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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI8489EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8489edbt2e1-datasheets-1092.pdf | 4-UFBGA | 4 | 33 Weeks | 4 | EAR99 | Tin | No | BOTTOM | BALL | 1 | Single | 1.8W | 1 | 27 ns | 20ns | 25 ns | 50 ns | 5.4A | 12V | SILICON | SWITCHING | 20V | 780mW Ta 1.8W Tc | -20V | P-Channel | 765pF @ 10V | 44m Ω @ 1.5A, 10V | 1.2V @ 250μA | 27nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J213FE(TE85L,F | Toshiba Semiconductor and Storage | $0.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | SOT-563, SOT-666 | 290pF | 12 Weeks | 6 | EAR99 | unknown | Single | 500mW | Other Transistors | 2.6A | 8V | 20V | 500mW Ta | -20V | P-Channel | 290pF @ 10V | 103m Ω @ 1.5A, 4.5V | 1V @ 1mA | 2.6A Ta | 4.7nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6110SFDF-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/diodesincorporated-dmp6110sfdf7-datasheets-1049.pdf | 6-UDFN Exposed Pad | 6 | 18 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | 260 | 30 | 1 | S-PDSO-N6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.97W Ta | 3.5A | 0.11Ohm | P-Channel | 969pF @ 30V | 110m Ω @ 4.5A, 10V | 3V @ 250μA | 4.2A Ta | 17.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3442CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3442cdvt1ge3-datasheets-1184.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.1mm | 1mm | 1.7mm | 6 | 15 Weeks | 19.986414mg | No SVHC | 6 | EAR99 | No | DUAL | GULL WING | 1 | Single | 1.7W | 1 | FET General Purpose Power | 9 ns | 17 ns | 8A | 12V | SILICON | SWITCHING | 600mV | 1.7W Ta 2.7W Tc | 8A | 0.027Ohm | 20V | N-Channel | 335pF @ 10V | 27m Ω @ 6.5A, 10V | 1.5V @ 250μA | 8A Tc | 14nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| FDC645N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc645n-datasheets-1172.pdf | 30V | 5.5A | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 26MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | 1 | Single | 1.6W | 1 | FET General Purpose Power | 150°C | 8 ns | 9ns | 9 ns | 35 ns | 5.5A | 12V | 30V | SILICON | SWITCHING | 1.4V | 1.6W Ta | 0.0055A | 30V | N-Channel | 1460pF @ 15V | 1.4 V | 26m Ω @ 6.2A, 10V | 2V @ 250μA | 5.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||
| SI8817DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8817dbt2e1-datasheets-1192.pdf | 4-XFBGA | Lead Free | 4 | 44 Weeks | 4 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | BALL | 1 | Single | 900mW | 1 | 2.9A | 8V | SILICON | SWITCHING | 20V | 500mW Ta | -20V | P-Channel | 615pF @ 10V | 76m Ω @ 1A, 4.5V | 1V @ 250μA | 19nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ5C020TPTL | ROHM Semiconductor | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rq5c020tptl-datasheets-0920.pdf | SC-96 | 16 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 700mW Ta | P-Channel | 430pF @ 10V | 135m Ω @ 2A, 4.5V | 2V @ 1mA | 2A Ta | 4.9nC @ 2.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS138-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-bss138f085-datasheets-1028.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | 30mg | LIFETIME (Last Updated: 4 days ago) | yes | DUAL | GULL WING | Single | 1 | R-PDSO-G3 | SILICON | SWITCHING | 50V | 50V | 360mW Ta | 0.22A | 6Ohm | N-Channel | 27pF @ 25V | 3.5 Ω @ 220mA, 10V | 1.5V @ 1mA | 220mA Ta | 2.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RV3CA01ZPT2CL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rv3ca01zpt2cl-datasheets-0990.pdf | 3-XFDFN | 3 | 16 Weeks | EAR99 | not_compliant | YES | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | 20V | 20V | 100mW Ta | 0.1A | 5.1Ohm | P-Channel | 7.5pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | 100mA Ta | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RRL035P03FRATR | ROHM Semiconductor | $1.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | 6-SMD, Flat Leads | 16 Weeks | EAR99 | not_compliant | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | P-Channel | 800pF @ 10V | 50m Ω @ 3.5A, 10V | 2.5V @ 1mA | 3.5A Ta | 14nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RW1A013ZPT2R | ROHM Semiconductor | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohm-rw1a013zpt2r-datasheets-3811.pdf | SOT-563, SOT-666 | Lead Free | 6 | 10 Weeks | 6 | EAR99 | No | DUAL | FLAT | 1 | Single | 1 | Other Transistors | 8 ns | 10ns | 9 ns | 30 ns | 1.5A | 10V | SILICON | SWITCHING | 12V | 400mW Ta | -12V | P-Channel | 290pF @ 6V | 260m Ω @ 1.3A, 4.5V | 1V @ 1mA | 1.5A Ta | 2.4nC @ 4.5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||
