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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IXTA64N10L2 | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Linear L2™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/ixys-ixta64n10l2-datasheets-1737.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 28 Weeks | 1.946308g | not_compliant | e3 | Matte Tin (Sn) | 1 | 14 ns | 27ns | 11 ns | 38 ns | 64A | 20V | 100V | 357W Tc | N-Channel | 3620pF @ 25V | 32m Ω @ 500mA, 10V | 4.5V @ 250μA | 64A Tc | 100nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl45n65m5-datasheets-1702.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | 12 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | STL45 | Single | 2.8W | 1 | 79.5 ns | 11ns | 9.3 ns | 79.5 ns | 22.5A | 25V | 650V | 2.8W Ta 160W Tc | N-Channel | 3470pF @ 100V | 86m Ω @ 14.5A, 10V | 5V @ 250μA | 3.8A Ta 22.5A Tc | 82nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHH27N60EF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihh27n60eft1ge3-datasheets-1565.pdf | 8-PowerTDFN | 14 Weeks | 600V | 202W Tc | N-Channel | 2609pF @ 100V | 100m Ω @ 13.5A, 10V | 4V @ 250μA | 29A Tc | 135nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZ60R099C7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ C7 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipz60r099c7xksa1-datasheets-1597.pdf | TO-247-4 | Lead Free | 4 | 18 Weeks | yes | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | 22A | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 110W Tc | 83A | 0.099Ohm | 97 mJ | N-Channel | 1819pF @ 400V | 99m Ω @ 9.7A, 10V | 4V @ 490μA | 22A Tc | 42nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB099PW C1G | Taiwan Semiconductor Corporation | $14.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb099pwc1g-datasheets-1608.pdf | TO-247-3 | 36 Weeks | TO-247 | 600V | 329W Tc | N-Channel | 2587pF @ 100V | 99mOhm @ 11.7A, 10V | 4V @ 250μA | 38A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB34NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb34nm60n-datasheets-1611.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | GULL WING | STB34N | Single | 1 | FET General Purpose Powers | R-PSSO-G2 | 17 ns | 34ns | 70 ns | 106 ns | 29A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 3V | 250W Tc | 126A | 0.105Ohm | N-Channel | 2722pF @ 100V | 3 V | 105m Ω @ 14.5A, 10V | 4V @ 250μA | 29A Tc | 84nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STH13N120K5-2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth13n120k52ag-datasheets-1625.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 1200V | 250W Tc | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH21N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihh21n65et1ge3-datasheets-1492.pdf | 8-PowerTDFN | 4 | 18 Weeks | 8 | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PSSO-N4 | 20.3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 156W Tc | 53A | 0.17Ohm | 353 mJ | N-Channel | 2404pF @ 100V | 170m Ω @ 11A, 10V | 4V @ 250μA | 20.3A Tc | 99nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL47N60M6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M6 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl47n60m6-datasheets-1500.pdf | 8-PowerVDFN | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 189W Tc | N-Channel | 80m Ω @ 15.5A, 10V | 4.75V @ 250μA | 31A Tc | 57nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFP26N50P3 | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™, Polar3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/ixys-ixfp26n50p3-datasheets-1510.pdf | TO-220-3 | 10.66mm | 16mm | 4.83mm | 26 Weeks | 3 | Single | 21 ns | 38 ns | 26A | 30V | 500V | 500W Tc | N-Channel | 2220pF @ 25V | 230m Ω @ 13A, 10V | 5V @ 4mA | 26A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB45N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb45n65m5-datasheets-1527.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 3 | 17 Weeks | 78mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | ULTRA LOW RESISTANCE | No | D2Pak | THROUGH-HOLE | STB45N | 1 | Single | 210W | 1 | FET General Purpose Powers | 150°C | 11 ns | 79.5 ns | 35A | 25V | SILICON | DRAIN | SWITCHING | 4V | 210W Tc | TO-220AB | 650V | N-Channel | 3375pF @ 100V | 78m Ω @ 19.5A, 10V | 5V @ 250μA | 35A Tc | 91nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| STB46N30M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb46n30m5-datasheets-1523.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | STB46N | NOT SPECIFIED | 1 | R-PSSO-G2 | 53A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300V | 300V | 250W Tc | 212A | 0.04Ohm | 550 mJ | N-Channel | 4240pF @ 100V | 40m Ω @ 26.5A, 10V | 5V @ 250μA | 53A Tc | 95nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| STL38N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl38n65m5-datasheets-1511.pdf | 8-PowerVDFN | 8mm | 950μm | 8mm | Lead Free | 12 Weeks | 105mOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STL38 | Single | 2.8W | 1 | 66 ns | 9ns | 13 ns | 9 ns | 22.5A | 25V | 2.8W Ta 150W Tc | 650V | N-Channel | 3000pF @ 100V | 105m Ω @ 12.5A, 10V | 5V @ 250μA | 3.5A Ta 22.5A Tc | 71nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDB86135 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdb86135-datasheets-1502.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 8 Weeks | 1.31247g | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | ULTRA LOW-ON RESISTANCE | No | 8541.29.00.95 | e3 | Tin (Sn) | GULL WING | 245 | Single | 30 | 227W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 54ns | 11 ns | 37 ns | 75A | 20V | SILICON | DRAIN | SWITCHING | 2V | 2.4W Ta 227W Tc | 120A | 704A | 658 mJ | 100V | N-Channel | 7295pF @ 25V | 3.5m Ω @ 75A, 10V | 4V @ 250μA | 75A Tc | 116nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||
