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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RS1G120MNTB | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | 8-PowerTDFN | Lead Free | 5 | 20 Weeks | 8 | EAR99 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PDSO-F5 | 12A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 3W Ta 25W Tc | 0.0207Ohm | N-Channel | 570pF @ 20V | 16.2m Ω @ 12A, 10V | 2.5V @ 1mA | 12A Ta | 9.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1480DH-T1-GE3 | Vishay Siliconix | $1.61 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1480dht1ge3-datasheets-3008.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | 2.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 1.6V | 1.5W Ta 2.8W Tc | 0.2Ohm | N-Channel | 130pF @ 50V | 200m Ω @ 1.9A, 10V | 3V @ 250μA | 2.6A Tc | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8466EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8466edbt2e1-datasheets-2991.pdf | 4-UFBGA, WLCSP | 4 | 33 Weeks | 4 | EAR99 | unknown | BOTTOM | BALL | 1 | Single | 1.8W | 1 | 20 ns | 30ns | 20 ns | 80 ns | 5.4A | 700mV | SILICON | SWITCHING | 780mW Ta 1.8W Tc | 8V | N-Channel | 710pF @ 4V | 43m Ω @ 2A, 4.5V | 700mV @ 250μA | 13nC @ 4.5V | 1.2V 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA817EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sia817edjt1ge3-datasheets-3022.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | yes | EAR99 | No | Dual | 6.5W | 20ns | 10 ns | 23 ns | 4.5A | 12V | 30V | 1.9W Ta 6.5W Tc | -30V | P-Channel | 600pF @ 15V | 65m Ω @ 3A, 10V | 1.3V @ 250μA | 4.5A Tc | 23nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC642P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdc642p-datasheets-3054.pdf | -20V | -4A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 13 Weeks | 36mg | No SVHC | 65mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.6W | 1 | Other Transistors | Not Qualified | 6 ns | 7ns | 7 ns | 120 ns | 4A | 8V | SILICON | SWITCHING | 20V | -600mV | 1.6W Ta | 4A | -20V | P-Channel | 925pF @ 10V | 65m Ω @ 4A, 4.5V | 1.5V @ 250μA | 4A Ta | 16nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SQ2351ES-T1_GE3 | Vishay Siliconix | $1.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2351est1ge3-datasheets-2814.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 12 Weeks | 115mOhm | 3 | SOT-23-3 (TO-236) | 20 ns | 18ns | 8 ns | 19 ns | 3.2A | 12V | 20V | 2W Tc | 115mOhm | P-Channel | 330pF @ 10V | 115mOhm @ 2.4A, 4.5V | 1.5V @ 250μA | 3.2A Tc | 5.5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2315ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sq2315est1ge3-datasheets-2824.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 12 Weeks | Unknown | 3 | No | 1 | 2W | 1 | 175°C | SOT-23-3 (TO-236) | 17 ns | 19ns | 13 ns | 28 ns | -5A | 8V | 12V | -450mV | 2W Tc | 42mOhm | -12V | P-Channel | 870pF @ 4V | 50mOhm @ 3.5A, 10V | 1V @ 250μA | 5A Tc | 13nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD15380F3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 690μm | 600μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 345μm | BOTTOM | 260 | CSD15380 | Single | NOT SPECIFIED | 1 | 500mA | SILICON | SWITCHING | 20V | 20V | 1.1V | 500mW Ta | 0.5A | 4Ohm | 0.17 pF | N-Channel | 10.5pF @ 10V | 1190m Ω @ 100mA, 8V | 1.35V @ 2.5μA | 500mA Ta | 0.281nC @ 10V | 2.5V 8V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA459EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia459edjt1ge3-datasheets-2867.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 3 | 14 Weeks | Unknown | 28mOhm | 6 | EAR99 | e3 | Matte Tin (Sn) - annealed | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-N3 | 20 ns | 25ns | 20 ns | 40 ns | -9A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 2.9W Ta 15.6W Tc | 9A | 40A | -20V | P-Channel | 885pF @ 10V | 35m Ω @ 5A, 4.5V | 1.2V @ 250μA | 9A Tc | 30nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||
| SI2336DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2336dst1ge3-datasheets-2871.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 150°C | 6 ns | 10ns | 10 ns | 20 ns | 5.2A | 8V | SILICON | SWITCHING | 1V | 1.25W Ta 1.8W Tc | 0.042Ohm | 30V | N-Channel | 560pF @ 15V | 400 mV | 42m Ω @ 3.8A, 4.5V | 1V @ 250μA | 5.2A Tc | 15nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||
