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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SSM3J15F,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 30V | 200mW Ta | P-Channel | 9.1pF @ 3V | 12 Ω @ 10mA, 4V | 1.7V @ 100μA | 100mA Ta | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPZA60R037P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipza60r037p7xksa1-datasheets-2331.pdf | TO-247-4 | 4 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T4 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 255W Tc | 280A | 0.037Ohm | 295 mJ | N-Channel | 5243pF @ 400V | 37m Ω @ 29.5A, 10V | 4V @ 1.48mA | 76A Tc | 121nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHP33N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihp33n60efge3-datasheets-2335.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | Unknown | 3 | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | 28 ns | 43ns | 48 ns | 161 ns | 33A | 20V | SILICON | SWITCHING | 600V | 600V | 4V | 278W Tc | TO-220AB | 0.098Ohm | N-Channel | 3454pF @ 100V | 98m Ω @ 16.5A, 10V | 4V @ 250μA | 33A Tc | 155nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| R6076MNZ1C9 | ROHM Semiconductor | $34.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | TO-247-3 | 3 | 16 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 740W Tc | 76A | 228A | 0.055Ohm | 68.7 mJ | N-Channel | 7000pF @ 25V | 55m Ω @ 38A, 10V | 5V @ 1mA | 76A Tc | 115nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| GA10JT12-263 | GeneSiC Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 175°C TJ | Tube | 1 (Unlimited) | SiC (Silicon Carbide Junction Transistor) | RoHS Compliant | 2014 | TO-263 | 18 Weeks | No SVHC | 3 | EAR99 | Other Transistors | 25A | N-CHANNEL | 1200V | 170W Tc | 1403pF @ 800V | 120m Ω @ 10A | 25A Tc | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STWA75N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60dm6-datasheets-2321.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STWA75 | NOT SPECIFIED | 600V | N-Channel | 72A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG61N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg61n65efge3-datasheets-2352.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 520W Tc | TO-247AC | 64A | 199A | 0.047Ohm | 1142 mJ | N-Channel | 7407pF @ 100V | 47m Ω @ 30.5A, 10V | 4V @ 250μA | 64A Tc | 371nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB190CZ C0G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb190cic0g-datasheets-2081.pdf | TO-220-3 | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 33.8W Tc | TO-220AB | 18A | 54A | 0.19Ohm | 212.9 mJ | N-Channel | 1273pF @ 100V | 190m Ω @ 6A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SI2334DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2334dst1ge3-datasheets-1710.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 30 | 1.3W | 1 | FET General Purpose Powers | 10ns | 8 ns | 4.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 400mV | 1.3W Ta 1.7W Tc | 0.044Ohm | N-Channel | 634pF @ 15V | 400 mV | 44m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.9A Tc | 10nC @ 4.5V | 2.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| SIHG35N60E-GE3 | Vishay Siliconix | $5.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg35n60ege3-datasheets-2303.pdf | TO-247-3 | 18 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG44N65EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg44n65efge3-datasheets-2307.pdf | TO-247-3 | 3 | 21 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 46A | 154A | 0.073Ohm | 596 mJ | N-Channel | 5892pF @ 100V | 73m Ω @ 22A, 10V | 4V @ 250μA | 46A Tc | 278nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STWA12N120K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw12n120k5-datasheets-1855.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STWA12 | NOT SPECIFIED | 12A | 1200V | 250W Tc | N-Channel | 1370pF @ 100V | 690m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 44.2nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1204R7BFLLG | Microsemi |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | POWER MOS 7® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 1997 | /files/microsemicorporation-aptrg8a120g-datasheets-4026.pdf | 1.2kV | 3.5A | TO-247-3 | 25.96mm | Lead Free | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | SINGLE | 3 | 1 | 135W | 1 | 150°C | R-PSFM-T3 | 7 ns | 2ns | 24 ns | 20 ns | 3.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1200V | 135W Tc | TO-247AD | 425 mJ | 1.2kV | N-Channel | 715pF @ 25V | 4.7 Ω @ 1.75A, 10V | 5V @ 1mA | 3.5A Tc | 31nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| SIHG73N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihg73n60aege3-datasheets-2318.pdf | TO-247-3 | 25.11mm | 14 Weeks | 1 | 417W | 150°C | 43 ns | 212 ns | 60A | 30V | 417W Tc | 600V | N-Channel | 5500pF @ 100V | 40m Ω @ 36.5A, 10V | 4V @ 250μA | 60A Tc | 394nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW75N60DM6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM6 | Through Hole | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw75n60dm6-datasheets-2321.pdf | TO-247-3 | 16 Weeks | compliant | NOT SPECIFIED | STW75N | NOT SPECIFIED | 600V | N-Channel | 72A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW48N60M2-4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stw48n60m24-datasheets-2246.pdf | TO-247-4 | 26 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW48N | NOT SPECIFIED | FET General Purpose Power | 42A | Single | 600V | 300W Tc | N-Channel | 3060pF @ 100V | 70m Ω @ 21A, 10V | 4V @ 250μA | 42A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP38N60E-GE3 | Vishay Siliconix | $10.80 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp38n60ege3-datasheets-2323.pdf | TO-220-3 | 14 Weeks | 600V | 313W Tc | N-Channel | 3600pF @ 100V | 65m Ω @ 19A, 10V | 4V @ 250μA | 43A Tc | 183nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPW65R070C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r070c6fksa1-datasheets-2250.pdf | TO-247-3 | Lead Free | 3 | 3 | yes | EAR99 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | 17 ns | 6 ns | 90 ns | 53.5A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 391W Tc | 0.07Ohm | N-Channel | 3900pF @ 100V | 70m Ω @ 17.6A, 10V | 3.5V @ 1.76mA | 53.5A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| TPH3206PD | Transphorm |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | GaNFET (Gallium Nitride) | RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/transphorm-tph3206pd-datasheets-2255.pdf | TO-220-3 | 10 Weeks | yes | unknown | NOT SPECIFIED | NOT SPECIFIED | 600V | 96W Tc | N-Channel | 760pF @ 480V | 180m Ω @ 11A, 8V | 2.6V @ 500μA | 17A Tc | 9.3nC @ 4.5V | 10V | ±18V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP36N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fcp36n60n-datasheets-2261.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 2.421g | No SVHC | 90MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 312W | 1 | FET General Purpose Power | 23 ns | 22ns | 4 ns | 94 ns | 36A | 30V | SILICON | SWITCHING | 2V | 312W Tc | TO-220AB | 600V | N-Channel | 4785pF @ 100V | 90m Ω @ 18A, 10V | 4V @ 250μA | 36A Tc | 112nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| IPW65R099C6FKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipw65r099c6fksa1-datasheets-2270.pdf | TO-247-3 | Lead Free | 3 | 12 Weeks | yes | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 278W | 1 | R-PSFM-T3 | 10.6 ns | 9ns | 6 ns | 77 ns | 38A | 20V | 650V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 278W Tc | 0.099Ohm | 845 mJ | N-Channel | 2780pF @ 100V | 99m Ω @ 12.8A, 10V | 3.5V @ 1.2mA | 38A Tc | 127nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| R6076ENZ1C9 | ROHM Semiconductor | $61.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohm-r6076enz1c9-datasheets-9713.pdf | TO-247-3 | 3 | 10 Weeks | No SVHC | 3 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | 76A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 4V | 120W Tc | 228A | 0.042Ohm | 1954 mJ | N-Channel | 6500pF @ 25V | 42m Ω @ 44.4A, 10V | 4V @ 1mA | 76A Tc | 260nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIHW47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60ege3-datasheets-2291.pdf | TO-3P-3 Full Pack | Lead Free | 3 | 19 Weeks | 38.000013g | Unknown | 64mOhm | 3 | yes | No | 1 | Single | 357W | 1 | FET General Purpose Powers | 50 ns | 25ns | 26 ns | 140 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 2.5V | 357W Tc | TO-247AD | N-Channel | 9620pF @ 100V | 64m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| C3M0120100J | Cree/Wolfspeed | $12.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | C3M™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SiCFET (Silicon Carbide) | RoHS Compliant | 2017 | TO-263-8, D2Pak (7 Leads + Tab), TO-263CA | 16 Weeks | D2PAK-7 | 1000V | 83W Tc | 120mOhm | N-Channel | 350pF @ 600V | 155mOhm @ 15A, 15V | 3.5V @ 3mA | 22A Tc | 21.5nC @ 15V | 15V | +15V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb35n60ege3-datasheets-2298.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 650V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n65ege3-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFP4137PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfp4137pbf-datasheets-2197.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | No SVHC | 69MOhm | 3 | EAR99 | No | Single | 341W | 1 | FET General Purpose Power | 18 ns | 23ns | 20 ns | 34 ns | 38A | 20V | 3V | 341W Tc | 300V | N-Channel | 5168pF @ 50V | 69m Ω @ 24A, 10V | 5V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| SIHS36N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihs36n50de3-datasheets-2207.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.3mm | 3 | 8 Weeks | 38.000013g | Unknown | 247 | No | 1 | Single | 446W | 1 | R-PSIP-T3 | 33 ns | 89ns | 68 ns | 79 ns | 36A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 446W Tc | TO-274AA | 332 mJ | N-Channel | 3233pF @ 100V | 130m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STP42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 79mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP42N | 3 | Single | 190W | 1 | FET General Purpose Power | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||
| SIHG47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60efge3-datasheets-2218.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 30 ns | 56ns | 56 ns | 91 ns | 47A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 4V | 379W Tc | TO-247AC | 0.065Ohm | N-Channel | 4854pF @ 100V | 67m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V |
