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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHB16N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihp16n50ce3-datasheets-9522.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | 1.437803g | 3 | yes | No | GULL WING | 260 | 4 | 1 | Single | 40 | 1 | FET General Purpose Power | R-PSSO-G2 | 27 ns | 156ns | 31 ns | 29 ns | 16A | 30V | SILICON | ISOLATED | SWITCHING | 500V | 500V | 250W Tc | 40A | N-Channel | 1900pF @ 25V | 380m Ω @ 8A, 10V | 5V @ 250μA | 16A Tc | 68nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPI60R125CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipi60r125cpxksa1-datasheets-1477.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | yes | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 600V | 208W Tc | 25A | 82A | 0.125Ohm | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL21N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl21n65m5-datasheets-1427.pdf | 8-PowerVDFN | Lead Free | 5 | 12 Weeks | 4 | NRND (Last Updated: 8 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL21 | 8 | 3W | 1 | FET General Purpose Power | S-PDSO-N5 | 10ns | 12 ns | 37 ns | 17A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 125W Tc | 2.7A | 650V | N-Channel | 1950pF @ 100V | 179m Ω @ 8.5A, 10V | 5V @ 250μA | 17A Tc | 50nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIHW30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihw30n60ege3-datasheets-1275.pdf | TO-3P-3 Full Pack | 3 | 19 Weeks | 38.000013g | Unknown | 3 | yes | No | 1 | Single | 1 | FET General Purpose Powers | 40 ns | 65ns | 75 ns | 95 ns | 29A | 4V | SILICON | SWITCHING | 2V | 250W Tc | TO-247AD | 65A | 690 mJ | 600V | N-Channel | 2600pF @ 100V | 125m Ω @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB28NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf28nm50n-datasheets-2104.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 135mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | GULL WING | 245 | STB28N | 4 | Single | 30 | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 13.6 ns | 19ns | 52 ns | 62 ns | 21A | 25V | SILICON | SWITCHING | 3V | 150W Tc | 84A | 500V | N-Channel | 1735pF @ 25V | 158m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 50nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||
| STB19NM65N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb19nm65n-datasheets-1057.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | No | GULL WING | STB19N | 4 | Single | 150W | 1 | FET General Purpose Power | R-PSSO-G2 | 25 ns | 8ns | 26 ns | 80 ns | 15.5A | 25V | SILICON | SWITCHING | 150W Tc | 62A | 0.27Ohm | 400 mJ | 650V | N-Channel | 1900pF @ 50V | 270m Ω @ 7.75A, 10V | 4V @ 250μA | 15.5A Tc | 55nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3805S-7PPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irf3805s7ppbf-datasheets-1150.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 6 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 55V | 55V | 300W Tc | 160A | 1000A | 0.0026Ohm | 680 mJ | N-Channel | 7820pF @ 25V | 2.6m Ω @ 140A, 10V | 4V @ 250μA | 160A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL18N55M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl18n55m5-datasheets-1078.pdf | 8-PowerVDFN | Lead Free | 4 | 270MOhm | 4 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STL18 | 4 | 3W | 1 | FET General Purpose Power | 9.5ns | 13 ns | 23 ns | 13A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3W Ta 90W Tc | 9.6A | 200 mJ | 550V | N-Channel | 1352pF @ 100V | 270m Ω @ 6A, 10V | 5V @ 250μA | 2.4A Ta 13A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STB47N50DM6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | compliant | NOT SPECIFIED | STB47N | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS6B03NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/onsemiconductor-ntmfs6b03nt1g-datasheets-1161.pdf | 8-PowerTDFN | 6.1mm | 1.05mm | 5.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 5 | ACTIVE (Last Updated: 3 days ago) | yes | not_compliant | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 16 ns | 46ns | 11 ns | 29 ns | 132A | 20V | SILICON | DRAIN | SWITCHING | 100V | 4V | 3.4W Ta 165W Tc | 470A | 0.0048Ohm | N-Channel | 4200pF @ 50V | 4.8m Ω @ 20A, 10V | 4V @ 250μA | 19A Ta 132A Tc | 58nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RSJ650N10TL | ROHM Semiconductor | $5.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 20 Weeks | 83 | EAR99 | No | SINGLE | GULL WING | 3 | 1 | R-PSSO-G2 | 45 ns | 170ns | 480 ns | 640 ns | 65A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 100W Tc | 130A | 0.0098Ohm | N-Channel | 10780pF @ 25V | 9.1m Ω @ 32.5A, 10V | 2.5V @ 1mA | 65A Ta | 260nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STH250N55F3-6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sth250n55f36-datasheets-1181.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Lead Free | 6 | 2.6MOhm | 7 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STH250 | 7 | Single | NOT SPECIFIED | 300W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | 25 ns | 150ns | 50 ns | 110 ns | 180A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 1000 mJ | 55V | N-Channel | 6800pF @ 25V | 2.6m Ω @ 60A, 10V | 4V @ 250μA | 180A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FDMT800100DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmt800100dc-datasheets-1185.pdf | 8-PowerVDFN | Lead Free | 3 | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NO LEAD | 260 | Single | NOT SPECIFIED | 1 | S-PDSO-N3 | 162A | SILICON | DRAIN | SWITCHING | 100V | 100V | 3.2W Ta 156W Tc | 0.00295Ohm | 1536 mJ | N-Channel | 7835pF @ 50V | 2.95m Ω @ 24A, 10V | 4V @ 250μA | 24A Ta 162A Tc | 111nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125CPXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipa60r125cpxksa1-datasheets-1209.