N | 4 | 210W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 34ns | 67 ns | 106 ns | 29A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 210W Tc | 25A | 600V | N-Channel | 2722pF @ 100V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 83.6nC @ 10V | 10V | ±25V |