| DMN61D8LQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn61d8lq13-datasheets-0961.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 17 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | 470mA | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 60V | 60V | 390mW Ta | 0.47A | 2.4Ohm | N-Channel | 12.9pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 470mA Ta | 0.74nC @ 5V | 3V 5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3016LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmn3016lps13-datasheets-0816.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 10.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.18W Ta | 9.5A | 70A | 0.016Ohm | 24 mJ | N-Channel | 1415pF @ 15V | 12m Ω @ 20A, 10V | 2V @ 250μA | 10.8A Ta | 25.1nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PSMN9R8-30MLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn9r830mlc115-datasheets-0821.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | 8 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 8 | 45W | 1 | R-PSSO-G4 | 7.4 ns | 7.7ns | 5.3 ns | 11.7 ns | 50A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | 202A | 30V | N-Channel | 690pF @ 15V | 9.8m Ω @ 15A, 10V | 1.95V @ 1mA | 50A Tc | 10.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| AO7400 | Alpha & Omega Semiconductor Inc. | $0.18 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-70, SOT-323 | Lead Free | 6 | No | 350mW | 1 | 1.7A | 12V | 30V | 350mW Ta | N-Channel | 390pF @ 15V | 85m Ω @ 1.5A, 10V | 1.4V @ 250μA | 1.7A Ta | 4.82nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J133TU,LF | Toshiba Semiconductor and Storage | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 3-SMD, Flat Lead | 12 Weeks | UFM | 840pF | 5.5A | 20V | 500mW Ta | P-Channel | 840pF @ 10V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 5.5A Ta | 12.8nC @ 4.5V | 29.8 mΩ | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJK005N03T146 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rjk005n03t146-datasheets-0791.pdf | 30V | 500mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.6mm | Lead Free | 3 | No SVHC | 580MOhm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 9 ns | 11ns | 11 ns | 16 ns | 500mA | 12V | SILICON | SWITCHING | 200mW Ta | 0.5A | 30V | N-Channel | 60pF @ 10V | 580m Ω @ 500mA, 4.5V | 1.5V @ 1mA | 500mA Ta | 4nC @ 4V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| DMN1045UFR4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn1045ufr47-datasheets-0734.pdf | 3-XFDFN | 3 | 22 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | 3.2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 500mW Ta | 0.064Ohm | N-Channel | 375pF @ 10V | 45m Ω @ 3.2A, 4.5V | 1V @ 250μA | 3.2A Ta | 4.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ3E080GNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/rohmsemiconductor-rq3e080gntb-datasheets-0801.pdf | 8-PowerVDFN | 900μm | Lead Free | 5 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | FLAT | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 2W | 1 | 150°C | R-PDSO-F5 | 6.9 ns | 3.6ns | 2.4 ns | 17.3 ns | 8A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta 15W Tc | 8A | 32A | 30V | N-Channel | 295pF @ 15V | 16.7m Ω @ 8A, 10V | 2.5V @ 1mA | 8A Ta | 5.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDC8886 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdc8886-datasheets-0761.pdf | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | 6 | 13 Weeks | 36mg | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | FET General Purpose Power | 5 ns | 1ns | 1 ns | 11 ns | 6.5A | 20V | SILICON | SWITCHING | 1.6W Ta | MO-193AA | 8A | 0.023Ohm | 25 pF | 30V | N-Channel | 465pF @ 15V | 23m Ω @ 6.5A, 10V | 3V @ 250μA | 6.5A Ta 8A Tc | 7.