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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| QS5U27TR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | -20V | -1.5A | SOT-23-5 Thin, TSOT-23-5 | Lead Free | 5 | 20 Weeks | No SVHC | 5 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 5 | Single | 10 | 1.25W | 1 | Other Transistors | 10 ns | 10ns | 10 ns | 35 ns | 1.5A | 12V | -20V | SILICON | SWITCHING | 20V | 1.25W Ta | 0.24Ohm | -20V | P-Channel | 325pF @ 10V | -2 V | 200m Ω @ 1.5A, 4.5V | 2V @ 1mA | 1.5A Ta | 4.2nC @ 4.5V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| DMP3018SFV-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmp3018sfv7-datasheets-3409.pdf | 8-PowerVDFN | 22 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 30V | 1W Ta | P-Channel | 2147pF @ 15V | 12m Ω @ 11.5A, 10V | 3V @ 250μA | 11A Ta 35A Tc | 51nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2309CDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2309cdst1ge3-datasheets-7356.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | 345mOhm | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | SI2309 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | 150°C | 5 ns | 35ns | 35 ns | 15 ns | -1.2A | 20V | SILICON | SWITCHING | 60V | -1V | 1W Ta 1.7W Tc | -60V | P-Channel | 210pF @ 30V | 345m Ω @ 1.25A, 10V | 3V @ 250μA | 1.6A Tc | 4.1nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| FQN1N60CTA | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqn1n60cta-datasheets-3434.pdf&product=onsemiconductor-fqn1n60cta-6834322 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 5.2mm | 5.33mm | 4.19mm | Lead Free | 3 | 14 Weeks | 240mg | No SVHC | 11.5Ohm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | BOTTOM | Single | 1W | 1 | FET General Purpose Power | 7 ns | 21ns | 27 ns | 13 ns | 300mA | 30V | SILICON | SWITCHING | 4V | 1W Ta 3W Tc | 6 pF | 600V | N-Channel | 170pF @ 25V | 11.5 Ω @ 150mA, 10V | 4V @ 250μA | 300mA Tc | 6.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| DMP4047LFDE-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/diodesincorporated-dmp4047lfde7-datasheets-3386.pdf | 6-UDFN Exposed Pad | 2.05mm | 580μm | 2.05mm | Lead Free | 3 | 17 Weeks | No SVHC | 6 | yes | EAR99 | HIGH RELIABILITY | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | NO LEAD | 260 | 1 | Single | 40 | 1 | Other Transistors | S-PDSO-N3 | 18.4 ns | 28.2ns | 28.6 ns | 38.8 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 40V | -2.2V | 700mW Ta | 3.3A | 0.033Ohm | -40V | P-Channel | 1382pF @ 20V | 33m Ω @ 4.4A, 10V | 2.2V @ 250μA | 3.3A Ta | 23.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SI2338DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2338dst1ge3-datasheets-3345.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.3W | 1 | FET General Purpose Power | 3 ns | 11ns | 7 ns | 20 ns | 6A | 20V | SILICON | SWITCHING | 2.5V | 1.3W Ta 2.5W Tc | 6A | 25A | 0.028Ohm | 30V | N-Channel | 424pF @ 15V | 28m Ω @ 5.5A, 10V | 2.5V @ 250μA | 6A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| AON2290 | Alpha & Omega Semiconductor Inc. | $0.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 6-UDFN Exposed Pad | 18 Weeks | 6 | 2.8W | 1 | FET General Purpose Powers | 4.5A | 20V | Single | 100V | 2.8W Ta | N-Channel | 415pF @ 50V | 72m Ω @ 4.5A, 10V | 2.8V @ 250μA | 4.5A Ta | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDG316P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fdg316p-datasheets-2379.pdf | 30V | 1.6A | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 10 Weeks | 28mg | No SVHC | 190MOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 750mW | 1 | Other Transistors | 8 ns | 9ns | 9 ns | 14 ns | 1.6A | 20V | SILICON | SWITCHING | -1.6V | 750mW Ta | -30V | P-Channel | 165pF @ 15V | 190m Ω @ 1.6A, 10V | 3V @ 250μA | 1.6A Ta | 5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRLMS1902TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irlms1902trpbf-datasheets-3277.pdf | 20V | 3.2A | SOT-23-6 | 2.9972mm | 1.143mm | 1.75mm | Lead Free | 6 | 12 Weeks | No SVHC | 10Ohm | 3 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | Single | 1.7W | 1 | R-PDSO-G6 | 7 ns | 11ns | 4 ns | 12 ns | 3.2A | 12V | SILICON | SWITCHING | 700mV | 1.7W Ta | 20V | N-Channel | 300pF @ 15V | 700 mV | 100m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 3.2A Ta | 7nC @ 4.5V | 2.7V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| RRR030P03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohm-rrr030p03tl-datasheets-2492.pdf | SC-96 | 2.9mm | 900μm | 1.6mm | 3 | 20 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 7 ns | 18ns | 35 ns | 50 ns | 3A | 20V | SILICON | SWITCHING | 30V | 1W Ta | 3A | 0.075Ohm | -30V | P-Channel | 480pF @ 10V | 75m Ω @ 3A, 10V | 2.5V @ 1mA | 3A Ta | 5.2nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TSM2307CX RFG | Taiwan Semiconductor Corporation | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2307cxrfg-datasheets-3339.