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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM3J377R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 20V | 1W Ta | P-Channel | 290pF @ 10V | 93m Ω @ 1.5A, 4.5V | 1V @ 1mA | 3.9A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | +6V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV48XPA2R | Nexperia USA Inc. | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmv48xpa2r-datasheets-2628.pdf | TO-236-3, SC-59, SOT-23-3 | 20V | 610mW Ta 8.3W Tc | P-Channel | 679pF @ 10V | 49m Ω @ 4A, 8V | 1.3V @ 250μA | 4A Ta | 10nC @ 4.5V | 2.5V 8V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG24N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg24n65efge3-datasheets-2629.pdf | TO-247-3 | 21 Weeks | TO-247AC | 650V | 250W Tc | N-Channel | 2774pF @ 100V | 156mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2078LCA3-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2078lca37-datasheets-2608.pdf | 3-XFDFN | 24 Weeks | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 20V | 810mW Ta | P-Channel | 228pF @ 10V | 78m Ω @ 500mA, 8V | 1.2V @ 250μA | 3.4A Ta | 1.6nC @ 4.5V | 1.8V 8V | -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SN7002NH6433XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-sn7002nh6327xtsa2-datasheets-5536.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 10 Weeks | 3 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 2.4 ns | 3.2ns | 3.6 ns | 5.3 ns | 200mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | 60V | 360mW Ta | 0.2A | 5Ohm | 4.2 pF | N-Channel | 45pF @ 25V | 5 Ω @ 500mA, 10V | 1.8V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| AUIRF2804S | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-auirf2804s-datasheets-2439.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 16 Weeks | EAR99 | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 300W Tc | 270A | 1080A | 0.0023Ohm | 540 mJ | N-Channel | 6450pF @ 25V | 2m Ω @ 75A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHG70N60AEF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | EF | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg70n60aefge3-datasheets-2450.pdf | TO-247-3 | 24.99mm | 21 Weeks | EAR99 | NOT SPECIFIED | 1 | NOT SPECIFIED | 417W | 150°C | 45 ns | 219 ns | 60A | 20V | 417W Tc | 600V | N-Channel | 5348pF @ 100V | 41m Ω @ 35A, 10V | 4V @ 250μA | 60A Tc | 410nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3420A-TP | Micro Commercial Components (MCC) |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/microcommercialco-si3420atp-datasheets-1070.pdf | TO-236-3, SC-59, SOT-23-3 | 22 Weeks | 260 | 10 | 20V | 1.25W | N-Channel | 515pF @ 10V | 28m Ω @ 5A, 4.5V | 1V @ 250μA | 6A | 12nC @ 10V | 2.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMH1200UPEH | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmh1200upeh-datasheets-2434.pdf | 3-XFDFN | 8 Weeks | 30V | 380mW Ta 2.8W Tc | P-Channel | 33pF @ 15V | 1.6 Ω @ 410mA, 4.5V | 0.95V @ 250μA | 520mA | 1nC @ 5V | 1.5V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMH550UNEH | Nexperia USA Inc. | $0.32 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmh550uneh-datasheets-2459.pdf | 3-XFDFN | 8 Weeks | 30V | 380mW Ta 2.8W Tc | N-Channel | 30.3pF @ 15V | 670m Ω @ 770mA, 4.5V | 0.95V @ 250μA | 770mA Ta | 0.4nC @ 4V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP20NM60FD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 600V | 20A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP20N | 3 | Single | 192W | 1 | FET General Purpose Power | 25 ns | 12ns | 22 ns | 20A | 30V | SILICON | SWITCHING | 4V | 192W Tc | TO-220AB | 80A | 0.29Ohm | 700 mJ | 600V | N-Channel | 1300pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 37nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STW24NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw24nm60n-datasheets-2470.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STW24N | 3 | Single | 125W | 1 | 11.5 ns | 16.5ns | 37 ns | 73 ns | 17A | 30V | SILICON | SWITCHING | 3V | 125W Tc | 68A | 600V | N-Channel | 1400pF @ 50V | 190m Ω @ 8A, 10V | 4V @ 250μA | 17A Tc | 46nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STWA88N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw88n65m5-datasheets-2088.pdf | TO-247-3 | Lead Free | 17 Weeks | EAR99 | No | STWA88 | Single | 450W | FET General Purpose Powers | 16ns | 29 ns | 84A | 25V | 450W Tc | 650V | N-Channel | 8825pF @ 100V | 29m Ω @ 42A, 10V | 5V @ 250μA | 84A Tc | 204nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XP264N0301TR-G | Torex Semiconductor Ltd | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/torexsemiconductorltd-xp264n0301trg-datasheets-2425.pdf | TO-236-3, SC-59, SOT-23-3 | 10 Weeks | 60V | 400mW Ta | N-Channel | 30pF @ 20V | 1.6 Ω @ 100mA, 10V | 2.1V @ 250μA | 300mA Ta | 720pC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK100E08N1,S1X | Toshiba Semiconductor and Storage | $2.33 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-220-3 | 9nF | 12 Weeks | 100A | 80V | 255W Tc | N-Channel | 9000pF @ 40V | 3.2m Ω @ 50A, 10V | 4V @ 1mA | 100A Ta | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW25N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp25n80k5-datasheets-2009.