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 35W | 1 | Not Qualified | 15 ns | 5ns | 50 ns | 25A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 650V | 35W Tc | TO-220AB | 82A | 708 mJ | N-Channel | 2500pF @ 100V | 125m Ω @ 16A, 10V | 3.5V @ 1.1mA | 25A Tc | 70nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| EPC2030ENGRT | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2030-datasheets-4243.pdf | Die | 16 Weeks | Die | 1.9nF | 31A | 40V | N-Channel | 1900pF @ 20V | 2.4mOhm @ 30A, 5V | 2.5V @ 16mA | 31A Ta | 18nC @ 5V | 2.4 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH120N60E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh120n60et1ge3-datasheets-1103.pdf | 8-PowerTDFN | 18 Weeks | PowerPAK® 8 x 8 | 600V | 156W Tc | N-Channel | 1600pF @ 100V | 120mOhm @ 12A, 10V | 5V @ 250μA | 24A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMT800150DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt800150dc-datasheets-1126.pdf | 8-PowerVDFN | Lead Free | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | 99A | 150V | 3.2W Ta 156W Tc | N-Channel | 8205pF @ 75V | 6.5m Ω @ 15A, 10V | 4V @ 250μA | 15A Ta 99A Tc | 108nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40N10-25_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n1025ge3-datasheets-1109.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | 136W | 1 | TO-252, (D-Pak) | 3.38nF | 11 ns | 11ns | 6 ns | 27 ns | 40A | 20V | 100V | 1.5V | 136W Tc | 25mOhm | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 25 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK15J60U(F) | Toshiba Semiconductor and Storage | $22.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSII | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | TO-3P-3, SC-65-3 | 12 Weeks | 3 | No | Single | 170W | 1 | 37ns | 8 ns | 15A | 30V | 170W Tc | 600V | N-Channel | 950pF @ 10V | 300m Ω @ 7.5A, 10V | 5V @ 1mA | 15A Ta | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB0165N807L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdb0165n807l-datasheets-1088.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 14 Weeks | 1.312g | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | 8541.29.00.95 | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 310A | 80V | 3.8W Ta 300W Tc | N-Channel | 23660pF @ 40V | 1.6m Ω @ 36A, 10V | 4V @ 250μA | 310A Tc | 304nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM85N15-19-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum85n1519e3-datasheets-1034.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 19mOhm | 3 | yes | EAR99 | No | 85A | e3 | Matte Tin (Sn) - annealed | 150V | GULL WING | 4 | 1 | Single | 3.75W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 22 ns | 170ns | 170 ns | 40 ns | 85A | 20V | 150V | SILICON | SWITCHING | 2V | 3.75W Ta 375W Tc | 130 ns | 150V | N-Channel | 4750pF @ 25V | 2 V | 19m Ω @ 30A, 10V | 4V @ 250μA | 85A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| NVBLS0D5N04M8TXG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvbls0d5n04m8txg-datasheets-0758.pdf | 8-PowerSFN | 4 Weeks | yes | 40V | 429W Tj | N-Channel | 15900pF @ 25V | 0.57m Ω @ 80A, 10V | 4V @ 250μA | 300A Tc | 296nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB41N40DM6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb41n40dm6ag-datasheets-0927.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 16 Weeks | compliant | NOT SPECIFIED | STB41N | NOT SPECIFIED | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb24nm60n-datasheets-0807.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 26 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | GULL WING | STB24N | 4 | Single | 125W | 1 | R-PSSO-G2 | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | SWITCHING | 3V | 125W Tc | 68A | 600V | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDB2710 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb2710-datasheets-0979.pdf | 250V | 50A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 42.5MOhm | 2 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 260W | 1 | FET General Purpose Power | Not Qualified | 80 ns | 252ns | 154 ns | 112 ns | 50A | 30V | 250V | SILICON | DRAIN | 4V | 260W Tc | 250V | N-Channel | 7280pF @ 25V | 4 V | 42.5m Ω @ 25A, 10V | 5V @ 250μA | 50A Tc | 101nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STB200N6F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb200n6f3-datasheets-0987.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | not_compliant | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB200N | 4 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 26 ns | 75ns | 14 ns | 86 ns | 120A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 330W Tc | 480A | 918 mJ | N-Channel | 6800pF @ 25V | 3.6m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 100nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| CSD18536KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD18536 | Single | NOT SPECIFIED | 1 | 349A | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.8V | 375W Tc | 200A | 400A | 0.0022Ohm | 51 pF | 819 mJ | N-Channel | 11430pF @ 30V | 1.6m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta 349A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB42N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw42n60m2ep-datasheets-5456.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STB42N | NOT SPECIFIED | 34A | 600V | 250W Tc | N-Channel | 2370pF @ 100V | 87m Ω @ 17A, 10V | 4.75V @ 250μA | 34A Tc | 55nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTHL082N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/onsemiconductor-nthl082n65s3f-datasheets-1009.pdf | TO-247-3 | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 650V | 313W Tc | N-Channel | 3410pF @ 400V | 82m Ω @ 20A, 10V | 5V @ 4mA | 40A Tc | 81nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BBS3002-TL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-bbs3002dl1e-datasheets-0350.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 5.08mm | Lead Free | 2 | 10 Weeks | 2.084002g | 2 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | SINGLE | GULL WING | 2 | 1 | 90W | 1 | 150°C | 95 ns | 1μs | 820 ns | 800 ns | -100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 90W Tc | 400A | 0.009Ohm | 340 mJ | -60V | P-Channel | 13200pF @ 20V | 5.8m Ω @ 50A, 10V | 100A Ta | 280nC @ 10V | 4V 10V | ±20V |