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 28 Weeks | EAR99 | ULTRA LOW RESISTANCE | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.25W Ta | 3A | 20A | 0.095Ohm | P-Channel | 565pF @ 30V | 95m Ω @ 3A, 10V | 3V @ 250μA | 3A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| RSR020N06TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | SC-96 | 3mm | 950μm | 1.8mm | Lead Free | 3 | 20 Weeks | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | 1 | Single | 10 | 1 | FET General Purpose Power | 6 ns | 10ns | 6 ns | 20 ns | 2A | 20V | SILICON | SWITCHING | 540mW Ta | 2A | 60V | N-Channel | 180pF @ 10V | 170m Ω @ 2A, 10V | 2.5V @ 1mA | 2A Ta | 4.9nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| RZR025P01TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohm-rzr025p01tl-datasheets-2496.pdf | SC-96 | 2.9mm | 850μm | 1.6mm | Lead Free | 3 | 20 Weeks | No SVHC | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | Other Transistors | 9 ns | 35ns | 85 ns | 130 ns | 2.5A | 10V | SILICON | SWITCHING | 12V | -300mV | 1W Ta | 0.061Ohm | -12V | P-Channel | 1350pF @ 6V | -300 mV | 61m Ω @ 2.5A, 4.5V | 1V @ 1mA | 2.5A Ta | 13nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||
| TSM2323CX RFG | Taiwan Semiconductor Corporation | $0.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2323cxrfg-datasheets-3358.pdf | TO-236-3, SC-59, SOT-23-3 | 28 Weeks | SOT-23 | 20V | 1.25W Ta | P-Channel | 1020pF @ 10V | 39mOhm @ 4.7A, 4.5V | 1V @ 250μA | 4.7A Ta | 12.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCT06P10-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/microcommercialco-mct06p10tp-datasheets-3399.pdf | TO-261-4, TO-261AA | 12 Weeks | 260 | 10 | 100V | 1.25W | P-Channel | 760pF @ 25V | 205m Ω @ 6A, 10V | 2.8V @ 250μA | 6A | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3476DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3476dvt1ge3-datasheets-3402.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | No SVHC | 6 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 1 | 26 ns | 50ns | 15 ns | 12 ns | 4.6A | 20V | SILICON | SWITCHING | 2W Ta 3.6W Tc | 0.093Ohm | 80V | N-Channel | 195pF @ 40V | 93m Ω @ 3.5A, 10V | 3V @ 250μA | 4.6A Tc | 7.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFH8334TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfh8334trpbf-datasheets-3413.pdf | 8-PowerTDFN | 5 | 12 Weeks | No SVHC | 8 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 30 | 3.2W | 1 | FET General Purpose Power | R-PDSO-F5 | 8.3 ns | 14ns | 4.6 ns | 7 ns | 14A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.2W Ta 30W Tc | 0.009Ohm | 35 mJ | 30V | N-Channel | 1180pF @ 10V | 1.8 V | 9m Ω @ 20A, 10V | 2.35V @ 25μA | 14A Ta 44A Tc | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD13383F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd13383f4t-datasheets-2470.pdf | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 5 days ago) | yes | BOTTOM | NO LEAD | NOT SPECIFIED | CSD13383 | 1 | Single | NOT SPECIFIED | 1 | 39 ns | 123ns | 315 ns | 96 ns | 2.9A | 10V | SILICON | DRAIN | SWITCHING | 1V | 500mW Ta | 0.065Ohm | 12V | N-Channel | 291pF @ 6V | 44m Ω @ 500mA, 4.5V | 1.25V @ 250μA | 2.9A Ta | 2.6nC @ 4.5V | 2.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| SSM6J505NU,LF | Toshiba Semiconductor and Storage | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 6-WDFN Exposed Pad | 6 | 12 Weeks | 6 | unknown | DUAL | NO LEAD | Single | 1.25W | 1 | 12A | 6V | SILICON | DRAIN | SWITCHING | 12V | 1.25W Ta | 30A | -12V | P-Channel | 2700pF @ 10V | 12m Ω @ 4A, 4.5V | 1V @ 1mA | 12A Ta | 37.6nC @ 4.5V | 1.2V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD2922 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 18 Weeks | TO-252, (D-Pak) | 310pF | 7A | 100V | 5W Ta 17W Tc | N-Channel | 310pF @ 50V | 140mOhm @ 5A, 10V | 2.7V @ 250μA | 3.5A Ta 7A Tc | 10nC @ 10V | 140 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2399DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2399dst1ge3-datasheets-3099.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 2.5W | 1 | Other Transistors | 150°C | 22 ns | 20ns | 9 ns | 28 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | -600mV | 2.5W Tc | 6A | -20V | P-Channel | 835pF @ 10V | -600 mV | 34m Ω @ 5.1A, 10V | 1.5V @ 250μA | 6A Tc | 20nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||