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 17 Weeks | 260MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW25N | Single | 1 | FET General Purpose Power | 25 ns | 60 ns | 19.5A | 30V | SILICON | SWITCHING | 250W Tc | 78A | 200 mJ | 800V | N-Channel | 1600pF @ 100V | 260m Ω @ 19.5A, 10V | 5V @ 100μA | 19.5A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STW28N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stb28n60dm2-datasheets-9562.pdf | TO-247-3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STW28N | 21A | 600V | 4V | 170W Tc | N-Channel | 1500pF @ 100V | 160m Ω @ 10.5A, 10V | 5V @ 250μA | 21A Tc | 34nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J36TU,LF | Toshiba Semiconductor and Storage | $0.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 3-SMD, Flat Lead | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 800mW Ta | P-Channel | 43pF @ 10V | 1.31 Ω @ 100mA, 4.5V | 1V @ 1mA | 330mA Ta | 1.2nC @ 4V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSS7728NH6327XTSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-bss7728nh6327xtsa2-datasheets-2509.pdf | 60V | 200mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 10 Weeks | 3 | yes | EAR99 | Tin | No | e3 | Halogen Free | DUAL | GULL WING | 360mW | 1 | 2.7ns | 200mA | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | 360mW Ta | 0.2A | 5Ohm | 4.4 pF | N-Channel | 56pF @ 25V | 5 Ω @ 500mA, 10V | 2.3V @ 26μA | 200mA Ta | 1.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SIHP24N65E-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sihp24n65ege3-datasheets-6695.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 19 Weeks | 6.000006g | Unknown | 145mOhm | 3 | No | 1 | Single | 250W | 1 | TO-220AB | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STW52NK25Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw52nk25z-datasheets-2515.pdf | 250V | 52A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | No SVHC | 45mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW52N | 3 | Single | 300W | 1 | FET General Purpose Power | 40 ns | 75ns | 55 ns | 115 ns | 26A | 30V | SILICON | SWITCHING | 3.75V | 300W Tc | 208A | 500 mJ | 250V | N-Channel | 4850pF @ 25V | 45m Ω @ 26A, 10V | 4.5V @ 150μA | 52A Tc | 160nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp33n60efge3-datasheets-2335.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 4V | 278W Tc | TO-220AB | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| R6076MNZ1C9 | ROHM Semiconductor | $34.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 740W Tc | 76A | 228A | 0.055Ohm | 68.7 mJ | N-Channel | 7000pF @ 25V | 55m Ω @ 38A, 10V | 5V @ 1mA | 76A Tc | 115nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GA10JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263 | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 25A | N-CHANNEL | 1200V | 170W Tc | 1403pF @ 800V | 120m Ω @ 10A | 25A Tc | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA75N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60dm6-datasheets-2321.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA75 | NOT SPECIFIED | 600V | N-Channel | 72A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG61N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg61n65efge3-datasheets-2352.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 520W Tc | TO-247AC | 64A | 199A | 0.047Ohm | 1142 mJ | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB190CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb190cic0g-datasheets-2081.pdf | TO-220-3 | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 33.8W Tc | TO-220AB | 18A | 54A | 0.19Ohm | 212.9 mJ | N-Channel | 1273pF @ 100V | 190m Ω @ 6A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002/HAMR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-2n7002215-datasheets-5742.pdf | TO-236-3, SC-59, SOT-23-3 | 4 Weeks | 60V | 830mW Tc | N-Channel | 50pF @ 10V | 5 Ω @ 500mA, 10V | 2.5V @ 250μA | 300mA Tc | 4.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW45NM50 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw45nm50-datasheets-2365.pdf | 500V | 45A | TO-247-3 | 15.75mm | 24.45mm | 5.15mm | Lead Free | 3 | 16 Weeks | 9.071847g | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | STW45N | 3 | 1 | Single | NOT SPECIFIED | 417W | 1 | FET General Purpose Power | Not Qualified | 150°C | 29.1 ns | 107.5ns | 87.7 ns | 21.6 ns | 45A | 30V | SILICON | SWITCHING | 4V | 417W Tc | TO-247AC | 500V | N-Channel | 3700pF @ 25V | 100m Ω @ 22.5A, 10V | 5V @ 250μA | 45A Tc | 117nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| STW70N60DM6-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw70n60dm64-datasheets-2374.pdf | TO-247-4 | 12 Weeks | 600V | 390W Tc | N-Channel | 4360pF @ 100V | 42m Ω @ 31A, 10V | 4.75V @ 250μA | 62A Tc | 99nC @ 10V | 10V | ±25V |
