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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Output Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPA028N08N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa028n08n3gxksa1-datasheets-2172.pdf | TO-220-3 Full Pack | 3 | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 80V | 80V | 42W Tc | TO-220AB | 89A | 352A | 0.0028Ohm | 1430 mJ | N-Channel | 14200pF @ 40V | 2.8m Ω @ 89A, 10V | 3.5V @ 270μA | 89A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6020ANX | ROHM Semiconductor | $1.04 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6020anx-datasheets-2178.pdf | TO-220-3 Full Pack | 3 | 13 Weeks | 3 | yes | FAST SWITCHING | No | SINGLE | 260 | 3 | 10 | 50W | 1 | FET General Purpose Power | 40 ns | 60ns | 70 ns | 230 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 50W Tc | TO-220AB | 80A | 0.22Ohm | 26.7 mJ | 600V | N-Channel | 2040pF @ 25V | 220m Ω @ 10A, 10V | 4.5V @ 1mA | 20A Ta | 65nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP20NM50FD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 500V | 20A | TO-220-3 | Lead Free | 3 | 16 Weeks | 250mOhm | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP20N | 3 | Single | 192W | 1 | FET General Purpose Power | R-PSFM-T3 | 22 ns | 20ns | 15 ns | 20A | 30V | SILICON | SWITCHING | 192W Tc | TO-220AB | 80A | 700 mJ | 500V | N-Channel | 1380pF @ 25V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STW20NM50FD | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 500V | 20A | TO-247-3 | 38.1mm | 6.35mm | 19.05mm | Lead Free | 3 | 16 Weeks | 9.071847g | No SVHC | 250mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW20N | 3 | Single | 214W | 1 | FET General Purpose Power | 22 ns | 20ns | 15 ns | 20A | 30V | SILICON | SWITCHING | 4V | 214W Tc | 80A | 700 mJ | 500V | N-Channel | 1380pF @ 25V | 250m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 53nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| SIHG47N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n65ege3-datasheets-2191.pdf | TO-247-3 | Lead Free | 3 | 14 Weeks | 38.000013g | 3 | No | 1 | Single | 417W | 1 | 47 ns | 87ns | 103 ns | 156 ns | 47A | 20V | SILICON | SWITCHING | 650V | 650V | 417W Tc | TO-247AC | 0.072Ohm | N-Channel | 5682pF @ 100V | 72m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 273nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4137PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-irfp4137pbf-datasheets-2197.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | No SVHC | 69MOhm | 3 | EAR99 | No | Single | 341W | 1 | FET General Purpose Power | 18 ns | 23ns | 20 ns | 34 ns | 38A | 20V | 3V | 341W Tc | 300V | N-Channel | 5168pF @ 50V | 69m Ω @ 24A, 10V | 5V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SIHS36N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihs36n50de3-datasheets-2207.pdf | TO-247-3 | 16.1mm | 20.8mm | 5.3mm | 3 | 8 Weeks | 38.000013g | Unknown | 247 | No | 1 | Single | 446W | 1 | R-PSIP-T3 | 33 ns | 89ns | 68 ns | 79 ns | 36A | 30V | SILICON | SWITCHING | 500V | 500V | 3V | 446W Tc | TO-274AA | 332 mJ | N-Channel | 3233pF @ 100V | 130m Ω @ 18A, 10V | 5V @ 250μA | 36A Tc | 125nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STP42N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb42n65m5-datasheets-5509.pdf | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 17 Weeks | No SVHC | 79mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Tin (Sn) | STP42N | 3 | Single | 190W | 1 | FET General Purpose Power | 61 ns | 24ns | 13 ns | 65 ns | 33A | 25V | SILICON | SWITCHING | 4V | 190W Tc | TO-220AB | 950 mJ | 650V | N-Channel | 4650pF @ 100V | 79m Ω @ 16.5A, 10V | 5V @ 250μA | 33A Tc | 100nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||