| FDN342P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fdn342p-datasheets-2881.pdf | -20V | -2A | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 940μm | 1.4mm | Lead Free | 3 | 10 Weeks | 30mg | No SVHC | 80mOhm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 500mW | 1 | Other Transistors | 20 ns | 8ns | 8 ns | 9 ns | 2A | 12V | 20V | SILICON | SWITCHING | 1.05V | 500mW Ta | 2A | -20V | P-Channel | 635pF @ 10V | 1.05 V | 80m Ω @ 2A, 4.5V | 1.5V @ 250μA | 2A Ta | 9nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
| CSD17382F4T |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | BOTTOM | NO LEAD | CSD17382 | Single | 1 | 2.3A | SILICON | DRAIN | SWITCHING | 30V | 900mV | 500mW Ta | 14.8A | 0.18Ohm | 19.5 pF | 2.1 mJ | N-Channel | 347pF @ 15V | 64m Ω @ 500mA, 8V | 1.2V @ 250μA | 2.3A Ta | 2.7nC @ 4.5V | 1.8V 8V | 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25483F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | BOTTOM | NO LEAD | 260 | CSD25483 | 1 | Single | NOT SPECIFIED | 1 | 4.3 ns | 3.7ns | 7 ns | 17.4 ns | 1.6A | -12V | SILICON | SWITCHING | 20V | 20V | -950mV | 500mW Ta | P-Channel | 198pF @ 10V | 205m Ω @ 500mA, 8V | 1.2V @ 250μA | 1.6A Ta | 0.96nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI2308BDS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/vishaysiliconix-si2308bdst1ge3-datasheets-6743.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 156MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.09W | 1 | FET General Purpose Powers | 150°C | 4 ns | 16ns | 16 ns | 10 ns | 1.9A | 20V | SILICON | SWITCHING | 1V | 1.09W Ta 1.66W Tc | 60V | N-Channel | 190pF @ 30V | 156m Ω @ 1.9A, 10V | 3V @ 250μA | 2.3A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| CSD17483F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | BOTTOM | NO LEAD | 260 | CSD17483 | Single | NOT SPECIFIED | 500mW | 1 | 3.3 ns | 1.3ns | 3.4 ns | 10.6 ns | 1.5A | 12V | SILICON | DRAIN | SWITCHING | 850mV | 500mW Ta | 0.55Ohm | 30V | N-Channel | 190pF @ 15V | 240m Ω @ 500mA, 8V | 1.1V @ 250μA | 1.5A Ta | 1.3nC @ 4.5V | 1.8V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||||
| BSS87H6327FTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-bss87h6327ftsa1-datasheets-2744.pdf | TO-243AA | 4.5mm | 1.5mm | 2.5mm | Lead Free | 4 | 8 Weeks | No SVHC | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | FLAT | 4 | 1 | Single | 1W | 1 | R-PDSO-F4 | 3.7 ns | 3.5ns | 27.3 ns | 17.6 ns | 290mA | 20V | 240V | 240V | SILICON | DRAIN | 1.5V | 1W Ta | 0.26A | 6Ohm | 240V | N-Channel | 97pF @ 25V | 1.5 V | 6 Ω @ 260mA, 10V | 1.8V @ 108μA | 260mA Ta | 5.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| CSD13380F3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 690μm | 600μm | 3 | 6 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 345μm | YES | BOTTOM | CSD13380 | Single | 1 | SILICON | SWITCHING | 12V | 12V | 500mW Ta | 2.1A | 0.092Ohm | 12.5 pF | N-Channel | 156pF @ 6V | 76m Ω @ 400mA, 4.5V | 1.3V @ 250μA | 3.6A Ta | 1.2nC @ 4.5V | 1.8V 4.5V | 8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP6185SE-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp6185se13-datasheets-2803.pdf | TO-261-4, TO-261AA | 4 | 22 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G4 | 3A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.2W Ta | 3A | 0.15Ohm | P-Channel | 708pF @ 30V | 150m Ω @ 2.2A, 10V | 3V @ 250μA | 3A Ta | 14nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD23280F3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-SMD, No Lead | 690μm | 600μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 345μm | BOTTOM | CSD23280 | Single | 1 | 1.8A | SILICON | DRAIN | SWITCHING | 12V | 12V | -650mV | 500mW Ta | 11.4A | 0.25Ohm | 11.1 pF | P-Channel | 234pF @ 6V | 116m Ω @ 400mA, 4.5V | 0.95V @ 250μA | 1.8A Ta | 1.23nC @ 4.5V | 1.5V 4.5V | -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9M85-60EX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-buk9m8560ex-datasheets-2583.pdf | SOT-1210, 8-LFPAK33 | 4 | 26 Weeks | AEC-Q101; IEC-60134 | SINGLE | GULL WING | 8 | 1 | R-PSSO-G4 | 12.8A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 31W Tc | 51A | 0.085Ohm | 4.55 mJ | N-Channel | 434pF @ 25V | 73m Ω @ 5A, 10V | 2.1V @ 1mA | 12.8A Tc | 4.4nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RTR025N03TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | 30V | 2.5A | SC-96 | Lead Free | 3 | No SVHC | 133MOhm | 3 | yes | EAR99 | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 9 ns | 15ns | 10 ns | 25 ns | 2.5A | 12V | 30V | SILICON | SWITCHING | 1.5V | 1W Ta | 30V | N-Channel | 220pF @ 10V | 1.5 V | 92m Ω @ 2.5A, 4.5V | 1.5V @ 1mA | 2.5A Ta | 4.6nC @ 4.5V | 2.5V 4.5V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4403DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si4403ddyt1ge3-datasheets-2587.