| SI3433CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3433cdvt1ge3-datasheets-2732.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 38MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.6W | 1 | Other Transistors | 150°C | 20 ns | 22ns | 20 ns | 50 ns | -5.2A | 8V | SILICON | SWITCHING | 20V | -1V | 1.6W Ta 3.3W Tc | 6A | -20V | P-Channel | 1300pF @ 10V | -1 V | 38m Ω @ 5.2A, 4.5V | 1V @ 250μA | 6A Tc | 45nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||
| BUK98180-100A/CUX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk98180100acux-datasheets-2874.pdf | TO-261-4, TO-261AA | 1.8mm | 4 | 16 Weeks | 4 | Tin | e3 | TIN | YES | DUAL | GULL WING | 260 | 4 | 1 | 30 | 8W | 1 | 150°C | 7 ns | 89ns | 25 ns | 18 ns | 4.6A | 10V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 8W Tc | 100V | N-Channel | 619pF @ 25V | 173m Ω @ 5A, 10V | 2V @ 1mA | 4.6A Tc | 4.5V 10V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| RS1G120MNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PDSO-F5 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 25W Tc | 0.0207Ohm | N-Channel | 570pF @ 20V | 16.2m Ω @ 12A, 10V | 2.5V @ 1mA | 12A Ta | 9.4nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1480DH-T1-GE3 | Vishay Siliconix | $1.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1480dht1ge3-datasheets-3008.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 2.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 1.6V | 1.5W Ta 2.8W Tc | 0.2Ohm | N-Channel | 130pF @ 50V | 200m Ω @ 1.9A, 10V | 3V @ 250μA | 2.6A Tc | 5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SI8466EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8466edbt2e1-datasheets-2991.pdf | 4-UFBGA, WLCSP | 4 | 33 Weeks | 4 | EAR99 | unknown | BOTTOM | BALL | 1 | Single | 1.8W | 1 | 20 ns | 30ns | 20 ns | 80 ns | 5.4A | 700mV | SILICON | SWITCHING | 780mW Ta 1.8W Tc | 8V | N-Channel | 710pF @ 4V | 43m Ω @ 2A, 4.5V | 700mV @ 250μA | 13nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA817EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia817edjt1ge3-datasheets-3022.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | yes | EAR99 | No | Dual | 6.5W | 20ns | 10 ns | 23 ns | 4.5A | 12V | 30V | 1.9W Ta 6.5W Tc | -30V | P-Channel | 600pF @ 15V | 65m Ω @ 3A, 10V | 1.3V @ 250μA | 4.5A Tc | 23nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC642P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc642p-datasheets-3054.pdf | -20V | -4A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 65mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.6W | 1 | Other Transistors | Not Qualified | 6 ns | 7ns | 7 ns | 120 ns | 4A | 8V | SILICON | SWITCHING | 20V | -600mV | 1.6W Ta | 4A | -20V | P-Channel | 925pF @ 10V | 65m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| CSD17318Q2 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17318q2-datasheets-2448.pdf | 6-WDFN Exposed Pad | 2mm | 800μm | 2mm | 6 | 6 Weeks | 6 | ACTIVE (Last Updated: 3 days ago) | yes | 750μm | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | YES | DUAL | NO LEAD | NOT SPECIFIED | CSD17318 | 1 | Single | NOT SPECIFIED | 2.5W | 1 | 150°C | 5 ns | 13 ns | 10A | 10V | SILICON | DRAIN | SWITCHING | 16W Tc | 0.03Ohm | 7.7 mJ | 30V | N-Channel | 879pF @ 15V | 15.1m Ω @ 8A, 8V | 1.2V @ 250μA | 25A Tc | 6nC @ 4.5V | 2.5V 8V | ±10V | ||||||||||||||||||||||||||||||||||||||
| NVE4153NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-nta4153nt1g-datasheets-6401.pdf | SC-89, SOT-490 | 1.7mm | 800μm | 950μm | Lead Free | 8 Weeks | 29.993795mg | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | e3 | Tin (Sn) | 1 | Single | 3.7 ns | 4.4ns | 7.6 ns | 25 ns | 915mA | 6V | 760mV | 300mW Tj | 20V | N-Channel | 110pF @ 16V | 230m Ω @ 600mA, 4.5V | 1.1V @ 250μA | 915mA Ta | 1.82nC @ 4.5V | 1.5V 4.5V | ±6V |