| SIHG47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60efge3-datasheets-2218.pdf | TO-247-3 | Lead Free | 3 | 22 Weeks | 38.000013g | Unknown | 3 | No | 1 | Single | 1 | 30 ns | 56ns | 56 ns | 91 ns | 47A | 30V | SILICON | DRAIN | SWITCHING | 600V | 600V | 4V | 379W Tc | TO-247AC | 0.065Ohm | N-Channel | 4854pF @ 100V | 67m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| STWA48N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/stmicroelectronics-stwa48n60dm2-datasheets-2225.pdf | TO-247-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STWA48 | 600V | 300W Tc | N-Channel | 3250pF @ 100V | 79m Ω @ 20A, 10V | 5V @ 250μA | 40A Tc | 70nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN52XPX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmn52xpx-datasheets-1409.pdf | SC-74, SOT-457 | 6 | 4 Weeks | IEC-60134 | DUAL | GULL WING | 6 | 1 | R-PDSO-G6 | 3.7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 530mW Ta 4.46W Tc | 0.062Ohm | P-Channel | 763pF @ 10V | 62m Ω @ 3.7A, 4.5V | 900mV @ 250μA | 3.7A Ta | 12nC @ 4.5V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6J412TU,LF | Toshiba Semiconductor and Storage | $0.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 6-SMD, Flat Leads | 12 Weeks | NOT SPECIFIED | NOT SPECIFIED | 20V | 1W Ta | P-Channel | 840pF @ 10V | 42.7m Ω @ 3A, 4.5V | 1V @ 1mA | 4A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUG90090E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sug90090ege3-datasheets-2051.pdf | TO-247-3 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 395W Tc | N-Channel | 5220pF @ 100V | 9.5m Ω @ 20A, 10V | 4V @ 250μA | 100A Tc | 129nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB24N65E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb24n65ege3-datasheets-2054.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | Unknown | 145mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | D2PAK | 2.74nF | 24 ns | 84ns | 69 ns | 70 ns | 24A | 20V | 650V | 2V | 250W Tc | 145mOhm | 650V | N-Channel | 2740pF @ 100V | 145mOhm @ 12A, 10V | 4V @ 250μA | 24A Tc | 122nC @ 10V | 145 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHB21N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihb21n60efge3-datasheets-2058.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 21A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 227W Tc | 53A | 0.176Ohm | 367 mJ | N-Channel | 2030pF @ 100V | 176m Ω @ 11A, 10V | 4V @ 250μA | 21A Tc | 84nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihf35n60ege3-datasheets-2063.pdf | TO-220-3 Full Pack | 18 Weeks | 600V | 39W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP35N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sihp35n60ege3-datasheets-2067.pdf | TO-220-3 | 14 Weeks | 600V | 250W Tc | N-Channel | 2760pF @ 100V | 94m Ω @ 17A, 10V | 4V @ 250μA | 32A Tc | 132nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6025FNZ1C9 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | TO-247-3 | 3 | 17 Weeks | not_compliant | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 150W Tc | 100A | 0.18Ohm | 42.1 mJ | N-Channel | 3500pF @ 25V | 180m Ω @ 12.5A, 10V | 5V @ 1mA | 25A Tc | 85nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM60NB190CI C0G | Taiwan Semiconductor Corporation | $7.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm60nb190cic0g-datasheets-2081.pdf | TO-220-3 Full Pack, Isolated Tab | 3 | 24 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 33.8W Tc | TO-220AB | 18A | 54A | 0.19Ohm | 212.9 mJ | N-Channel | 1273pF @ 100V | 190m Ω @ 6A, 10V | 4V @ 250μA | 18A Tc | 31nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4127PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfp4127pbf-datasheets-2084.pdf | TO-247-3 | Lead Free | 12 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 75A | 200V | 341W Tc | N-Channel | 5380pF @ 50V | 21m Ω @ 44A, 10V | 5V @ 250μA | 75A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG23N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TA | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg23n60ege3-datasheets-2090.pdf | TO-247-3 | 3 | 14 Weeks | 38.000013g | 158mOhm | NO | 1 | 1 | R-PSFM-T3 | 23A | SILICON | DRAIN | SWITCHING | 600V | 600V | 227W Tc | TO-247AC | 63A | 353 mJ | N-Channel | 2418pF @ 100V | 158m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 95nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BTS282ZE3230AKSA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TEMPFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -40°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bts282ze3230aksa2-datasheets-2094.pdf | 49V | 1.7A | TO-220-7 | Contains Lead | 18 Weeks | 7 | Tin | Halogen Free | 1 | 300W | 1 | PG-TO220-7-12 | 4.8nF | 40V | 37ns | 80A | 20V | 49V | 49V | 300W Tc | 5.8mOhm | N-Channel | 4800pF @ 25V | 6.5mOhm @ 36A, 10V | 2V @ 240μA | 80A Tc | 232nC @ 10V | Temperature Sensing Diode | 6.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STP20NM60FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp20nm60-datasheets-1689.pdf | 650V | 20A | TO-220-3 Full Pack | 10.4mm | 9.3mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 290mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | 245 | STP20N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 25 ns | 20ns | 11 ns | 42 ns | 20A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 45W Tc | TO-220AB | 80A | 650 mJ | 600V | N-Channel | 1500pF @ 25V | 290m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 54nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| STF28NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf28nm50n-datasheets-2104.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 158MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF28 | 3 | Single | 35W | 1 | FET General Purpose Power | 13.6 ns | 19ns | 52 ns | 62 ns | 21A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 35W Tc | TO-220AB | 84A | 500V | N-Channel | 1735pF @ 25V | 158m Ω @ 10.5A, 10V | 4V @ 250μA | 21A Tc | 50nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||
| NVTFS4823NWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs4823nwftag-datasheets-1821.pdf | Lead Free | 23 Weeks | 8 | ACTIVE, NOT REC (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | 3.1W | 8 | 1 | Single | FET General Purpose Power | 750pF | 12 ns | 22ns | 4 ns | 14 ns | 30A | 20V | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 8.1mOhm | 30V | 10.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J35CTC,L3F | Toshiba Semiconductor and Storage | $0.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | SOT-1123 | 12 Weeks | unknown | 250mA | 20V | 500mW Ta | P-Channel | 42pF @ 10V | 1.4 Ω @ 150mA, 4.5V | 1V @ 100μA | 250mA Ta | 1.2V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP17N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp17n80ege3-datasheets-2044.pdf | TO-220-3 | 14 Weeks | 800V | 208W Tc | N-Channel | 2408pF @ 100V | 290m Ω @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF23NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw23nm50n-datasheets-1950.pdf | TO-220-3 Full Pack | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 190MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF23 | 3 | Single | 30W | 1 | FET General Purpose Power | 6.6 ns | 19ns | 29 ns | 71 ns | 17A | 25V | SILICON | ISOLATED | SWITCHING | 3V | 30W Tc | TO-220AB | 68A | 254 mJ | 500V | N-Channel | 1330pF @ 50V | 190m Ω @ 8.5A, 10V | 4V @ 250μA | 17A Tc | 45nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SIHG25N60EFL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg25n60eflge3-datasheets-1972.pdf | TO-247-3 | 21 Weeks | 600V | 250W Tc | N-Channel | 2274pF @ 100V | 146m Ω @ 12.5A, 10V | 5V @ 250μA | 25A Tc | 75nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihp30n60ee3-datasheets-9594.pdf | TO-220-3 | 10.51mm | 15.49mm | 4.65mm | Lead Free | 14 Weeks | 6.000006g | Unknown | 125mOhm | 3 | Tin | No | 1 | Single | 250W | 1 | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V |