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | EAR99 | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G8 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 5W Tc | 15.4A | 0.014Ohm | P-Channel | 3250pF @ 10V | 14m Ω @ 9A, 4.5V | 1V @ 250μA | 15.4A Tc | 99nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVP3310FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvp3310fta-datasheets-2636.pdf | -100V | -75mA | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 20Ohm | 3 | yes | EAR99 | No | 75mA | e3 | Matte Tin (Sn) | 100V | DUAL | GULL WING | 3 | 1 | Single | 330mW | 1 | 8 ns | 8ns | 8 ns | 8 ns | 75mA | 20V | SILICON | SWITCHING | 330mW Ta | 5 pF | -100V | P-Channel | 50pF @ 25V | 20 Ω @ 150mA, 10V | 3.5V @ 1mA | 75mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD17484F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd17484f4t-datasheets-2338.pdf | 3-XFDFN | 1.035mm | 635μm | Lead Free | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 200μm | BOTTOM | NO LEAD | CSD17484 | 3 | Single | 1 | 3 ns | 1ns | 4 ns | 11 ns | 3A | 12V | SILICON | SWITCHING | 30V | 500mW Ta | 3A | 0.27Ohm | 2.9 pF | N-Channel | 195pF @ 15V | 121m Ω @ 500mA, 8V | 1.1V @ 250μA | 3A Ta | 0.2nC @ 8V | 1.8V 8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD25481F4T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FemtoFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 3-XFDFN | 1.035mm | 350μm | 635μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | ULTRA LOW RESISTANCE | BOTTOM | NO LEAD | 260 | CSD25481 | 1 | Single | NOT SPECIFIED | 500mW | 1 | 4.1 ns | 3.6ns | 6.7 ns | 16.9 ns | 2.5A | 12V | SILICON | SWITCHING | 20V | -950mV | 500mW Ta | -20V | P-Channel | 189pF @ 10V | 88m Ω @ 500mA, 8V | 1.2V @ 250μA | 2.5A Ta | 0.91nC @ 4.5V | 1.8V 4.5V | -12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2333CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2333cdst1e3-datasheets-6790.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 35mOhm | 3 | yes | EAR99 | Tin | No | 71A | e3 | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 150°C | 13 ns | 35ns | 35 ns | 45 ns | -5.1A | 8V | SILICON | SWITCHING | -400mV | 1.25W Ta 2.5W Tc | -12V | P-Channel | 1225pF @ 6V | -1 V | 35m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.1A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SI2366DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2366dst1ge3-datasheets-2125.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.25W | 1 | FET General Purpose Power | 5 ns | 12ns | 8 ns | 14 ns | 5.8A | 20V | SILICON | SWITCHING | 30V | 1.2V | 1.25W Ta 2.1W Tc | N-Channel | 335pF @ 15V | 1.2 V | 36m Ω @ 4.5A, 10V | 2.5V @ 250μA | 5.8A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BUK9Y43-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/nexperiausainc-buk9y4360e115-datasheets-2662.pdf | SC-100, SOT-669 | 12 Weeks | 4 | 1 | LFPAK56, Power-SO8 | 880pF | 6.3 ns | 12.3ns | 10.6 ns | 10.1 ns | 22A | 10V | 60V | 60V | 45W Tc | 35.8mOhm | 60V | N-Channel | 880pF @ 25V | 41mOhm @ 5A, 10V | 2.1V @ 1mA | 22A Tc | 8.2nC @ 5V | 41 mΩ | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC604P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc604p-datasheets-2431.pdf | -20V | -5.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1.1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 33MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 1 | Single | 1.6W | 1 | Other Transistors | 150°C | 13 ns | 11ns | 11 ns | 90 ns | -5.5A | 8V | SILICON | SWITCHING | 20V | -700mV | 1.6W Ta | -20V | P-Channel | 1926pF @ 10V | -700 mV | 33m Ω @ 5.5A, 4.5V | 1.5V @ 250μA | 5.5A Ta | 30nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| SI3127DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3127dvt1ge3-datasheets-2508.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 30 | 1 | R-PDSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2W Ta 4.2W Tc | MO-193AA | 5.1A | 0.089Ohm | P-Channel | 833pF @ 20V | 89m Ω @ 1.5A, 4.5V | 3V @ 250μA | 3.5A Ta 13A Tc | 30nC @ 10V | 4.5V 10V | ±20V |