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PMV28UNEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv28unear-datasheets-0774.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | AEC-Q101; IEC-60134 | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | 4.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 510mW Ta 3.9W Tc | TO-236AB | 2.9A | 0.032Ohm | N-Channel | 490pF @ 10V | 32m Ω @ 4.7A, 4.5V | 1V @ 250μA | 4.7A Ta | 10nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMS3016SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/diodesincorporated-dms3016sss13-datasheets-0953.pdf | 8-SOIC (0.154, 3.90mm Width) | 7 Weeks | 73.992255mg | No SVHC | 8 | No | 1 | 1.54W | 1 | 8-SO | 1.849nF | 6.62 ns | 8.73ns | 4.69 ns | 36.41 ns | 9.8A | 12V | 30V | 1V | 1.54W Ta | 9mOhm | N-Channel | 1849pF @ 15V | 13mOhm @ 9.8A, 10V | 2.3V @ 250μA | 9.8A Ta | 43nC @ 10V | Schottky Diode (Body) | 13 mΩ | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3025LFV-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/diodesincorporated-dmn3025lfv13-datasheets-0718.pdf | 8-PowerVDFN | 16 Weeks | e3 | Matte Tin (Sn) | 30V | 900mW Ta | N-Channel | 500pF @ 15V | 18m Ω @ 7A, 10V | 2V @ 250μA | 25A Tc | 9.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STR1P2UH7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ H7 | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-str1p2uh7-datasheets-0740.pdf | TO-236-3, SC-59, SOT-23-3 | EAR99 | NOT SPECIFIED | STR1 | NOT SPECIFIED | 1.4A | 20V | 350mW Tc | P-Channel | 510pF @ 10V | 100m Ω @ 700mA, 4.5V | 1V @ 250μA | 1.4A Ta | 4.8nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1464EEH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq1464eeht1ge3-datasheets-0742.pdf | 6-TSSOP, SC-88, SOT-363 | 12 Weeks | SC-70-6 | 60V | 430mW Tc | N-Channel | 140pF @ 25V | 1.41Ohm @ 2A, 1.5V | 1V @ 250μA | 440mA Tc | 4.1nC @ 4.5V | 1.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MGSF2N02ELT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-mvsf2n02elt1g-datasheets-9211.pdf | 20V | 2.8A | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 10 Weeks | No SVHC | 85MOhm | 3 | ACTIVE (Last Updated: 8 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 1.25W | 1 | FET General Purpose Power | 6 ns | 95ns | 95 ns | 28 ns | 2.8A | 8V | SILICON | SWITCHING | 1V | 1.25W Ta | 5A | 20V | N-Channel | 150pF @ 5V | 500 mV | 85m Ω @ 3.6A, 4.5V | 1V @ 250μA | 2.8A Ta | 3.5nC @ 4V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||
| SSM3K56MFV,L3F | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SOT-723 | 16 Weeks | 3 | No | 5.5 ns | 8.5 ns | 800mA | 8V | 20V | 150mW Ta | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK2731T146 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/rohmsemiconductor-2sk2731t146-datasheets-0543.pdf | 30V | 200mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1.1mm | 1.6mm | Lead Free | 3 | 4.5Ohm | 3 | yes | EAR99 | Copper, Silver, Tin | No | 8541.21.00.95 | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 15 ns | 20ns | 20 ns | 90 ns | 200mA | 20V | SILICON | SWITCHING | 200mW Ta | 0.2A | 30V | N-Channel | 25pF @ 10V | 2.8 Ω @ 100mA, 10V | 2.5V @ 1mA | 200mA Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMP2040UFDF-7 | Diodes Incorporated | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2040ufdf7-datasheets-0507.pdf | 6-UDFN Exposed Pad | 22 Weeks | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NOT SPECIFIED | NOT SPECIFIED | 20V | 1.8W Ta | P-Channel | 834pF @ 10V | 32m Ω @ 8.9A, 4.5V | 1.5V @ 250μA | 13A Tc | 19nC @ 8V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN62D1SFB-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn62d1sfb7b-datasheets-0606.pdf | 3-UFDFN | 3 | 16 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 3 | 1 | 40 | 470mW | 1 | FET General Purpose Powers | 3.89 ns | 4.93ns | 11.96 ns | 18.8 ns | 410mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 470mW Ta | N-Channel | 80pF @ 40V | 1.4 Ω @ 40mA, 10V | 2.3V @ 250μA | 410mA Ta | 2.8nC @ 10V | 4.5V 10V | ±20V |