| STB26NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb26nm60nd-datasheets-1560.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 3.949996g | 3 | EAR99 | No | GULL WING | STB26N | 1 | Single | 1 | R-PSSO-G2 | 22 ns | 14.5ns | 27.5 ns | 69 ns | 21A | 25V | SILICON | DRAIN | SWITCHING | 600V | 600V | 190W Tc | 84A | N-Channel | 1817pF @ 100V | 175m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 54.6nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STB28NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb28nm60nd-datasheets-5498.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 3.949996g | 3 | EAR99 | No | GULL WING | STB28N | 1 | Single | 1 | R-PSSO-G2 | 23.5 ns | 21.5ns | 27 ns | 92 ns | 23A | 25V | SILICON | DRAIN | SWITCHING | 600V | 190W Tc | 92A | 50 mJ | 650V | N-Channel | 2090pF @ 100V | 150m Ω @ 11.5A, 10V | 5V @ 250μA | 23A Tc | 62.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| TSM60NB099CF C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb099cfc0g-datasheets-1574.pdf | TO-220-3 Full Pack | 36 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 69W Tc | N-Channel | 2587pF @ 100V | 99m Ω @ 5.3A, 10V | 4V @ 250μA | 38A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r099cpxksa1-datasheets-1586.pdf | TO-220-3 | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 255W Tc | TO-220AB | 31A | 93A | 0.099Ohm | 800 mJ | N-Channel | 2800pF @ 100V | 99m Ω @ 18A, 10V | 3.5V @ 1.2mA | 31A Tc | 80nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB80N20M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb80n20m5-datasheets-1420.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 16 Weeks | 23MOhm | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 245 | STB80N | 4 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 31ns | 176 ns | 131 ns | 61A | 25V | SILICON | SWITCHING | 190W Tc | 65A | 260A | 200V | N-Channel | 4329pF @ 50V | 23m Ω @ 30.5A, 10V | 5V @ 250μA | 61A Tc | 104nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| SIHB16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp16n50ce3-datasheets-9522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.437803g | 3 | yes | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 250W Tc | 40A | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IPI60R125CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r125cpxksa1-datasheets-1477.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 208W Tc | 25A | 82A | 0.125Ohm | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STL21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl21n65m5-datasheets-1427.pdf | 8-PowerVDFN | Lead Free | 5 | 12 Weeks | 4 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL21 | 8 | 3W | 1 | FET General Purpose Power | S-PDSO-N5 | 10ns | 12 ns | 37 ns | 17A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 125W Tc | 2.7A | 650V | N-Channel | 1950pF @ 100V | 179m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| STB45N30M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb45n30m5-datasheets-1114.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 17 Weeks | NOT SPECIFIED | STB45N | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB30N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb30n80k5-datasheets-1249.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STB30N | NOT SPECIFIED | 800V | 250W Tc | N-Channel | 1530pF @ 100V | 180m Ω @ 12A, 10V | 5V @ 100μA | 24A Tc | 43nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020PNJFRATL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 23 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 304W Tc | N-Channel | 2040pF @ 25V | 250m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Tc | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH250N6F3-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | STH250 | Single | 180A | 20V | 2.6mOhm | 60V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP8030L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp8030l-datasheets-1317.pdf | 30V | 80A | TO-220-3 | Lead Free | 3 | 10 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 187W | 1 | FET General Purpose Power | 20 ns | 185ns | 200 ns | 160 ns | 80A | 20V | SILICON | SWITCHING | 1.5V | 187W Tc | TO-220AB | 30V | N-Channel | 10500pF @ 15V | 1.5 V | 3.5m Ω @ 80A, 10V | 2V @ 250μA | 80A Ta | 170nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STB20N90K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | /files/stmicroelectronics-stb20n90k5-datasheets-1270.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 26 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | STB20N | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 900V | 900V | 250W Tc | 20A | 80A | 0.25Ohm | 500 mJ | N-Channel | 1500pF @ 100V | 250m Ω @ 10A, 10V | 5V @ 100μA | 20A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB33N60ET1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | /files/vishaysiliconix-sihb33n60ege3-datasheets-1747.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | 1.437803g | YES | GULL WING | 1 | 1 | R-PSSO-G2 | 33A | SILICON | SWITCHING | 600V | 600V | 278W Tc | 88A | 0.099Ohm | 793 mJ | N-Channel | 3508pF @ 100V | 99m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB26NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf26nm60n-datasheets-1742.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.83mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 165MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | D2PAK-0079457 | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB26N | 4 | 1 | Single | 30 | 140W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 13 ns | 25ns | 50 ns | 85 ns | 20A | 30V | SILICON | SWITCHING | 2V | 140W Tc | 80A | 600V | N-Channel | 1800pF @ 50V | 165m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 60nC @ 10V | 10V | ±30V |
